Ultra-flat optical device with high transmission efficiency
10324314 ยท 2019-06-18
Assignee
Inventors
- David A. Czaplewski (Naperville, IL, US)
- Daniel Lopez (Chicago, IL, US)
- Tapashree Roy (Lemont, IL, US)
Cpc classification
H01S3/08
ELECTRICITY
B82Y20/00
PERFORMING OPERATIONS; TRANSPORTING
G02F1/01
PHYSICS
G02B1/002
PHYSICS
H01S3/00
ELECTRICITY
H01S5/10
ELECTRICITY
G02F1/0102
PHYSICS
G02F1/0121
PHYSICS
G02F1/0063
PHYSICS
G02F1/0072
PHYSICS
International classification
G02B1/00
PHYSICS
H01S3/00
ELECTRICITY
G02F1/00
PHYSICS
G02F1/01
PHYSICS
H01S3/08
ELECTRICITY
Abstract
An optical device includes a nanostructured transparent dielectric film, which is a Huygens metasurface. The Huygens metasurface imparts a phase change to light propagating through or reflecting from the surface. The phase change can be achieved by means of a resonant interaction between light and the Huygens resonators, resulting in a controllable phase change of 0 to 2 with approximately 100% light transmission characterized by a below 0.1 dielectric loss tangent of delta and with the height of the resonators less than the wavelength of light. In one embodiment, the metasurface includes titanium dioxide, but many materials or stacks of different materials may be used. The optical device is functional throughout the visible spectrum between 380 and 700 nm. The nanostructured transparent dielectric film includes a plurality of Huygens resonators. The phase and the amplitude of the nanostructured transparent dielectric film are modulated by arranging the plurality of Huygens resonators such that certain properties, including the radius and height of each Huygens resonator, as well as the gap between two adjacent Huygens resonators, are controlled to optimize the performance of the optical device within the visible spectrum.
Claims
1. An optical device comprising: a substrate transparent to light in visible wavelength spectrum of 400 nm to 700 nm; and a plurality of Huygens resonators on the substrate, each of the plurality of the Huygens resonators having a gap g between adjacent Huygens resonators of the plurality of the Huygens resonators, each Huygens resonator comprised of a dielectric material with a defined height h in the range of 10 nm to 400 nm, and each Huygens resonator having a radius r in the range of 10 nm and 400 nm, wherein the plurality of Huygens resonators form a Huygens metasurface having a dielectric loss value less than 0.1 tangent of delta for light having a wavelength between 400 nm and 700 nm.
2. The optical device of claim 1, wherein each of the plurality of Huygens resonators is substantially a right circular cylinder or substantially a right elliptical cylinder.
3. The optical device of claim 1, wherein the plurality of Huygens resonators comprises a first resonator and a second resonator positioned such that the gap g between the first resonator and the second resonator is in the range of 10 nm to 400 nm.
4. The optical device of claim 1, wherein a refractive index of the plurality of Huygens resonators is in the range of 1.5 to 20.
5. The optical device of claim 1, wherein overall transmission efficiency is greater than 0%.
6. The optical device of claim 1, wherein each of the plurality of the Huygens resonators comprises titanium dioxide.
7. The optical device of claim 1, wherein each of the plurality of the Huygens resonators comprises gallium phosphide.
8. The optical device of claim 1 coupled with a MEMS device such that a resulting arrangement is configured to control light passing through the optical device and achieve the dielectric loss value less than 0.1 tangent of delta.
9. The optical device of claim 1, wherein the optical device is a first optical device coupled to a second optical device, the second optical device comprising a second plurality of Huygens resonators forming a second Huygens metasurface; and wherein the first optical device and the second optical device are movably arranged relative to one another and configured to control phase of the light passing through the first optical device and the second optical device such that the first optical device and the second optical device together have a second dielectric loss value less than 0.1 tangent of delta for light having the wavelength between 400 nm and 700 nm.
10. A resonator that is a Huygens source for a dielectric optical device functional at wavelengths between 400 nm and 700 nm, wherein the resonator is substantially cylindrical and comprises a low-loss material.
