Method for manufacturing gas detector by MEMS process

Abstract

A method for manufacturing a gas detector by a micro-electrical-mechanical systems (MEMS) process. The method includes providing a MEMS wafer including a plurality of mutually adjacent units; forming a gas sensing material layer on the MEMS wafer; bonding a structure reinforcing layer and the MEMS wafer through anode bonding; providing an adhesive tape; performing a cutting process to form a gas detection unit; and adhering the gas detection unit on a substrate by the adhesive tape to form a gas detector. The structure reinforcing layer is capable of enhancing the strength of a device and preventing edge collapsing, and hence enhancing the overall yield rate and reducing costs.

Claims

1. A method for manufacturing a gas detector by a micro-electrical-mechanical systems (MEMS) process, comprising: S1: providing a MEMS wafer, the MEMS wafer comprising a plurality of mutually adjacent units, each of the plurality of units comprising a top portion, a side block portion extending from an edge of the top portion, and a bottom chamber formed by the top portion and the side block portion in a surrounding manner, the side block portions of the plurality of units mutually connected; S2: forming a gas sensing material layer on one side of the MEMS wafer opposing to the bottom chamber; S3: bonding a structure reinforcing layer with the MEMS wafer through anode bonding in a negative-pressure environment, wherein the structure reinforcing layer covers the bottom chambers, and is made of at least one selected from a group consisting of glass and borosilicate glass; S4: providing an adhesive tape on one side of the structure reinforcing layer opposing to the MEMS wafer; S5: performing a cutting process along connecting positions of the side block portions of the plurality of units to form a plurality of gas detection units each comprising the bottom chamber; and S6: adhering one of the plurality of gas detection units to a substrate by the adhesive tape to form a gas detector.

2. The method for manufacturing a gas detector by a MEMS process of claim 1, wherein a thickness of the structure reinforcing layer is between 0.2 mm and 1 mm.

3. The method for manufacturing a gas detector by a MEMS process of claim 1, wherein step S6 further comprises: S6A: using a suction device to suck one of the plurality of gas detection units from one side of the MEMS wafer and correspondingly moving the gas detection unit to the substrate; and S6B: adhering the gas detection unit on the substrate by the adhesive tape to form the gas detector.

4. A method for manufacturing a multi-gas detector by a micro-electrical-mechanical systems (MEMS) process, comprising: P1: providing a MEMS wafer, the MEMS wafer comprising a plurality of mutually adjacent detection modules, each of the plurality of detection modules comprising a plurality of units, each of the plurality of units comprising a top portion, a side block portion extending from an edge of the top portion, and a bottom chamber formed by the top portion and the side block portion in a surrounding manner, the side block portions of the plurality of units mutually connected; P2: forming a gas sensing material layer on one side of the MEMS wafer opposing to the bottom chamber, the gas sensing material layer comprising a plurality of types of gas sensing materials respectively formed on the plurality of units; P3: bonding a structure reinforcing layer with the MEMS wafer through anode bonding in a negative-pressure environment, wherein the structure reinforcing layer covers the bottom chambers, and is made of at least one selected from a group consisting of glass and borosilicate glass; P4: providing an adhesive tape on one side of the structure reinforcing layer opposing to the MEMS wafer; P5: performing a cutting process along connecting positions of the plurality of detection modules, and simultaneously on the structure reinforcing layer and the adhesive tape to form a plurality of multi-gas detection units; and P6: adhering one of the plurality of multi-gas detection units to a substrate by the adhesive tape to form a multi-gas detector.

5. The method for manufacturing a multi-gas detector by a MEMS process of claim 4, wherein a thickness of the structure reinforcing layer is between 0.2 mm and 1 mm.

6. The method for manufacturing a multi-gas detector by a MEMS process of claim 4, wherein step P6 further comprises: P6A: using a suction device to suck one of the plurality of multi-gas detection units from one side of the MEMS wafer and correspondingly moving the multi-gas detection unit to the substrate; and P6B: adhering the multi-gas detection unit on the substrate by the adhesive tape to form the multi-gas detector.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a flowchart of a method according to a first embodiment of the present invention;

(2) FIG. 2A to FIG. 2F are partial section views of a manufacturing process of a method according to the first embodiment of the present invention;

(3) FIG. 3 is a flowchart of a method according to a second embodiment of the present invention;

(4) FIG. 4A to FIG. 4G are partial section views of a manufacturing process of a method according to the second embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

(5) FIG. 1 is a flowchart and FIG. 2A, FIG. 2B, FIG. 2C, FIG. 2D, FIG. 2E and FIG. 2F are partial section views of a manufacturing process of a method according to a first embodiment of the present invention. The method includes following steps.

