Method for treating etching solution

Abstract

A method for treating an etching solution in order to circulate and reuse an etching solution used in etching treatment of silicon includes (1) selectively removing multivalent ions having a valence of two or more, or (2) removing multivalent ions having a valence of two or more, 20-50% of alkali metal ions having a valence of one relative to a total amount of the alkali metal ions, and hydroxide ions, through a membrane separation unit comprising a nanofiltration membrane. A permeated solution of the membrane separation unit is circulated to the etching bath.

Claims

1. A method for treating an etching solution in order to circulate and reuse an etching solution used in etching treatment of silicon, comprising: supplying an unused etching solution containing NaOH to an etching bath; dipping a silicon wafer in the unused etching solution in the etching bath, thereby producing the etching solution used in the etching treatment of silicon; selectively removing multivalent ions having a valence of two or more through a membrane separation unit comprising a nanofiltration membrane and an ultrafiltration membrane which is installed in an upstream side of the nanofiltration membrane, thereby performing membrane separation treatment on the etching solution supplied from the etching bath; circulating a permeated solution of the membrane separation unit to the etching bath; adding dilution water to the permeated solution in an etching solution adjusting bath, thereby producing the unused etching solution; and replenishing the unused etching solution from the etching solution adjusting bath to the etching bath so that a solution level of the unused etching solution is kept at a predetermined level, wherein the nanofiltration membrane removes at least silicate ions SiO.sub.3.sup.2 and condensed silicic acid from the etching solution used in the etching treatment of silicon and obtains an alkaline etching solution.

2. The method according to claim 1, wherein the nanofiltration membrane is resistant to an alkali solution, is resistant to a temperature up to 70 C., and has a molecular weight cut off of 150 to 2000.

3. The method according to claim 1, wherein the unused etching solution further includes at least one of a surfactant and isopropyl alcohol.

4. The method according to claim 1, wherein the unused etching solution further contains organic substance.

5. The method according to claim 4, further comprising measuring a concentration of the NaOH and a concentration of the organic substance in the permeated solution supplied from the membrane separation unit; adding NaOH to the permeated solution so that a concentration of Na ion in the NaOH in the permeated solution measured is kept at a predetermined value; and adding organic substance to the permeated solution so that the concentration of the organic substance in the permeated solution measured is kept at another predetermined value, wherein the unused etching solution contains 1-1.5 mol/L of NaOH and 0.1-0.2 mol/L of the organic substance.

6. The method according to claim 5, wherein the dilution water is added to the permeated solution depending on the concentration of the NaOH and/or the concentration of the organic substance measured.

7. The method according to claim 5, further comprising measuring an electric conductivity, or the electric conductivity and the concentration of Na ion of the etching solution supplied from the etching bath or the permeated solution of the membrane separation unit, and controlling an amount of the NaOH or the organic substance added based on the electric conductivity, or the electric conductivity and the concentration of Na ion measured.

8. The method according to claim 5, further comprising outputting membrane exchange signals based on electric conductivities of the membrane separation unit before and after the membrane separation treatment or the concentration of the NaOH of the permeated solution.

9. The method according to claim 1, further comprising measuring a refractive index in the unused etching solution by a refractive index meter, wherein the dilution water is added to the etching solution adjusting bath when the refractive index measured exceeds a predetermined threshold to adjust a concentration of SiO.sub.2 in the etching solution adjusting bath.

10. The method according to claim 9, further comprising adding NaOH solution to the etching solution adjusting bath, wherein the concentration of the SiO.sub.2 in the etching solution adjusting bath is adjusted to 10000 mg/L, and a concentration of the NaOH is adjusted to 40000 mg/L.

11. The method according to claim 9, further comprising generating a signal from a control unit when the refractive index measured exceeds the predetermined threshold, thereby activating a warning generating unit and issuing an order to replace the nanofiltration membrane, sending all the etching solution used to a wastewater treatment process by bypassing the nanofiltration membrane and the ultrafiltration membrane, and switching an operation to adding a predetermined amount of the dilution water and a predetermined amount of the NaOH solution to the etching solution adjusting bath based on the signal.

12. A method for treating an etching solution in order to circulate and reuse an etching solution used in etching treatment of silicon, comprising: supplying an unused etching solution containing NaOH to an etching bath; dipping a silicon wafer in the unused etching solution in the etching bath, thereby producing the etching solution used in the etching treatment of silicon; selectively removing multivalent ions having a valence of two or more through a membrane separation unit comprising a nanofiltration membrane, thereby performing membrane separation treatment on the etching solution supplied from the etching bath; circulating a permeated solution of the membrane separation unit to the etching bath; adjusting a solution temperature (T1) of the etching solution supplied to the membrane separation unit to 10-70 C.; adding dilution water to the permeated solution in an etching solution adjusting bath, thereby producing the unused etching solution; and replenishing the unused etching solution from the etching solution adjusting bath to the etching bath so that a solution level of the unused etching solution is kept at a predetermined level, wherein the nanofiltration membrane removes at least silicate ions SiO.sub.3.sup.2 and condensed silicic acid from the etching solution used in the etching treatment of silicon and obtains an alkaline etching solution.

13. The method according to claim 12, further comprising performing heat exchange between a solution returning from the membrane separation unit to the etching bath and a solution flowing out of the etching bath for the membrane separation unit.

