Bonded functionally graded material structure for heat transfer and CTE matching and method of making same
10518353 · 2019-12-31
Assignee
Inventors
Cpc classification
B32B3/266
PERFORMING OPERATIONS; TRANSPORTING
H01L21/30655
ELECTRICITY
B32B15/017
PERFORMING OPERATIONS; TRANSPORTING
B23K26/361
PERFORMING OPERATIONS; TRANSPORTING
H01L21/022
ELECTRICITY
B32B15/01
PERFORMING OPERATIONS; TRANSPORTING
B23K35/286
PERFORMING OPERATIONS; TRANSPORTING
B23K26/389
PERFORMING OPERATIONS; TRANSPORTING
B23K20/002
PERFORMING OPERATIONS; TRANSPORTING
B23K35/302
PERFORMING OPERATIONS; TRANSPORTING
B23K20/2333
PERFORMING OPERATIONS; TRANSPORTING
International classification
H01L21/02
ELECTRICITY
H01L23/373
ELECTRICITY
B23K35/28
PERFORMING OPERATIONS; TRANSPORTING
B23K35/02
PERFORMING OPERATIONS; TRANSPORTING
B23K20/00
PERFORMING OPERATIONS; TRANSPORTING
B23K20/02
PERFORMING OPERATIONS; TRANSPORTING
B23K26/361
PERFORMING OPERATIONS; TRANSPORTING
H01L21/311
ELECTRICITY
B23K35/30
PERFORMING OPERATIONS; TRANSPORTING
B32B15/01
PERFORMING OPERATIONS; TRANSPORTING
B32B3/26
PERFORMING OPERATIONS; TRANSPORTING
Abstract
A method for producing a bonded functionally graded Material (FGM) structure, includes the steps of providing a plurality of dissimilar material layers; forming a first group and a second group of through holes alternately on a plurality of intermediate dissimilar material layers and on a bottom dissimilar material layer, wherein the first group of through holes has a diameter larger than a diameter of the second group of through holes; stacking the plurality of dissimilar material layers on top of one another. A first group of through holes on any dissimilar material layer is arranged corresponding to a second group of through holes on a dissimilar material layer stacked above, and a second group of through holes on any dissimilar material layer is arranged corresponding to a first group of through holes on a dissimilar material stacked right below; and bonding the plurality of dissimilar material layers.
Claims
1. A method for producing a bonded Functionally Graded Material (FGM) structure, comprising: providing a plurality of dissimilar material layers including a top dissimilar material layer and a bottom dissimilar material layer and a plurality of intermediate dissimilar material layers; forming a first group of through holes and a second group of through holes arranged alternately on the plurality of intermediate dissimilar material layers and forming a first group of blind holes and second group of blind holes arranged alternately on the bottom dissimilar material layer, wherein the first group of through holes has a diameter larger than a diameter of the second group of through holes; cleaning surfaces of the plurality of dissimilar material layers; stacking the plurality of dissimilar material layers on top of one another consecutively from a bottom dissimilar material layer to a top dissimilar material layer, wherein a first group of through holes on any dissimilar material layer is arranged corresponding to a second group of through holes on a dissimilar material layer stacked above, and a second group of through holes on any dissimilar material layer is arranged corresponding to a first group of through holes on a dissimilar material stacked right below; and bonding the plurality of dissimilar material layers using a bonding process.
2. The method for producing a bonded Functionally Graded Material (FGM) structure according to claim 1, wherein cleaning surfaces of the plurality of dissimilar material layers includes using acid or alkaline solutions to remove oxide material from the dissimilar material layers.
3. The method for producing a bonded Functionally Graded Material (FGM) structure according to claim 1, wherein cleaning surfaces of the plurality of dissimilar material layers includes using etchant consisting of 75%-80% phosphoric acid (H3PO4), 0%-10% acetic acid (CH3COOH), 0%-10% nitric acid (HNO3), and 5%-15% water (H2O) to remove oxide material from the dissimilar material layers.
