Electronic device for ESD protection

Abstract

A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

Claims

1. A semiconductor device comprising: a semiconductor body disposed; a first semiconductor region having a first conductivity type and being disposed in the semiconductor body; a second semiconductor region having a second conductivity type opposite the first conductivity type and being disposed in the semiconductor body adjacent the first semiconductor region; a gate region that extends over at least a portion of the second semiconductor region; a third semiconductor region having the second conductivity type and being disposed in the semiconductor body adjacent the first semiconductor region and spaced from the second semiconductor region by the first semiconductor region; a fourth semiconductor region having the first conductivity type and being disposed in the semiconductor body adjacent the second semiconductor region and spaced from the first semiconductor region by the second semiconductor region; a first metallization electrically connecting the gate region to a first location of the second semiconductor region; and a second metallization electrically connecting a second location of the second semiconductor region to the fourth semiconductor region, such that part of the second semiconductor region located between first and second locations forms a resistive semiconductor region.

2. The semiconductor device according to claim 1, wherein the second semiconductor region and the resistive semiconductor region extend beyond an edge of the gate region.

3. The semiconductor device according to claim 1, wherein the first conductivity type is n-type and the second conductivity type is p-type.

4. The semiconductor device according to claim 1, wherein the first conductivity type is p-type and the second conductivity type is n-type.

5. The semiconductor device according to claim 1, wherein: the first semiconductor region includes a base region of a first bipolar transistor and a collector region of a second bipolar transistor; the second semiconductor region includes a base region of the second bipolar transistor and a collector region of the first bipolar transistor, at least a portion of the base region of the second bipolar transistor forming the resistive semiconductor region; the third semiconductor region includes an emitter region of the first bipolar transistor; and the fourth semiconductor region includes an emitter region of the second bipolar transistor.

6. The semiconductor device according to claim 5, wherein the semiconductor device includes a thyristor with an anode and a cathode, wherein the anode is formed by the third semiconductor region and the cathode is formed by the fourth semiconductor region.

7. The semiconductor device according to claim 6, wherein the semiconductor device further includes a MOS transistor, wherein the first semiconductor region forms a first source/drain region of the MOS transistor, the fourth semiconductor region forms a second source/drain region of the MOS transistor, and the gate region forms a gate of the MOS transistor.

8. The semiconductor device according to claim 7, wherein a trigger voltage of the semiconductor device according is determined by a length of the resistive semiconductor region.

9. A semiconductor device comprising: a first input; a first output; a first thyristor comprising an anode, a cathode, a first bipolar transistor, and a second bipolar transistor, the first and second bipolar transistors being nested and connected between the anode and the cathode; a first MOS transistor coupled between a collector region and an emitter region of the second bipolar transistor, the first MOS transistor having a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor, a second input coupled to the first output; a second output coupled to the first input; a second thyristor comprising an anode, a cathode, a first bipolar transistor, and a second bipolar transistor, the first and second bipolar transistors being nested and connected between the anode and the cathode; and a second MOS transistor coupled between a collector region and an emitter region of the second bipolar transistor, the second MOS transistor having a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

10. The semiconductor device of claim 9, wherein the first input, the first output, the first thyristor, the first MOS transistor, the second input, the second output, the second thyristor, and the second MOS transistor are disposed in the same semiconductor region.

11. The semiconductor device of claim 9, wherein: the first input is coupled to the anode of the first thyristor; the first output is coupled to the cathode of the first thyristor; the second input is coupled to the anode of the second thyristor; and the second output is coupled to the cathode of the second thyristor.

12. The semiconductor device of claim 11, wherein the first input is coupled to a first terminal of a power supply and wherein the first output is coupled to a second terminal of the power supply.

13. A semiconductor device, comprising: a semiconductor body; a thyristor disposed in the semiconductor body, the thyristor having an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side, the first and second bipolar transistors being nested and connected between the anode and the cathode; and a MOS transistor disposed in the semiconductor body, the MOS transistor coupled between a collector region and an emitter region of the second bipolar transistor, the MOS transistor having a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

14. The semiconductor device according to claim 13, wherein the semiconductor body comprises: a first semiconductor region having a first conductivity type and including a base region of the first bipolar transistor and also the collector region of the second bipolar transistor; a second semiconductor region having a second conductivity type opposite to the first conductivity type, incorporating the resistive semiconductor region, the base region of the second bipolar transistor and the collector region of the first bipolar transistor, wherein the gate region extends at least over the base region of the second bipolar transistor; a third semiconductor region having the second conductivity type and including the anode and the emitter region of the first bipolar transistor; a fourth semiconductor region having the first conductivity type and including the cathode and the emitter region of the second bipolar transistor; a first metallization electrically connecting the gate region to a first location of the second semiconductor region; and a second metallization electrically connecting a second location of the second semiconductor region to the fourth semiconductor region, the part of the second semiconductor region located between two locations forming the resistive semiconductor region.

