Gallium nitride-based sensor having heater structure and method of manufacturing the same

Abstract

A gallium nitride-based sensor having a heater structure and a method of manufacturing the same are disclosed, the method including growing an n-type or p-type GaN layer on a substrate, growing a barrier layer on the n-type or p-type GaN layer, sequentially growing a u-GaN layer and a layer selected from among an Al.sub.xGa.sub.1-xN layer, an In.sub.xAl.sub.1-xN layer and an In.sub.xAl.sub.yGa.sub.1-x-yN layer on the barrier layer, patterning the n-type or p-type GaN layer to form an electrode, forming the electrode along the pattern formed on the n-type or p-type GaN layer, and forming a sensing material layer on the layer selected from among the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer, wherein a HEMT sensor or a Schottky diode sensor can be heated using an n-GaN (or p-GaN) layer, thus increasing the sensitivity of the sensor and reducing the restoration time.

Claims

1. A method of manufacturing a gallium nitride-based sensor having a heater structure, comprising: growing an n-type or p-type GaN layer on a substrate; growing a barrier layer on the n-type or p-type GaN layer; sequentially growing a u-GaN layer and a layer selected from the group consisting of an Al.sub.xGa.sub.1-xN layer, an In.sub.xAl.sub.1-xN layer and an In.sub.xAl.sub.yGa.sub.1-x-yN layer on the barrier layer; patterning the n-type or p-type GaN layer so as to form an electrode; forming the electrode along a pattern formed on the n-type or p-type GaN layer; and forming a sensing material layer on the layer selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer.

2. The method of claim 1, wherein the n-type or p-type GaN layer functions as a heater for generating heat due to current applied to the electrode.

3. The method of claim 1, wherein the barrier layer is formed in any one layer or a combination of layers selected from among an Al.sub.xGa.sub.1-xN layer, an In.sub.xAl.sub.1-xN layer and a high-resistance GaN layer.

4. The method of claim 1, wherein the forming the sensing material layer on the layer selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer comprises: forming a source electrode and a drain electrode on the layer selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer, and forming the sensing material layer on a portion of a region between the source electrode and the drain electrode.

5. The method of claim 1, wherein a GaN cap layer, an oxide film layer or a nitride film layer, having a thickness of 30 nm or less, is further formed in a single layer or multiple layers on the layer selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer.

6. The method of claim 1, wherein the forming the sensing material layer on the layer selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer comprises: forming an ohmic contact electrode on the layer selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer, and forming the sensing material layer for Schottky contact formation and an ohmic contact electrode connected thereto.

7. The method of claim 2, wherein heat generated by applying current to the n-type or p-type GaN layer is transferred to the sensing material layer.

8. The method of claim 1, wherein in the Al.sub.xGa.sub.1-xN layer, x satisfies 0<x1, and in the In.sub.xAl.sub.1-xN layer, x satisfies 0<x1.

9. The method of claim 1, wherein in the In.sub.xAl.sub.yGa.sub.1-x-yN layer, x and y satisfy 0<x1, 0<y1, 0<(x+y)1.

10. The method of claim 3, wherein in the Al.sub.xGa.sub.1-xN layer for forming the barrier layer, x satisfies 0<x1, and in the In.sub.xAl.sub.1-xN layer for forming the barrier layer, x satisfies 0<x1.

11. The method of claim 1, further comprising separating the substrate from the n-type or p-type GaN layer.

12. The method of claim 1, wherein the substrate is made of any one material selected from the group consisting of sapphire, AlN, diamond, BN, SiC, Si and GaN.

13. The method of claim 1, wherein the n-type or p-type GaN layer formed on the substrate is provided in a stripe shape, and a thickness, a width, a gap and electrical conductivity of the stripe shape are adjusted to thereby facilitate control of a reaction time (sensitivity) of the sensing material layer and a restoration time.

14. A gallium nitride-based sensor having a heater structure, comprising: a substrate; an n-type or p-type GaN layer grown on the substrate; a barrier layer grown on the n-type or p-type GaN layer; a u-GaN layer grown on the barrier layer; a layer selected from the group consisting of an Al.sub.xGa.sub.1-xN layer, an In.sub.xAl.sub.1-xN layer and an In.sub.xAl.sub.yGa.sub.1-x-yN layer grown on the u-GaN layer; an electrode formed along a pattern formed on the n-type or p-type GaN layer; and a sensing material layer formed on the layer selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer.

