Method for manufacturing bonded body and method for manufacturing power-module substrate

Abstract

A method for manufacturing a power-module substrate includes a lamination step of laminating a ceramic member and a copper member through an active metal material and a filler metal having a melting point of 710 C. or lower, and a heating treatment step of heating the ceramic member and the copper member laminated together.

Claims

1. A method for manufacturing a bonded body formed by bonding a ceramic member made of a ceramic member and a copper member made of copper or a copper alloy, the method comprising: a lamination step of laminating the ceramic member and the copper member through an active metal material and a filler metal having a melting point of 710 C. or lower; and a heating treatment step of heating the ceramic member and the copper member laminated together to bond the ceramic member and the copper member in a state of being pressurized in the lamination direction at 1 kgf/cm.sup.2 to 35 kgf/cm.sup.2, wherein the filler metal is a brazing filler metal, the brazing filler metal is any one selected from the group of a CuP-based brazing filler metal, a CuSn-based brazing filler metal, and a CuAl-based brazing filler metal, the filler metal does not contain Ag and does not come into direct contact with the copper member, and a heating temperature in the heating treatment step is 560 C. to 650 C.

2. The method for manufacturing a bonded body according to claim 1, wherein the filler metal is disposed on the ceramic member, and the active metal material is disposed on the copper member in the lamination step.

3. The method for manufacturing a bonded body according to claim 2, wherein a thickness of the filler metal is 5 m to 150 m.

4. The method for manufacturing a bonded body according to claim 2, wherein a thickness of the active metal material is 1 m to 20 m.

5. The method for manufacturing a bonded body according to claim 1, wherein the brazing filler metal has a liquidus temperature of 450 C. or higher.

6. The method for manufacturing a bonded body according to claim 1, wherein the brazing filler metal is the CuP-based brazing filler metal or the CuAl-based brazing filler metal.

7. The method for manufacturing a bonded body according to claim 1, wherein the active metal material is a Ti material.

8. A method for manufacturing a power-module substrate having a ceramic substrate and a circuit layer made of copper or a copper alloy, the circuit layer being disposed on one surface of the ceramic substrate, the method comprising bonding the circuit layer onto the one surface of the ceramic substrate using the method for manufacturing a bonded body according to claim 1.

9. A method for manufacturing a power-module substrate having a ceramic substrate, a circuit layer made of copper or a copper alloy, and a metal layer made of copper or a copper alloy, the circuit layer being disposed on one surface of the ceramic substrate, and the metal layer being disposed on another surface of the ceramic substrate, the method comprising: bonding the circuit layer and the metal layer onto both surfaces of the ceramic substrate respectively using the method for manufacturing a bonded body according to claim 1.

10. A method for manufacturing a power-module substrate having a ceramic substrate, a circuit layer made of copper or a copper alloy, and a metal layer made of aluminum or an aluminum alloy, the circuit layer being disposed on one surface of the ceramic substrate, and the metal layer being disposed on another surface of the ceramic substrate, the method comprising: bonding the circuit layer onto the one surface of the ceramic substrate using the method for manufacturing a bonded body according to claim 1, and bonding the metal layer onto the other surface of the ceramic substrate after bonding the ceramic substrate and the circuit layer.

11. The method for manufacturing a bonded body according to claim 2, wherein the brazing filler metal has a liquidus temperature of 450 C. or higher.

12. The method for manufacturing a bonded body according to claim 11, wherein the brazing filler metal is the CuP-based brazing filler metal or the CuAl-based brazing filler metal.

13. A method for manufacturing a bonded body formed by bonding a ceramic member made of a ceramic member and a copper member made of copper or a copper alloy, the method comprising: a lamination step of laminating the ceramic member and the copper member through an active metal material and a filler metal having a melting point of 710 C. or lower; and a heating treatment step of heating the ceramic member and the copper member laminated together to bond the ceramic member and the copper member in a state of being pressurized in the lamination direction at 1 kgf/cm.sup.2 to 35 kgf/cm.sup.2, wherein the filler metal is a solder material, the solder material is a CuPSnNi-based solder material or a CuSn-based solder material, the filler metal does not contain Ag, the solder material has a liquidus temperature of lower than 450 C., and a heating temperature in the heating treatment step is 560 C. to 650 C.

14. The method for manufacturing a bonded body according to claim 13, wherein the filler metal is disposed on the ceramic member, and the active metal material is disposed on the copper member in the lamination step.

15. The method for manufacturing a bonded body according to claim 14, wherein the solder material is the CuPSnNi-based solder material.

16. The method for manufacturing a bonded body according to claim 14, wherein a thickness of the filler metal is 5 m to 150 m.