14. A method for treating an etching solution in order to circulate and reuse an etching solution used in etching treatment of silicon, comprising: supplying an unused etching solution containing NaOH to an etching bath; dipping a silicon wafer in the unused etching solution in the etching bath, thereby producing the etching solution used in the etching treatment of silicon; selectively removing multivalent ions having a valence of two or more through a membrane separation unit comprising a nanofiltration membrane, thereby performing membrane separation treatment on the etching solution supplied from the etching bath; circulating a permeated solution of the membrane separation unit to the etching bath; adjusting a solution temperature (T2) from the permeated solution of the membrane separation unit to 80 C.; adding dilution water to the permeated solution in an etching solution adjusting bath, thereby producing the unused etching solution; and replenishing the unused etching solution from the etching solution adjusting bath to the etching bath so that a solution level of the unused etching solution is kept at a predetermined level, wherein the nanofiltration membrane removes at least silicate ions SiO.sub.3.sup.2 and condensed silicic acid from the etching solution used in the etching treatment of silicon and obtains an alkaline etching solution.

15. The method according to claim 14, further comprising performing heat exchange between a solution returning from the membrane separation unit to the etching bath and a solution flowing out of the etching bath for the membrane separation unit.

16. A method for treating an etching solution in order to circulate and reuse an etching solution used in etching treatment of silicon, comprising: supplying an unused etching solution containing NaOH to an etching bath; dipping a silicon wafer in the unused etching solution in the etching bath, thereby producing the etching solution used in the etching treatment of silicon; removing multivalent ions having a valence of two or more, 20-50% of alkali metal ions having a valence of one relative to a total amount of the alkali metal ions, and hydroxide ions through a membrane separation unit comprising a nanofiltration membrane and an ultrafiltration membrane which is installed in an upstream side of the nanofiltration membrane, thereby performing membrane separation treatment on the etching solution supplied from the etching bath; circulating a permeated solution of the membrane separation unit to the etching bath; adding dilution water to the permeated solution in an etching solution adjusting bath, thereby producing the unused etching solution; and replenishing the unused etching solution from the etching solution adjusting bath to the etching bath so that a solution level of the unused etching solution is kept at a predetermined level, wherein the nanofiltration membrane removes at least silicate ions SiO.sub.3.sup.2 and condensed silicic acid from the etching solution used in the etching treatment of silicon and obtains an alkaline etching solution.

17. The method according to claim 16, wherein the unused etching solution further includes at least one of a surfactant and isopropyl alcohol.

18. The method according to claim 16, further comprising measuring a refractive index in the unused etching solution by a refractive index meter, wherein the dilution water is added to the etching solution adjusting bath when the refractive index measured exceeds a predetermined threshold to adjust a concentration of SiO.sub.2 in the etching solution adjusting bath.

19. The method according to claim 18, further comprising adding NaOH solution to the etching solution adjusting bath, wherein the concentration of the SiO.sub.2 in the etching solution adjusting bath is adjusted to 10000 mg/L, and a concentration of the NaOH is adjusted to 40000 mg/L.

20. The method according to claim 18, further comprising generating a signal from a control unit when the refractive index measured exceeds the predetermined threshold, thereby activating a warning generating unit and issuing an order to replace the nanofiltration membrane, sending all the etching solution used to a wastewater treatment process by bypassing the nanofiltration membrane and the ultrafiltration membrane, and switching an operation to adding a predetermined amount of the dilution water and a predetermined amount of the NaOH solution to the etching solution adjusting bath based on the signal.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1 is a flow diagram showing a framework of an apparatus for treating an etching solution according to an embodiment of the present invention.

(2) FIG. 2 is a flow diagram showing a framework of an apparatus for treating an etching solution according to an embodiment of the present invention.

(3) FIG. 3 is a flow diagram showing an example.

(4) FIG. 4 is a flow diagram showing a framework of an apparatus for treating an etching solution according to an embodiment.

(5) FIG. 5 is a flow diagram showing a framework of an apparatus for treating an etching solution according to an embodiment.

(6) FIG. 6 is a flow diagram showing a framework of an apparatus for treating an etching solution according to an embodiment of the present invention.

(7) FIG. 7 is a flow diagram showing a framework of an apparatus for treating an etching solution according to an embodiment.

(8) FIG. 8 is a flow diagram showing an example.

DESCRIPTION OF EMBODIMENTS

(9) Hereinafter, embodiments of the present invention are described in detail with reference to the drawings.

(10) FIG. 1 is a flow diagram of an etching apparatus provided with an apparatus 1 for treating an etching solution according to an embodiment of the present invention. An etching solution in an etching bath 2 is heated up to about 80 to 90 C. The etching solution in the etching bath 2 is circulated via circulating means 6, membrane separation means 3 and a return pipe 8.

(11) The etching solution contains about 0.05 to 2 mol/L, particularly 1 to 1.5 mol/L, of NaOH, and 0.01 mol/L or more, for example, 0.1 to 0.2 mol/L of an organic additive. The organic additive may be a surfactant such as caprylic acid, lauric acid and 4-propyl benzoate as well as isopropyl alcohol and such.

(12) Crystalline silicon wafers such as semiconductor wafers put in casings are dipped in the etching solution in the etching bath 2, and more than one silicon wafer is textured at a time. By the texturing treatment, silicon and dopants are eluted from the silicon wafers.

