METHODS OF DETECTING BONDING BETWEEN A BONDING WIRE AND A BONDING LOCATION ON A WIRE BONDING MACHINE
20200006161 ยท 2020-01-02
Inventors
Cpc classification
H01L2224/48147
ELECTRICITY
H01L2224/48465
ELECTRICITY
H01L2225/06506
ELECTRICITY
H01L2224/32225
ELECTRICITY
H01L2225/0651
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L22/14
ELECTRICITY
H01L25/50
ELECTRICITY
H01L2225/06568
ELECTRICITY
H01L2225/06562
ELECTRICITY
H01L22/12
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L2224/48465
ELECTRICITY
H01L2224/48477
ELECTRICITY
International classification
Abstract
A method of determining a bonding status between wire and at least one bonding location of a semiconductor device is provided. The method includes the steps of: (a) bonding a portion of wire to at least one bonding location of a semiconductor device using a bonding tool of a wire bonding machine; and (b) detecting whether another portion of wire engaged with the bonding tool, and separate from the portion of wire, contacts the portion of wire in a predetermined height range, thereby determining if the portion of wire is bonded to the at least one bonding location.
Claims
1. A method of determining a bonding status between wire and at least one bonding location of a semiconductor device, the method comprising the steps of: (a) bonding a portion of wire to the at least one bonding location of a semiconductor device using a bonding tool of a wire bonding machine; and (b) detecting whether another portion of wire engaged with the bonding tool, and separate from the portion of wire, contacts the portion of wire in a predetermined height range, thereby determining if the portion of wire is bonded to the at least one bonding location.
2. The method of claim 1 wherein the portion of wire is bonded to a single bonding location of the semiconductor device, and wherein after step (a) the portion of wire is a conductive bump bonded to the single bonding location.
3. The method of claim 1 wherein the portion of wire is bonded to a plurality of bonding locations of the semiconductor device, and wherein after step (a) the portion of wire is a wire loop providing electrical interconnection between the plurality of bonding locations.
4. The method of claim 3, wherein step (b) includes detecting whether the another portion of wire engaged with the bonding tool contacts each of a plurality of areas of the portion of wire within corresponding predetermined height ranges, thereby determining if the portion of wire is bonded at each of the plurality of areas to corresponding bonding locations of the semiconductor device.
5. The method of claim 4 wherein the another portion of wire is a free air ball seated at a tip of the bonding tool.
6. The method of claim 5 further comprising a step of, after step (b), bonding the free air ball to a stitch bond of the wire loop.
7. The method of claim 1 further comprising the step of (c) detecting whether the another portion of wire engaged with the bonding tool contacts the portion of wire at another predetermined height range, thereby determining if the portion of wire is missing from the at least one bonding location.
8. The method of claim 7 wherein the another predetermined height range is lower than the predetermined height range.
9. The method of claim 8 wherein an x-y location of the bonding tool at the another predetermined height range during step (c) is the same x-y location of the bonding tool at the predetermined height range during step (b).
10. The method of claim 8 wherein an x-y location of the bonding tool at the another predetermined height range during step (c) is different from an x-y location of the bonding tool at the predetermined height range during step (b).
11. The method of claim 1 wherein step (b) includes detecting whether a conductive path is established between (a) the another portion of wire, and (b) the portion of wire.
12. The method of claim 11 wherein step (b) includes detecting whether the conductive path is established by detecting at least one of (a) a predetermined current flow in the conductive path, (b) a predetermined change in capacitance between the conductive path and a ground connection of the wire bonding system, and (c) a predetermined phase shift of current flowing in the conductive path.
13. The method of claim 1 wherein step (b) includes detecting whether the another portion of wire engaged with the bonding tool contacts the portion of wire using a conductive path established between (a) a detection system for detecting whether the another portion of wire engaged with the bonding tool contacts the portion of wire, and (b) the portion of wire.
14. A method of determining a bonding status between wire and at least one bonding location of a semiconductor device, the method comprising the steps of: (a) bonding a portion of wire to the at least one bonding location of a semiconductor device using a bonding tool of a wire bonding machine; and (b) detecting whether another portion of wire engaged with the bonding tool, and separate from the portion of wire, contacts the portion of wire in a non-stick height range.
15. The method of claim 14 wherein the portion of wire is bonded to a single bonding location of the semiconductor device, and wherein after step (a) the portion of wire is a conductive bump bonded to the single bonding location.
16. The method of claim 14 wherein the portion of wire is bonded to a plurality of bonding locations of the semiconductor device, and wherein after step (a) the portion of wire is a wire loop providing electrical interconnection between the plurality of bonding locations.
17. A method of determining a bonding status between wire and at least one bonding location of a semiconductor device, the method comprising the steps of: (a) bonding a portion of wire to the at least one bonding location of a semiconductor device using a bonding tool of a wire bonding machine; and (b) detecting whether another portion of wire engaged with the bonding tool, and separate from the portion of wire, contacts the portion of wire in a bonded height range, thereby determining if the portion of wire is bonded to the at least one bonding location.
18. The method of claim 17 wherein the portion of wire is bonded to a single bonding location of the semiconductor device, and wherein after step (a) the portion of wire is a conductive bump bonded to the single bonding location.
19. The method of claim 17 wherein the portion of wire is bonded to a plurality of bonding locations of the semiconductor device, and wherein after step (a) the portion of wire is a wire loop providing electrical interconnection between the plurality of bonding locations.