17. The method for manufacturing a bonded body according to claim 14, wherein a thickness of the active metal material is 1 m to 20 m.

18. The method for manufacturing a bonded body according to claim 13, wherein the solder material is the CuPSnNi-based solder material.

19. The method for manufacturing a bonded body according to claim 13, wherein the active metal material is a Ti material.

20. The method for manufacturing a bonded body according to claim 13, wherein a heating time in the heating treatment step is 30 minutes to 360 minutes.

21. A method for manufacturing a power-module substrate having a ceramic substrate and a circuit layer made of copper or a copper alloy, the circuit layer being disposed on one surface of the ceramic substrate, the method comprising bonding the circuit layer onto the one surface of the ceramic substrate using the method for manufacturing a bonded body according to claim 13.

22. A method for manufacturing a power-module substrate having a ceramic substrate, a circuit layer made of copper or a copper alloy, and a metal layer made of copper or a copper alloy, the circuit layer being disposed on one surface of the ceramic substrate, and the metal layer being disposed on another surface of the ceramic substrate, the method comprising: bonding the circuit layer and the metal layer onto both surfaces of the ceramic substrate respectively using the method for manufacturing a bonded body according to claim 13.

23. A method for manufacturing a power-module substrate having a ceramic substrate, a circuit layer made of copper or a copper alloy, and a metal layer made of aluminum or an aluminum alloy, the circuit layer being disposed on one surface of the ceramic substrate, and the metal layer being disposed on another surface of the ceramic substrate, the method comprising: bonding the circuit layer onto the one surface of the ceramic substrate using the method for manufacturing a bonded body according to claim 13, and bonding the metal layer onto the other surface of the ceramic substrate after bonding the ceramic substrate and the circuit layer.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1 is a schematic explanatory view of a power-module for which a power-module substrate according to a first embodiment of the present invention is used.

(2) FIG. 2 is a schematic explanatory view of the power-module substrate according to the first embodiment of the present invention.

(3) FIG. 3 is a flowchart illustrating a method for manufacturing the power-module substrate according to the first embodiment of the present invention and a method for manufacturing the power-module.

(4) FIG. 4 is a schematic explanatory view of the method for manufacturing the power-module substrate according to the first embodiment of the present invention and the method for manufacturing the power-module.

(5) FIG. 5 is a schematic explanatory view of a power-module for which a power-module substrate according to a second embodiment of the present invention is used.

(6) FIG. 6 is a flowchart illustrating a method for manufacturing the power-module substrate according to the second embodiment of the present invention and a method for manufacturing the power-module.

(7) FIG. 7 is a schematic explanatory view of the method for manufacturing the power-module substrate according to the second embodiment of the present invention and the method for manufacturing the power-module.

(8) FIG. 8 is a schematic explanatory view of a method for manufacturing a power-module substrate according to another embodiment of the present invention.

DESCRIPTION OF EMBODIMENTS

(9) (First Embodiment)

(10) Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. First, a first embodiment of the present invention will be described.

(11) In a method for manufacturing a bonded body of the present embodiment, a power-module substrate 10 is manufactured as a bonded body by bonding a ceramic substrate 11 (ceramic member), a circuit layer 12 (copper member), and a metal layer 13 (copper member). FIG. 1 illustrates a power-module 1 including the power-module substrate 10 of the present embodiment.

(12) This power-module 1 includes the power-module substrate 10 provided with the circuit layer 12, a semiconductor element 3 bonded to one surface (the upper surface in FIG. 1) of the circuit layer 12 through a bonding layer 2, and a heat sink 30 disposed on the other side (the lower side in FIG. 1) of the power-module substrate 10.

(13) As illustrated in FIG. 2, the power-module substrate 10 includes the ceramic substrate 11, the circuit layer 12 disposed on one surface (the upper surface in FIG. 2) of the ceramic substrate 11, and the metal layer 13 disposed on the other side (the lower surface in FIG. 2) of the ceramic substrate 11.

(14) The ceramic substrate 11 is made of a highly insulating ceramic material such as aluminum nitride (AlN), silicon nitride (Si.sub.3N.sub.4), or alumina (Al.sub.2O.sub.3). In the present embodiment, the ceramic substrate 11 is made of aluminum nitride (AlN) having excellent heat-dissipating properties. In addition, the thickness of the ceramic substrate 11 is set in a range of 0.2 mm to 1.5 mm and, in the present embodiment, is set to 0.635 mm.