(13) The etching solution in the etching bath 2 is supplied to the membrane separation means 3 by a pump installed in the circulating means 6. The membrane separation means 3 separates silicon compounds, dopant ions or the like from the etching solution. In the embodiment, it is provided with an ultrafiltration membrane (hereinafter may be referred to as a UF membrane) module 4 and a nanofiltration membrane (hereinafter may be referred to as an NF membrane) module 5. A permeated solution which has permeated the UF membrane module 4 and the NF membrane module 5 is returned to the etching bath 2 through the return pipe 8. A separated solution (a concentrated solution) from the etching solution which does not permeate each of the UF membrane and the NF membrane is sent to a wastewater treatment process 7 and is treated therein.

(14) The UF membrane of the UF membrane module 4 has pores with larger membrane pore diameters than those of pores in the NF membrane. Fine particles in the solution, polymers formed by polymerized silicon components, and other polyion complexes such as dopants are removed by the UF membrane, which will reduce load on the NF membrane. However, the UF membrane is not essential and may be omitted in the present invention.

(15) The UF membrane of the UF membrane module 4 preferably has pores with diameters from 2 to 100 nm and a molecular weight out off of about 1,000 to 300,000. Preferred materials for the UF membrane are cellulose, acetate, polyacrylonitrile, polysulfone, polytetrafluoroethylene, polyether sulfone, polyvinylidene fluoride, and the like.

(16) As is well known, an NF membrane has pores with diameters between those of a UF membrane and those of an RO membrane, and carries electric charges in the surface material. An NH membrane which can remove multivalent ions having at least valences of two or more is selected. The NH membrane may selectively remove multivalent ions having a valence of two or more, or it may remove multivalent ions having a valence of two or more, alkali metal ions having a valence of one, and hydroxide ions.

(17) The NF membrane may remove multivalent ions having a valence of two or more, alkali metal ions having a valence of one, and hydroxide ions. The PP membrane preferably has a molecular weight cut off of about 150 to 2,000, particularly 200 to 1,000. When a target organic substance needs to permeate the NF membrane, an NF membrane having a molecular weight cut off greater than that of the organic substance may be selected.

(18) In the case where an NF membrane which selectively removes multivalent ions having a valence of two or more is used, multivalent ions such as phosphoric acid are removed from the etching solution. In this case, the NF permeated solution is alkaline with a pH of about 13 to 14, and contains silicate ions having a valence of one, for example, HSiO.sub.3.sup.. A part of silicon turns into bivalent ions (for example, SiO.sub.3.sup.2) under highly alkaline conditions of a pH of 13 or higher. Accordingly, by making the etching solution pH 13 or higher, SiO.sub.3.sup.2 and condensed bivalent silicate ions are removed from the etching solution.

(19) In the case where an NF membrane which removes alkali metal ions having a valence of one, for example, sodium ions and potassium ions, and hydroxide ions is used, the separated solution turns alkaline, and silicon is ionized, so that fouling of the NF membrane can be curbed. When 20 to 50%, preferably 30 to 40% of alkali metal ions having a valence of one, and hydroxide ions can be removed, alkalinity of the etching solution can be sustained while preventing fouling of the NF membrane.

(20) An apparatus 1A for treating etching solution shown in FIG. 2 is provided, to the return pipe 8 according to the apparatus 1 for treating etching solution shown in FIG. 1, with alkali concentration measuring means 9 for the Na and the like in the permeated solution supplied from the membrane separation means 3, TOC concentration measuring means 10 which measures the concentrations of organic substances such as surfactant, IPA and the like therein, alkalinity adding means 11 which adds alkalinity to the permeated solution depending on the alkali concentration in the permeated solution measured by the alkali concentration measuring means 9 and organic substance adding means 12 which adds an organic substance to the permeated solution depending on the organic substance concentration in the permeated solution measured by the measuring means 10. Detection signals from the measuring means 9 and 10 are received by the respective control units 13 and 14, and the adding means 11 and 12 are controlled by the control units 13 and 14, respectively.

(21) The alkali concentration may be measured using a refractive index, a viscosity meter, a pH meter, titration neutralization, and ultrasonic waves. The concentration of an organic additive may be measured using a TOC meter, infrared (TR) light, raman spectrometry, ultraviolet absorption, and visible light absorption.

(22) The alkaline and organic additive added to the etching solution by the adding means 11 and 12 are the same alkaline and organic additive in the etching solution in the etching bath 2.

(23) In an apparatus 1B for treating etching solution shown in FIG. 4, a solution returning to the etching bath 2 from the NF membrane module 5 is led into a NaOH concentration adjusting bath 20, and its NaOH concentration is detected by a NaOH concentration sensor 21. The detected NaOH concentration is transmitted to a NaOH adding unit 22, and a NaOH solution, for example, a 25% NaOH solution, is added to the returning solution so that its NaOH concentration in the adjusting bath 20 is equivalent to the NaOH concentration in the solution in the etching bath 2. The solution in the adjusting bath 20 is returned to the etching bath 2 by a pump 23.

(24) The solution in the etching bath 2 is supplied to the UF membrane module 4 via an intermediary bath 18. Other components of the framework are the same as those in FIG. 1, and components having the same numbers denote the same components.

