VERTICAL GALLIUM OXIDE TRANSISTOR AND PREPARATION METHOD THEREOF

Abstract

A vertical gallium oxide transistor and a preparation method thereof are provided. The method includes: annealing a gallium oxide material in an oxygen atmosphere at a range of temperature of 1000 to 1400? C. for 1 to 24 h so as to form a single crystal layer, a defective layer and an oxidized layer; removing the defective layer and the oxidized layer on a back of the gallium oxide material and the defective layer on a front of the gallium oxide material so as to obtain an initial sample; and preparing a heavily doped contact layer on the oxidized layer, preparing a source electrode layer on the contact layer, and preparing a trench perpendicular to a plane of the sample, and preparing a gate dielectric layer in the trench to fabricate a gate electrode and a drain electrode.

Claims

1. A preparation method of a vertical gallium oxide transistor, comprising: 1) annealing a gallium oxide material in an oxygen atmosphere at a range of temperature of 1000 to 1400 for 1 to 24 h so as to form a single crystal layer, a defective layer and an oxidized layer; 2) removing the defective layer and the oxidized layer on a back of the gallium oxide material and the defective layer on a front of the gallium oxide material so as to obtain an initial sample; and 3) preparing a heavily doped contact layer on the oxidized layer, preparing a source electrode layer on the contact layer, and preparing a trench perpendicular to a plane of the sample, and preparing a gate dielectric layer in the trench to fabricate a gate electrode and a drain electrode.

2. The preparation method of the vertical gallium oxide transistor according to claim 1, wherein the annealing atmosphere in step 1) further involves an air pressure less than one standard atmospheric pressure, and the oxygen atmosphere is a pure oxygen atmosphere or a mixed atmosphere of oxygen, nitrogen or argon.

3. The preparation method of the vertical gallium oxide transistor according to claim 1, wherein step 3) comprising: 3-1, preparing the heavily doped contact layer on the oxidized layer on the front of the sample, which is then activated by annealing; 3-2, preparing a metal electrode with ohmic contact using a patterning process to form ohmic contact of the source electrode, and performing rapid thermal annealing; 3-3, performing inductively coupled plasma etching to form the trench perpendicular to the plane of the sample, an etching depth being determined according to a depth of the oxidized layer subjected to high-temperature annealing in step 1); 3-4, growing a gate dielectric on surfaces of the trench and the sample; 3-5, fabricating an opening on the gate dielectric using a patterning process so as to expose an electrode region; 3-6, preparing the gate electrode using a patterning process; and 3-7, preparing a metal electrode capable of forming ohmic contact so as to form ohmic contact of the drain electrode, and performing rapid thermal annealing.

4. The preparation method of vertical gallium oxide transistor according to claim 3, wherein in step 3-1, the activating by annealing comprises: annealing in a nitrogen or argon atmosphere at a temperature of 100 to 1100? C. within 1 hour.

5. The preparation method of vertical gallium oxide transistor according to claim 3, wherein the rapid thermal annealing comprises: annealing in a nitrogen or argon atmosphere at a temperature of 400 to 550? C. for 1 minute.

6. The preparation method of the vertical gallium oxide transistor according to claim 1, wherein in preparing the heavily doped contact layer, a doping element is donor impurity, including Si, Sn or Ge.

7. The preparation method of the vertical gallium oxide transistor according to claim 1, wherein preparing the gate electrode, the drain electrode and the source electrode is made by evaporating Ti/Au by electron beam evaporation, magnetron sputtering or thermal evaporation.

8. A preparation method of a vertical gallium oxide transistor, comprising: 1) preparing a high-resistance layer by N-ion implantation on a gallium oxide material so as to form an initial sample with a single crystal layer and a high-resistance layer; and 2) preparing a heavily doped contact layer on an oxidized layer, preparing a source electrode layer on the contact layer, and preparing a trench perpendicular to a plane of a sample, and preparing a gate dielectric layer in the trench to fabricate a gate electrode and a drain electrode.

9. The preparation method of vertical gallium oxide transistor according to claim 8, wherein the N-ion implantation involves energy ranging from 100 to 680 keV, a dose ranging from 10.sup.12 to 10.sup.15 cm.sup.?3, and annealing at a temperature of 900 to 1200? C. in a nitrogen or argon atmosphere for 10 to 120 min.

