Method of processing wafer

Abstract

The invention relates to a method of processing a wafer, having on one side a device area with a plurality of devices partitioned by a plurality of division lines and a peripheral marginal area having no devices and being formed around the device area, wherein the device area is formed with a plurality of protrusions protruding from a plane surface of the wafer. The method comprises attaching a protective film, for covering the devices on the wafer, to the one side of the wafer, wherein the protective film is adhered to at least a part of the one side of the wafer with an adhesive, and providing a carrier having a curable resin applied to a front surface thereof. The method further comprises attaching the one side of the wafer, having the protective film attached thereto, to the front surface of the carrier, so that the protrusions protruding from the plane surface of the wafer are embedded in the curable resin and a back surface of the carrier opposite to the front surface thereof is substantially parallel to the side of the wafer being opposite to the one side, and grinding the side of the wafer being opposite to the one side for adjusting the wafer thickness.

Claims

1. A method of processing a wafer, having on one side a device area with a plurality of devices partitioned by a plurality of division lines and a peripheral marginal area having no devices and being formed around the device area, wherein the device area is formed with a plurality of protrusions protruding from a plane surface of the wafer and the protrusions define an uneven surface topography, the method comprising: attaching a solid flexible protective film to the one side of the wafer, so as to closely follow at least upper portions of contours of the protrusions, wherein the solid flexible protective film is expandable and is adhered with an adhesive, the solid flexible protective film being expanded when being attached to the one side of the wafer so as to follow the uneven surface topography; providing a carrier having a curable resin applied to a front surface thereof; attaching the one side of the wafer, having the solid flexible protective film attached thereto, to the front surface of the carrier, so that the protrusions protruding from the plane surface of the wafer are embedded in the curable resin and a back surface of the carrier opposite to the front surface thereof is substantially parallel to the side of the wafer being opposite to the one side; and grinding the side of the wafer being opposite to the one side for adjusting the wafer thickness.

2. The method according to claim 1, further comprising cutting the wafer along the division lines.

3. The method according to claim 1, further comprising removing the carrier with the curable resin applied thereto and the solid flexible protective film from the wafer.

4. The method according to claim 3, wherein the cutting of the wafer is performed after removing the carrier with the curable resin applied thereto and the solid flexible protective film from the wafer.

5. The method according to claim 2, wherein the cutting of the wafer is performed in a state in which the solid flexible protective film and the carrier are attached to the wafer.

6. The method according to claim 1, wherein the adhesive is provided over an entire contact area of the one side of the wafer and the solid flexible protective film.

7. The method according to claim 1, wherein the flexible protective film is expandable and the solid flexible protective film is expanded when being attached to the one side of the wafer, so as to follow the contours of the protrusions protruding from the plane surface of the wafer.

8. The method according to claim 1, wherein the curable resin is curable by an external stimulus, such as UV radiation, heat, an electric field and/or a chemical agent.

9. The method according to claim 8, further comprising applying the external stimulus to the curable resin so as to cure the resin, before grinding the side of the wafer being opposite to the one side.

10. The method according to claim 1, further comprising cutting off a portion of the carrier with the curable resin applied thereto which laterally extends beyond a circumference of the wafer, before grinding the side of the wafer being opposite to the one side (1).

11. The method according to claim 1, wherein the carrier is made of a rigid material, such as PET and/or silicon and/or glass and/or SUS.

12. The method according to claim 1, wherein the protective film has a thickness in the range of 5 to 200 m.

13. The method of claim 1 wherein the solid flexible protective layer covers the devices and closely follows the entire contours of the protrusions.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) Hereinafter, non-limiting examples of the invention are explained with reference to the drawings, in which:

(2) FIG. 1 is a cross-sectional view showing a wafer to be processed by the method of the present invention;

(3) FIG. 2 is a cross-sectional view illustrating a first step of a method of processing a wafer according to a first embodiment of the present invention;

(4) FIG. 3 is a perspective view illustrating the first step of the method of processing a wafer according to the first embodiment of the present invention;

(5) FIG. 4 is a cross-sectional view showing the outcome of the first step of the method of processing a wafer according to the first embodiment of the present invention;

(6) FIG. 5 is an enlarged view of the left-hand side of FIG. 4;

(7) FIG. 6 is a cross-sectional view illustrating a second step of the method of processing a wafer according to the first embodiment of the present invention;

(8) FIG. 7 is a cross-sectional view illustrating a third step of the method of processing a wafer according to the first embodiment of the present invention;

