Abstract
The invention relates to a semiconductor module (1) comprising at least two semiconductor components (10, 20) which are arranged within a housing in each case between two electrical conduction elements (12, 14, 22, 24) and are electrically conductively connected to the electrical conduction elements (12, 14, 22, 24). In this case, the electrical conduction elements (12, 14, 22, 24) respectively have a contact extension (12.1, 14.2, 22.1, 24.1) that is led out of the housing, wherein two contact extensions (12.1, 24.1) arranged in different planes are connected to one another outside the housing via a contact element (5), which forms a current path between the two contact extensions (12.1, 24.1) outside the housing.
Claims
1. A semiconductor module (1) comprising at least two semiconductor components (10, 20) which are arranged within a housing (3) in each case between two electrical conduction elements (12, 14, 22, 24) and are electrically conductively connected to the electrical conduction elements (12, 14, 22, 24), characterized in that each of the electrical conduction elements (12, 14, 22, 24) has a respective contact extension (12.1, 14.2, 22.1, 24.1) that is led out of the housing (3), wherein two of the contact extensions (12.1, 24.1) arranged in different planes are connected to one another outside the housing (3) via a contact element (5), which forms a current path between the two contact extensions (12.1, 24.1) outside the housing (3).
2. The semiconductor module (1) as claimed in claim 1, characterized in that the contact element (5) is connected to the two of the contact extensions (12.1, 24.1) by soldering, resistance or laser welding, insulation-displacement connection, crimping or press-fit connection.
3. The semiconductor module (1) as claimed in claim 1, characterized in that the at least two semiconductor components (10, 20) are embodied as power semiconductor components which have the same area requirement and form a half-bridge circuit for an electrical machine.
4. The semiconductor module (1) as claimed in claim 1, characterized in that a first one of the electrical conduction elements (12) of the first semiconductor (10) and a first one of the electrical conduction elements (22) of the second semiconductor (20) are formed in each case as a drain terminal (12A, 22A) or a collector terminal, and a second one of the electrical conduction elements (14) of the first semiconductor (10) and a second one of the electrical conduction elements (24) of the second semiconductor (20) are formed in each case as a source terminal (14A, 24A) or an emitter terminal.
5. The semiconductor module (1) as claimed in claim 4, characterized in that the two drain terminals (12A, 22A) or collector terminals are arranged with parallel and aligned edges in a common first plane.
6. The semiconductor module (1) as claimed in claim 4, characterized in that the two source terminals (14A, 24A) or emitter terminals are arranged with parallel and aligned edges in a common second plane.
7. The semiconductor module (1) as claimed in claim 4, characterized in that within the housing (3) a first drain terminal (12A) or collector terminal is connected via a contacting layer (7) to a corresponding drain electrode or collector electrode of the first semiconductor component (10) and a first source terminal (14A) or emitter terminal is connected via a contacting layer (7) to a corresponding source electrode or emitter electrode of the first semiconductor component (10) and a first gate terminal (16) or base terminal is connected via a contacting layer (7) to a corresponding gate electrode or base electrode of the first semiconductor component (10).
8. The semiconductor module (1) as claimed in claim 4, characterized in that within the housing (3) a second drain terminal (22A) or collector terminal is connected via a contacting layer (7) to a corresponding drain electrode or collector electrode of the second semiconductor component (20) and a second source terminal (24A) or emitter terminal is connected via a contacting layer (7) to a corresponding source electrode or emitter electrode of the second semiconductor component (20) and a second gate terminal (26) or base terminal is connected via a contacting layer (7) to a corresponding gate electrode or base electrode of the second semiconductor component (20).
9. The semiconductor module (1) as claimed in claim 7, characterized in that only the gate terminals (16, 26) or base terminals of the two semiconductor components (10, 20) are electrically contacted with a printed circuit board.
10. The semiconductor module (1) as claimed in claim 1, characterized in that an end section (9.1) of a phase current wire (9) of an electrical machine forms the contact element (5).
11. The semiconductor module (1) as claimed in claim 1, characterized in that the housing (3) is embodied as a molded housing.
12. The semiconductor module (1) as claimed in claim 1, characterized in that outwardly facing open surfaces of the two first electrical conduction elements (12, 22) terminate in each case flush with an underside (3.2) of the housing (3).