15. The semiconductor device according to claim 14, wherein the first conductivity type is n-type and the second conductivity type is p-type.

16. The semiconductor device according to claim 14, wherein the second semiconductor region and the resistive semiconductor region extend beyond an edge of the gate region.

17. The semiconductor device according to claim 13, wherein a trigger voltage of the semiconductor device according is determined by the resistive semiconductor region.

18. An semiconductor device comprising: a semiconductor body; a thyristor formed in the semiconductor body and having an anode and a cathode, the thyristor comprising a first bipolar transistor and a second bipolar transistor, the first and second bipolar transistors being nested and connected between the anode and the cathode; and a MOS transistor formed in the semiconductor body and having a conduction path coupled in parallel with a primary conduction path of the second bipolar transistor, and a gate connected to the cathode through a resistive semiconductor region formed within the semiconductor body, wherein the MOS transistor is configured to trigger the thyristor during an electrostatic discharge (ESD) event at the anode or the cathode.

19. The semiconductor device according to claim 18, wherein the resistive semiconductor region includes at least a part of a base region of the second bipolar transistor.

20. The semiconductor device according to claim 18, wherein a trigger voltage of the semiconductor device according is determined by the resistive semiconductor region.

21. The semiconductor device according to claim 18, wherein the semiconductor body comprises: a first semiconductor region having a first conductivity type and including a base region of the first bipolar transistor and also a collector region of the second bipolar transistor; a second semiconductor region having a second conductivity type opposite to the first conductivity type, incorporating the resistive semiconductor region, the base region of the second bipolar transistor and a collector region of the first bipolar transistor, wherein a gate region extends at least over the base region of the second bipolar transistor; a third semiconductor region having the second conductivity type and including the anode and an emitter region of the first bipolar transistor; a fourth semiconductor region having the first conductivity type and including the cathode and an emitter region of the second bipolar transistor; a first metallization electrically connecting the gate region to a first location of the second semiconductor region; and a second metallization electrically connecting a second location of the second semiconductor region to the fourth semiconductor region, a part of the second semiconductor region located between two locations forming the resistive semiconductor region.

22. The semiconductor device according to claim 21, wherein the second semiconductor region and the resistive semiconductor region extend beyond an edge of the gate region.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) Other advantages and features of the invention will become apparent upon examining the detailed description of non-limiting embodiments and their implementation, and of the appended drawings in which:

(2) FIGS. 1 to 10 relate to various embodiments of the invention and their implementation.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

(3) In FIGS. 1, 2 and 3, the reference DIS denotes an electronic device fabricated using a technology of the silicon-on-insulator (SOI) type. For example, the invention is fully functional on partially depleted SOI (PDSOI) bulk.

(4) FIG. 2 is a cross-sectional view along the line II-II in FIG. 1, whereas FIG. 3 is a cross-sectional view along the line III-III in FIG. 1.

(5) In such a technology, and as illustrated in these figures, the device DIS is fabricated within a semiconductor film FLM, having for example the P type of conductivity, supported by a layer of buried oxide BX, commonly denoted by those skilled in the art using the acronym BOX, itself supported by a semiconductor carrier substrate SB, for example also of the P type.

(6) As illustrated in these figures, the device DIS is bounded by an insulating region RIS, for example of the shallow trench isolation (or STI) type.

(7) The device DIS comprises, within this semiconductor film FLM for example made of silicon, a first semiconductor region 1 having a first type of conductivity, for example the N type of conductivity. A second semiconductor region 2 has a second type of conductivity opposite to the first, for example the P type of conductivity. A third semiconductor region 3 has the second type of conductivity, here the P type of conductivity. This third semiconductor region is doped P+, in other words it is more highly doped than the second P-doped semiconductor region 2.

(8) As will be seen hereinafter, this third semiconductor region 3 notably forms the anode of a thyristor and, for this purpose, comprises an area 30 comprising a metal silicide and forming an anode contact.

(9) The device DIS furthermore comprises a fourth semiconductor region 4 having the first type of conductivity, in this case the N type of conductivity, which notably forms a cathode for the thyristor. This fourth semiconductor region is more highly doped (doped N+) than the first semiconductor region 1 doped N. This region 4 also comprises an area 40 comprising a metal silicide and forming a cathode contact.