(25) In the etching apparatuses shown in FIG. 1, FIG. 2 and FIG. 4, concentrated solution is discharged to the wastewater treatment process 7 from the membrane separation means. So, during operation, the etching bath 2 is replenished with a fresh etching solution so that the solution level in the etching bath 2 is kept at a constant level. The fresh etching solution is the same solution as the unused etching solution before starting the etching operation.

(26) The treatment method in the wastewater treatment process 7 may be neutralization, coagulation sedimentation, crystallization, and drying using a drier. The concentrated solution supplied from the membrane modules 4 and 5 is strongly alkaline, so it needs to be neutralized. In an apparatus for treating etching solution of the present invention, silicon components and the like contained in a highly concentrated alkali solution are separated by a membrane treatment, and a permeated solution is returned to an etching bath. So, compared to the conventional example (see Comparable Examples 1 and 2 to be later described) which supplies all of an etching solution in an etching apparatus to a wastewater treatment process when the etching solution is contaminated, the amount of wastewater is reduced, and the load on the wastewater treatment process 7 can be mitigated, for example, the amount of acid necessary for neutralization in the wastewater treatment process can be reduced.

(27) An apparatus 1C for treating etching solution shown in FIG. 5 is so constructed that the solution in the etching bath 2 is supplied to the UF membrane module 4 via the intermediary bath 18 in the apparatus 1A for treating etching solution shown in FIG. 2. The apparatus 1C for treating etching solution is further provided, to the return pipe 8, with an electric conductivity sensor 33 which measures the electric conductivity as an alkali concentration measuring means for Na and the like in the permeated solution supplied from the membrane separation means 3. A detection signal from the sensor 33 is received by the control unit 13. The control unit 13 controls the alkalinity adding means 11 depending on the detected values by the sensor 33 and the measured values obtained by the alkali concentration measuring means 9.

(28) In FIG. 5, electric conductivity sensors 30 and 31 are also installed in the etching bath 2 and the intermediary bath 18, respectively. In FIG. 5, a dilution water adding unit 34, which adds dilution water to the solution returning to the etching bath 2, is installed. In FIG. 5, a pipe 32, which returns portion of the concentrated solution supplied from the UF membrane module 4 and the NF membrane module 5 to the intermediary bath 18, is installed. Other components in FIG. 5 are the same as those in FIG. 2, and components having the same numbers denote the same components.

(29) In FIG. 5, the reason for measuring electric conductivity is as follows. Namely, when silicon dissolves in an alkali solution and silicate ion concentration rises, OH.sup. ions are consumed and the pH drops. The molar electric conductivity of OH.sup. ions at the time of infinite dilution is three to four times as high as that of other anions, so as the OH.sup. ions are consumed, the electric conductivity falls. Thus, electric conductivity may be one of the indices representing silicic acid elements in an alkali solution.

(30) When Na ion concentration in an alkali solution is known in advance, it is possible to calculate the presence or absence of silicate ions and their concentration in the solution merely from the electric conductivity of the solution. When Na ions can be detected by other means, the precision of the calculation can be enhanced.

(31) The spot where the electric conductivity is measured is not particularly designated, yet the etching bath, intermediary bath or permeated is preferred. In the etching bath, as the silicate ion concentration rises, the OH.sup. concentration drops and the electric conductivity decreases. Thus, it is preferred to control the electric conductivity at a constant value by supplying a new alkali solution and overflowing the etching solution. The waste etching solution that has overflowed is made to flow into the intermediary bath 18, and then is treated in the membrane separation means 3, and thus a purified alkali solution is obtained.

(32) As can be seen in FIG. 6 illustrated below, the operation pressure and operation ON/OFF of the membrane modules 4 and 5 may be appropriately controlled after calculating the alkali concentration and silicic acid concentration based on at least one of the detected results using a calculating unit (control unit 37).

(33) In FIG. 5, sensors are installed in the return pipe 8 which connects the membrane separation means 3 and the etching bath 2, and IPA solution, NaOH solution and dilution water are added to the return pipe 8. Meanwhile, in an apparatus 1D for treating etching solution 1D shown in FIG. 6, an etching solution adjusting bath 35 is installed somewhere along the return pipe 8, sensors such as TOC concentration measuring means 10, an electric conductivity meter 33, a refractive index meter 36 are installed in the adjusting bath 35, and IPA solution, NaOH solution and dilution water are added to the adjusting bath 35. Detection signals of the electric conductivity meter 33 and the refractive index meter 36 are received by a control unit 37, and by the control unit 37 are controlled alkalinity aiding means 11 and a dilution water adding unit 34. When a measured value of the refractive index meter 36 exceeds a threshold, a warning generator 38 gives out an NF membrane replacing warning, and the whole etching solution supplied from an intermediary bath 18 is moved to a wastewater treatment process 7 without passing through the membrane separation means 3. Concurrently, dilution water supplied from the dilution water adding unit 34 and NaOH solution supplied from the alkalinity adding means 11 are supplied to the etching bath 2 via the adjusting bath 35. In this manner, even if SiO.sub.2 leaks due to NF membrane deterioration, etching treatment can be carried out continuously.

