OPTICAL FILTER AND OPTICAL DEVICE USING THE SAME
20190018188 ยท 2019-01-17
Assignee
Inventors
- Kyeong Seok Lee (Seoul, KR)
- Gyu Weon Hwang (Seoul, KR)
- In Ho Kim (Seoul, KR)
- Won Mok Kim (Seoul, KR)
- Wook Seong Lee (Seoul, KR)
- Doo Seok Jeong (Seoul, KR)
Cpc classification
G02B5/208
PHYSICS
G02B6/12007
PHYSICS
International classification
Abstract
Provided is an optical filter including a cladding layer, a plurality of metal patterns configured to form a periodic lattice structure on the cladding layer; and an optical waveguide layer on the plurality of metal patterns. Light travels from the optical waveguide layer to the cladding layer. Provided is an optical device using the optical filter.
Claims
1. An optical filter comprising: a cladding layer; a plurality of metal patterns configured to form a periodic lattice structure on the cladding layer; and an optical waveguide layer on the plurality of metal patterns, wherein light travels from the optical waveguide layer to the cladding layer.
2. The optical filter of claim 1, wherein the plurality of metal patterns is patterned to form a two-dimensional slit mesh structure.
3. The optical filter of claim 1, wherein a ratio of a slit width to a period of the plurality of metal patterns is 1/30 to 1/3.
4. The optical filter of claim 1, wherein the plurality of metal patterns has at least two regions having different periods and each region is a filter region for filtering different wavelengths.
5. The optical filter of claim 1, wherein an antireflection layer is further provided on the optical waveguide layer.
6. The optical filter of claim 1, wherein the cladding layer is a substrate.
7. The optical filter of claim 6, wherein a separate substrate is added under the cladding layer.
8. The optical filter of claim 1, wherein a separate optical waveguide layer is further provided between the cladding layer and the plurality of patterns.
9. The optical filter of claim 1, wherein a period of the plurality of metal patterns is configured to be smaller than a central wavelength to be filtered by the optical filter.
10. An optical device comprising: the flat plate optical filter of claim 1; and an optical detector corresponding to the optical filter.
11. The optical device of claim 10, wherein a plurality of metal patterns has at least two regions having different periods and each region is a filter region for filtering different wavelengths.
12. The optical device of claim 10, wherein a passivation layer is further added between the optical filter and the optical detector.
13. The optical device of claim 10, wherein the optical device is one of a non-dispersion infrared sensor, a spectrometer, a CMOS image sensor, or a hyper-spectral image sensor.
14. An optical filter comprising: a substrate; a cladding layer on the substrate; a plurality of metal patterns periodically patterned on the cladding layer; and a first optical waveguide layer on the plurality of metal patterns, wherein light travels from the substrate to the first optical waveguide layer.
15. The optical filter of claim 14, wherein a second optical waveguide layer is further added between the cladding layer and the plurality of metal patterns.
16. An optical device comprising: the flat plate optical filter of claim 14; and an optical detector corresponding to the optical filter.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0018]
[0019]
[0020]
[0021]
[0022]
[0023]
MODE FOR CARRYING OUT THE INVENTION
[0024] Hereinafter, embodiments of the present invention are described in more detail with reference to the accompanying drawings. However, the following illustrative embodiment of the present invention may be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Embodiments of present inventions are provided to more fully describe the present invention to those of ordinary skill in the art.
[0025]
[0026] An optical filter 100 includes a cladding layer 110 and a plurality of metal patterns 120 patterned to have a periodic lattice structure and an optical waveguide layer 130 formed on the plurality of metal patterns 120. One of the characteristic features of the present invention is that the optical waveguide layer 130 is formed on the plurality of metal patterns 120.
