TFT substrate manufacturing method

Abstract

The present invention provides a TFT substrate manufacturing method, which includes first forming a graphene semiconductor active layer on a metal foil, then sequentially forming an inorganic insulation layer and an organic base on the graphene semiconductor active layer, followed by turning up-side down to set the metal foil on a topmost layer, then forming a photoresist layer, through a patterning operation, on the metal foil and subjecting the metal foil to etching to form a source electrode and a drain electrode, then sequentially forming an organic insulation layer and a gate electrode conductor layer on the photoresist layer and the graphene semiconductor active layer, and finally, applying a photoresist peeling agent to remove the photoresist layer with portions of the organic insulation layer and the gate electrode conductor layer located thereon removed therewith so as to obtain patterned gate insulation layer and gate electrode. The manufacturing method involves an operation of turning up-side down to to allow the metal foil that is used to deposit a graphene film to be re-used as an electrode material for formation of the source and drain electrodes so that an effect of lowering down manufacturing cost and simplifying operations can be achieved. And, through application of lift-off technique, only one mask is necessary to obtain patterned source electrode, drain electrode, and gate electrode.

Claims

1. A thin-film transistor (TFT) substrate manufacturing method, comprising the following steps: Step S1: providing a metal foil, depositing a graphene film on the metal foil, and applying an operation of changing graphene band gap to obtain a graphene semiconductor active layer; Step S2: forming, through deposition, an inorganic insulation layer on the graphene semiconductor active layer; Step S3: forming an organic base on the inorganic insulation layer to form a primary structure; Step S4: turning up-side down the primary structure formed in Step S3 to set the organic base as a bottommost layer and the metal foil as a topmost layer, and forming a photoresist layer, through a patterning operation with a mask, on the metal foil; Step S5: subjecting the metal foil to etching by using the photoresist layer as a shielding layer so as to form a source electrode and a drain electrode that are spaced from each other; Step S6: forming an organic insulation layer on the photoresist layer and the graphene semiconductor active layer, and forming, through deposition, a gate electrode conductor layer on the organic insulation layer; and Step S7: applying a photoresist peeling agent to remove the photoresist layer and also to have portions of the organic insulation layer and the gate electrode conductor layer that are located on the photoresist layer removed simultaneously with the photoresist layer such that a gate insulation layer is obtained with a remaining portion of the organic insulation layer so as to be located on the graphene semiconductor active layer and between the source electrode and the drain electrode and a gate electrode is obtained with a remaining portion of the gate electrode conductor layer so as to be located on the gate insulation layer.

2. The TFT substrate manufacturing method as claimed in claim 1, wherein the metal foil is made of a material of copper or nickel.

3. The TFT substrate manufacturing method as claimed in claim 1, wherein in Step S1, the operation of changing graphene band gap involves chemical doping, wherein chemical doping is conducted on the graphene film at the same time of deposition thereof so that graphene so deposited is a doped graphene film so as to obtain the graphene semiconductor active layer; or, alternatively, the operation of changing graphene band gap involves photolithography, wherein, after the deposition of the graphene film, the graphene film is cut into thin ribbons to form graphene nanoribbon, so as to obtain the graphene semiconductor active layer.

4. The TFT substrate manufacturing method as claimed in claim 1, wherein in Step S1, plasma enhanced chemical vapor deposition is used to deposit the graphene film, and the graphene film so deposited is a single-layered graphene film; and the graphene semiconductor active layer has a bang gap that is greater than 0.1 eV.

5. The TFT substrate manufacturing method as claimed in claim 1, wherein in Step S2, chemical vapor deposition is used to deposit and form the inorganic insulation layer, and the inorganic insulation layer is made of a material comprising silicon nitride, silicon oxide, diyttrium trioxide, or hafnium dioxide.

6. The TFT substrate manufacturing method as claimed in claim 1, wherein in Step S3, the organic base is formed through solution coating and curing and the organic base is made of a material of polydimethylsiloxane.

7. The TFT substrate manufacturing method as claimed in claim 1, wherein in Step S5, a wet etching operation is applied to subject the metal foil to etching.

8. The TFT substrate manufacturing method as claimed in claim 1, wherein in Step S6, a coating operation is applied to form the organic insulation layer, and the organic insulation layer is made of a material of polymethylmethacrylate.