(34) The apparatus for treating etching solution of the present invention may be provided with at least one of solution temperature adjusting means for adjusting the solution temperature (T.sub.1) of an etching solution supplied to the membrane separation means 3, and temperature adjusting means for adjusting the solution temperature (T.sub.2) of the permeated solution of the membrane separation means 3. Particularly the apparatus may be provided with both of the solution temperature adjusting means for adjusting the solution temperature (T.sub.1) of the etching solution supplied to the membrane separation means 3, and the solution temperature adjusting means for adjusting the solution temperature (T.sub.2) of the permeated solution of the membrane separation means, whereby heat exchange is conducted between the two solution temperature adjusting means installed upstream and downstream sides of the membrane separation means 3. When the solution temperature (T.sub.1) is adjusted by the solution temperature adjusting means, the removal rate of bivalent silicate ions is improved for the following reason.

(35) The removal rate of bivalent silicate ions is attributed to the temperature dependency of the dissociation equilibrium constant of water, and can be described using formula (1) derived thermodynamically.

(36) $\begin{array}{cc}{\left(\frac{\ln K}{T}\right)}_p=\frac{{}_r{H}^{}}{{\mathrm{RT}}^2}& \left(1\right)\end{array}$

(37) In formula (1), K represents the ion product of water, T represents the absolute temperature, R represents the gas constant and .sub.rH.sup.0 represents the standard enthalpy change of reaction. Suffix p in the left side term indicates equilibrium under constant pressure.

(38) As is obvious from formula (1) above, a rise in temperature causes the ion product of water K to decrease, so the pH of the solution falls and dissociation of water becomes less likely to occur. That is, the existing amount of bivalent silicate ions to be removed becomes small. So, in order to improve the removal efficiency of bivalent silicate ions, treatment performed at a low temperature is preferred. On the other hand, when the temperature of the solution is significantly low, water flux of an NF membrane drops. So, there is a tradeoff between the amount of bivalent silicate ions and the water flux. Thus, it is preferred that temperature settings and the number of NF membranes be decided according to the composition of the etching solution and such.

(39) Specifically, the solution temperature (T.sub.1) of the etching solution supplied to the membrane separation means 3 is preferably 10 to 70 C., and particularly 30 to 50 C. When a solution having a solution temperature (T.sub.1) of higher than 70 C. is treated by the membrane, the removal rate of bivalent silicate ions is reduced, and problems may occur in the membrane module. When a solution having a temperature of less than 10 C. is treated by the membrane, the membrane may consolidate depending on the operation pressure, and the water transport amount of the membrane may drop.

(40) In an apparatus 1E for treating an etching solution shown in FIG. 7, the solution from the etching bath 2 is fed to an NF membrane module 45 of the membrane separation means 3 via an intermediary bath 43, and returns a permeated solution to the etching bath 2 through a pipe 46 via a heat exchange unit 41. The concentrated solution of the NF membrane module 45 is returned to the intermediary bath 43 through a pipe 47 via a heat exchange unit 42. The heat exchange unit 42 is solution temperature adjusting means to adjust the solution temperature (T.sub.1) of the etching solution introduced into the intermediary bath 43, and the heat exchange unit 41 is solution temperature adjusting means to adjust the solution temperature (T.sub.1) of the permeated solution of the membrane separation means 3. Only one of the heat exchange units 41 and 42 may be installed, yet at least the heat exchange unit 41 is preferably installed. It is preferred that heat exchange is conducted by the heat exchange unit 41 between the solution of about 80 C. supplied from the etching bath 2 and the permeated solution of the membrane separation means 3. When the solution temperature (T.sub.1) is adjusted by such a heat exchange unit 41, membrane flux can be optimally adjusted.

(41) The heat exchange unit 42 is for keeping the water temperature in the intermediary bath 43, and conducts heat exchange between the concentrated solution (for example, of 50 C. or less) of the NF membrane module, and the high temperature solution supplied from the etching bath 2.

(42) When the molecular weight cut off of an NF membrane is relatively small, even if the temperature is high, the silica removal rate becomes high so that the temperature can be raised up to the tolerance level of the membrane and the flux can be set at its maximum. On the other hand, when the molecular weight cut off of an NF membrane is large, the silica removal rate drops as the solution temperature rises, so it is preferred to operate at a lower temperature. An NF membrane hawing a large molecular weight cut off has a relatively large flux, and the effects of operating at a low temperature is small.

(43) In the illustrated embodiment, only one NF membrane module 5 is installed, yet more than one NF membrane module may be installed in a series. In this manner, the removal rate of silicic acid from the etching solution can be enhanced. For example, when only one NF membrane hawing silicic acid removal rate of 50% is installed, the silicic acid removal rate is 50%, but when two of the same NF membrane module are installed in series, 75% of silicic acid can be removed altogether.

EXAMPLES

(44) The present invention is hereinafter described in greater detail with reference to examples and comparative examples, however the present invention is not limited to the following examples as long as it does not exceed its summary.

Comparative Example 1

(45) As is shown in FIG. 3, an apparatus for etching which simply circulates an etching solution in an etching bath 2 by circulating means 6 and a pipe 8 was used to conduct etching treatment of silicon wafers.