4. The method for producing a bonded Functionally Graded Material (FGM) structure according to claim 1, wherein bonding the plurality of dissimilar material layers using a bonding process includes the following steps: disposing the stacked plurality of dissimilar material layers in a bonding apparatus; and applying a mechanical force or an isostatic pressure to the dissimilar material layers, the pressure is distributed within the dissimilar material layers, every dissimilar material layer of the plurality of intermediate dissimilar material layers is extruded through the second group of through holes on a dissimilar material layer stacked right below and lock into the first group of through holes on an adjacent dissimilar material layer, and thus form a plurality of interlock structures in the plurality of dissimilar material layers.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The above features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:
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DETAILED DESCRIPTION OF THE EXAMPLE EMBODIMENTS OF THE PRESENT INVENTION
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(10) Referring now to
(11) Referring to
(12) In an example embodiment according to the present invention, there may be more FGM layers arranged between the top FGM layer and the bottom FGM layer. In this example embodiment, except for the FGM layer adjacent to the top FGM layer, all other FGM layers arranged between the top FGM layer and the bottom FGM layer each may have a structure similar to the structure of the FGM layer 106, 108 or 110.
(13) Referring now to
(14) The following is a description of a process for making bonded materials according to example embodiments of the present invention. First, a cleaning process is performed on all materials, namely, the FGM layers. In general, there are three methods used to remove aluminum oxide: mechanical, chemical, and plasma. There are also combinations of these three methods. Chemical methods to remove aluminum oxide use acid (nitric acid, HNO3) or alkaline (sodium hydroxide, NaOH) solutions. An example of a known acid cleaning process is to immerse an aluminum part in a 50% nitric acid aqueous solution at the room temperature for 15 minutes. The part is then rinsed in cold water, then rinsed in hot water, and then dried. Acid and alkaline cleaning processes can be combined. A known combination cleaning process is to immerse an aluminum part in a 5% NaOH solution and heat the aluminum part to 70 C. for one minute. Then, rinse the aluminum part in cold water, and then immerse the aluminum part in a 50% nitric acid aqueous solution at the room temperature for about 30 seconds, followed by a cold water rinse and then a hot water rinse, and then dry the aluminum part. After the aluminum oxide layer is removed, the aluminum component must be processed quickly because a new oxide layer begins to form as soon as the cleaning process ends.
(15) An etching process taught in related U.S. provisional patent application Ser. No. 62/097,030, filed 2014 Dec. 27 by the inventor of the present invention works well. The metal parts are sealed in a chamber or in a can and immersed in an etching solution for about 15 seconds. The etchant consists of 75%-85% phosphoric acid (H.sub.3PO.sub.4), 0%10% acetic acid (CH.sub.3COOH), 0%10% nitric acid (HNO.sub.3), and 5%15% water (H.sub.2O). The etching solution should be at approximately room temperature. After the metal parts are immersed for 15 seconds, the etchant should be drained using a vacuum. The vacuum should be maintained until all of the etchant has evaporated and the pressure inside the chamber is about 110.sup.2 Pa or lower. By following the time temperature and etchant recommendations, about 0.05 m of material will be removed from the aluminum surfaces of the first FGM layer 102. The vacuum action will cause the etchant to boil, and this agitation will displace the aluminum oxide particles. The vacuum, while removing the boiling etchant, will also prevent aluminum plate 102 from further etching. This process will leave the faying surfaces of the FGM layers smooth with no oxides.
(16) At this point, if the plates are etched in a diffusion bonding chamber, they should now be placed in the chamber under a vacuum. If the plates are processed in vacuum cans, load the cans into an isostatic pressure diffusion bonding apparatus. In either case, the diffusion bonding apparatus needs to be first heated to about 550 C.
(17) Referring again to
(18) In an example embodiment according to the present invention, more FGM layers are arranged between the top FGM layer and the bottom FGM layer. In this example embodiment, except for the FGM layer adjacent to the top FGM layer, all other FGM layers arranged between the top FGM layer and the bottom FGM layer each have a structure similar to the structure of the FGM layer 106, 108 or 110. In this example embodiment, any FGM layer may be extruded through a second group of through holes on the FGM layer stacked right below and lock into a first group of through holes on the FGM layer stacked next.
(19) In one embodiment FGM layer 102 has a CTE of about 2310.sup.6. FGM layer 104 has a CTE of about 1710.sup.6. FGM layer 106 has a CTE of about 1510.sup.6. FGM layer 108 has a CTE of about 1310.sup.6. FGM layer 110 has a CTE of about 1010.sup.6 and FGM layer 112 has a CTE of about 810.sup.6, which matches the C for most DBC semiconductor layers and thus provides a reliable bond. The combination of high isostatic pressure and high temperature causes the faying surfaces of the FGM layers to be bonded after a period of about 2 hours. The exact values of the temperature, time, and pressure variables are determined by experiments and modeling of the plate materials. After the bonding process ends, the heater can be deactivated and the chamber can be vented to the atmosphere. When the plate weldments cool they may be removed from the chamber.
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(21) While the present invention has shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.