Device and method for performing maximum power point tracking for photovoltaic devices in presence of hysteresis
10488879 · 2019-11-26
Assignee
Inventors
- Norman Pellet (Morges, CH)
- Fabrizio Giordano (Saint-Sulpice, CH)
- Shaik Mohammed Zakeeruddin (Bussigny, CH)
- Michael GRÄTZEL (Saint-Sulpice, CH)
Cpc classification
G05F1/67
PHYSICS
Y02E10/547
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y02E10/56
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y02E10/541
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y02E10/544
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H01L31/028
ELECTRICITY
Y02E10/542
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H10K30/151
ELECTRICITY
Y02E10/549
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
International classification
G05F1/67
PHYSICS
H01L31/028
ELECTRICITY
H01L31/032
ELECTRICITY
Abstract
A photovoltaic system including a solar cell having a hysteretic behavior; and a power device configured to extract a maximum power from the solar cell by forcing power oscillations of the power output by the solar cell.
Claims
1. A method for tracking a maximum power output of a solar cell in presence of hysteresis, comprising the steps of: sampling a voltage and a current of the solar cell (V(k), I(k)); determining a voltage variation and a current variation by substracting respectively from the sampled voltage a value of a previously sampled voltage (V(k)V(k1)) and from the sample current a previously sampled current (I(k)I(k1)); comparing respectively the voltage variation and the current variation to a determined typical system noise value and rejecting the sampled voltage value and the sampled current as non-significant if the comparing shows that the voltage variation and the current variation are inferior to the determined typical system noise value; computing the power for the sampled voltage and current; comparing the computed power to the previously computed power for previously sampled voltage and current; incrementing the voltage by sign(dV).Math.V.sub.DAC if the computed power is greater than the previously computed power; incrementing the voltage by sign(dV).Math.V.sub.DAC if the computed power is not greater than the previously computed power and the dV is positive and the relative decrement of power is smaller of the forward power threshold efw; incrementing the voltage by sign(dV).Math.V.sub.DAC if the computed power is not greater than the previously computed power and the dV is negative and the relative decrement of power is smaller of the backward power threshold ebw; incrementing the voltage by sign(dV).Math.V.sub.DAC if the computed power is not greater than the previously computed power and the dV is positive and the relative decrement of power is bigger of the forward power threshold efw; and incrementing the voltage by sign(dV).Math.V.sub.DAC if the computed power is not greater than the previously computed power and the dV is negative and the relative decrement of power is bigger of the backward power threshold ebw.
2. The method according to claim 1, wherein the determined typical noise value of the system is about 1% of the current or voltage at maximum power point.
3. The method according to claim 1, wherein the selected forward power threshold efw and the backward power threshold ebw are in the range between 0.2% and 20% for both parameters.
Description
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS
(1) The accompanying drawings, which are incorporated herein and constitute part of this specification, illustrate the presently preferred embodiments of the invention, and together with the general description given above and the detailed description given below, serve to explain features of the invention.
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(10) Herein, identical reference numerals are used, where possible, to designate identical elements that are common to the figures. Also, the images are simplified for illustration purposes and may not be depicted to scale.
DETAILED DESCRIPTION OF THE SEVERAL EMBODIMENTS
(11) According to one aspect of the present invention, with the system, device, or method, it is possible to improve the traditional device for interfacing and harvesting power from photovoltaic systems without failing in tracking the maximum power output of Solar cells in presence of hysteresis. To alleviate the hysteretic response and non-optimal power tracking, an optimized power inversion threshold is added to the classical Perturb and Observe algorithm, which makes the solar cell enter into a regime of forced oscillations.
(12) According to an aspect, the advantages of the system, method and device include an easy implementation, control of the level of oscillations of the power output, and effective maximization of the power output of solar cells, not limited to Perovskite Solar cells, in presence of hysteresis.
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(14) These devices comprise an adsorber 813 and 833 an electron transporting layer 814 and 834 and a hole transporting layer 812 and 832 encapsulated between a glass with a conductive Fluorinated Tin Oxide (FTO) layer 815 and 835 and a metal Counterelectrode 811 and 831, as shown in
(15) In a preferred embodiment, the controller includes a hardware processor that is a programmable, for example an Arduino Nano, mounted onto the board. The hardware processor is operatively connected to a memory, and the memory can store computer-readable instructions thereon, the computer-readable instructions executable by the hardware processor the perform a method of for tracking a maximum power output of a solar cell in presence of hysteresis.
