Substrate for organic electronic device and method of manufacturing the same

Abstract

Provided are a substrate for an OED, a method of manufacturing the same, and a use thereof. The substrate includes a flexible base film and an inorganic material layer, and the inorganic material layer includes a multilayer structure of at least two thin layers. Such an inorganic material layer may have an excellent physical property, for example, a barrier property, by inhibiting crystallinity. In addition, by employing the multilayer structure, an inorganic material layer having a physical property which is difficult to be realized by a conventional inorganic material layer, for example, a high refractive index, in addition to the barrier property may be formed.

Claims

1. An organic electronic device (OED), comprising: a substrate for the organic electronic device (OED), and a device region having a first electrode layer, an organic material layer, and a second electrode layer, wherein the substrate comprises: a flexible base film having a haze of 40% to 90% and having a glass transition temperature of about 200 C. or more, and a refractive index with respect to light having a wavelength of 550 nm of 1.8 or more and comprising scattering particles having an average particle diameter of 50 to 100 nm; and an inorganic material layer formed on the base film and including a stack structure of alternating first and second sub layers each having a thickness of 7 nm or less, wherein the inorganic material layer has a thickness of 10 to 100 nm, wherein the inorganic material layer includes 4 sub layers or more and 45 sub layers or less, and does not include a sub layer having a thickness of more than 7 nm, wherein the inorganic material layer and the base film have a difference in refractive index of 1 or less, wherein the device region is on the inorganic material layer of the substrate, wherein the first electrode layer is a transparent electrode layer and the second electrode layer is a reflective electrode layer, wherein the first electrode layer is closer to the substrate than the second electrode layer, and wherein the base film comprises a functional group chemically reacted with the inorganic material layer, and the functional group is at least one selected from the group consisting of a hydroxyl group, an amino group and carboxyl group.

2. The organic electronic device (OED) according to claim 1, wherein the first sub layer and the second sub layer are stacked in contact with each other, and are each of a different material selected from an oxide, a nitride and an oxynitride.

3. The organic electronic device (OED) according to claim 1, wherein the inorganic material layer further includes a third sub layer of a material different from the first and second sub layers.

4. The organic electronic device (OED) according to claim 1, wherein the first sub layer has a refractive index with respect to a wavelength of 550 nm of 1.4 to 1.9, and the second sub layer has a refractive index with respect to a wavelength of 550 nm of 2.0 to 2.6.

5. The organic electronic device (OED) according to claim 1, wherein the inorganic material layer has a refractive index with respect to a wavelength of 550 nm of 1.8 to 2.2.

6. The organic electronic device (OED) according to claim 1, wherein the substrate has a water vapor transmission rate (WVTR) of 10.sup.6 to 10.sup.3g/m.sup.2/day.

7. A light source for a display, comprising: the OED of claim 1.

8. A lighting device, comprising: the OED of claim 1.

9. The organic electronic device (OED) of claim 1, wherein the scattering particles comprise hollow particles or particles having a core/shell structure.

10. The organic electronic device (OED) of claim 1, wherein the first sub layer comprises Al.sub.2O.sub.3 and the second sub layer comprises TiO.sub.2.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The above and other objects, features, and advantages of the present application will become more apparent to those of ordinary skill in the art by describing in detail exemplary embodiments thereof with reference to the adhered drawings, in which:

(2) FIG. 1 is a schematic diagram of an exemplary substrate for an OED; and

(3) FIGS. 2 and 3 are images of inorganic material layers according to Example and Comparative Example.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

(4) Hereinafter, exemplary embodiments of the present application will be described in detail with reference to Examples according to the present application and Comparative Examples not according to the present application. However, the scope of the present application is not limited to the embodiments to be disclosed below.

(5) 1. Method of Measuring WVTR

(6) A WVTR of a substrate for an OED was measured by operating a specimen (10 cm10 cm) of a substrate including an inorganic material layer at 40 C. and a relative humidity of 90% according to a manual of PERMATRAN-W3/31 (MOCON, Inc.).

EXAMPLE 1

(7) An inorganic material layer was formed on a flexible base film such as a polyimide (PI) film as a barrier layer by the following method. First, the PI film was disposed on a carrier substrate, which is an organic substrate, and an inorganic material layer was formed by ALD. The inorganic material layer was formed to have a final refractive index of approximately 1.8 to 2.2 by alternately: depositing an Al.sub.2O.sub.3 layer having a refractive index of approximately 1.6 to 1.8 and a TiO.sub.2 layer having a refractive index of approximately 2.0 to 2.4 when each layer was deposited alone. The Al.sub.2O.sub.3 layer was formed by alternately adsorbing a trimethylaluminum layer and a water (H.sub.2O) layer as precursors at approximately 200 C. by ALD known in the art, and the TiO.sub.2 layer was formed by alternately adsorbing a TiCl.sub.4 layer and a water (H.sub.2O) layer as precursors at approximately 200 C. by the ALD known in the art. A structure of the formed inorganic material layer included an Al.sub.2O.sub.3 layer (thickness: 4.5 nm)/TiO.sub.2 layer (thickness: 6.3 nm)/Al.sub.2O.sub.3 layer (thickness: 3.9 nm)/TiO.sub.2, layer (thickness: 5.8 nm)/Al.sub.2O.sub.3 layer (thickness: 3.8 nm)/TiO.sub.2 layer (thickness: 5.8 nm). A TEM image of the inorganic material layer is shown in FIG. 2, and the WVTR and crystallization of the substrate were analyzed as show in Table 1 below.

EXAMPLE 2

(8) A substrate was manufactured by the same method as described in Example 1, except that the inorganic material layer was formed in a bilayer structure (Al.sub.2O.sub.3/TiO.sub.2/Al.sub.2O.sub.3/TiO.sub.2).

COMPARATIVE EXAMPLE 1

(9) An Al.sub.2O.sub.3 layer was formed to a thickness of approximately 36 mm on the same PI film as that used in Example 1 by sputtering. The formed inorganic material layer is shown in FIG. 3, and the WVTR and crystallization of the substrate were analyzed as shown in Table 1 below.

(10) TABLE-US-00001 TABLE 1 Comparative Example 1 Example 2 Example 1 Crystallization Not crystallized Not crystallized Crystallized WVTR 10.sup.5 g/m.sup.2/day 10.sup.4 g/m.sup.2/day 10.sup.1 g/m.sup.2/day

(11) The present application can provide a substrate for an OED, a method of manufacturing the same, and a use thereof. The substrate of the present application includes a flexible base film and an inorganic material layer, and the inorganic material layer includes a multilayer structure of at least two thin layers. Such an inorganic material layer can have an excellent physical property, for example, a barrier property, by inhibiting crystallinity. In addition, by employing the multilayer structure, an inorganic material layer having a physical property which is difficult to be realized by a conventional inorganic material layer, for example, a high refractive index, in addition to the barrier property can be formed.

(12) While the invention has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the related art that various changes in form and details may be made therein without departing from the scope of the invention as defined by the appended claims.