10. A vertical gallium oxide transistor, prepared by the preparation method according to claim 1.

11. A vertical gallium oxide transistor, prepared by the preparation method according to claim 8.

12. The vertical gallium oxide transistor according to claim 11, wherein the N-ion implantation involves energy ranging from 100 to 680 keV, a dose ranging from 10.sup.12 to 10.sup.15 cm.sup.?3, and annealing at a temperature of 900 to 1200? C. in a nitrogen or argon atmosphere for 10 to 120 min.

13. The vertical gallium oxide transistor according to claim 10, wherein step 3) comprising: 3-1, preparing the heavily doped contact layer on the oxidized layer on the front of the sample, which is then activated by annealing; 3-2, preparing a metal electrode with ohmic contact using a patterning process to form ohmic contact of the source electrode, and performing rapid thermal annealing; 3-3, performing inductively coupled plasma etching to form the trench perpendicular to the plane of the sample, an etching depth being determined according to a depth of the oxidized layer subjected to high-temperature annealing in step 1); 3-4, growing a gate dielectric on surfaces of the trench and the sample; 3-5, fabricating an opening on the gate dielectric using a patterning process so as to expose an electrode region; 3-6, preparing the gate electrode using a patterning process; and 3-7, preparing a metal electrode capable of forming ohmic contact so as to form ohmic contact of the drain electrode, and performing rapid thermal annealing.

14. The vertical gallium oxide transistor according to claim 10, wherein in preparing the heavily doped contact layer, a doping element is donor impurity, including Si, Sn or Ge.

15. The vertical gallium oxide transistor according to claim 10, wherein preparing the gate electrode, the drain electrode and the source electrode is made by evaporating Ti/Au by electron beam evaporation, magnetron sputtering or thermal evaporation.

16. The preparation method of the vertical gallium oxide transistor according to claim 3, wherein in preparing the heavily doped contact layer, a doping element is donor impurity, including Si, Sn or Ge.

17. The preparation method of the vertical gallium oxide transistor according to claim 3, wherein preparing the gate electrode, the drain electrode and the source electrode is made by evaporating Ti/Au by electron beam evaporation, magnetron sputtering or thermal evaporation.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to explain the embodiments of the present disclosure or the technical scheme in the prior art more clearly, the drawings required in the description of the embodiments or the prior art will be briefly introduced below; obviously, the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained according to these drawings by those of ordinary skill in the art without paying creative labor.

[0036] FIG. 1(a) shows a horizontal gallium oxide transistor;

[0037] FIG. 1(b) shows a vertical gallium oxide transistor;

[0038] FIG. 2 is a flowchart of a preparation method of a vertical gallium oxide transistor;

[0039] FIG. 3 shows a vertical gallium oxide transistor with a gate electrode outside; and

[0040] FIG. 4 shows bipolar parallel-connected vertical gallium oxide transistors.

DETAILED DESCRIPTION

[0041] In the following, technical schemes in embodiments of the disclosure will be described clearly and completely in connection with the attached drawings; obviously, the described embodiments are intended to be only a part of the embodiment of the disclosure, but not all of them. On a basis of the embodiments in this disclosure, all other embodiments obtained by the skilled in the art without any creative effort are within the protection scope of this disclosure.

[0042] Terms such as first and second in the claims and specifications of this disclosure are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchanged in appropriate cases, which is only used to describe a way of distinguishing objects with same attributes in embodiments of this application. In addition, terms including and having and any variations thereof are intended to cover non-exclusive inclusion, so that a process, method, system, product or apparatus containing a series of units need not be limited to those units, but may include other units not explicitly listed or inherent to these processes, methods, products or apparatus.

Embodiment 1

[0043] A vertical gallium oxide transistor is disclosed in this embodiment, in which high-temperature annealing technology in an oxygen atmosphere is adopted to prepare a quasi-P-type doping for replacing p-type doping so as to realize device functions. As shown in FIG. 1(b) and FIG. 2, the vertical gallium oxide transistor is prepared as follows.

[0044] 1) A gallium oxide material is annealed in an oxygen atmosphere at a range of temperature of 1000 to 1400? C. for 1 to 24 h so as to form a single crystal layer 1, a defective layer 2 and an oxidized layer 3.

[0045] 2) The defective layer 2 and the oxidized layer 3 on a back of the gallium oxide material and the defective layer 3 on a front of the gallium oxide material are removed so as to obtain an initial sample.