(15) The circuit layer 12 is formed by bonding a conductive metal sheet of copper or a copper alloy to one surface of the ceramic substrate 11. In the present embodiment, the circuit layer 12 is formed by bonding a rolled sheet of copper having a purity of 99.99% by mass or greater. The thickness of the circuit layer 12 is set in a range of 0.1 mm to 1.0 mm and, in the present embodiment, is set to 0.6 mm.

(16) The metal layer 13 is formed by bonding a metal sheet of copper or a copper alloy to the other surface of the ceramic substrate 11. In the present embodiment, similar to the circuit layer 12, the metal layer 13 is formed by bonding a rolled sheet of copper having a purity of 99.99% by mass or greater. The thickness of the metal layer 13 is set in a range of 0.1 mm to 1.0 mm and, in the present embodiment, is set to 0.6 mm.

(17) The semiconductor element 3 is made of a semiconductor material such as Si. The semiconductor element 3 and the circuit layer 12 are bonded together through the bonding layer 2.

(18) As the bonding layer 2, for example, a SnAg-based solder material, a SnIn-based solder material, or a SnAgCu-based solder material is used.

(19) The heat sink 30 is a device for dissipating heat from the power-module substrate 10. In the present embodiment, the heat sink 30 is made of copper or a copper alloy and, in the present embodiment, is made of oxygen-free copper. The heat sink 30 is provided with flow paths 31 for the flow of a cooling fluid. The heat sink 30 and the metal layer 13 are bonded together through a solder layer 18 made of a solder material.

(20) Next, a method for manufacturing the power-module 1 according to the present embodiment will be described with reference to the flowchart of FIG. 3 and FIG. 4.

(21) First, as illustrated in FIG. 4, a filler metal 25, an active metal material 26, and a copper sheet 22 serving as the circuit layer 12 are sequentially laminated on one surface (the upper surface in FIG. 4) of the ceramic substrate 11, and, on the other surface (the lower surface in FIG. 4) of the ceramic substrate 11 as well, as illustrated in FIG. 4, a filler metal 25, an active metal material 26, and a copper sheet 23 serving as the metal layer 13 are sequentially laminated. (lamination step S01). That is, the filler metal 25 is disposed on a ceramic substrate 11 side and the active metal material 26 is disposed on a copper sheet 22 side between the ceramic substrate 11 and the copper sheet 22, and the filler metal 25 is disposed on the ceramic substrate 11 side and the active metal material 26 is disposed on the copper sheet 22 side between the ceramic substrate 11 and the copper sheet 23.

(22) The filler metal 25 indicates a brazing filler metal or a solder material, and a CuP-based brazing filler metal, a CuSn-based brazing filler metal, a CuPSnNi-based solder material, or a CuSn-based solder material, which has a melting point of 710 C. or lower, is used. As the CuP-based brazing filler metal, for example, a CuP brazing filler metal, a CuPSn brazing filler metal, a CuPSnNi brazing filler metal or the like can be used.

(23) In the present embodiment, a CuPSnNi-based brazing filler metal foil (Cu-7 mass %P-15 mass %Sn-10 mass %Ni) is used as the filler metal 25. The thickness of the filler metal 25 is set in a range of 5 m to 150 m.

(24) The active metal material 26 contains one or more active elements such as Ti, Zr Nb, and Hf, and, in the present embodiment, a Ti foil is used as the active metal material 26. The thickness of the active metal material 26 is set in a range of 1 m to 20 m.

(25) Next, the ceramic substrate 11, the filler metals 25, the active metal materials 26, and the copper sheets 22 and 23 are loaded and heated in a vacuum-heating furnace in a state of being pressurized in the lamination direction at 1 kgf/cm.sup.2 to 35 kgf/cm.sup.2 (98 kPa to 3430 kPa) (heating treatment step SO.sub.2). In the present embodiment, the pressure in the vacuum-heating furnace is set in a range of 10.sup.6 Pa to 10.sup.3 Pa, the heating temperature is set in a range of 560 C. to 650 C., and the heating time is set in a range of 30 minutes to 360 minutes.

(26) In the heating treatment step S02, the active metal materials 26 (Ti foils) and the copper sheets 22 and 23 are bonded together through solid-phase diffusion bonding, and the ceramic substrates 11 and the active metal materials 26 are bonded together through the filler metals 25 in a manner that the filler metal 25 is melted so as to form a liquid phase and the liquid phase is solidified. The bonded surfaces between the active metal materials 26 and the copper sheets 22 and 23, which are bonded together through solid-phase diffusion bonding, are already worked into flat surfaces.

(27) Therefore, the circuit layer 12 (copper member) and the metal layer 13 (copper member) are formed on either surface of the ceramic substrate 11 (ceramic member), thereby manufacturing the power-module substrate 10 (bonded body) of the present embodiment.