(9) FIG. 8 is a cross-sectional view illustrating a fourth step of the method of processing a wafer according to the first embodiment of the present invention;

(10) FIG. 9 is a cross-sectional view illustrating a fifth step of the method of processing a wafer according to the first embodiment of the present invention;

(11) FIG. 10 is a cross-sectional view illustrating a sixth step of the method of processing a wafer according to the first embodiment of the present invention;

(12) FIG. 11 is a cross-sectional view illustrating a seventh step of the method of processing a wafer according to the first embodiment of the present invention;

(13) FIG. 12 is a perspective view showing the outcome of the seventh step of the method of processing a wafer according to the first embodiment of the present invention;

(14) FIG. 13 is a cross-sectional view illustrating an eighth step of the method of processing a wafer according to the first embodiment of the present invention;

(15) FIG. 14 is a cross-sectional view illustrating a sixth step of a method of processing a wafer according to a second embodiment of the present invention; and

(16) FIG. 15 is a cross-sectional view illustrating a seventh step of the method of processing a wafer according to the second embodiment of the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

(17) Preferred embodiments of the present invention will now be described with reference to the accompanying drawings. The preferred embodiments relate to methods for processing a wafer W.

(18) The wafer W can be, for example, a MEMS wafer having MEMS devices formed on a front side surface thereof, which is called a pattern side 1 in the following description. However, the wafer W is not limited to a MEMS wafer, but may also be a CMOS wafer having CMOS devices, preferably as solid-state imaging devices, formed on the pattern side 1 thereof or a wafer with other types of devices on the pattern side 1.

(19) The wafer W may be made of a semiconductor, e.g., silicon. Such a silicon wafer W can include devices, such as ICs (integrated circuits) and LSIs (large scale integrations), on a silicon substrate. Alternatively, the wafer may be an optical device wafer configured by forming optical devices, such as LEDs (light emitting diodes), on an inorganic material substrate of, for example, ceramic, glass or sapphire. The wafer W is not limited to this and can be formed in any other way. Furthermore, also a combination of the above described exemplary wafer designs is possible.

(20) The wafer W can have a thickness before grinding in the m range, preferably in the range of 625 to 925 m.

(21) The wafer W preferably exhibits a circular shape. The wafer W is provided with a plurality of crossing division lines 11 (see FIG. 3), called streets, formed on the pattern side 1 thereof, thereby partitioning the wafer W into a plurality of rectangular regions where devices, such as those described previously, are respectively formed. These devices are formed in a device area 2 of the wafer W. In the case of a circular wafer W, this device area 2 is preferably circular and arranged concentrically with the outer circumference of the wafer W.

(22) The device area 2 is surrounded by an annular peripheral marginal area 3, as is schematically shown in FIGS. 1 to 3. In this peripheral marginal area 3, no devices are formed. The peripheral marginal area 3 is preferably arranged concentrically to the device area 2 and/or the outer circumference of the wafer W. The radial extension of the peripheral marginal area 3 can be in the mm range and preferably ranges from 1 to 3 mm.

(23) The device area 2 is formed with a plurality of protrusions 14 protruding from a plane surface of the wafer W, as is schematically shown, for example, in FIGS. 1 and 2. The protrusions 14 may be, for example, bumps for establishing an electrical contact with the devices of the device area 2 in the separated dies. The height of the protrusions 14 in the thickness direction of the wafer W may be in the range of 70 to 200 m.

(24) In the following, a method of processing a wafer W according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 13.

(25) FIG. 1 shows a cross-sectional view of the wafer W to be processed by the method according to the first embodiment of the present invention. FIGS. 2 and 3 illustrate a first step of the processing method according to this first embodiment. In this first step, a protective film 4, for covering the devices on the wafer W, is attached to the pattern side 1 of the wafer W, as is indicated by an arrow in FIG. 2.

(26) The protective film 4 preferably has the same shape as the wafer W, i.e., a circular shape in the present embodiment, and is concentrically attached thereto. The diameter of the protective film. 4 is approximately the same as that of the wafer W, as is schematically shown in FIGS. 2 and 3.

(27) The protective film 4 covers the devices formed in the device area 2, including the protrusions 14, thus protecting the devices against damage or contamination. Further, the protective film 4 acts as an additional cushion in a subsequent grinding step, as will be detailed later.