(6) In step S1, as shown in FIG. 2A, a micro-electro-mechanical systems (MEMS) wafer 10 is provided. The MEMS wafer 10 includes a plurality of mutually adjacent units 11. Each of the plurality of units 11 includes a top portion 111, a side block portion 112 and a bottom chamber 113. The side block portion 112 extends from an edge of the top portion 111, and the bottom chamber 113 is formed by the top portion 111 and the side block portion 112 in a surrounding manner. The plurality of units 11 are mutually connected via the side block portions 112 to form the MEMS wafer 10. In this embodiment, the MEMS wafer 10 is made of silicon, and the bottom chamber 113 is made through etching.

(7) In step S2, as shown in FIG. 2B, a gas sensing material layer is formed on one side of the MEMS wafer 10 opposing to the bottom chamber 113.

(8) In step S3, again referring to FIG. 2B, a structure reinforcing layer 20 is bonded with the MEMS wafer 10 through anode bonding, wherein the structure reinforcing layer 20 covers the bottom chambers 113. To reduce heat loss, in this embodiment, anode bonding is performed in a negative-pressure environment, thus reducing air in the bottom chamber 113 and effectively preventing air convection and heat transmission to keep a heat source focused. The structure reinforcing layer 20 is made of at least one of glass and borosilicate glass, and has a thickness between 0.2 mm and 1 mm. Anode bonding is capable of alleviating damages caused by heating upon the MEMS wafer 10, and requires no adhesive, achieving high bonding levelness between the structure reinforcing layer 20 and the MEMS wafer 10. In a preferred embodiment of the present invention, the structure reinforcing layer 20 is made of BOROFLOAT 33 (BF33) glass, and the MEMS wafer 10 is made of silicon.

(9) In step S4, as shown in FIG. 2C, an adhesive tape 30 is provided on one side of the structure reinforcing layer 20 opposing to the MEMS wafer 10. The adhesive tape 30 may be a die attach film (DAF) tape or a dicing tape. Further, the adhesive tape 30 may further include an adhesion layer 31 adjacent to the structure reinforcing layer 20, and a protection layer 32 opposing to the structure reinforcing layer 20. The protection layer 32 is for protecting the adhesiveness of the adhesion layer 31 and preventing dust from attaching thereon.

(10) In step S5, as shown in FIG. 2D, a cutting process is performed along connecting positions of the side block portions 112 of the units 11, and simultaneously on the structure reinforcing layer 20 and the adhesive tape 30 to form a plurality of gas detection units 41. Each of the plurality of gas detection units 41 includes one bottom chamber 113. In this embodiment, the cutting process is performed through a laser (not shown) on the MEMS wafer 10, the structure reinforcing layer 20 and the adhesive tape 30. In an embodiment, the laser incidents from one side of the MEMS wafer 10 away from the structure reinforcing layer 20 to perform the cutting process. By replacing a conventional processing method with the laser, neither static electricity nor shearing effect is produced, thus preventing damages as well as possible residual internal stress of the MEMS wafer 10 and the structure reinforcing layer 20. The laser is capable of instantaneously completing the cutting process, involves an extremely small thermal affected area, and ensures high precision processing. Further, no cooling liquid is needed for laser processing, such that cleaning issues and pollution caused by waste materials can be reduced. With the structure reinforcing layer 20 provided, the strength of the overall device is enhanced, preventing edge collapsing during the cutting process and enhancing the yield rate as well as reducing costs.

(11) Further, the adhesive tape 30 is capable of reliably binding the structure reinforcing layer 20 to prevent the scattering of the structure reinforcing layer 20 after the cutting process. Further, the protection layer 32 of the adhesive tape 30 remains intact as the laser is system-controlled.

(12) In step S6, as shown in FIG. 2E and FIG. 2F, one of the plurality of gas detection units 41 is adhered to a substrate 50 by the adhesive tape 30 to form a gas detector 61. Step S6 further includes following steps.

(13) In step S6A, a suction device 70 is used to suck one of the plurality of gas detection units 41 from the side of the MEMS wafer 10. Meanwhile, a pushing device 80 is used to push the gas detection unit 41 from the side of the adhesive tape 30, so as to facilitate the suction device 70 to suck the gas detection unit 41 and to correspondingly move the gas detection unit 41 to the substrate 50.

(14) In step S6B, the gas detection unit 41 is placed on the substrate 50, and is adhered to the substrate 50 via the adhesion layer 31 of the adhesive tape 30 to form the gas detector 61.

(15) FIG. 3 is a flowchart and FIG. 4A, FIG. 4B, FIG. 4C, FIG. 4D, FIG. 4E, FIG. 4F, and FIG. 4G are partial section views of a manufacturing process of a method according to a second embodiment of the present invention. The method includes following steps.