(28) Next, the heat sink 30 is bonded to the lower surface of the metal layer 13 in the power-module substrate 10 through a solder material (heat sink-bonding step S03).

(29) Next, the semiconductor element 3 is bonded to the upper surface of the circuit layer 12 in the power-module substrate 10 through a solder material (semiconductor element-bonding step S04).

(30) Thereby, the power-module 1 of the present embodiment is manufactured.

(31) According to the method for manufacturing the power-module substrate according to the present embodiment, since a heating treatment is carried out in a state in which the filler metals 25 having a melting point of 710 C. or lower are disposed on the ceramic substrate 11 side and the active metal materials 26 (Ti materials in the present embodiment) are disposed on the copper sheet 22 and 23 sides between the ceramic substrate 11 and the copper sheets 22 and 23, during heating, Ti is melted into the molten liquid-phase filler metal 25, the wettability of the liquid-phase filler metal 25 to the ceramic substrate 11 is enhanced, and the copper sheet 22 is bonded to the ceramic substrate 11 through the filler metal 25 after the solidification of the filler metal 25, whereby favorable bonding reliability is obtained.

(32) In addition, in the present embodiment, since the active metal materials 26 and the copper sheets 22 and 23 are heated and maintained at a temperature in a range of 560 C. to 650 C. in a state of being laminated and pressurized together, Ti atoms in the active metal materials 26 diffuse into the copper sheets 22 and 23, and copper atoms in the copper sheets 22 and 23 diffuse into the active metal materials 26, whereby it is possible to bond the active metal materials 26 and the copper sheets 22 and 23 through solid-phase diffusion bonding.

(33) In a case in which the heating temperature is 560 C. or higher, it is possible to accelerate the diffusion of Ti atoms in the active metal materials 26 and copper atoms in the copper sheets 22 and 23 and sufficiently diffuse the Ti atoms and the copper atoms in a solid phase within a short period of time. In addition, in a case in which the heating temperature is 650 C. or lower, it is possible to suppress the generation of bumps on the bonding interface caused by the generation of a liquid phase between the active metal materials 26 and the copper sheets 22 and 23 and a change in the thickness. Therefore, the heating temperature is set in the above-described range.

(34) In addition, in the heating treatment step S02, in a case in which the pressure applied in the lamination direction is 1 kgf/cm.sup.2 (98 kPa) or higher, the active metal materials 26 and the copper sheets 22 and 23 can be sufficiently bonded together, and it is possible to suppress the generation of voids between the active metal materials 26 and the copper sheets 22 and 23 (the circuit layer 12 and the metal layer 13). In addition, in a case in which the pressure loaded is 35 kgf/cm.sup.2 (3430 kPa) or lower, it is possible to suppress the generation of cracks in the ceramic substrate 11. Therefore, the pressure applied is set in the above-described range.

(35) In addition, since the melting point of the filler metal 25 is set to 710 C. or lower, it is possible to make the filler metal form a liquid phase at a lower temperature than in a case in which the AgCuTi-based brazing filler metal is used.

(36) Furthermore, since the active metal materials 26 are interposed between the filler metals 25 and the copper sheets 22 and 23, the liquid-phase filler metals 25 do not come into direct contact with the copper sheets 22 and 23, and it is possible to suppress the generation of bumps on the bonding interface and a change in the thickness.

(37) As described above, since the filler metals 25 are suitably bonded to the ceramic substrate 11, and the active metal materials 26 and the copper sheets 22 and 23 are bonded together through solid-phase diffusion bonding, the ceramic substrate 11 and the copper sheets 22 and 23 can be suitably bonded together, and it is possible to improve the bonding reliability between the ceramic substrate 11 and the circuit layer 12 and the metal layer 13.

(38) Furthermore, since the ceramic substrate 11 and the copper sheets 22 and 23 are bonded together using the filler metals 25 which do not contain Ag, it is possible to reduce the manufacturing cost more than in a case in which the AgCuTi-based brazing filler metal is used.

(39) In addition, in the present embodiment, since the circuit layer 12 and the metal layer 13 are bonded to either surface of the ceramic substrate 11 at the same time, it is possible to simplify manufacturing steps and reduce the manufacturing cost.

(40) Furthermore, since the surfaces to be bonded of the active metal materials 26 and the copper sheets 22 and 23 are already worked into flat surfaces, it is possible to suppress the generation of voids in the bonding interface, and the active metal materials 26 and the copper sheets 22 and 23 can be reliably bonded together.