(16) Perturb and Observe relies on hill-climbing, in other words, the power output is maximized by constantly perturbing voluntarily the operating voltage, unlike steady state methods such as fractional voltage or fractional current where a constant voltage or current is applied to the solar array and is based on the knowledge of the j-V characteristics of the PV array and are therefore not suitable for ageing tests. In Perturb and Observe, the power of the array is sampled and compared to the previous value. According to some aspects of the present invention, an additional condition has to be satisfied as a tracking goal. The new power needs to be higher than a defined threshold before inverting the voltage scan direction, see for example
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(19) Perturb and Observe algorithms are employed in photovoltaic systems in order to maximize the power output from a solar panel or an array of solar panels. According to one aspect of the present invention, the system, device and method addresses modifications of the background art of these algorithms in presence of hysteretic behaviour of the solar cells.
(20) The standard algorithm as shown in
(21) However, this implementation of
(22) In light of these problems and drawbacks, according to an aspect of the present invention, the exemplary algorithm shown in
(23) Adding this hysteretic controller algorithm forces the tracker to scan further into forward bias before switching to backward scan. This has the effect of reducing the bias drift, but also furnishes a parameter to control the magnitude of the oscillations. As a net result, an improved power conversion efficiency is measured. When the threshold is set low, which would signify that the algorithm is similar to the background art algorithm, the device will be tracked at lower bias than optimal, however if the threshold is high, the power output will oscillate. Such thresholds are usually not required for currently marketed photovoltaic arrays. The average power output of the solar cell is largely unaffected by the backward to forward threshold because of the direction of the hysteresis: when the device is switched from forward to backward scanning, the power immediately increases, hence the backward to forward threshold parameter is not required for stabilization.
(24) Referring again to
(25) The detailed algorithm operates the following instructions. First, the algorithm samples a voltage and a current of the solar cell (V(k), I(k)), determines a voltage variation and a current variation by substracting respectively from the sampled voltage a value of a previously sampled voltage (V(k)V(k1)) and from the sample current a previously sampled current (I(k)I(k1)). In the ensuing step, the algorithm compares respectively the voltage variation and the current variation to a determined typical system noise value. For example, in a preferred embodiment, 1% of the current or voltage at maximum power point is considered a typical system noise value, and the algorithm rejects the sampled voltage value and the sampled current as non-significant if the comparing shows that the voltage variation and the current variation are inferior to the determined system noise value. The algorithm computes the power for the sampled voltage and current and compares it to the previously computed power for previously sampled voltage and current.
(26) Depending on the values coming from these comparisons, the algorithm operates on the bias of the solar cell as stated in the following conditions:
(27) (i) increments the voltage by sign(dV).Math.V.sub.DAC if the computed power is greater than the previously computed power;
(28) (ii) increments the voltage by sign(dV).Math.V.sub.DAC if the computed power is not greater than the previously computed power and the dV is positive and the relative decrement of power is smaller of the forward power threshold efw;
(29) (iii) increments the voltage by sign(dV).Math.V.sub.DAC if the computed power is not greater than the previously computed power and the dV is negative and the relative decrement of power is smaller of the backward power threshold ebw;
(30) (iv) increments the voltage by sign(dV).Math.V.sub.DAC if the computed power is not greater than the previously computed power and the dV is positive and the relative decrement of power is bigger of the forward power threshold efw; and
(31) (iiv) increments the voltage by sign(dV).Math.V.sub.DAC if the computed power is not greater than the previously computed power and the dV is negative and the relative decrement of power is bigger of the backward power threshold ebw.
(32) The power output is strongly correlated to .sub.fw, the forward to backward threshold, for reasons mentioned above. By preventing the device from switching too easily from forward to backward scan, oscillations can be avoided. An example of the dependence of the power on the threshold value is given in
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(34) Strikingly, for some perovskite cells, it has been found that the optimal set of oscillation thresholds is not the one that minimizes the oscillation, which is unexpected to one of ordinary skill in the art because any voltage away from the maximum power point would be expected to be less than optimal, given classical MPPT schemes. An example of effective tracking with different forward to backward thresholds is shown for a device in
(35) According to some aspects of the present invention, with the present device, system, and method, this poling effect to help the charge extraction when the device is strongly biased. Indeed this feature can be used to enhance the power output of the cell by temporarily poling the device at higher potential, and the overall gain in average power outweighs the losses due to oscillations. This is a property of hysteretic perovskite-based solar cells
EXAMPLES OF APPLICATIONS
(36) Referring again to
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(38) In this example, the effect of the introduction of thresholds in the conventional algorithm is shown. Trace 503 is the the power extracted from the perovskite device with the conventional algorithm. Trace 502 the power extracted from the perovskite device with the modified algorithm according to one aspect of the present system, device, and method. Trace 504 the power extracted from the perovskite device according to another aspect of the present system, device, and method with the modified algorithm with a regime of forced oscillations.