(28) The protective film 4 is adhered to the pattern side 1 of the wafer W with an adhesive (not shown). The adhesive is provided over an entire contact area of the pattern side 1 of the wafer W and the protective film 4. In particular, the adhesive is provided over an entire surface of the protective film 4 which is in contact with the pattern side 1 of the wafer W.

(29) The adhesive may be curable by an external stimulus, such as heat, UV radiation, an electric field and/or a chemical agent. In this way, the protective film 4 can be particularly easily removed from the wafer W after processing.

(30) In particular, the adhesive may be an acrylic resin or an epoxy resin. A preferred example of a UV curable-type resin for the adhesive is, e.g., urethane acrylate oligomer. Further, the adhesive may be, for example, a water soluble resin.

(31) The protective film 4 may have a thickness in the range of 5 to 100 m, e.g., 80 m. The protective film 4 may be made of a polymer material, such as PVC or EVA.

(32) The protective film 4 is pliable and extendable to approximately three times its original diameter.

(33) For example, the step of attaching the protective film 4 to the pattern side 1 of the wafer W may be performed in a vacuum chamber, e.g., by using a vacuum laminator, as has been detailed above.

(34) FIG. 1 schematically illustrates the outcome of the first step of the processing method according to the first embodiment of the present invention. FIG. 5 shows an enlarged view of the left-hand side of FIG. 4. In this first step, the protective film 4 is expanded to approximately three times its original diameter when being attached to the pattern side 1 of the wafer W, so as to closely follow the contours of the protrusions 14, as is schematically shown in FIGS. 4 and 5.

(35) FIG. 6 illustrates a second step of the method of processing a wafer according to the first embodiment of the present invention. In this second step, a carrier 7 having a curable resin 13 applied to a front surface 17 thereof is provided. The carrier 7 is preferably made of a rigid material, such as polyethylene terephthalate (PET), silicon, glass or SUS.

(36) Preferably, the carrier 7 has the same shape as the wafer W, i.e., a circular shape in the present embodiment, and is arranged concentrically thereto, as is illustrated in FIG. 6.

(37) The carrier 7 may, for example, have a thickness in the range of 500 to 1000 m.

(38) The curable resin 13 is curable by an external stimulus, such as UV radiation, heat, an electric field and/or a chemical agent. In particular, the curable resin 13 may be ResiFlat by DISCO Corporation or TEMPLOC by DENKA. The layer of curable resin 13 formed on the front surface 17 of the carrier 7 may have a height in the thickness direction of the carrier 7 of approximately 50 to 1000 m, preferably 200 to 1000 m.

(39) Further, in the second step of the processing method according to the first embodiment of the present invention, the pattern side 1 of the wafer K, having the protective film 4 attached thereto, is attached to the front surface 17 of the carrier 7, as is indicated by an arrow in FIG. 6, so that the protrusions 14 are embedded in the curable resin 13 and a back surface 16 of the carrier 7 opposite to the front surface 17 thereof is substantially parallel to the side of the wafer K being opposite to the pattern side 1, i.e., the back side 6 thereof (e.g., FIGS. 1 to 3). This substantially parallel alignment of the carrier back surface 18 and the wafer back side 6 is indicated by dashed arrows in FIG. 7.

(40) Specifically, the wafer K, having the protective film 4 attached thereto, and the carrier 7 with the curable resin 13 are pressed together by applying a parallel pressing force to the wafer back side 6 and the back surface 18 of the carrier 7, for example, in a mounting chamber, so as to reliably embed the protrusions 14 in the curable resin 13 and achieve the substantially parallel alignment, of carrier back surface 16 and wafer back side 6. Details of pressing equipment and pressing operations suitable for this purpose are described in JP 5320058 B2 and JP 5324212 B2 for the case of using ResiFlat by the DISCO Corporation as a resin.

(41) FIG. 7 illustrates a third step of the method according to the first embodiment of the present invention. In this third step, the wafer unit consisting of the wafer H, the protective film 4, the resin. 13 and the carrier 7 is placed on a chuck table 20 and the external stimulus is applied to the curable resin 13 so as to cure the resin 13.

(42) For example, for the case of a heat curable, e.g., thermosetting, resin 13, the resin 13 may be cured by heating in an oven. For the case of a UV curable resin. 13, the resin 13 is cured by the application of UV radiation, e.g., through the carrier 7, if a carrier material is used which is transparent to this type of radiation, such as PET or glass.