15. The gallium nitride-based sensor of claim 14, wherein the n-type or p-type GaN layer functions as a heater for generating heat due to current applied to the electrode.

16. The gallium nitride-based sensor of claim 14, wherein the barrier layer is formed in any one layer or a combination of layers selected from among an Al.sub.xGa.sub.1-xN layer, an In.sub.xAl.sub.1-xN layer and a high-resistance GaN layer.

17. The gallium nitride-based sensor of claim 14, further comprising a source electrode and a drain electrode formed on the layer selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer, the sensing material layer being formed on a portion of a region between the source electrode and the drain electrode.

18. The gallium nitride-based sensor of claim 14, further comprising a GaN cap layer, an oxide film layer or a nitride film layer, configured to have a thickness of 30 nm or less and formed in a single layer or multiple layers on the layer selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer.

19. The gallium nitride-based sensor of claim 14, further comprising: an ohmic contact electrode formed on the layer selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer; and an ohmic contact electrode connected to the sensing material layer for Schottky contact formation.

20. The gallium nitride-based sensor of claim 14, wherein in the Al.sub.xGa.sub.1-xN layer, x satisfies 0<x1, and in the In.sub.xAl.sub.1-xN layer, x satisfies 0<x1.

21. The gallium nitride-based sensor of claim 14, wherein in the In.sub.xAl.sub.yGa.sub.1-x-yN layer, x and y satisfy 0<x1, 0<y1, and 0<(x+y)1.

22. The gallium nitride-based sensor of claim 16, wherein in the Al.sub.xGa.sub.1-xN layer for forming the barrier layer, x satisfies 0<x1, and in the In.sub.xAl.sub.1-xN layer for forming the barrier layer, x satisfies 0<x1.

23. The gallium nitride-based sensor of claim 14, wherein heat generated by applying current to the n-type or p-type GaN layer is transferred to the sensing material layer.

24. The gallium nitride-based sensor of claim 14, wherein the substrate is made of any one material selected from the group consisting of sapphire, AlN, diamond, BN, SiC, Si and GaN.

25. The gallium nitride-based sensor of claim 14, wherein the n-type or p-type GaN layer formed on the substrate is provided in a stripe shape, and a thickness, a width, a gap and electrical conductivity of the stripe shape are adjusted to thereby facilitate control of a reaction time (sensitivity) of the sensing material layer and a restoration time.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIGS. 1A to 1C illustrate changes in sensitivity of a hydrogen sensor depending on the temperature;

(2) FIG. 2 illustrates the epitaxial thin film growth for manufacturing a gallium nitride-based sensor having a heater structure according to an embodiment of the present invention;

(3) FIG. 3 illustrates the MESA isolation on the epitaxial thin film for manufacturing a gallium nitride-based sensor having a heater structure according to an embodiment of the present invention;

(4) FIG. 4 illustrates the patterning for forming an electrode on the epitaxial thin film for manufacturing a gallium nitride-based sensor having a heater structure according to an embodiment of the present invention;

(5) FIG. 5 illustrates the electrode formation and the HEMT formation for manufacturing a gallium nitride-based sensor having a heater structure according to an embodiment of the present invention;

(6) FIG. 6 illustrates the electrode formation and the Schottky diode formation for manufacturing a gallium nitride-based sensor having a heater structure according to an embodiment of the present invention;

(7) FIG. 7 illustrates the electrode formation and the membrane formation for manufacturing a gallium nitride-based sensor having a heater structure according to an embodiment of the present invention; and

(8) FIG. 8 illustrates the manufacture of a gallium nitride-based sensor having a heater structure according to another embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

(9) Reference will now be made in detail to various embodiments of the present invention, specific examples of which are illustrated in the accompanying drawings and described below, since the embodiments of the present invention can be variously modified in many different forms. While the present invention will be described in conjunction with exemplary embodiments thereof, it is to be understood that the present description is not intended to limit the present invention to those exemplary embodiments. On the contrary, the present invention is intended to cover not only the exemplary embodiments, but also various alternatives, modifications, equivalents and other embodiments that may be included within the spirit and scope of the present invention as defined by the appended claims. Throughout the drawings, the same reference numerals refer to the same or like elements.

