Stacking integrated circuits containing serializer and deserializer blocks using through silicon via

Abstract

A die stack having a second die is stacked vertically on top of a first die. A first plurality of test pads is located along a first edge of the first die. A second plurality of test pads is located along a second edge of the first die. The first edge of the first die is parallel to the second edge of the first die. A third plurality of test pads is located along a first edge of the second die. A fourth plurality of test pads is located along a second edge of the second die. The first edge of the second die is parallel to the second edge of the second die. The first edge of the first die and the second edge of the first die are perpendicular to the first edge of the second die and the second edge of the second die.

Claims

1. A system comprising: a die stack, wherein the die stack comprises at least: a first die; a second die, wherein the second die is stacked vertically on top of the first die, one or more redistribution layer (RDL); one or more Though Silicon Via (TSV); a first plurality of pads, wherein the first plurality of pads is located along a first edge of the first die; a second plurality of pads, wherein the second plurality of pads is located along a second edge of the first die, and the first edge of the first die is parallel to the second edge of the first die; a third plurality of pads, wherein the third plurality of pads is located along a first edge of the second die; a fourth plurality of pads, wherein the fourth plurality of pads is located along a second edge of the second die, the first edge of the second die is parallel to the second edge of the second die, and the first edge of the first die and the second edge of the first die are perpendicular to the first edge of the second die and the second edge of the second die; and one or more Serializer/Deserializer (Ser/Des) circuit blocks, wherein at least one die of said die stack comprises said one or more Ser/Des circuit blocks, the first plurality of pads are a first plurality of test pads, the second plurality of pads are a second plurality of test pads, the third plurality of pads are a third plurality of test pads, and the fourth plurality of pads are a fourth plurality of test pads.

2. The system according to claim 1, wherein said one or more said redistribution layer provide at least one physical connection among said one or more Though Silicon Via on two adjacent dies of said die stack.

3. The system according to claim 1, wherein said one or more Though Silicon Via from each die of said die stack are aligned on the top of each other.

4. The system according to claim 1, wherein said one or more Though Silicon Via is used within the one or more Ser/Des circuit blocks.

5. The system according to claim 1, wherein said die stack is mounted on top of a substrate.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 shows an example of chip with wirebonded package.

(2) FIG. 2 shows an example of chip with Flip Chip package.

(3) FIG. 3 shows an example of stacked die packing of two chips of the same size using wirebond.

(4) FIG. 4 shows an example of stacked die packing of two chips with a separate SER/DES die in the same package using wirebond.

(5) FIG. 5 shows an example of Trough Silicon Via (TSV) on the SER/DES blocks of a chip placed at the peripheries of the chip.

(6) FIG. 6 shows three stacked chips connected to substrate via TSVs.

(7) FIG. 7 shows redistribution layer (Interposer) that is used to route and connected TSVs and Pads.

(8) FIG. 8 shows two chips with TSVs connected to each other through a redistribution layer (Interposer).

(9) FIG. 9 shows TSVs of one chip connected to the pads of another chip through a redistribution layer (Interposer).

(10) FIG. 10 shows the location of test pads at the very edge of dice, when they are stacked on each other.

(11) FIG. 11A is a side view of an interposer having formed therein a TSV, in accordance with one embodiment of the present invention.

(12) FIG. 11B is a side view of an interposer having disposed therein a passive component, in accordance with one embodiment of the present invention.

(13) FIG. 11C is a side view of an interposer having a multitude of solder balls disposed on its top surface, in accordance with one embodiment of the present invention.

(14) FIG. 11D is a side view of an interposer having an adhesive layer formed on its top surface, in accordance with one embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

(15) To create a more compact and space efficient integrated circuit, it is necessary to be able to stack multiple dice on top of each other. Two general methods are possible for interconnecting the stacked dice to each other and for connecting those dice to the pins or solder balls of the 3D chip package. One method is to use wirebond, meaning that to use wires to connect chips to each other or to the pins of the 3D package as shown in FIG. 3 and FIG. 4. The wirebond technique is not very useful for high speed SER/DES due to creation of inductance and capacitance.