(43) Hence, the protrusions 14 are firmly held in the cured resin. 13 and the substantially parallel relative alignment of the carrier back surface 18 and the wafer back side 6 is reliably maintained.

(44) As is shown in FIG. 7, the wafer unit is arranged on the chuck table 20 so that the carrier back surface 18 is in contact with a top surface 21 of the chuck table 20. Although the chuck table 20 has been omitted in FIGS. 8 and 9, the same or a similar chuck table arrangement as shown in FIG. 7 is also used in the steps illustrated in these figures.

(45) FIG. 8 illustrates an optional fourth step of the processing method according to the first embodiment of the invention. In this fourth step, a portion 23 of the carrier 7 with the cured resin 13 applied thereto which laterally extends beyond the circumference of the wafer W is cut off, as is indicated by dashed lines in FIG. 8. The portion 23 may be cut off, for example, by mechanical cutting, e.g., using a blade or a saw, laser cutting or plasma cutting. Cutting off the portion 23 facilitates handling of the wafer unit in the subsequent processing steps.

(46) FIG. 9 illustrates the outcome of a fifth step of the processing method according to the first embodiment of the invention. In this fifth step, the back surface 18 of the carrier 7, which is a plane, flat surface, is placed on the top surface of a chuck table (not shown) which may be identical to the chuck table 20 in FIG. 7. Subsequently, the back side 6 of the wafer W is ground for adjusting the wafer thickness, e.g., to a value in the range of approximately 30 to 100 m. The thickness can be the final thickness of the dies 26 (see FIG. 13).

(47) This grinding of the back side 6 of the wafer W may be performed using a grinding apparatus (not shown). The grinding apparatus may comprise a spindle housing, a spindle rotatably accommodated in the spindle housing and a grinding wheel mounted to the lower end of the spindle. A plurality of abrasive members may be fixed to the lower surface of the grinding wheel, wherein each abrasive member may be formed from a diamond abrasive member configured by fixing diamond abrasive grains with a bond, such as a metal bond or a resin bond. The grinding wheel having the abrasive members is rotated at high speeds by driving the spindle, e.g., using a motor.

(48) In the grinding step, the chuck table holding the wafer unit and the grinding wheel of the grinding apparatus are rotated and the grinding wheel is lowered so as to bring the abrasive members of the grinding wheel into contact with the back side 6 of the wafer W, thereby grinding the back side 6.

(49) Since the plane back surface 18 of the carrier 7, which is placed on the top surface of the chuck table of the grinding apparatus, is substantially parallel to the back side 6 of the wafer W, the pressure applied to the wafer H by the grinding wheel during the grinding process is evenly and homogenously distributed over the wafer W. Hence, any risk of a pattern transfer or breakage of the wafer W can be minimised. Further, the substantially parallel alignment of the flat, even back surface 18 of the carrier 7 and the back side 6 of the wafer W allows for the grinding step to be carried out with a high degree of precision, thus achieving a particularly uniform and homogenous wafer thickness after grinding.

(50) The protective film 4 covers the devices formed in the device area 2 of the wafer, therefore protecting the devices from damage and contamination, e.g., by residues of the curable resin 13. Moreover, the protective film 4 functions as a cushion or buffer between the pattern side 1 and the resin 13, thus further contributing to the uniform and homogenous distribution of pressure during grinding. Therefore, a pattern transfer or breakage of the wafer W during the grinding process can be particularly reliably prevented.

(51) After the back side 6 of the wafer W has been ground, the wafer W is subjected to a sixth step of the processing method of the first embodiment, the outcome of which is illustrated in FIG. 10. In this sixth step, the wafer unit is placed on an adhesive pick-up tape 24 in such a way that the ground surface of the wafer W is in contact with the adhesive pick-up tape 24, as is shown in FIG. 10. A peripheral portion of the adhesive pick-up tape 24 is mounted on an annular frame 25. In this way, the wafer unit comprising the wafer W, the protective film 4, the cured resin 13 and the carrier 7 is securely held by the adhesive pick-up tape 24 and the annular frame 25.

(52) FIG. 11 illustrates a seventh step of the processing method according to the first embodiment. In this seventh step, the carrier 7, the cured resin 13 and the protective film 4 are removed from the wafer W.

(53) Specifically, as is indicated by an arrow in FIG. 11, in the present embodiment, the carrier 7 and the cured resin 13 are first removed together from the wafer W having applied thereto the protective film 4. The presence of the protective film 4 on the pattern side 1 of the wafer W facilitates removal of the carrier 7 and the cured resin 13.