(10) It will be understood that, although the terms first, second, A, B, etc. may be used herein to describe various elements, these elements are not intended to be limited by these terms. These terms are only used to distinguish one element from another element. For instance, a first element discussed below could be termed a second element without departing from the teachings of the present invention. Similarly, the second element could also be termed the first element. As used herein, the term and/or may include any one of the listed items and any combination of one or more thereof.

(11) It will be understood that when an element is referred to as being coupled or connected to another element, it can be directly coupled or connected to the other element, or intervening elements may be present therebetween. In contrast, it should be understood that when an element is referred to as being directly coupled or directly connected to another element, there are no intervening elements present.

(12) The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present invention. As used herein, the singular forms are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms comprises, comprising, includes and/or including, when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

(13) Unless otherwise defined, all terms including technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and are not to be interpreted in an idealized or overly formal sense unless expressly so defined herein.

(14) Hereinafter, a detailed description will be given of preferred embodiments of the present invention with reference to the appended drawings.

(15) FIG. 2 illustrates the epitaxial thin film growth for manufacturing a gallium nitride-based sensor having a heater structure according to an embodiment of the present invention.

(16) With reference to FIG. 2, the epitaxial thin film for manufacturing a gallium nitride-based sensor having a heater structure according to an embodiment of the present invention may be configured to include a substrate 10, an n-type or p-type GaN layer 20 grown on the substrate, a GaN (Al.sub.xGa.sub.1-xN, In.sub.xAl.sub.1-xN, or high-resistance GaN)-based monolayered or multilayered barrier layer 30 grown on the n-type or p-type GaN layer, a u-GaN layer 40 grown on the barrier layer 30, and a layer 50 selected from the group consisting of an Al.sub.xGa.sub.1-xN layer, an In.sub.xAl.sub.1-xN layer and an In.sub.xAl.sub.yGa.sub.1-x-yN layer, grown on the u-GaN layer. Herein, the substrate 10 may be made of any one material selected from the group consisting of sapphire, AlN, diamond, BN, SiC, Si and GaN.

(17) In particular, the n-type or p-type GaN layer 20 may function as a heater for generating heat due to the current applied to an electrode. Specifically, since the barrier layer 30 is formed on the n-type or p-type GaN layer 20, when current is applied to the n-type or p-type GaN layer 20, the current flows in the transverse direction of the n-type or p-type GaN layer 20, thereby generating heat. Here, the barrier layer 30 may be provided in the form of any one layer or a combination of layers selected from among an Al.sub.xGa.sub.1-xN layer, an In.sub.xAl.sub.1-xN layer and a high-resistance GaN layer, and may function to prevent the current flowing in the n-type or p-type GaN layer 20 from flowing to the sensor structure on the barrier layer 30.

(18) The n-type or p-type GaN layer 20 having high conductivity is interposed between the substrate 10 and the barrier layer 30, whereby epitaxial thin film growth may be performed.

(19) FIG. 3 illustrates the MESA isolation on the epitaxial thin film for manufacturing a gallium nitride-based sensor having a heater structure according to an embodiment of the present invention, FIG. 4 illustrates the patterning for forming an electrode on the epitaxial thin film for manufacturing a gallium nitride-based sensor having a heater structure according to an embodiment of the present invention, and FIG. 5 illustrates the electrode formation and the HEMT formation for manufacturing a gallium nitride-based sensor having a heater structure according to an embodiment of the present invention.

(20) With reference to FIGS. 2 to 5, the manufacture of a gallium nitride-based HEMT sensor having a heater structure is described below.

(21) The epitaxial thin film as shown in FIG. 2, comprising the substrate 10, the n-type or p-type GaN layer 20, the barrier layer 30, the u-GaN layer 40 and the layer 50 selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer, may be grown, and such a thin film structure is made structurally stable by continuously growing the GaN-based layers.

(22) As necessary, a GaN cap layer, an oxide film layer or a nitride film layer may be further formed in a single layer or multiple layers on the layer selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer. The GaN cap layer, the oxide film layer or the nitride film layer preferably has a thickness of 30 nm or less. For example, the thickness of the GaN cap layer, the oxide film layer or the nitride film layer may be 10 nm30 nm.