(41) In addition, according to the power-module substrate 10 and the power-module 1 of the present embodiment, since the circuit layer 12 made of the copper sheet 22 is formed on one surface of the ceramic substrate 11, it is possible to spread and dissipate heat from the semiconductor element 3 toward the ceramic substrate 11. In addition, since the copper sheet 22 has strong deformation resistance, when a heat cycle is loaded, the deformation of the circuit layer 12 is suppressed, the deformation of the bonding layer 2 bonding the semiconductor element 3 and the circuit layer 12 is suppressed, and the bonding reliability can be improved.

(42) In addition, since the metal layer 13 made of the copper sheet 23 is formed on the other surface of the ceramic substrate 11, it is possible to efficiently transmit heat from the semiconductor element 3 toward the heat sink 30.

(43) (Second Embodiment)

(44) Next, a second embodiment of the present invention will be described. The same constitution as in the first embodiment will be given the same reference signs and will not be described in detail.

(45) FIG. 5 illustrates a power-module 101 provided with a power-module substrate 110 of the second embodiment.

(46) The power-module 101 includes the power-module substrate 110 provided with a circuit layer 112, the semiconductor element 3 bonded to one surface (the upper surface in FIG. 5) of the circuit layer 112 through the bonding layer 2, and a heat sink 130 disposed on the other side (the lower side in FIG. 5) of the power-module substrate 110.

(47) As illustrated in FIG. 5, the power-module substrate 110 includes the ceramic substrate 11, the circuit layer 112 disposed on one surface (the upper surface in FIG. 5) of the ceramic substrate 11, and a metal layer 113 disposed on the other side (the lower surface in FIG. 5) of the ceramic substrate 11.

(48) The circuit layer 112 is formed by bonding a conductive metal sheet of copper or a copper alloy to one surface of the ceramic substrate 11. In the present embodiment, the circuit layer 112 is formed by bonding a rolled sheet of copper having a purity of 99.99% by mass or greater. The thickness of the circuit layer 112 is set in a range of 0.1 mm to 1.0 mm and, in the present embodiment, is set to 0.4 mm.

(49) The metal layer 113 is formed by bonding a metal sheet of aluminum or an aluminum alloy to the other surface of the ceramic substrate 11. In the second embodiment, the metal layer 13 is formed by bonding a rolled sheet of aluminum having a purity of 99.99% by mass or greater. The thickness of the metal layer 113 is set in a range of 0.1 mm to 3.0 mm and, in the present embodiment, is set to 2.1 mm.

(50) The heat sink 130 is a device for dissipating heat from the power-module substrate 110. In the present embodiment, the heat sink 130 is made of aluminum or an aluminum alloy and, in the present embodiment, is made of A6063 (an aluminum alloy). The heat sink 130 is provided with flow paths 131 for the flow of a cooling fluid. The heat sink 130 and the metal layer 113 are bonded together through an AlSi-based brazing filler metal.

(51) Next, a method for manufacturing the power-module 101 according to the present embodiment will be described with reference to the flowchart of FIG. 6 and FIG. 7.

(52) First, as illustrated in FIG. 7, the filler metal 25, the active metal material 26, and a copper sheet 122 serving as the circuit layer 112 are sequentially laminated on one surface (the upper surface in FIG. 7) of the ceramic substrate 11 (first lamination step S11). That is, the filler metal 25 is disposed on the ceramic substrate 11 side and the active metal material 26 is disposed on the copper sheet 122 side between the ceramic substrate 11 and the copper sheet 122.

(53) In the second embodiment, a CuPSnNi-based brazing filler metal foil (Cu-7 mass %P-15 mass %Sn-10 mass %Ni) is used as the filler metal 25. The thickness of the filler metal 25 is set in a range of 5 m to 150 m.

(54) In addition, in the second embodiment, a Ti foil is used as the active metal material 26. The thickness of the active metal material 26 is set in a range of 1 m to 20 m.

(55) Next, the ceramic substrate 11, the filler metals 25, the active metal materials 26, and the copper sheet 122 are loaded and heated in a vacuum-heating furnace in a state of being pressurized in the lamination direction at a pressure in a range of 1 kgf/cm.sup.2 to 35 kgf/cm.sup.2 (98 kPa to 3430 kPa) (first heating treatment step S12). In the present embodiment, the pressure in the vacuum-heating furnace is set in a range of 10.sup.6 Pa to 10.sup.3 Pa, the heating temperature is set in a range of 560 C. to 650 C., and the heating time is set in a range of 30 minutes to 360 minutes.

(56) Therefore, the copper sheet 122 is bonded to one surface of the ceramic substrate 11, thereby forming the circuit layer 112.