11. The resonator of claim 10, wherein the low dielectric loss material is titanium dioxide.
12. The resonator of claim 10, wherein the low dielectric loss material is gallium phosphide.
13. The resonator of claim 10, the resonator having a radius in the range of 10 nm and 400 nm.
14. The resonator of claim 13, the resonator having a height not greater than four times the radius.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The disclosure will become more fully understood from the following detailed description, taken in conjunction with the accompanying figures, in which:
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DETAILED DESCRIPTION
(10) Before turning to the figures, which illustrate the exemplary embodiments in detail, it should be understood that the present application is not limited to the details or methodology set forth in the description or illustrated in the figures. It should also be understood that the terminology is for the purpose of description only and should not be regarded as limiting.
(11) The present disclosure relates to an optical device based on nanostructured transparent dielectric films, or Huygens metasurfaces, to replace conventional bulky elements of an optical lens. Advantageously, the Huygens metasurfaces of the optical device are functional throughout the visible spectrum. The visible spectrum includes wavelengths of visible light ranging from roughly 400 nm to roughly 700 nm. The device of the present disclosure is designed to operate across the blue (wavelength 380-495 nm; frequency 606-789 THz; photon energy 2.5-3.26 eV), green (wavelength 495-590 nm; frequency 508-606 THz; photon energy 2.1-2.5 eV) and red (wavelength 590-700 nm; frequency 428-508 THz; photon energy 1.77-2.1 eV) spectrum. These spectra may intersect.
(12) The optical device includes an arrangement of nanostructures into a Huygens metasurface comprised of a dielectric material. In one embodiment, an optical device with Huygens metasurfaces is capable of bending light over a range of 400 nm to 550 nm (where the height h2 of a Huygens resonator included in the metasurface is 115 nm) or 480 nm to 620 nm (where the height h3 of a Huygens resonator included in the metasurface is 135 nm) or 532 nm to 700 nm (where the height h4 of a Huygens resonator included in the metasurface is 155 nm). This enables the Huygens metasurface of the optical device to come to a focal point to act as a lens without a significant loss of intensity transmitted through the metasurface.
(13) Suitable dielectric materials for manufacture of the optical device are low-loss materials, meaning that they are comparatively less prone to the dissipation of electromagnetic energy than higher-loss materials, such as silicon, as shown in
(14) The Huygens resonators of the present disclosure have low aspect ratios such that the height of any given resonator is at most equal to twice the diameter of that resonator. Advantageously, these low-aspect ratio nanostructures allow for greater off-axis illumination of the structures without a shadowing effect from the adjacent nanostructure. The close proximity of the structures allows for coupling of light between the individual elements of the Huygens metasurface allowing for full 2 phase change independent of the polarization. This makes the nanostructures of the optical device of the present disclosure suitable for generic (unpolarized) lens applications. In some embodiments, the optical device provides a spatially distributed phase modulation of transmitted and reflected light with up to 100% transmission of incident light. In some embodiments, the optical device provides intensity modulation in addition to the phase modulation.
(15) According to an example embodiment, the low-aspect ratio nanostructures of the optical device are manufactured using a process that is highly compatible with large-throughput semiconductor technologies, such as a complementary metal-oxide-semiconductor (CMOS) fabrication using projection lithography and stamp processes. These processes include those presently explored for the creation of magnetic memory devices such as hard drives. In one embodiment, as part of the manufacturing process, the shape of the Huygens metasurface is transferred into a resist layer on the surface of the film and then, using an appropriate hard mask, such as aluminum oxide or silicon dioxide, the pattern is etched into the titanium dioxide layer, creating the metasurface.
(16) Advantageously, it therefore becomes feasible to develop metadevices using the low aspect ratio nanostructures of the optical devicefor example, an ultra-flat high-efficiency lens. These metadevices can replace conventional bulky glass lenses used in optical systems. The compatibility of the optical device fabrication process with current semiconductor technologies makes large-scale manufacturing of such flat metadevices possible. Furthermore, the optical device is suitable for use in microscopes, telescopes, cameras, spectrometers, and other similar devices. Importantly, the optical device of the present disclosure enables miniaturization of such systems. Planarization (arranging on a flat surface) of lenses and other optical elements results in smaller, lighter and even smarter optical systems. Additionally, the low aspect ratio of the nanostructures of the optical device makes it a strong and sustainable candidate for integration with flexible substrates, such as stretchable membranes.