20. A method of determining a bonding status between wire and at least one bonding location of a semiconductor device, the method comprising the steps of: (a) bonding a portion of wire to the at least one bonding location of a semiconductor device using a bonding tool of a wire bonding machine; and (b) detecting whether another portion of wire engaged with the bonding tool, and separate from the portion of wire, contacts the portion of wire within a missing wire height range, thereby determining if the portion of wire is bonded to the at least one bonding location.
21. The method of claim 20 wherein the portion of wire is bonded to a single bonding location of the semiconductor device, and wherein after step (a) the portion of wire is a conductive bump bonded to the single bonding location.
22. The method of claim 20 wherein the portion of wire is bonded to a plurality of bonding locations of the semiconductor device, and wherein after step (a) the portion of wire is a wire loop providing electrical interconnection between the plurality of bonding locations.
23. A method of determining a bonding status between wire and at least one bonding location of a semiconductor device, the method comprising the steps of: (a) bonding a portion of wire to the at least one bonding location of a semiconductor device using a bonding tool of a wire bonding machine; (b) detecting whether another portion of wire engaged with the bonding tool, and separate from the portion of wire, contacts the portion of wire in a non-stick height range; (c) if the another portion of wire engaged with the bonding tool does not contact the portion of wire in the non-stick height range in connection with step (b), detecting whether the another portion of wire engaged with the bonding tool contacts the portion of wire in a bonded height range that is lower than the non-stick height range; and (d) if the another portion of wire engaged with the bonding tool does not contact the portion of wire in the bonded height range in connection with step (c), detecting whether the another portion of wire engaged with the bonding tool contacts the bonding location in a missing wire range that is lower than the bonded height range.
24. The method of claim 23 wherein the portion of wire is bonded to a single bonding location of the semiconductor device, and wherein after step (a) the portion of wire is a conductive bump bonded to the single bonding location.
25. The method of claim 23 wherein the portion of wire is bonded to a plurality of bonding locations of the semiconductor device, and wherein after step (a) the portion of wire is a wire loop providing electrical interconnection between the plurality of bonding locations.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] The invention is best understood from the following detailed description when read in connection with the accompanying drawings. It is emphasized that, according to common practice, the various features of the drawings are not to scale. On the contrary, the dimensions of the various features are arbitrarily expanded or reduced for clarity. Included in the drawings are the following figures:
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DETAILED DESCRIPTION
[0023] As used herein, the term semiconductor device is intended to refer to any structure including (or configured to include at a later step) a semiconductor chip or die. Exemplary semiconductor devices include a bare semiconductor die, a semiconductor die on a substrate (e.g., a leadframe, a PCB, a carrier, a semiconductor chip, a semiconductor wafer, a BGA substrate, a semiconductor element, etc.), a packaged semiconductor device, a flip chip semiconductor device, a die embedded in a substrate, and a stack of semiconductor die, amongst others.
[0024] According to certain exemplary embodiments of the invention, methods of determining/detecting a bonding status of a wire bond connection to an electronic package (e.g., to a substrate, to a leadframe, to a semiconductor die, etc.) are provided. For example, methods of determining whether: a proper bond has been formed (e.g., a proper bonded condition); a portion of wire expected to be bonded is absent (e.g., a missing wire condition); a portion of wire expected to be bonded is not bonded (e.g., a non-stick condition); among others. For example, such methods may be performed in real time on a production wire bonding system (e.g., a wire bonding machine).
[0025] Certain methods according to the invention utilize a seated free air ball provided at the tip of the bonding tool, in connection with a detection system (such as a BITS system of Kulicke and Soffa Industries, Inc.) that utilizes the detection of a closed circuit (or an open circuit, or other electrical condition) to detect the presence or absence of a portion of wire expected to be bonded to a bonding location.
[0026] Referring now to
[0027] Wire bonding system 100 also includes a wire bonding tool 108 (e.g., a capillary wire bonding tool), a wire clamp 106, and detection system 110. Wire bonding tool 108 and wire clamp 106 are included as part of a bond head assembly 104. A length of wire 112 is provided to wire bonding tool 108 through wire clamp 106 (shown closed). A free air ball 112a (i.e., a portion of wire 112) is seated at the tip of wire bonding tool 108. An electrical connection 114 is provided between wire clamp 106 and detection system 110. As will be appreciated by those skilled in the art, using detection system 110, with wire clamp 106 in a closed position as shown in
[0028] For example, detection system 110 can detect a predetermined amount (e.g., a very small amount) of current. Such a detection system may be particularly desirable when the detection system is a DC (i.e., direct current) based circuit system. According to another example, the detection system can detect a predetermined change in capacitance that would occur when there is contact between free air ball 112a seated in wire bonding tool 108 and wire loop 122. Such a detection system may be particularly desirable when the detection system/circuit is an AC (i.e., alternating current) based system. The detection system/circuit may be configured to be very sensitive to the electrical change detected (e.g., a small amount of current flow, a small change in capacitance, etc), and as such, wire loop 122 will tend to not be deformed by gentle contact with free air ball 112a.
[0029] Using the various methods of the invention, real-time feedback regarding the bonding status of a portion of a wire loop (or other portion of wire such as a conductive bump as shown in
[0030] Wire bonding system 100 shown in
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[0032] Specifically,
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[0035] As illustrated in
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[0037] Specifically,
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[0040] Although
[0041] Although the invention is illustrated and described herein with reference to specific embodiments, the invention is not intended to be limited to the details shown. Rather, various modifications may be made in the details within the scope and range of equivalents of the claims and without departing from the invention.