(57) Next, an aluminum sheet 123 made of the metal layer 113 is laminated on the other surface (the lower surface in FIG. 7) of the ceramic substrate 11 through an AlSi-based brazing filler metal 127 as illustrated in FIG. 7 (second lamination step S13). In the second embodiment, in the second lamination step S13, the heat sink 130 was further laminated below the aluminum sheet 123 through the AlSi-based brazing filler metal 127 as illustrated in FIG. 7.

(58) Next, the ceramic substrate 11, the aluminum sheet 123, and the heat sink 130 are loaded and heated in a vacuum-heating furnace in a state of being pressurized in the lamination direction at 1 kgf/cm.sup.2 to 35 kgf/cm.sup.2 (98 kPa to 3430 kPa) (second heating treatment step S14). In the present embodiment, the pressure in the vacuum-heating furnace is set in a range of 10.sup.6 Pa to 10.sup.3 Pa, the heating temperature is set in a range of 600 C. to 650 C., and the heating time is set in a range of 30 minutes to 180 minutes.

(59) Therefore, the aluminum sheet 123 is bonded to the other surface of the ceramic substrate 11, thereby forming the metal layer 113, thereby manufacturing the power-module substrate 110 of the second embodiment, and furthermore, the heat sink 130 is bonded to the lower side of the power-module substrate.

(60) Next, the semiconductor element 3 is bonded to the upper surface of the circuit layer 112 in the power-module substrate 110 through a solder material (semiconductor element-bonding step S15).

(61) Therefore, the power-module 101 of the second embodiment is manufactured.

(62) According to the method for manufacturing the power-module substrate 110 of the present embodiment, since a heating treatment is carried out in a state in which the filler metals 25 having a melting point of 710 C. or lower are disposed on the ceramic substrate 11 side and the active metal materials 26 (Ti materials) are disposed on the copper sheet 122 side between the ceramic substrate 11 and the copper sheet 122, during heating, Ti is melted into the molten liquid-phase filler metal 25, and the wettability of the liquid-phase filler metal 25 to the ceramic substrate 11 becomes favorable.

(63) Therefore, when the liquid-phase filler metal 25 is solidified, the bonding reliability between the filler metal 25 and the ceramic substrate 11 improves.

(64) In addition, in the present embodiment, since the active metal material 26 and the copper sheet 122 are heated and maintained at a temperature in a range of 560 C. to 650 C. in a state of being laminated and pressurized together, it is possible to bond the active metal materials 26 and the copper sheet 122 through solid-phase diffusion bonding.

(65) Furthermore, according to the power-module substrate 110 and the power-module 101, since the metal layer 113 made of the aluminum sheet 123 is formed on the other surface of the ceramic substrate 11, when a thermal cycle is loaded, it is possible to absorb thermal stress generated between the power-module substrate 110 and the heat sink 130 using the metal layer 113, and it is possible to suppress the generation of cracks in the ceramic substrate 11.

(66) Thus far, the embodiments of the present invention have been described, but the present invention is not limited thereto and can be modified in an appropriate manner within the scope of the technical concept of the present invention.

(67) In the above-described embodiments, the case in which the metal layer is formed on the other surface of the ceramic substrate is described, although the metal layer need not be formed.

(68) In the above-described embodiments, the case in which a CuPSnNi-based brazing filler metal having a melting point of 710 C. or lower is used as the filler metal is described, but a brazing filler metal having a melting point (solidus temperature) of 710 C. or lower and having a liquidus temperature of 450 C. or higher may be used as the filler metal. Specifically, this brazing filler metal may be any one selected from a CuP-based brazing filler metal, a CuSn-based brazing filler metal, and a CuAl-based brazing filler metal. As the CuP-based brazing filler metal, it is possible to use, for example, a CuP brazing filler metal, a CuPSn brazing filler metal or the like. In a case in which the above-described brazing filler metal is used, it is possible to reliably bond the ceramic member and the copper member under a low temperature condition due to the low melting point of the brazing filler metal.

(69) In addition, a solder material having a liquidus temperature of lower than 450 C. may be used as the filler metal. Specifically, the solder material may be a CuPSnNi-based solder material or a CuSn-based solder material. In a case in which the above-described solder material is used, the solder material has a lower melting point than the brazing filler metal, and thus it is possible to bond the ceramic member and the copper member under a lower temperature condition.

(70) In addition, when the active metal materials are disposed on the ceramic member side, the brazing filler metals are disposed on the copper member sides, and the heating treatment is carried out, it is also possible to bond the ceramic member and the copper member. For example, as illustrated in FIG. 8, when an active metal material 226 is disposed on a ceramic member 211 through sputtering or the like, a filler metal 225 is disposed between the active metal material 226 and a copper member 222, and a heating treatment is carried out in a state in which the active metal material and the filler metal are laminated and pressured in the lamination direction, the active metal material 226 and the copper member 222 can be bonded together.