(16) In step P1, referring to FIG. 4A, a MEMS wafer 10 is provided. The MEMS wafer 10 includes a plurality of mutually adjacent detection modules 10a each including a plurality of units 11. Each of the plurality of units 11 includes a top portion 111, a side block portion 112 and a bottom chamber 113. The side block portion 112 extends from an edge of the top portion 111, and the bottom chamber 113 is formed by the top portion 111 and the side block portion 112 in a surrounding manner. The side block portions 112 of the plurality of units 11 are mutually connected. In this embodiment, the MEMS wafer 10 is made of silicon, and the bottom chamber 113 is manufactured through etching.

(17) In step P2, referring to FIG. 4B, a gas sensing material layer 90 is formed on one side of the MEMS wafer 10 opposing to the bottom chamber 113. The gas sensing material layer 90 includes a plurality of types of gas sensing materials 91, which are respectively formed on different units 11 to sense different gases. In this embodiment, four different types of gas sensing materials 91 are given as an example.

(18) In step P3, referring to FIG. 4C, a structure reinforcing layer 20 and the MEMS wafer 10 are bonded through anode bonding. The structure reinforcing layer 20 covers the bottom chamber 113. The using of anode bonding alleviates damages caused by heating on the MEMS wafer 10, and provides high bonding levelness compared to conventional adhesives. Further, anode bonding performed in a negative-pressure environment reduces air in the bottom chamber 113, and effectively prevents air convection and heat transmission to keep a heat source focused. The structure reinforcing layer 20 may be made of at least one of glass and borosilicate glass, and has a thickness between 0.2 mm and 1 mm. In a preferred embodiment of the present invention, the structure reinforcing layer 20 is made of BF33 glass, and the MEMS wafer 10 is made of silicon.

(19) In step P4, referring to FIG. 4D, an adhesive tape 30 is provided on one side of the structure reinforcing layer 20 opposing to the MEMS wafer 10. The adhesive tape 30 may be a die attach film (DAF) tape or a dicing tape. Further, the adhesive tape 30 may further include an adhesion layer 31 adjacent to the structure reinforcing layer 20, and a protection layer 32 opposing to the structure reinforcing layer 20. The protection layer 32 is for protecting the adhesiveness of the adhesion layer 31.

(20) In step P5, referring to FIG. 4E, a cutting process is performed along connecting positions of the plurality of detection modules 10a, and simultaneously on the structure reinforcing layer 20 and the adhesive tape 30 to form a plurality of multi-gas detection units 42. With the structure reinforcing layer 20 provided, the strength of the overall device is enhanced, preventing edge collapsing during the cutting process and enhancing the yield rate as well as reducing costs. Because the plurality of units 11 of each of the plurality of detection modules 10a are provided with the different types of gas sensing materials 91, the plurality of multi-gas detection units 42 each including the plurality of types of gas sensing materials 91 can be obtained by one cutting process. Compared to a manufacturing process in which a single MEMS wafer 10 provided with only a single gas sensing material 91 needs to be provided in a plural quantity and then combined, the present invention reduces production costs as well as production time, and at the same time reduces the inventory of wafers.

(21) In this embodiment, the cutting process is performed through laser (not shown) on the MEMS wafer 10, the structure reinforcing layer 20 and the adhesive tape 30. In an embodiment, the laser incidents from one side of the MEMS wafer 10 away from the structure reinforcing layer 20 to perform the cutting process. Advantages of performing cutting through laser are previously described, and shall be omitted herein.

(22) Further, the adhesive tape 30 is capable of reliably binding the structure reinforcing layer 20 to prevent the plurality of multi-gas detection units 42 from scattering after the cutting process. Further, the laser, through system control, does not cut off the protection layer 32 of the adhesive tape 30.

(23) In step P6, referring to FIG. 4F and FIG. 4Q one of the plurality of multi-gas detection units 42 is adhered to a substrate 50 by the adhesive tape 30 to form a multi-gas detector 62. Because the plurality of units 11 of each of the plurality of detection modules 10a are mutually connected, adhesion precision is enhanced compared to a conventional solution of individually adhering the units 11. Step P6 further includes following steps.

(24) In step P6A, a suction device 70 is used to suck one of the plurality of multi-gas detection units 42 from the side of the MEMS wafer 10. Meanwhile, a pushing device 80 is used to push the multi-gas detection unit 42 from the side of the adhesive tape 30, so as to facilitate the suction device 70 to suck the multi-gas detection unit 42 and to correspondingly move the multi-gas detection unit 42 to the substrate 50.

(25) In step P6B, the multi-gas detection unit 42 is placed on the substrate 50, and is adhered via the adhesion layer 31 of the adhesive tape 30 to the substrate 50 to form the multi-gas detector 62. Using adhesive tape 30, issues of overfilling adhesive caused by a common liquid adhesive or obliqueness of the MEMS wafer 10 are eliminated.