(17) In some embodiments, the optical device of the present disclosure is integrated with MEMS devices. These flat lenses can be integrated onto MEMS devices because they are fabricated using semiconductor fabrication processes. In some embodiments, the flat lenses are integrated onto MEMS devices, integrated circuits (IC) and/or light sources, which streamlines the fabrication of optical systems (e.g., cameras, projectors, etc.) In certain embodiments, the flat lenses are monolithically integrated. Integration with MEMS devices provides additional mechanical degrees of freedom to flat devices, leading to ultra-compact, low power consumption, fast-acting optical systemsfor example, a beam scanner with a footprint of one inch. Additionally, using MEMS to move two phase changing flat metasurfaces relative to each other enables novel applications in optical device design and implementation.
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(19) As shown on the plot 100, the horizontal axis, x, shows the visible wavelength spectrum, , in the range of 400 to 700 nm. The spectrum affects both the refractive index values and the dielectric loss values of silicon and titanium dioxide. The first vertical axis, y.sub.1, shows the refractive index n. The second vertical axis, y.sub.2, shows the dielectric loss factor. The white circles and arrows (102, 104, and 106) show which of the lines a, b, c, and d are plotted with respect to which axes.
(20) As shown, line a represents the refractive index of silicon and is plotted on the first vertical axis, y1. Line b represents the refractive index of titanium dioxide and is plotted on the first vertical axis, y1. Line c represents the loss of silicon and is plotted with respect to the second vertical axis, y2. Line d represents the loss of titanium dioxide and is plotted with respect to the second vertical axis, y2.
(21) As shown, at the wavelength of approximately 460 nm, which is on the lower end of the visible spectrum, the refractive index n of titanium dioxide is approximately 2.7 and the refractive index n of silicon is considerably higher, at approximately 4.6. Additionally, the dielectric loss factor value of titanium dioxide is approximately 0.01 and the dielectric loss factor value of silicon is considerably higher, at approximately 0.125.
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(23) As shown, the optical element 200 includes a Huygens metasurfacethat is, the optical element 200 includes a plurality of Huygens resonators 202 (Huygens sources), such as a first Huygens resonator 202a and a second Huygens resonator 202b. Huygens resonators 202 are sub-wavelength dielectric particles for modulating the amplitude and phase of the optical element 200. In some embodiments, the Huygens resonator is positioned on a suitable substrate, such as a transparent substrate like glass, silicon dioxide, quartz, or aluminum oxide. In some embodiments, the Huygens resonator 202 includes a high dielectric material, such as titanium dioxide, gallium phosphide or a combination thereof. In some embodiments, a Huygens resonator 202 consists substantially of a high dielectric material, such as titanium dioxide, gallium phosphide or a combination thereof.
(24) Other suitable materials may be used in certain embodiments. One criterion for selecting the appropriate material is a refractive index of the material that is larger than the refractive index of the suitable substrate (typically >1.5). Another consideration is that the material must support an electric and magnetic resonance, and the magnitude of those resonances must be approximately equal for the desired wavelength of operation for a given thickness of the material.
(25) As shown, the Huygens resonator 202 has a horizontal cross-sectional area 204. In some embodiments, the horizontal cross-sectional area 204 of the Huygens resonator 202 approximates a circle. In some embodiments, the horizontal cross-sectional area 204 of the Huygens resonator 202 approximates an oval. In some embodiments, the horizontal cross-sectional area 204 of the Huygens resonator 202 approximates an ellipse.
(26) Advantageously, the shape of the Huygens resonator 202 allows the Huygens resonator 202 to enable spectral separation of the electric and magnetic Mie resonances by, for example, changing the aspect ratio of the element 200. In some embodiments, the shape of the Huygens resonator 202 is approximated by a right circular cylinder. In some embodiments, the shape of the Huygens resonator 202 is approximated by a right elliptical cylinder. In some embodiments, the Huygens resonator 202 is cylindrical and has substantially straight and parallel sides. In some embodiments, the cylindrical walls of the Huygens resonator 202 do not form 90-degree angles with the top and bottom surfaces, thus making a conic section. In a certain embodiment, the shape of the Huygens resonator 202 is approximated by a tall cone with its top cut off so that the bottom and top surfaces, which define two horizontal cross-sectional areas 204, are parallel, but the side walls are slightly slanted compared with a cylinder.