13. The semiconductor module (1) as claimed in claim 1, characterized in that outwardly facing open surfaces of the two second electrical conduction elements (14, 24) terminate in each case flush with a top side (3.2) of the housing (3).
14. The semiconductor module (1) as claimed in claim 12 , characterized in that the housing (3) has an underside and is placed by the underside (3.2) onto a printed circuit board or a heat sink.
15. The semiconductor module (1) as claimed in claim 12, characterized in that the housing (3) has a top side and is placed by way of the top side (3.1) onto the printed circuit board or the heat sink.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0016] FIG. 1 shows a schematic side view of a first exemplary embodiment of a semiconductor module according to the invention in a slug-up design.
[0017] FIG. 2 shows a schematic perspective plan view of the exemplary embodiment of the semiconductor module according to the invention from FIG. 1.
[0018] FIG. 3 shows a schematic perspective plan view of the exemplary embodiment of the semiconductor module according to the invention from FIGS. 1 and 2 without a housing.
[0019] FIG. 4 shows a schematic perspective plan view of the exemplary embodiment of the semiconductor module according to the invention from FIG. 3 without a second electrical conduction element.
[0020] FIG. 5 shows a schematic perspective illustration of one exemplary embodiment of a current path between a first electrical conduction element of a first semiconductor and a second electrical conduction element of a second semiconductor of the semiconductor module according to the invention from FIGS. 1 to 4.
[0021] FIG. 6 shows a schematic illustration of a further exemplary embodiment of the current path from FIG. 5.
[0022] FIG. 7 shows a schematic perspective plan view of a second exemplary embodiment of a semiconductor module according to the invention in a slug-down design.
[0023] FIG. 8 shows a schematic perspective view of the second exemplary embodiment of the semiconductor module according to the invention from FIG. 7 from below.
DETAILED DESCRIPTION
[0024] As is evident from FIGS. 1 to 8, the illustrated exemplary embodiments of a semiconductor module 1 according to the invention in each case comprise at least two semiconductor components 10, 20 which are arranged within a housing 3 in each case between two electrical conduction elements 12, 14, 22, 24 and are electrically conductively connected to the electrical conduction elements 12, 14, 22, 24. In this case, the electrical conduction elements 12, 14, 22, 24 respectively have a contact extension 12.1, 14.2, 22.1, 24.1 that is led out of the housing 3. Moreover, two contact extensions 12.1, 24.1 arranged in different planes are connected to one another outside the housing 3 via a contact element 5, which forms a current path between the two contact extensions 12.1, 24.1 outside the housing 3.
[0025] As is furthermore evident from FIGS. 1 to 8, the contact element 5 extends substantially perpendicularly between the two contact extensions 12.1, 24.1. The contact element 5 is connected for example to the contact extensions 12.1, 24.1 by means of soldering, resistance or laser welding, insulation-displacement connection, crimping or press-fit connection.
[0026] As is furthermore evident from FIGS. 1 to 8, the illustrated exemplary embodiments of the semiconductor modules 1 in each case form an electronic power module comprising a half-bridge circuit which has a high electrical and thermal loading capacity and is composed of two semiconductor components 10, 20 in an integral housing 3, which is directly connected to a phase current wire 9 of an excitation winding of a connected electrical machine (not illustrated). In the exemplary embodiments illustrated, the two semiconductor components 10, 20 are embodied as MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) having the same area requirement. In an alternative exemplary embodiment (not illustrated), the two semiconductor components 10, 20 can be embodied as IGBTs (Insulated Gate Bipolar Transistors).
[0027] FIGS. 3 and 4 show the internal details of the semiconductor module 1 without the housing 3 thereof. As is furthermore evident from FIGS. 3 and 4, a first electrical conduction element 12 of a first semiconductor 10 and a first electrical conduction element 22 of a second semiconductor 20 are formed in each case as a drain terminal 12A, 22A. Moreover, a second electrical conduction element 14 of the first semiconductor 10 and a second electrical conduction element 24 of the second semiconductor 20 are formed in each case as a source terminal 14A, 24A. In this case, the two drain terminals 12A, 22A are arranged with parallel and aligned edges in a common first plane. The two source terminals 14A, 24A are arranged with parallel and aligned edges in a common second plane. As is furthermore evident from FIGS. 3 and 4, a first drain terminal 12A is connected via a contacting layer 7 to a corresponding drain electrode of the first semiconductor component 10. A first source terminal 14A is connected via a contacting layer 7 to a corresponding source electrode of the first semiconductor component 10. A first gate terminal 16 is connected via a contacting layer 7 to a corresponding gate electrode of the first semiconductor component 10. Moreover, a second drain terminal 22A is connected via a contacting layer 7 to a corresponding drain electrode of the second semiconductor component 20. A second source terminal 24A is connected via a contacting layer 7 to a corresponding source electrode of the second semiconductor component 20. A second gate terminal 26 is connected via a contacting layer 7 to a corresponding gate electrode of the second semiconductor component 20. The contacting layers 7 can be formed for example as solder layers, conductive adhesive layers, etc.