(39) Experimental details of the device fabrication for Bromide based devices:
(40) FAPbBr3 device fabrication: all materials were purchased from Sigma-Aldrich or Acros Organics and were used as received. FAPbBr3 films were deposited using sequential deposition method. 1.2 M PbBr2 precursor solution in DMF+DMSO mixture (1:1 volume ratio) was prepared by constant stirring at 60 C. for 30 min. 50 uL of 1.2 M PbBr2 precursor solution was spin coated onto the mesoporous TiO2 films at 3000 rpm for 30 s. This was followed by annealing the films at 80 C. for 15 min. After cooling to room temperature, the PbBr2 films were dipped into isopropanol solution of FABr (50103 m) for 5 min at 60 C., rinsed with 2-propanol for 5 s and dried at 80 C. for 30 min. Spiro-OMeTAD as HTM was deposited by spin coating 40 L of the prepared solution at 4000 rpm for 30 s. The HTM solution was prepared by dissolving 72.3 mg (2,2,7,7-tetrakis(N,N-di-p-methoxyphenylamine)-9,9-spirobifluorene) (spiro-OMeTAD), 17.5 L of a stock solution of 520 mg mL-1 bis(trifluoromethylsulphonyl)imide in acetonitrile, and 29 L of a stock solution of 300 mg mL-1tris(2-(1H-pyrazol-1-yl)-4-tert-butylpyridine)cobalt(III) bis(trifluoromethylsulphonyl)imide in acetonitrile, and 28.8 L 4-tert-butylpyridine in 1 mL chlorobenzene. The device fabrication was carried out under controlled atmospheric conditions with humidity <2%. Finally, device fabrication was completed by thermally evaporating 70 nm of gold layer as a back contact.
(41) In
(42) Fluorine-doped tin oxide (FTO) glass was etched to form the two detached electrodes with zinc powder and diluted hydrochloric acid. The glass was then cleaned by sonication in 2% Hellmanex solution. Thereafter, the glass substrates were rinsed with deionized water and Ethanol and dried with compressed air and subject to UV-Ozone treatment for 15 min.
(43) A compact hole blocking layer of TiO2 was deposited onto the glass by spray pyrolysis. The precursor solution consisted of 600 l of titanium diisopropoxide bis(acetylacetonate), 400 l of acetylacetone in 9 mL of ethanol, which was then sprayed with the carrier gas oxygen at 450 C. A scaffold of mesoporous TiO2 (m-TiO2) was deposited by spin coating a 1:5 (w/w) dispersion of TiO2 with particle size of 30 nm in Ethanol at 4000 rpm for 10 sec to maintain a thickness of about 300 nm. The thus formed films were then heated up to 450 C. and sintered at that temperature for 30 min and allowed to cool to 100 C. A surface treatment of the m-TiO2 was carried out by spincoating a solution of 10 mg/mL of Bis(trifluoromethane)sulfonimide lithium salt in Acetonitrile at 3000 rpm for 10 sec. The substrates were then baked again by the procedure described above. The substrates were then baked again by the procedure described above. The cooled substrates were then used for the deposition of perovskite upon them.
(44) Upon cooling to room temperature, the perovskite layer was deposited in a dry air-filled glovebox by spin coating the perovskite precursor solution. The latter consisted in a solution containing FAI (1 M), PbI.sub.2 (1.1 M), MABr (0.2 M) and PbBr.sub.2 (0.2 M) in anhydrous dimethylformamide/dimethylsulphoxide (4:1 (v:v)) solution. The perovskite solution was spin coated in a two-step program at 1,000 and 6,000 r.p.m. for 10 and 30 s, respectively. During the second step, 120 l of clorobenzene was poured on the spinning substrate 10 s prior the end of the program. The substrates were then annealed at 100 C. for 1 h in nitrogen-filled glove box.
(45) The HTM was subsequently deposited on the top of the perovskite layer by spin coating its solution at 4000 rpm for 20 s with a ramp of 2000 rpm s-1. To the prepared solution of 50 mg of spiro-OMeTAD in 574 l of CB, 20 uL of tert-butylpyridine, 11.4 l of 1.8M LiTFSI in acetonitrile and 4.9 l of 0.25M Cobaltsalt (FK 209) in Acetonitrile were added as dopants.
(46) Finally, device fabrication was completed by thermally evaporating 70 nm of gold layer as a back contact.
(47) Induced perturbation is easily implementable in any microcontroller-based MPPT that regulates the duty cycle of a DC/DC converter. Returning to
(48) While the invention has been disclosed with reference to certain preferred embodiments, numerous modifications, alterations, and changes to the described embodiments, and equivalents thereof, are possible without departing from the sphere and scope of the invention. Accordingly, it is intended that the invention not be limited to the described embodiments, and be given the broadest reasonable interpretation in accordance with the language of the appended claims.