(23) With reference to FIG. 3, the MESA isolation may be performed on the thin film structure of FIG. 2 for manufacturing the gallium nitride-based sensor having a heater structure. Specifically, some outer portions of the layer 50 selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer, the u-GaN layer 40, and the barrier layer 30 may be etched.

(24) With reference to FIG. 4, the patterning for forming an electrode may be performed on the epitaxial thin film for manufacturing the gallium nitride-based sensor having a heater structure. Specifically, the n-type or p-type GaN layer 20 may be patterned so as to contact the electrode.

(25) With reference to FIG. 5, the electrode 60 may be formed along the pattern formed on the n-type or p-type GaN layer 20.

(26) Also, a source electrode S and a drain electrode D may be formed on the layer 50 selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer, and a sensing material layer SM may be formed on a portion of the region between the source electrode S and the drain electrode D, thereby manufacturing a gallium nitride-based HEMT sensor. Here, the sensing material layer may be formed in a recess region P1 made by etching a portion of the layer 50 selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer.

(27) For example, the value x of the Al.sub.xGa.sub.1-xN layer may satisfy 0<x1, the value x of the In.sub.xAl.sub.1-xN layer may satisfy 0<x1, and the values x and y of the In.sub.xAl.sub.yGa.sub.1-x-yN layer may satisfy 0<x1, 0<y1, 0<(x+y)1.

(28) The value x of the Al.sub.xGa.sub.1-xN layer for forming the barrier layer 30 may satisfy 0<x1, and the value x of the In.sub.xAl.sub.1-xN layer for forming the barrier layer 30 may satisfy 0<x1.

(29) The n-type or p-type GaN layer 20 may function as a heater for generating heat due to current applied to the electrode 60. Thus, the gallium nitride-based HEMT sensor may be configured such that heat generated by applying current to the n-type or p-type GaN layer 20 may be rapidly transferred to the sensing material layer SM via the barrier layer, the u-GaN layer and the layer selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer.

(30) FIG. 6 illustrates the electrode formation and the Schottky diode formation for manufacturing the gallium nitride-based sensor having a heater structure according to an embodiment of the present invention.

(31) With reference to FIGS. 2 to 4 and FIG. 6, the manufacture of a gallium nitride-based Schottky diode sensor having a heater structure is described below.

(32) The epitaxial thin film as shown in FIG. 2, comprising the substrate 10, the n-type or p-type GaN layer 20, the barrier layer 30, the u-GaN layer 40 and the layer 50 selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer, may be grown, and such a thin film structure is made structurally stable by continuously growing the GaN-based layers.

(33) With reference to FIG. 3, the MESA isolation may be performed on the thin film structure of FIG. 2 for manufacturing the gallium nitride-based sensor having a heater structure. Specifically, some outer portions of the layer 50 selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer, the u-GaN layer 40, and the barrier layer 30 may be etched.

(34) With reference to FIG. 4, the patterning for forming an electrode may be performed on the epitaxial thin film for manufacturing the gallium nitride-based sensor having a heater structure. Specifically, the n-type or p-type GaN layer 20 may be patterned so as to contact the electrode.

(35) With reference to FIG. 6, the electrode 60 may be formed along the pattern formed on the n-type or p-type GaN layer 20.

(36) Also, an ohmic contact electrode 71 may be formed on the layer 50 selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer, and an ohmic contact electrode 72 that is connected to a sensing material layer (SBSM: Schottky Barrier Sensing Materials) for Schottky contact formation may be formed, thereby manufacturing a gallium nitride-based Schottky diode sensor.

(37) The n-type or p-type GaN layer 20 may function as a heater for generating heat due to current applied to the electrode 60. Thus, the gallium nitride-based Schottky diode sensor may be configured such that heat generated by applying current to the n-type or p-type GaN layer 20 may be rapidly transferred to the sensing material layer (SBSM) via the barrier layer, the u-GaN layer and the layer selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer.

(38) FIG. 7 illustrates the electrode formation and the membrane formation for manufacturing the gallium nitride-based sensor having a heater structure according to an embodiment of the present invention.

(39) With reference to FIGS. 2 to 4 and FIG. 7, the manufacture of a gallium nitride-based membrane sensor having a heater structure is described below.