[0027] At this time, if the lattice period of the metal pattern is configured to be smaller than the central wavelength to be filtered by the optical filter, it operates as a zero-order diffraction grating. By forming neighboring metal patterns and a very narrow mesh-shaped slit structure, the out-of-band rejection effect is excellent, and the transmission central wavelength is dominantly dependent on the lattice period. According to this structure, when a light having a plurality of wavelengths enters through the optical waveguide layer 130 and meets a diffraction grating composed of the plurality of metal patterns 120, the resonance wavelength light of the zero-order characteristic is transmitted through the slit, and on the other hand, a light of 1 order diffracted in the form of an evanescent field is coupled with the waveguide mode of the backward waveguide. The light coupled in the waveguide mode undergoes a process of meeting the metal pattern lattice structure again and being converted into a propagation mode for penetrating a slit, so that the light of a certain resonance wavelength is filtered out with high transmittance.
[0028] The spectrum of the transmission band is greatly influenced by the optical structural factors such as the slit width, refractive index and thickness of the optical waveguide layer in addition to the lattice period. The refractive index of the optical waveguide layer should be higher than the refractive index of the cladding layer and the thickness thereof may within a range of .sub.0/4n.sub.wg<t.sub.wg<.sub.0/n.sub.wg so as to satisfy the single waveguide mode condition. Here, .sub.0 means the transmission central wavelength. If the thickness of the optical waveguide layer is too small, the waveguide mode may not be formed and when out of the range, multi-wave mode occurs, so that the half-width of the transmission band is increased and the multi-transmission band is formed. Therefore, the out-of-band rejection characteristic becomes deteriorated.
[0029] The lattice period P of the metal pattern is determined so as to have a relation .sub.0 and P<.sub.0<n.sub.wgP with the transmission central wavelength AO. The metal material constituting the metal pattern may be at least one selected from the group consisting of Au, Ag, Al, Cu, Pt, Pd, Ni, Co, Fe, Mn, Cr, Mo, W, V, Ta, Nb, Hf, Pb, Sb, Bi, and alloys thereof. The thickness of the metal patterns may be made from 5 nm to 500 nm. When the thickness is reduced to 5 nm or less, the surface scattering effect of the electron increases the light loss due to the metal itself, and if the thickness is too large, a resonance effect occurs in the vertical direction of the slit structure. Therefore, it has a disadvantage in that it may give an unfavorable effect to the formation of a single transmission band and it is difficult to realize a process.
[0030] If the material used for the optical waveguide layer 130 is optically transparent in the operating wavelength range and has a higher refractive index than the cladding layer, organic materials, inorganic materials, and mixtures thereof, compounds, and the like may be used without restriction. For example, the material may include oxides such as SiO.sub.2, Al.sub.2O.sub.3, TiO.sub.2, MgO, ZnO, ZrO.sub.2, In.sub.2O.sub.3, SnO.sub.2, CdO, Ga.sub.2O.sub.3, Y.sub.2O.sub.3, WO.sub.3, V.sub.2O.sub.3, BaTiO.sub.3 and PbTiO.sub.3, nitrides such as Si.sub.3N.sub.4 and Al.sub.3N.sub.4, phosphides such as InP and GaP, sulfides such as ZnS and As.sub.2S.sub.3, fluorides such as MgF.sub.2, CaF.sub.2, NaF, BaF.sub.2, PbF.sub.2, LiF, and LaF, carbide such as SiC, selenides such as ZnSe, inorganic materials composed of a semiconductor such as Si and Ge and a mixture or compound thereof, and organic materials such as polycarbonate, polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), cyclic polyolefin, styrene polymer or Teflon, and a mixtures or compound thereof.
[0031] Like the optical waveguide layer 130, if the cladding layer 110 is optically transparent in the operating wavelength band and has a refractive index lower than that of the optical waveguide layer 130, organic materials, inorganic materials, and mixtures thereof may be used without restriction. The out-of-band rejection characteristic may be expected to be improved by configuring the material of the cladding layer 110 to allow the refractive index difference with respect to the optical waveguide layer 130 to be greatly increased.
[0032] As described above, under the conditions that the optical waveguide layer 130 is formed on the plurality of metal patterns 120 and the incident light is incident on the optical waveguide layer, the present inventors find that it is possible to form a resonant transmission band by coupling with a waveguide mode.