(46) The volume of the etching bath 2 was 8 m.sup.2, and to this bath was added unused etching solution comprising 54,600 mg/L NaOH solution and 11,700 mg/L IPA solution. The temperature of the etching solution was set at 85 C., and silicon wafers were dipped in the etching solution for about 30 minutes. Etching treatments were carried out continuously. To the etching bath 2 were timely replenished fresh etching solutions so that the solution level in the bath was kept at a constant level. By continuously conducting she etching treatments, silicon and dopants were eluted from the silicon wafers, and their concentrations in the etching solution gradually rose.

(47) Approximately 500 silicon wafers were treated, and the composition of the resulting etching solution is shown in Table 1. Consequently, all of the etching solution in the system including the etching solution in the etching bath 2 and that in the return pipe 8 was replaced by a fresh etching solution, and the etching treatments were again repeated.

(48) TABLE-US-00001 TABLE 1 Composition of the Contaminated Etching solution SiO.sub.2 22600 mg/L Na.sup.+ 31400 mg/L PO.sub.4.sup.3 21 mg/L TOC 11710 mg/L

(49) In COMPARATIVE EXAMPLE 1, replacement of all of the etching solution had to be carried out at a frequency of twice a day (i.e., once every 12 hours) and the amount of waste solution reached 15 m.sup.3 a day.

Example 1

(50) An apparatus shown in FIG. 1 was used as the apparatus for treating etching solution. The volume of the etching bath 2 was the same as that of COMPARATIVE EXAMPLE 1, and specifications and operation conditions of the UF membrane module 4 and NF membrane module 5 were as stated below.

(51) UF Membrane Module 4: Nitto Denko Corp., NTU-3306-K6R

(52) NF Membrane Module 5: NADIR Corp. (Germany), NPO30

(53) Amount of Water Introduced to UF Membrane Module 4: 58 L/min

(54) Solution temperature (T.sub.1) of introduced solution (permeated solution of NF membrane module 5 and solution supplied through a Chiller (not illustrated in FIG. 1) after heat exchange treatment) to UF Membrane Module 4: 20 C.

(55) Solution temperature (T.sub.2) of returned solution (solution supplied from the circulation means 6 and solution supplied through a heater (not illustrated in FIG. 1) after heat exchange treatment) to etching bath 2: 80 C.

(56) An etching solution in the etching bath 2 was the contaminated etching solution after being used in operation for 12 hours in COMPARATIVE EXAMPLE 1 above.

(57) That is, in she above-described COMPARATIVE EXAMPLE 1, all of the contaminated etching solution as shown in Table 1 was disposed of, whereas in EXAMPLE 1, operation was continued while the contaminated etching solution was being treated by membrane separation.

(58) Water recovery rates of the UF membrane module 4 and NF membrane module 5 were set at both 90%. Fresh etching solutions were timely replenished to the etching bath 2 so that the solution level in the etching bath 2 was kept at a constant level.

(59) Composition of the permeated solution of the NF membrane 5 after 12 hours elapsed since the beginning of the operation of EXAMPLE 1 is shown in Table 2 below. For reference, the composition of the raw water of the Example 1 which is the waste solution shown in Table 1 is also described in Table 2.

Example 2

(60) As the apparatus for treating etching solution, the apparatus as shown in FIG. 2 provided with alkaline (NaOH in the EXAMPLE) adding means and organic additive (IPA in the EXAMPLE) adding means was used. All other conditions for the etching treatment were the same as those in EXAMPLE 1.

(61) As alkali concentration measuring means 9, a pH meter was used. A NaOH solution (24%) was added with a chemical feeding pump so that the Na.sup.+ concentration after addition would be 31,400 mg/L.

(62) As IPA concentration measuring means 10, a TOC meter was used. An IPA solution (20%) was added to the return pipe 8 with a chemical feeding pump so that the IPA concentration after addition would be 11,700 mg/L.

(63) The composition of the etching solution (after 12 hours elapsed since the beginning of the operation) in the return pipe 8 downstream of the point where NaOH and IPA were added is shown in Table 2.

(64) TABLE-US-00002 TABLE 2 EXAMPLE 1 Raw Water (Removal Rate %) EXAMPLE 2 SiO.sub.2 (mg/L) 22600 9500 (58%) 6500 Na.sup.+ (mg/L) 31400 21200 (32%) 31400 PO.sub.4.sup.3 (mg/L) 21 9 (57%) 9 TOC (mg/L) 11710 10260 (12%) 11700
[Evaluation]

(65) As is shown in Table 2, EXAMPLE 2 and EXAMPLE 2 had lower values of SiO.sub.2 and PO.sub.4.sup.3 concentrations in the permeated solution than those in the raw water, whereby etching treatment was continuously conducted without replacing all of the etching solution.

(66) In EXAMPLE 1 and EXAMPLE 2, the amount of concentrated solution supplied from each of the membrane modules 4 and 5 to the waste etching solution treatment process was 8 m.sup.3 in sum total for a day. It was acknowledged that the amount of waste solution was significantly small compared to that in COMPARATIVE EXAMPLE 1.

(67) Detailed evaluation of each EXAMPLE is as follows.

(68) It is found that, in EXAMPLE 1, removal rates of SiO.sub.2 and PO.sub.4.sup.3, which are impurities, are high compared to that of Na.sup.+. It is also found that, by combining a UF membrane module and an NF membrane module, a flow which separates SiO.sub.2 and returns Na.sup.+ to the etching bath can be formulated. It is further found that the TOC value which shows the organic additive concentration, and which is important in forming the texture on the surface of silicon, hardly changes in the course of a membrane separation treatment, so that the organic additive can be reused.