[0046] 3) A heavily doped contact layer 4 is prepared on the oxidized layer, a source electrode layer 5 is prepared on the contact layer, and a trench 6 perpendicular to a plane of the sample is prepared, and a gate dielectric layer 7 in the trench to fabricate a gate electrode 8 and a drain electrode 9 is prepared.

[0047] The annealing atmosphere further involves an air pressure equal to or greater than one standard atmospheric pressure, and the oxygen atmosphere is a pure oxygen atmosphere or a mixed atmosphere of oxygen, nitrogen or argon.

[0048] In step 2), BCl.sub.3 and Ar or Cl.sub.2 are used as etching gases to perform the inductively coupled plasma etching so as to etch away the defective layer and oxidized layer on the back and the defective layer on the front.

[0049] With regard to step 3) in which the heavily doped contact layer is prepared on the oxidized layer, the source electrode layer is prepared on the contact layer, and the trench perpendicular to the plane of the sample is prepared, and the gate dielectric layer is prepared in the trench to fabricate the gate electrode and the drain electrode. Detailed description is as follows.

[0050] 3-1, the heavily doped contact layer is prepared on the oxidized layer on the front of the sample, which is then activated by annealing.

[0051] The heavily doped contact layer (implanted layer) is formed by epitaxial growth or ion implantation. Doping elements can be donor impurities such as Si, Sn, Ge, etc., and are activated by annealing at a temperature of 100 to 1100? C. in a nitrogen or argon atmosphere for 1 hour. This is made to improve quality of ohmic contact of a source. A preparation process of the contact layer is not limited to these two types. If the technology can be realized, other schemes are not excluded, which is the same as preparation of other layers in the following.

[0052] 3-2, a metal electrode with ohmic contact is prepared using a patterning process to form ohmic contact of the source electrode, and rapid thermal annealing is performed.

[0053] The patterning is made by photolithography and a Ti/Au or Cr/Au metal electrode can be evaporated by electron beam evaporation, magnetron sputtering or thermal evaporation, so as to form ohmic contact of the source electrode. A rapid thermal annealing mode is adopted to anneal in an atmosphere of nitrogen or argon gas for about 1 minute at a temperature of 400 to 550? C. so as to improve contact quality of the ohmic contact.

[0054] 3-3, inductively coupled plasma etching is performed to form the trench perpendicular to the plane of the sample, an etching depth is determined according to a depth of the oxidized layer subjected to high-temperature annealing in step 1).

[0055] BCl.sub.3 and Ar or Cl.sub.2 are used as etching gases to perform the inductively coupled plasma etching so as to form the trench perpendicular to the plane of the sample. The etching depth needs to be determined according to effect of annealing at the oxygen atmosphere or ion implantation, which is generally in a range of 100 nanometers to 5 microns.

[0056] 3-4, a gate dielectric is grown on surfaces of the trench and the sample.

[0057] Atomic layer deposition, magnetron sputtering or electron beam evaporation is adopted to grow high-quality gate dielectric, such as aluminum oxide, hafnium oxide, zirconium oxide, silicon oxide or stacked layers of above dielectrics. A total thickness of the dielectric is in a range of 10 nm to 200 nm.

[0058] 3-5, an opening is fabricated on the gate dielectric using a patterning process so as to expose an electrode region.

[0059] The patterning is made by photolithography and an opening 10 is fabricated on the gate dielectric by etching to expose an electrode region. The etching can be dry etching or wet etching.

[0060] 3-6, the gate electrode is prepared using a patterning process.

[0061] The patterning is made by photolithography and Ni/Au or other metal or polycrystalline is evaporated by electron beam evaporation, magnetron sputtering or thermal evaporation, so as to form the gate electrode.

[0062] 3-7, a metal electrode capable of forming ohmic contact is prepared so as to form ohmic contact of the drain electrode, and rapid thermal annealing is performed.

[0063] Ti/Au or other metal capable of forming ohmic contact are evaporated by electron beam evaporation, magnetron sputtering or thermal evaporation so as to form ohmic contact of the drain electrode, and rapid thermal annealing is adopted to anneal at a temperature of 400 to 550? C. for about 1 minute in a nitrogen or argon gas atmosphere so as to improve contact quality of the ohmic contact.

[0064] Step 3 to 7 can be switched to be any one of steps 3-1 to 3-6 without affecting a final result. An order of other steps is not interchangeable.