[0033] In such a way, according to the configuration in which the optical waveguide layer 130 is formed on the plurality of metal patterns 120, it is advantageous to reduce the spacing in the integration process with the optical detector, and it is possible to eliminate the damage of the optical waveguide material and structure which may occur in the etching process for manufacturing the metal lattice. Furthermore, the function as a protective layer of the metal lattice may be added. In addition, since the thickness of the optical waveguide layer 130 may be monitored in real time in the process of forming the optical waveguide layer 130, there is an advantage in the thickness optimization process.
[0034] Referring to
[0035] On the other hand, it is confirmed that it is possible to have particularly excellent characteristics when the width ratio of the slit shape with respect to the period of the metal patterns is limited to 1/3 or less. The excellent characteristics mean that the transmission band may be formed with a very small half-width, and the out-of-band rejection characteristic is improved. Since the metal patterns are patterned in a rectangular shape, the slits are formed in a mesh shape.
[0036] This will be described in more detail. When defining the period as P1, P1 is equal to the sum of the width D1 of the metal patterns and the width S1 of the slit. At this time, the ratio of the width S1 of the slit to the period P1 of the metal patterns may be 1/30 to 1/3. When the width of the slit is relatively small, the half-width of the transmission band is reduced and the out-of-band rejection effect is improved. However, the transmission peak is reduced in size. On the contrary, when the width of the slit is relatively wide, the size of the transmission band is increased and the out-of-band rejection effect is reduced.
[0037]
[0038] On the other hand, it is possible to manufacture an optical device as the optical detector 200 corresponds to the optical filter 100 of the present invention. The optical filter 100 may be integrated directly with the optical detector 200 or may be separately manufactured in a module form and attached to each other. In the case where the optical filter 100 is separately manufactured, the optical filter 100 may be fabricated on a separate substrate and attached to a module having an optical detector.
[0039] A separate passivation layer 210 may be formed between the optical detector 200 and the optical filter 100. This case may be more effective compared with a case where the optical filter 100 is directly integrated with the optical detector 200.
[0040]
[0041]
[0042] The optical filter 100 according to the present invention embodiment is composed of a plurality of filter regions F1 and F2. On the other hand, a spectrometer configured with the optical filter is composed of a plurality of filter regions F1 and F2 and corresponding light detection regions PD1 and PD2. The filter regions F1 and F2 are configured to filter light of different wavelengths and correspond to the light detection regions PD1 and PD2, respectively.
[0043] On the other hand, each of the filter regions F1 and F2 may be realized in such a manner that the duty cycle or charge rate of the metal patterns is the same or only the slit width, which is the gap between the metal patterns, is kept constant. However, the period of the F1 filter region and the period of the F2 filter region are changed.
[0044]
[0045]
[0046] The coupling layer 210 is disposed between the substrate 300 and the optical detector 200 and may use oil or the like for matching air or a refractive index.
[0047]
[0048]
[0049]
[0050] In relation to the optical filter of
[0051]
[0052]
[0053]
[0054] That is, the optical filter of
[0055] According to the method of incidence through the substrate 700, the metal lattice layer is prevented from being exposed to the outside, thereby enhancing the environmental resistance.
[0056] On the other hand, the optical waveguide layer 730 in direct contact with the plurality of metal patterns 720 may be replaced with a buffer layer (not shown) having a low refractive index. The difference between the optical waveguide layer and the buffer layer is that that the optical thickness of the buffer layer represented by the product of the refractive index and the thickness is formed to be less than a certain size so that the waveguide mode is not formed.
[0057]
[0058] On the other hand, an additional low reflective coating layer 140 and/or a protective layer (not shown) may be further formed on the substrate 700.
[0059]
[0060] The optical filter of
[0061] Although the exemplary embodiments of the present invention have been described, it is understood that the present invention should not be limited to these exemplary embodiments but various changes and modifications can be made by one ordinary skilled in the art within the spirit and scope of the present invention as hereinafter claimed.