(27) In some embodiments, the first Huygens resonator 202a and the second Huygens resonator 202b forming the optical element 200 are arranged in a two-dimensional square lattice. In some embodiments, the Huygens resonators are arranged in a hexagonal lattice.
(28) As shown, Huygens resonators 202 (e.g., the first Huygens resonator 202a and the second Huygens resonator 202b) are characterized by the following performance parameters: radius r, height h, and gap g. The combination of radius r, height h, and gap g of the first Huygens resonator 202a determines the parameter space for functional titanium dioxide-based Huygens metasurfaces, as discussed, for example, in reference to
(29) The radius r of the first Huygens resonator 202a is the distance between the center point 210 of the first horizontal cross-sectional areas 204a and the line defining the circumference of the substantially circular first horizontal cross-sectional area 204a. As shown in
(30) The gap g between the first Huygens resonator 202a and the second Huygens resonator 202b is the distance between their adjacent sides 206a and 206b. In embodiments where the first Huygens resonator 202a and the second Huygens resonator 202b are substantially cylindrical, the gap g is defined as the smallest distance between: (i) a first line of the plurality of vertical lines connecting the line defining the circumference of the first horizontal cross-sectional area 204a and the base 208 at a 90-degree angle for the first Huygens resonator 202a and (ii) a second line of the plurality of vertical lines connecting the circumference of the second horizontal cross-sectional area 204b and the base 208 at a 90-degree angle for the second Huygens resonator 202b, where the first Huygens resonator 202a and the second Huygens resonator 202b are adjacent to each other. In some embodiments (not shown), the gap g is defined as the distance between the center points 210 of the horizontal cross-sectional areas 204a and 204b of two adjacent Huygens resonators 202, each cross-section taken at an approximately equal distance from the base 208. As shown in
(31) The height h of the first Huygens resonator 202a is approximated by the length of the shortest vertical line in a plurality of vertical lines connecting the circumference of the first horizontal cross-sectional area 204a and the base 208 at a 90-degree angle. In some embodiments, the height h is 135 nm. However, as illustrated in
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(33) As shown on the plot 300, the second vertical axis, y.sub.2, shows the amplitude as a function of the radius r, shown on the abscissa, and the gap g, shown on the ordinate (the first vertical axis y.sub.1). As shown, the radius r, defined in reference to
(34) The circle in the center of the figure demonstrates the Huygens point, defined as the maximum transmission through the metasurface for a given height, for various radii r and gaps g. As shown, in the embodiment of
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(36) As shown, the modulated waveform is a beam of light transmitted in the visible spectrum at the fixed wavelength of 480 nm, and the modulated property is its phase. On the plot 400, the scale bar on the right hand side of the image, y.sub.2, shows the phase as a function of the values of the plot. A phase of is blue, a phase of + is red and a phase of zero is yellow/green. The radius r, as defined in reference to
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(42) As shown in
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(44) As shown in
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(48) Referring to
(49) The left images (810, 840, and 870 of
(50) As utilized herein, the terms approximately, about, substantially, and similar terms are intended to have a broad meaning in harmony with the common and accepted usage by those of ordinary skill in the art to which the subject matter of this disclosure pertains. It should be understood by those of skill in the art who review this disclosure that these terms are intended to allow a description of certain features described and claimed without restricting the scope of these features to the precise numerical ranges provided. Accordingly, these terms should be interpreted as indicating that insubstantial or inconsequential modifications or alterations of the subject matter described and claimed are considered to be within the scope of the invention as recited in the appended claims.
(51) References herein to the positions of elements (i.e. top, bottom, above, below, on, etc.) are merely used to describe the orientation of various elements in the figures. It should be noted that the orientation of various elements may differ according to other exemplary embodiments, and that such variations are intended to be encompassed by the present disclosure.
(52) With respect to the use of substantially any plural and/or singular terms herein, those having skill in the art can translate from the plural to the singular and/or from the singular to the plural as is appropriate to the context and/or application. The various singular/plural permutations may be expressly set forth herein for the sake of clarity.