Embodiment 2

[0065] Based on a scheme in Embodiment 1 above, a more limited preparation method of a preferred vertical gallium oxide transistor and a vertical gallium oxide transistors prepared by this method are provided in this embodiment, which includes following steps 1) to 9).

[0066] In step 1) a gallium oxide material is annealed in a pure oxygen atmosphere at 1150? C. for 6 hours at a standard atmospheric pressure.

[0067] In step 2), BCl.sub.3 and Ar or Cl.sub.2 are used as etching gases to perform the inductively coupled plasma etching so as to etch away the defective layer and oxidized layer on the back and the defective layer on the front.

[0068] In step 3), the heavily doped contact layer is formed by ion implantation. A doping element can be Si, and is activated by annealing at a temperature of 950? C. in an argon atmosphere for 1 hour, with allowable errors in temperature and time.

[0069] In step 4), patterning is made by photolithography and Ti/Au is evaporated by electron beam evaporation, so as to form ohmic contact of the source electrode. A rapid thermal annealing mode is adopted to anneal in a nitrogen atmosphere at 470? C. for 1 minute.

[0070] In step 5), BCl.sub.3 and Ar are used as etching gases to perform the inductively coupled plasma etching so as to form a trench of 1 micron perpendicular to the plane of the sample.

[0071] In step 6), high-quality 50 nm alumina is grown in the trench using atomic layer deposition.

[0072] In step 7), patterning is made by photolithography and an opening is fabricated on the alumina gate dielectric by dry etching to expose a source electrode region below.

[0073] In step 8), patterning is made by photolithography and Ni/Au is evaporated by electron beam evaporation, so as to form the gate electrode.

[0074] In step 9), Ti/Au is evaporated by electron beam evaporation to form ohmic contact of the drain electrode, and rapid thermal annealing is adopted to anneal at 470? C. in a nitrogen atmosphere for about 1 minute to improve contact quality of the ohmic contact.

[0075] Step 9 can be switched to any one of steps 3 to 8 without affecting a final result. An order of other steps is not interchangeable.

Embodiment 3

[0076] Based on schemes of Embodiment 1 and Embodiment 2, another preparation method of a vertical gallium oxide transistor is provided, with difference that in step 1, a high-resistance layer is prepared by N-ion implantation on a gallium oxide material so as to form an initial sample with a single crystal layer and a high-resistance layer and the step 2) is removed, remaining steps remain unchanged, which can be referred to the above.

[0077] The N-ion implantation involves energy ranging from 100 to 680 keV, a dose ranging from 10.sup.12 to 10.sup.15 cm.sup.?3, and annealing at a temperature of 900 to 1200? C. in a nitrogen or argon atmosphere for 10 to 120 min.

[0078] As a preferred embodiment, the N-ion implantation involves energy of 480 keV, a dose of 10.sup.14 cm.sup.?3, and annealing at a temperature of 1100V in a nitrogen atmosphere for 1 hour.

Embodiment 4

[0079] Based on schemes of Embodiments 1 to 3, as a variation, a vertical gallium oxide transistor with a gate electrode outside is further prepared as shown in FIG. 3, and positions of the gate electrode and the source electrode are adjusted, preparation steps of the above embodiment are kept unchanged, positions of the gate electrode and the source electrode are exchanged, and trenches are prepared on both sides of the initial sample.

[0080] As another variation, two or more devices are connected in multi-level parallel, and FIG. 4 shows a structure of two devices in parallel.

[0081] An operation principle of the device of the disclosure is as follows.

[0082] In the disclosure, the high-resistance layer is formed by annealing at the oxygen atmosphere or N-ion implantation, and the heavily doped layer is formed by Si, Sn or Ge ion implantation, so that a channel between the source electrode and the drain electrode in the transistor structure forms an n-type conductive layer-high-resistance layer-n-type conductive layer composition form, which causes the device to be normally in a state where current cannot be conducted. When a positive bias is applied as a gate voltage of the device, electrons are accumulated at the high-resistance layer, and the original channel forms a composition form of n-type conductive layer-electron accumulation layer-n-type conductive layer, and the state of the device changes to a state where current can be conducted. Therefore, switching characteristics of the transistor are realized.

[0083] The above is only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited to this, and any change or substitution within the technical scope disclosed by the present disclosure should be encompassed within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.