(71) In addition, in the above-described embodiments, the case in which the heat sink is bonded to the other surface of the power-module substrate is described, although the heat sink need not be bonded.

(72) In addition, in the above-described embodiments, the case in which the power-module substrate and the heat sink are bonded together using a solder material or a brazing filler metal is described, but the power-module substrate and the heat sink may be fixed to each other using grease or screws.

(73) In addition, in the second embodiment, the case in which the metal layer and the heat sink are bonded together at the same time is described, but it may be also possible to bond the metal layer first and then bond the heat sink to the metal layer.

EXAMPLES

(74) Hereinafter, the results of a confirmation test carried out to confirm the effects of the present invention will be described.

(75) In each of Invention Examples 1 to 10, a filler metal, an active metal material, and a copper sheet made of copper having a purity of 99.99% (37 mm37 mm0.3 mmt (thickness)), which are described in Table 1, are laminated on either surface of a ceramic substrate made of AlN (40 mm40 mm0.635 mmt).

(76) In Invention Example 11, a filler metal, an active metal material, and a copper sheet made of copper having a purity of 99.99% (37 mm37 mm0.3 mmt), which are described in Table 1, are laminated/1 on one surface of a ceramic substrate made of AlN (40 mm40 mm0.635 mmt).

(77) In each of Invention Examples 1 to 9 and Invention Example 11 in which the position of the active metal is set on the copper member side (copper sheet side), the ceramic substrate, the filler metal, the active metal material, and the copper sheet were laminated in this order, and, in Invention Example 10 in which the position of the active metal is set on the ceramic substrate side, the ceramic substrate, the active metal material, the filler metal, and the copper sheet were laminated in this order.

(78) In addition, in Invention Examples 1 to 10, the components were loaded and heated in a vacuum-heating furnace in a state of being pressurized in the lamination direction at a pressure of 15 kgf/cm.sup.2 (1470 kPa), whereby copper sheets were bonded to either surface of the ceramic substrate, and a circuit layer and a metal layer were formed. The pressure in the vacuum-heating furnace was set in a range of 10.sup.6 Pa to 10.sup.3 Pa, and the heating temperature and the heating time were set to the conditions described in Table 1. Therefore, power-module substrates of Invention Examples 1 to 9 were obtained.

(79) In Invention Example 11, the components were loaded and heated in a vacuum-heating furnace in a state of being pressurized in the lamination direction at a pressure of 15 kgf/cm.sup.2 (1470 kPa), whereby a copper sheet was bonded to one surface of the ceramic substrate, and a circuit layer was formed. The pressure in the vacuum-heating furnace was set in a range of 10.sup.6 Pa to 10.sup.3 Pa, and the heating temperature and the heating time were set to the conditions described in Table 1. After cooling, an aluminum sheet having a purity of 99.99% was laminated on the other surface of the ceramic substrate through an AlSi-based brazing filler metal, the components were loaded and heated in a vacuum-heating furnace at 640 C. for 30 minutes in a state of being pressurized in the lamination direction at a pressure of 5 kgf/cm.sup.2 (490 kPa), whereby an aluminum sheet was bonded to the other surface of the ceramic substrate, and a power-module substrate of Invention Example 11 was obtained.

(80) Next, a heat sink was bonded to the surface of the power-module substrate opposite to the metal layer side. As the heat sink, a copper sheet made of phosphorous-deoxidized copper (50 mm60 mm5 mmt) was used. Regarding the bonding conditions, the heat sink was bonded by heating a SnSb-based solder material at 270 C.

(81) Therefore, power-module substrates with a heat sink of Invention Examples 1 to 11 were produced.

(82) For the power-module substrates with a heat sink of the invention examples obtained as described above, the bonding rates between the circuit layer and the ceramic substrate and the bonding rates between the circuit layer and the ceramic substrate after a thermal cycle test were evaluated. The testing method of the thermal cycle and the method for evaluating the bonding rate will be described below.

(83) (Thermal Cycle Test)

(84) In the thermal cycle test, a thermal shock chamber TSB-51 manufactured by ESPEC Corp. was used, and a temperature-change process in which the power-module substrate with a heat sink was maintained in a liquid phase (fluorinert) under a temperature environment of 40 C. for five minutes, then, was heated up to 125 C., was maintained under the same temperature environment for five minutes, and, again, was returned to the temperature environment of 40 C. (one cycle) was carried out for 3000 cycles.