(16) Another technique is to use Through Silicon Via (TSV) to connect multiple stacked dice to each other or to the external pins. FIG. 8 shows an example of TSVs (801, 803) of two dice (802, 804) connected to each other. While FIG. 9 shows the contact pads (901) of one die (902) is connected to the TSVs (903) of another die (904) using RDLs (906). FIG. 9 illustrates an interposer (substrate) (905). TSVs has so far been only used for lower speed integrated circuits. This patent extends the TSV technology for usage with high speed SER/DES circuits. Doing so would eliminate the need for wirebond and would create a more compact package with superior electrical and thermal characteristics.

(17) And, finally, to test dice which are stacked on each other, test pads need to be created for each die. The test pads must be located at the extreme periphery or edge of dice. FIG. 10 shows two dice (1001, 1003) are stacked on top of each other, They both have TSVs (1005) and the test pads (1002, 1004) are placed at the edge of these dice.

(18) In order to successfully use TSV for the SER/DES circuits a number of rules have to be followed. This patent provides the techniques for using TSV in high speed SER/DES block of chips that could be used for connecting the SER/DES circuit to external pins.

(19) The first technique is to have the SER/DES blocks that use TSV at one or more peripheries of the die. FIG. 5 is an example of such method in which four SER/DES blocks (501) are used at the four peripheries of the die (503) and the SER/DES blocks are equipped with TSVs (502) that can be used to pass through lower dice and get connected to external pins or other dice.

(20) The second technique is to try to limit the SER/DES blocks that use TSV to one or more peripheries of the die and rotate the upper and lower stacked dice by 90 degrees or have the SER/DES staggered so that the SER/DES blocks of those dice will not block each other. This method makes the TSV creation and routing in the interposer layer much easier.

(21) The third technique is to use a redistribution layer (RDL) or interposer when TSVs of the lower and upper die can't be aligned to each other. Redistribution layer (RDL) is used to route and connect TSV to contact pad. The trace routes can be of any shape, angle or material. There could be solder resist on the top of RDL and adhesive such as (BCB), etc. FIG. 6 shows an example in which the TSVs (602, 603, 604 and 605) of 3 stacked dice are aligned to each other and therefore no RDL is required. FIG. 6 illustrates three stacked chips connected to a substrate having a die (601) and an interposer (substrate) (606). While FIG. 7 shows an example, in which the TSVs of the two dice (706, 708) are not aligned to each other and therefore an RDL (707) is required between two dice (706, 708) to route the TSVs. The RDL may contain TSV, blind via, buried via, or any combination of via. The RDL may or may not contain plans, or passive elements such as capacitors. FIG. 8 shows another example of a RDL (806) that is used to connect the via (801) of the top die (802) to the via (803) of the bottom die (804). FIG. 8 illustrates an interposer (substrate) (805).

(22) FIG. 11A is a side view of interposer 707 shown as including a TSV 750, in accordance with one embodiment of the present invention. FIG. 11B is a sideview of interposer 707 shown as including a passive component, such as capacitor 752, in accordance with one embodiment of the present invention. FIG. 11C is a sideview of interposer 707 shown as including solder balls 754 on its top surface, in accordance with one embodiment of the present invention. FIG. 11D is a sideview of interposer 707 shown as including adhesive layer 756 on its top surface, in accordance with one embodiment of the present invention.

(23) The fourth technique is the method for aligning stacked dice. Dice can be aligned using fiducials of any type, such as cross, square, circle, +, , =, etc, or any text character. Fiducials can be used on the interposer and/or dice for the purpose of alignment. The interposer and dice can have one, two or as many Fiducials, as needed.

(24) The fifth technique is to create (deposit) contact pads on RDL to create a contact point for the other dice TSV. This pad can of any material, size or shape. A circular contact pad (704) is shown in FIG. 7 that resides in the RDL (707). The contact pad (704) is used to connect the TSV of the upper layer (708) to the trace (705) on the RDL and subsequently to the TSV of the lower die (702).

(25) The sixth technique is use tear drops for connecting traces on the RDL to TSVs for the purposes of reinforcement and stress reduction. FIG. 7 shows an example of a tear drop (709) on the TSV of the lower die (702).

(26) The seventh technique is mix wirebond and TSV in stacked chips. Wirebond could be used for low speed digital circuits, while TSV could be used for the high speed SER/DES circuits.

(27) The eight technique is to place the test pads for testing a die that uses TSV at the extreme periphery of the die.

(28) Any variations of the above are also intended to be covered by the application here.