(10) The device DIS also comprises an isolated gate region GR, which can be a semiconductor gate or, as a variant, a metal gate. As illustrated in FIG. 2, this gate region GR here covers, for example by means of a gate oxide, the semiconductor region 2 but also a part of the semiconductor regions 1 and 4. Indeed, as will be seen in more detail hereinafter, this gate GR is the gate of an MOS transistor and the fact that this gate GR covers a part of the semiconductor regions 1 and 4 allows any channel discontinuity in the semiconductor region 2 to be avoided.

(11) Furthermore, as can be seen in FIG. 1, the semiconductor region 2 goes beyond the edge in the direction of the length, in other words in the direction of the y axis, of the gate region GR.

(12) This overlap readily allows the formation of an electrical link between a first location 20 of this second semiconductor region 2 and the gate region GR. Here, this electrical link is formed by a metallization MT1 which can be formed for example at the first metallization level of the integrated circuit incorporating the device DIS.

(13) This device furthermore comprises a second electrical link, also for example formed by a metallization MT2, between a second location 21 of the second semiconductor region 2 and the fourth semiconductor region 4.

(14) The part of the second semiconductor region 2 situated between the two locations 20 and 21 forms a resistive semiconductor region having a resistance R2.

(15) The device DIS is here fabricated using a 0.13 micron technology and its width LX, measured along the x axis, is around 3 microns, whereas its length LY, measured along the y axis, is slightly less than 5 microns.

(16) As illustrated in FIG. 4, which shows an equivalent electrical circuit diagram of the device DIS in FIGS. 1, 2 and 3, it can be seen that the device DIS comprises a thyristor TH having an anode, a cathode, a first bipolar transistor PNP referenced TBP1 situated on the anode side, a second bipolar transistor NPN referenced TBP2 situated on the cathode side.

(17) These two transistors are nested and connected between the anode and the cathode. More precisely, the collector C1 of the first bipolar transistor TBP1 is connected to the base B2 of the second bipolar transistor TBP2 and the collector C2 of the second of the bipolar transistor TBP2 is connected to the base B1 of the first bipolar transistor TBP1.

(18) The emitter E1 of the first bipolar transistor TBP1 is connected to (and forms) the anode 3 of the thyristor.

(19) The emitter E2 of the second bipolar transistor TBP2 is connected to (and forms) the cathode 4 of the thyristor.

(20) Furthermore, an MOS transistor TM is coupled between the collector C2 and the emitter E2 of the second bipolar transistor TBP2. The gate region GR of the MOS transistor TM is connected to the cathode via the metallization MT1, the resistor R2, the second resistive semiconductor region and the metallization MT2.

(21) The dashed line between the base B2 of the transistor TBP2 and the location 20 of the semiconductor region 1 represents schematically the fact that the base region B2 is not floating but is connected to the cathode by means of a portion of the region 1.

(22) The first semiconductor region 1 incorporates the base region B1 of the first bipolar transistor TBP1, together with the collector region C2 of the second bipolar transistor TBP2.

(23) The resistor R1 represents the resistance of this first semiconductor region.

(24) The second semiconductor region 2 incorporates the resistive semiconductor region situated between the locations 20 and 21, together with the base region B2 of the second bipolar transistor TBP2 and the collector region C1 of the first bipolar transistor TBP1.

(25) The third semiconductor region 3 incorporates the anode and the emitter region E1 of the first bipolar transistor TBP1 and the fourth semiconductor region 4 incorporates the cathode and the emitter region E2 of the second bipolar transistor TBP2.

(26) It can be seen that the device DIS comprises the gated thyristor TH comprising the two nested bipolar transistors TBP1 and TBP2 together with the MOS transistor TM. The MOS transistor is able to inject a current into the base B2 of the transistor TBP2 (here an NPN transistor) and hence of improving the triggering of the thyristor.

(27) When an ESD pulse IMP propagates from the anode towards the cathode, the voltage on the gate GR of the MOS transistor will increase thanks to the resistance R2 of the resistive semiconductor region and to the injection of current via the reverse capacitive NP junction between the first semiconductor region 1 and the second semiconductor region 2. At a certain moment, the device goes into lock (the thyristor triggers) and then goes into high injection mode.

(28) The thyristor is then self-sustaining. The current flowing through the thyristor then needs to be cancelled in order to recover the initial non-triggered state.

(29) The value of the resistance R2 of the resistive semiconductor region situated between the locations 20 and 21 allows the trigger voltage of the thyristor to be adjusted. Thus, as illustrated in FIG. 5, for a length LY1 equal to 2.5 microns, a trigger voltage of around 4.6 volts is obtained.