(40) The epitaxial thin film as shown in FIG. 2, comprising the substrate 10, the n-type or p-type GaN layer 20, the barrier layer 30, the u-GaN layer 40 and the layer 50 selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer, may be grown, and such a thin film structure is made structurally stable by continuously growing the GaN-based layers.

(41) With reference to FIG. 3, the MESA isolation may be performed on the thin film structure of FIG. 2 for manufacturing the gallium nitride-based sensor having a heater structure. Specifically, some outer portions of the layer 50 selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer, the u-GaN layer 40, and the barrier layer 30 may be etched.

(42) With reference to FIG. 4, the patterning for forming an electrode may be carried out on the epitaxial thin film for manufacturing the gallium nitride-based sensor having a heater structure. Specifically, the n-type or p-type GaN layer 20 may be patterned so as to contact the electrode.

(43) With reference to FIG. 7, the electrode 60 may be formed along the pattern formed on the n-type or p-type GaN layer 20.

(44) Also, a source electrode S and a drain electrode D may be formed on the layer 50 selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer, a sensing material layer SM may be formed on a portion of the region between the source electrode S and the drain electrode D, and the substrate 10 may be separated from the n-type or p-type GaN layer 20 and then transferred to a third substrate, thereby manufacturing a gallium nitride-based membrane or flexible sensor. Here, the sensing material layer may be formed in a recess region P1 made by etching a portion of the layer 50 selected from the group consisting of the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer.

(45) FIG. 8 illustrates the manufacture of a gallium nitride-based sensor having a heater structure according to another embodiment of the present invention.

(46) With reference to FIG. 8, an insulator layer 80 may be formed in a stripe shape on a substrate 10.

(47) An n-type or p-type GaN layer 20 may be grown on the substrate 10 having the stripe-shaped insulator layer 80 formed thereon, and such an n-type or p-type GaN layer 20 may function as a heater. Specifically, the n-type or p-type GaN layer 20 may be grown in the stripe-shaped insulator layer 80 to thus have a stripe shape.

(48) Accordingly, a sensor structure may be formed on the insulator layer 80 and the n-type or p-type GaN layer 20, having the stripe shape, thereby manufacturing a gallium nitride-based sensor having a heater structure.

(49) The stripe-shaped n-type or p-type GaN layer 20 is adjusted in the thickness, width, gap, and electrical conductivity of the stripe shape, thus obtaining the gallium nitride-based sensor in which the temperature of the sensing material layer, power consumption, etc. may be easily controlled.

(50) In order to easily separate the substrate upon the formation of the stripe-shaped insulator layer 80, a GaN-based buffer layer may be interposed between the insulator layer 80 and the substrate.

(51) For example, the heater layer 20 may be patterned so as to have a planar structure or a one-dimensional linear structure.

(52) Furthermore, the substrate is separated from the n-type or p-type GaN layer 20, and may be transferred to the third substrate, and the third substrate may be made of Si, Ge, W, Cr, Ni, Cu or alloys thereof, amorphous AlN, amorphous SiC, graphite, nanocarbon, or a polymer material.

(53) The polymer material may include any one selected from the group consisting of polycarbonate (PC), polyethylene naphthalate (PEN), polynorbornene, polyacrylate, polyvinyl alcohol, polyimide, polyethylene terephthalate (PET), polyethersulfone (PES), polystyrene (PS), polypropylene (PP), polyethylene (PE), polyvinylchloride (PVC), polyamide (PA), polybutylene terephthalate (PBT), polymethyl methacrylate (PMMA) and polydimethylsiloxane (PDMS).

(54) As described hereinbefore, the gallium nitride-based sensor having a heater structure may be configured such that a process of growing an epitaxial thin film having high conductivity is included during the gallium nitride-based epitaxial thin film growth, and thus a heater structure may be embedded.

(55) Specifically, on a heterogeneous substrate (sapphire, AlN, diamond, BN, SiC, Si, etc.), an n-GaN (or p-GaN) epitaxial layer having high conductivity and a barrier layer usable as an insulator are grown, and then a HEMT structure, a Schottky diode structure, or the like is formed, thereby manufacturing the gallium nitride-based sensor having a heater structure.

(56) Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.