(85) (Evaluation of Bonding Rate Between Ceramic Substrate and Circuit Layer)

(86) For the power-module substrates with a heat sink, the bonding rates in the interfaces between the ceramic substrate and the circuit layer were evaluated using an ultrasonic flaw detector and were computed using the following formula.

(87) The initial bonding area referred to an area to be bonded before bonding, that is, the area of the circuit layer in the present embodiment. Using the ultrasonic flaw detector exfoliation was observed at white portions in the bonding portion, and thus the area of these white portions was considered as the exfoliation area. In a case in which cracks were generated in the ceramic substrate and the circuit layer, these cracks were observed at the white portions by the ultrasonic flaw detector, and the cracks were also evaluated using the exfoliation area.

(88) $\begin{array}{cc}\mathrm{Bonding}\mathrm{rate}\left(\%\right)=\frac{\left(\mathrm{Initial}\mathrm{bonding}\mathrm{area}\right)-\left(\mathrm{Exfoliation}\mathrm{area}\right)}{\left(\mathrm{Initial}\mathrm{bonding}\mathrm{area}\right)}100& \left(\mathrm{Formula}1\right)\end{array}$

(89) The results of the above-described evaluations are described in Table 1 below.

(90) TABLE-US-00001 TABLE 1 Thickness Type of of filler Melting Position of active metal point of active metal metal Components of filler metal M filler metal material material Invention Cu6.3 mass % P9.3 mass % Sn7 mass % Ni 20 600 C. Copper Ti Example 1 member side Invention Cu7 mass % P15 mass % Sn10 mass % Ni 20 580 C. Copper Ti Example 2 member side Invention Cu7 mass % P15 mass % Sn10 mass % Ni 20 580 C. Copper Zr Example 3 member side Invention Cu7 mass % P15 mass % Sn10 mass % Ni 20 580 C. Copper Nb Example 4 member side Invention Cu7 mass % P15 mass % Sn10 mass % Ni 20 580 C. Copper Hf Example 5 member side Invention Cu7 mass % P 20 710 C. Copper Ti Example 6 member side Invention Sn0.7 mass % Cu0.03 mass % NiP 150 217 C. Copper Ti Example 7 member side Invention Sn0.7 mass % Cu 150 227 C. Copper Ti Example 8 member side Invention Al33 mass % Cu 100 548 C. Copper Ti Example 9 member side Invention Cu7 mass % P15 mass % Sn10 mass % Ni 20 580 C. Ceramic Ti Example 10 substrate side Invention Cu7 mass % P15 mass % Sn10 mass % Ni 20 580 C. Copper Ti Example 11 member side Thickness Bonding of active Initial rate after metal bonding thermal material Material of Heating conditions area cycle test m metal layer Temperature Time % % Invention 3 Cu 650 C. 60 minutes 99.6 93.8 Example 1 Invention 3 Cu 650 C. 60 minutes 99.8 97.9 Example 2 Invention 3 Cu 650 C. 30 minutes 98.9 97.2 Example 3 Invention 3 Cu 650 C. 90 minutes 99.2 96.1 Example 4 Invention 3 Cu 650 C. 90 minutes 100 99.3 Example 5 Invention 10 Cu 750 C. 60 minutes 99.7 97.8 Example 6 Invention 10 Cu 560 C. 300 minutes 98.2 88.4 Example 7 Invention 10 Cu 560 C. 360 minutes 98.4 90.7 Example 8 Invention 15 Cu 600 C. 60 minutes 98.0 89.5 Example 9 Invention 3 Cu 650 C. 60 minutes 99.6 86.0 Example 10 Invention 3 Al 650 C. 60 minutes 100 98.5 Example 11

(91) In Invention Examples 1 to 11 in which the filler metal having a melting point of 710 C. or lower was used, it was confirmed that the initial bonding rates were high, high bonding rates were maintained even after the thermal cycle was loaded, and power-module substrates could be obtained.

REFERENCE SIGNS LIST

(92) 10, 110 POWER-MODULE SUBSTRATE

(93) 11 CERAMIC SUBSTRATE (CERAMIC MEMBER)

(94) 12, 112 CIRCUIT LAYER (COPPER MEMBER)

(95) 13 METAL LAYER (COPPER MEMBER)

(96) 25, 225 FILLER METAL

(97) 26, 226 ACTIVE METAL MATERIAL

(98) 113 METAL LAYER

(99) 211 CERAMIC MEMBER

(100) 222 COPPER MEMBER

INDUSTRIAL APPLICABILITY

(101) The present invention relates to a method for manufacturing a power-module substrate in which a ceramic member and a copper member can be bonded together at a low temperature and, furthermore, the manufacturing cost is low.