(69) Moreover, it is found from the results of EXAMPLE 2 that, by installing concentration adjusting means, SiO.sub.2 and PO.sub.4.sup.3 can be separated, and concurrently concentrations of Na.sup.+ and organic substances can be maintained, so that the etching performance could be further stabilized.

(70) The SiO.sub.2 concentration in the raw water is high, so when it is continuously used without conducting membrane separation treatment, the etching rare of the silicon wafer drops, and the desired texture formation becomes difficult to obtain. Thus, it is necessary to discharge the raw water before the SiO.sub.2 concentration reaches about 20,000 to 25,000 mg/L, and to replace the etching solution.

(71) On the other hand, when the UF membrane module and the NF membrane module are combined as shown in EXAMPLE 1 and EXAMPLE 2 above, it is possible to separate SiO.sub.2 and PO.sub.4.sup.3 and to return most of the Na.sup.+ to the etching bath 2, so the amount of NaOH used can be reduced by half. In this manner, the life-span of an etching solution can be doubled, and the amount of acid used for neutralization can be curtailed because the amount of NaOH discharged to the wastewater treatment process can be reduced by half.

Comparative Example 2

(72) Etching treatment of silicon wafers using an etching apparatus shown in FIG. 8 was conducted. The volume of the etching bath 2 was 200 L, and to this bath was added an unused etching solution comprising 40,000 mg/L NaOH solution and 12,000 mg/L IPA solution. The temperature of the etching solution was set at 85 C., and silicon wafers were dipped in the etching solution for about 30 minutes. Etching treatments were carried out continuously. To the etching bath 2 was continuously added from the adding means 50 fresh etching solution in at a rate of 30 L/h so that the SiO.sub.2 concentration in the etching solution in the etching bath 2 mould be about 20,000 mg/L. By continuously conducting the etching treatments, silicon and dopants mere eluted, and their concentrations in the etching solution gradually rose.

(73) Approximately 500 silicon wafers were treated, and the composition of the resulting etching solution was as shown in Table 3. Consequently, all of the etching solution in the system was replaced by a fresh etching solution, and the etching treatments were again repeated.

(74) TABLE-US-00003 TABLE 3 SiO.sub.2 22,000 mg/L NaOH 39,500 mg/L PO.sub.4.sup.3 22 mg/L IPA 11,500 mg/L

(75) In COMPARATIVE EXAMPLE 2, the replacement of all of the etching solution had to be carried out twice a day (i.e., once every 12 hours) and the amount of waste solution reached 400 L a day. This was an amount of waste solution for one etching bath, so in a mass production plant where the number of etching baths would be large, the amount of waste solution could pile up.

Comparative Example 3

(76) In COMPARABLE EXAMPLE 2 above, as the SiO.sub.2 concentration rose, the etching rate dropped. In COMPARATIVE EXAMPLE 3, a new NaOH solution (40,000 mg/L) was constantly added at a rate of 60 L/h so that the SiO.sub.2 concentration was kept at about 10,000 mg/L in order to maintain a consistent etching rate.

(77) As a result, the etching rate was kept stable compared to COMPARABLE EXAMPLE 1, but the amount of waste solution produced for a day was 820 L which was about twice as ranch as that of COMPARABLE EXAMPLE 2, and the waste solution disposal cost was doubled.

Example 4

(78) The apparatus shown in FIG. 4 was used for treating etching solution. The volume of the etching bath 2 was the same as that of COMPARATIVE EXAMPLE 2, and specifications and operation conditions of the UF membrane module 4 and NF membrane module 5 are stated below.

(79) EXAMPLE 4 shows a result of a once-through treatment where the concentrated solution supplied from the membrane separation means 3 was not returned to the intermediary bath 18.

(80) UF Membrane Module 4: Nitto Denko Corp., NTU-3306-K6R

(81) NF Membrane Module 5: 2 8-inch NF Membrane of Molecular Weight Cut Off 300 installed in a Series

(82) Amount of water introduced to UF Membrane Module 4: 10 L/min

(83) Meter introduced to UF membrane module 4 was heat-exchanged with the permeated solution of NF membrane module 5 and than passed through a chiller (not illustrated in FIG. 4), and had a temperature of 50 C.

(84) The returning water to the etching bath 2 was heat-exchanged with the solution from the intermediary bath 18 and then heated by a heater (not illustrated in FIG. 4), and had a temperature of 80 C.

(85) The solution temperature in the intermediary bath 18 was 50 C.

(86) Held in the etching bath 2 was the etching solution which was in a state of being used for operation for 12 hours in COMPARATIVE EXAMPLE 2 above. The solution in the bath 2 in this state was started to be treated.

(87) That is, in COMPARATIVE EXAMPLE 2, all of the contaminated etching solution as shown in Table 3 was disposed of, whereas in EXAMPLE 4, operation was continued while the contaminated etching solution, was being treated by membrane separation.

(88) The water recovery rate of the UF membrane module 4 was set at 90%, that of NF membrane module 5 was set at 50%, and that when the membrane modules were combined was 45%. To the etching bath 2 were timely replenished fresh etching solutions so that the solution level in the etching bath 2 was kept at a constant level.