(30) On the other hand, if the length of the device is increased, in other words for a length LY2 greater than LY1, the trigger voltage is decreased. Thus, as illustrated in FIG. 6, for a length LY2 equal to 5 microns, a trigger voltage of around 4.2 volts is obtained.

(31) As illustrated in FIG. 7, the device DIS can be used as a circuit CPR for protecting an electronic component CMP against electrostatic discharges. The component CMP is connected to a first terminal BP and to a second terminal BN of the protection circuit. The electronic component may be a single component or else any electronic system to be protected.

(32) By way of example, when the component CMP is in operation, the terminal BP can be connected to a voltage Vp positive and the terminal BN can be connected to a negative voltage Vn or equal to zero (ground). The fact that the base B2 of the bipolar transistor TBP2 (substrate of the MOS transistor TM) is not floating (since connected to the cathode) improves the stability of the device DIS, in other words reduces the risk of a spurious triggering when the component is in operation.

(33) When the component CMP is not in operation, it may be subjected to an electrostatic discharge typically resulting in a very short current pulse (typically a few microseconds) whose current peak is for example of the order of 2 amps and which occurs typically after 10 nanoseconds. Typically, this corresponds for example to a pulsed potential difference applied between the terminals BP and BN through an R-L-C equivalent circuit, whose peak voltage occurs after 10 nanoseconds with an intensity of 1 to 4 kVolts HBM, for example 4 kVolts HBM for 2.5 amps.

(34) It is recalled here that the letters HBM stand for Human Body Model well known to those skilled in the art in the field of the protection against electrostatic discharges and notably denote an electrical circuit aimed at modeling an electrostatic discharge delivered by a human being and normally used for testing the sensitivity of devices to electrostatic discharges. This HBM electrical circuit, which is the R-L-C equivalent circuit mentioned hereinbefore and to which a high voltage is applied, notably comprises a capacitor of 100 pF which discharges through a resistance of 1.5 kilo-ohms in the device to be tested. Thus, in the present case, an electrostatic discharge of 4 kilovolts HBM means that a potential difference of 4 kilovolts is applied to the HBM electrical circuit.

(35) This current pulse should then flow through the device DIS and not through the component CMP to be protected.

(36) The device DIS accordingly aims to absorb this current pulse and to avoid over-voltages at the terminals of the component CMP.

(37) For this purpose, the anode 3 of the device DIS is connected to the first terminal BP, whereas the cathode 4 of the device is connected to the second terminal BN.

(38) The component CMP is then protected against ESD pulses IMP propagating from the terminal BP towards the terminal BN.

(39) In order to allow a bidirectional protection, it is for example provided, as illustrated in FIG. 8, for the protection circuit CPR to comprise a first device DIS1 with a structure analogous to the device DIS that has just been described, whose anode is connected to the terminal BP and whose cathode is connected to the terminal BN, together with a second device DIS2 with a structure analogous to the first device DIS1, but whose anode is this time connected to the terminal BN and whose cathode is this time connected to the terminal BP. The component CMP can then be protected against the ESD pulses IMP1 propagating from the terminal BP towards the terminal BN and also against ESD pulses IMP2 propagating from the terminal BN towards the terminal BP.

(40) It is particularly advantageous to incorporate devices for protection against electrostatic discharges of the type of those which have just been described into an input-output cell of an integrated circuit.

(41) By way of non-limiting example, such input/output cells IOCL may be disposed, as illustrated in FIG. 9, within a ring RNG on the periphery of the integrated circuit CI.

(42) These cells IOCL can for example transport power supply voltages and/or data signals destined for and/or coming from functional blocks BLG1-BLG3 of the integrated circuit.

(43) As illustrated in FIG. 10, the input-output cell comprises for example an input-output lug PLT for receiving/transmitting a signal. This cell comprises two supply terminals Vdd and Gnd. A first bidirectional protection circuit CPR1 of the type of that which has just been described hereinbefore is disposed between the power supply terminal Vdd and the input-output lug PLT.

(44) A second bidirectional protection circuit CPR2 is disposed between the input-output lug PLT and the second power supply terminal Gnd. Finally, a third bidirectional protection circuit CPR3 is disposed between the two supply terminals Vdd and Gnd.

(45) Thus, such an input-output cell is protected, in an extremely simple manner, against an electrostatic discharge occurring between the two supply terminals Vdd and Gnd, and also against an electrostatic discharge that may occur either between the power supply terminal Vdd and the input-output lug or between the input-output lug and the power supply terminal Gnd. The functional blocks connected between the two terminals Vdd and Gnd are therefore also protected against an electrostatic discharge.