[0028] The layer construction drain terminal-contacting layer-semiconductor component-contacting layer-source terminal of the first low-side bridge path is embodied electrically symmetrically with respect to the layer construction drain terminal-contacting layer-semiconductor component-contacting layer-source terminal of the second high-side bridge path. Contrary to the conventional way of closing the current bridge between the first drain terminal 12A and the second source terminal 24A by means of a soldered connector or bond wire within the housing 3, a connection of the contact extension 12.1 of the first drain terminal 12A and of the contact extension 24.1 of the second source terminal 24A by an end section 9.1 of the phase current wire 9 is proposed. This connection can be produced by means of soldering, resistance or laser welding, insulation-displacement connection, crimping or press-fit connectors, since it is arranged outside the housing 3 embodied as a molded housing. A center point of a phase wire section 9.2 forms the phase potential tap. The latter divides the current path of the half-bridge electrically symmetrically into a low-side path and a high-side path of identical impedance, having a low inductance and also a low contact element resistance.
[0029] As is furthermore evident from FIGS. 5 and 6, in particular, an end section 9.1 of a phase current wire 9 of an electrical machine forms the contact element 5. As is furthermore evident from FIG. 6, the end section 7.1 of the phase current wire 9 is embodied as a press-fit eye 9.1A, which is press-fitted into corresponding contact openings 12.2, 24.2 in the contact extension 12.1 of the first drain terminal 12A and in the contact extension 24.1 of the second source terminal 24A.
[0030] As is furthermore evident from FIGS. 1 and 2, in the case of a slug-up design of the semiconductor module 1, a top side 3.1 of the housing 3 terminates flush with outer, open surfaces of the two source terminals 14A, 24A arranged parallel and in alignment, which can be connected to a heat sink (not illustrated in more specific detail) by way of a thermally conductive, electrically isolating intermediate medium. An underside 3.2 of the housing 3 is formed exclusively by a molding compound of the housing 3. The underside 3.2 of the housing 3 is electrically floating and can be connected to a circuit carrier (not illustrated in more specific detail) in a technically advantageous manner by means of a permanently elastic adhesive that exhibits operational durability over its lifetime. The circuit carrier can be embodied as a multilayered printed circuit board, for example. The circuit carrier and the housing 3 of the semiconductor module 1 can thus undergo thermomechanical elongations without cracking and delamination despite different coefficients of thermal expansion. Only the contact extensions 16.1, 26.1 of the gate terminals 16, 26 are electrically connected to the circuit carrier. However, high currents flow only through the contact extensions 12.1, 24.1 of the semiconductor module 1 and the phase current wire 9, and not through the circuit carrier. The contact element power loss in the electric flow field of the semiconductor module 1 therefore flows away predominantly through the open surfaces of the drain terminals 14A, 24A into the heat sink. The circuit carrier and the surrounding components arranged thereon are subjected to only slight thermal and thermomechanical loading.
[0031] As is furthermore evident from FIGS. 7 and 8, in the case of a slug-down design of the semiconductor module 1, the underside 3.2 of the housing 3 terminates flush with outer, open surfaces of the two drain terminals 12A, 22A arranged parallel and in alignment. One of the two open surfaces of the drain terminals 12A, 22A can be soldered to a solder surface on the circuit carrier, such that a high-side current or a low-side current can flow via the circuit carrier. Furthermore, one of the two open surfaces of the drain terminals 12A, 22A can be connected to a rectangularly periodic or hexagonal arrangement of thermal vias in the circuit carrier by way of a plastic, thermally conductive and electrically insulating intermediate medium, which arrangement can pass a heat flow of the semiconductor module 1 into a heat sink (not illustrated). The top side 3.1 of the housing 3 is formed exclusively by the molding compound of the housing 3.