(89) Composition of permeated solution of the NF membrane 5 after 12 hours elapsed since the beginning of the operation of EXAMPLE 4 is shown in Table 1 below. For reference, the composition of the waste solution of COMPARABLE EXAMPLE 2 shown in Table 3 is entered under the column of waste etching solution raw water composition in Table 4. As is shown in Table 4, the removal rate of SiO.sub.2 was 90%, whereas the recovery rate of NaOH was 60%, and NaOH was selectively recovered.

(90) TABLE-US-00004 TABLE 4 EXAMPLE 4: Composition of Transported Waste Etching Solution Solution Raw (Figures in EXAMPLE 5: Water Parenthesis Solution (COMPARATIVE Represent Concentration EXAMPLE 2) Removal Rates) Etching Bath SiO.sub.2 (mg/L) 22,000 1,900 (90%) 9,500 NaOH (mg/L) 39,500 23,700 (40%) 40,000 PO.sub.4.sup.3 (mg/L) 22 9 (60%) 12 IPA (mg/L) 11,500 10,500 (9%) 12,000 Water Recovery 45% 72% Rate Chemical Once Every Once Every Once Every Replacement 12 Hours 48 Hours or 120 Hours or Frequency Less Less Waste Solution 1 0.55 0.2 (When Amount in COMPARATIVE EXAMPLE 2 was 1)

Example 5

(91) An etching solution was treated with the apparatus shown in FIG. 6. In EXAMPLE 5, by returning and circulating the concentrated solution of the UF membrane module 5, the water recovery rate was increased to 72% (water recovery rate of UF membrane module was 90%, and that of NF membrane module was 80%). The concentrated solution of the NF membrane module 5 was circulated to the intermediary bath, so the permeated solution having a further enhanced NaOH concentration was obtained. The brine of the UF membrane module was sent to the wastewater treatment process 7. Composition of the solution in the etching bath in EXAMPLE 5 is shown in Table 5.

(92) The apparatus for treating an etching solution has NaOH adding means and an IPA, as an organic additive, adding means at the etching solution adjusting tank as shown in FIG. 6.

(93) A NaOH solution (25 weight %) was added by adding means 11 composed of a chemical feeding pump so that the NaOH concentration in the bath 35 was 40,000 mg/L based on values detected by alkali concentration measuring means composed of a refractive index meter 36 and an electric conductivity meter (electromagnetic concentration meter (manufactured by Toa DKK)) 33.

(94) A certain amount of dilution water was added to the etching solution adjusting bath 35 by a dilution water adding unit 34 so that the SiO.sub.2 concentration in the etching bath 2 was 10,000 mg/L, and portion of the solution in the etching bath 2 was made to overflowed (not illustrated in FIG. 6, but the overflowed solution directly flowed from the etching bath to the wastewater treatment process). At this point, the amount of NaOH solution (25%) added by the chemical feeding pump was increased so that the NaOH concentration was 40,000 mg/L at the time the added dilution water was mixed. The permeated solution of the NF membrane module 5 was adjusted by adding NaOH and IPA, which were not sufficiently contained because 90% or more of the SiO.sub.2 concentration was removed, to the etching solution adjusting bath 35.

(95) The SiO.sub.2 concentration in the etching solution adjusting bath 35 was kept at a few level due to the removal of SiOH.sub.2 by the NF membrane. However, when the measured value of the refractive index meter 36 exceeded a threshold, the warning generating unit 38 was activated upon receiving a signal from the control unit 17 and gave out an NF membrane replacement order. Concurrently, the etching solution supplied from the intermediary bath 18 was not treated by the UF membrane module 4, but all was supplied to a pipe (not illustrated) leading to the wastewater treatment process. Concurrently, operation was switched to an operation of adding a fixed amount of dilution water and 25% NaOH solution upon reception of a signal from the control unit 17. In this manner, etching treatment could be continuously carried out even when SiO.sub.2 leaked due to NF membrane deterioration.

(96) Based on a detection signal of TOC concentration measuring means 10, an IPA solution (20%) was added by adding means 12 composed of a chemical feeding pump to the etching solution adjusting path 35 so that the IPA concentration was 12,000 mg/L.

(97) The composition of the etching solution which was sampled (at a time 12 hours after the beginning of operation) from the return pipe 8 upstream of the etching solution adjusting bath 35 is shown in Table 5.

(98) TABLE-US-00005 TABLE 5 Composition of Solution of EXAMPLE 5 Composition of Permeated of NF Concentration Composition of Membrane Module of Solution of the (Figure in Parenthesis Solution in Intermediary Represent Etching Bath 18 Removal Rates Bath 2 SiO.sub.2 (mg/L) 34,000 2,900 (92%) 9,500 NaOH (mg/L) 56,000 33,700 (40%) 40,000 PO.sub.4.sup.3 (mg/L) 30 9 (60%) 12 IPA (mg/L) 12,500 10,500 (9%) 12,000

(99) The present invention has been described in detail with reference to specific embodiments, and it is obvious to a person skilled in the art that various alterations are possible without deviating from the purpose and scope of the present invention.

(100) The present application is based on a Japanese Patent Application Publication No. 2009-086345 filed as of Mar. 31, 2009, and the entire contents of which are incorporated herein by reference.