(54) The resin 13 may be a resin that exhibits a degree of compressibility, elasticity and/or flexibility, e.g., a rubber-like behaviour, after curing, thus allowing for a particularly easy removal thereof from the wafer W. Alternatively or additionally, another external stimulus, such as hot water, may be applied to the cured resin 13 prior to removal thereof, in order to soften the cured resin 13 for further facilitating the removal process.

(55) Subsequently, after removal of the carrier 7 and the cured resin 13, the protective film 4 is removed from the pattern side 1 of the wafer W. In particular, if the adhesive provided over the entire surface of the protective film 4 which is in contact with the pattern side 1 of the wafer W is curable by an external stimulus, such as UV radiation, heat, an electric field and/or a chemical agent, the external stimulus is applied to the adhesive, so as to lower the adhesive force thereof. In this way, the protective film 4 can be removed from the wafer F in a particularly simple and reliable manner.

(56) The outcome of the seventh step of the present embodiment is schematically shown in FIG. 12. Specifically, FIG. 12 shows the wafer W attached to the annular frame 25 through the adhesive pick-up tape 24 and having the protective film 4, the cured resin 13 and the carrier 7 removed therefrom.

(57) FIG. 13 illustrates an eighth step of the processing method according to the first embodiment of the invention. In this eighth step, the wafer W is cut along the division lines 11 from the pattern side 1 thereof, as is indicated by dashed lines in FIG. 13. In this way, the dies 26 are fully separated from each other. Cutting the wafer W may be performed by mechanical cutting, e.g., using a blade or a saw, and/or cutting by laser and/or cutting by plasma.

(58) After the dies 26 have been completely separated from one another in the cutting step, they respectively adhere to the adhesive pick-up tape 24. The individual separated dies 26 can be picked-up from the adhesive pick-up tape 24 by a pick-up device (not shown). The spacing between the individual dies 26 can be increased by radially expanding or stretching the pick-up tape 24, e.g., by use of an expansion drum, in order to facilitate the pick-up process.

(59) In the following, a method of processing a wafer W according to a second embodiment of the present invention will be described with reference to FIGS. 14 and 15. The method of the second embodiment differs from the method of the first embodiment in the sixth and seventh method steps illustrated in FIGS. 14 and 15, respectively.

(60) Specifically, as the sixth step in the method of the second embodiment, cutting of the wafer W is performed in a state in which the protective film 4, the cured resin 13 and the carrier 7 are attached to the wafer W, as is indicated by dashed lines in FIG. 14.

(61) As is schematically shown in FIG. 14, this cutting process is performed from the ground back side surface of the wafer W. In this cutting process, the back surface 18 of the carrier 7 is placed on the top surface of a chuck table (not shown) which may be identical to the chuck table 20 shown in FIG. 7. Since the protrusions 14 are embedded in the cured resin 13 and the back surface 18 of the carrier 7 is supported by the top surface of the chuck table, the risk of any damage to the wafer W or the dies 26, such as breakage thereof, during cutting is minimised. The wafer W may be cut by mechanical cutting, e.g., using a blade or a saw, and/or cutting by laser and/or cutting by plasma.

(62) By cutting the wafer W in this way, the dies 26 are fully separated from each other, i.e., no longer connected to each other by the wafer W. However, in the state shown in FIG. 14, the dies 26 are firmly held together by the cured resin 13.

(63) In the seventh step of the processing method according to the second embodiment, the outcome of which is shown in FIG. 15, the wafer unit comprising the wafer W, the protective film 4, the cured resin 13 and the carrier 7 is placed on an adhesive pick-up tape 24 mounted on an annular frame 25. The wafer unit is placed on the adhesive pick-up tape 24 in such a way that the ground back side surface of the cut wafer W is in contact with the adhesive pick-up tape 24, as is shown in FIG. 15.

(64) Subsequently, the carrier 7, the cured resin 13 and the protective film 4 are removed from the wafer W substantially in the same manner as described above and illustrated in FIG. 11 for the processing method according to the first embodiment.

(65) After removal of the carrier 7, the cured resin 13 and the protective film 4 from the wafer W, the individual separated dies 26 can be picked up from the adhesive pick-up tape 24 by a pick-up device (not shown.). The spacing between the individual dies 26 can be increased by radially expanding or stretching the pick-up tape 24, e.g., by use of an expansion drum, in order to facilitate the pick-up process.