9. The TFT substrate manufacturing method as claimed in claim 1, wherein in Step S6, physical vapor deposition is applied deposit and form the gate electrode conductor layer, and the gate electrode conductor layer is made of a material comprising aluminum, copper, or indium tin oxide.

10. The TFT substrate manufacturing method as claimed in claim 1 further comprising Step S8 of providing a reinforcement base and melting the organic base for attaching to the reinforcement base; wherein the reinforcement base comprises glass, a plastic material of polyethylene terephthalate, or a silicon plate.

11. A thin-film transistor (TFT) substrate manufacturing method, comprising the following steps: Step S1: providing a metal foil, depositing a graphene film on the metal foil, and applying an operation of changing graphene band gap to obtain a graphene semiconductor active layer; Step S2: forming, through deposition, an inorganic insulation layer on the graphene semiconductor active layer; Step S3: forming an organic base on the inorganic insulation layer to form a primary structure; Step S4: turning up-side down the primary structure formed in Step S3 to set the organic base as a bottommost layer and the metal foil as a topmost layer, and forming a photoresist layer, through a patterning operation with a mask, on the metal foil; Step S5: subjecting the metal foil to etching by using the photoresist layer as a shielding layer so as to form a source electrode and a drain electrode that are spaced from each other; Step S6: forming an organic insulation layer on the photoresist layer and the graphene semiconductor active layer, and forming, through deposition, a gate electrode conductor layer on the organic insulation layer; and Step S7: applying a photoresist peeling agent to remove the photoresist layer and also to have portions of the organic insulation layer and the gate electrode conductor layer that are located on the photoresist layer removed simultaneously with the photoresist layer such that a gate insulation layer is obtained with a remaining portion of the organic insulation layer so as to be located on the graphene semiconductor active layer and between the source electrode and the drain electrode and a gate electrode is obtained with a remaining portion of the gate electrode conductor layer so as to be located on the gate insulation layer; wherein in Step S2, chemical vapor deposition is used to deposit and form the inorganic insulation layer, and the inorganic insulation layer is made of a material comprising silicon nitride, silicon oxide, diyttrium trioxide, or hafnium dioxide; and wherein in Step S3, the organic base is formed through solution coating and curing and the organic base is made of a material of polydimethylsiloxane.

12. The TFT substrate manufacturing method as claimed in claim 11, wherein the metal foil is made of a material of copper or nickel.

13. The TFT substrate manufacturing method as claimed in claim 11, wherein in Step S1, the operation of changing graphene band gap involves chemical doping, wherein chemical doping is conducted on the graphene film at the same time of deposition thereof so that graphene so deposited is a doped graphene film so as to obtain the graphene semiconductor active layer; or, alternatively, the operation of changing graphene band gap involves photolithography, wherein, after the deposition of the graphene film, the graphene film is cut into thin ribbons to form graphene nanoribbon, so as to obtain the graphene semiconductor active layer.

14. The TFT substrate manufacturing method as claimed in claim 11, wherein in Step S1, plasma enhanced chemical vapor deposition is used to deposit the graphene film, and the graphene film so deposited is a single-layered graphene film; and the graphene semiconductor active layer has a bang gap that is greater than 0.1 eV.

15. The TFT substrate manufacturing method as claimed in claim 11, wherein in Step S5, a wet etching operation is applied to subject the metal foil to etching.

16. The TFT substrate manufacturing method as claimed in claim 11, wherein in Step S6, a coating operation is applied to form the organic insulation layer, and the organic insulation layer is made of a material of polymethylmethacrylate.

17. The TFT substrate manufacturing method as claimed in claim 11, wherein in Step S6, physical vapor deposition is applied deposit and form the gate electrode conductor layer, and the gate electrode conductor layer is made of a material comprising aluminum, copper, or indium tin oxide.

18. The TFT substrate manufacturing method as claimed in claim 11 further comprising Step S8 of providing a reinforcement base and melting the organic base for attaching to the reinforcement base; wherein the reinforcement base comprises glass, a plastic material of polyethylene terephthalate, or a silicon plate.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The technical solution, as well as other beneficial advantages, of the present invention will become apparent from the following detailed description of embodiments of the present invention, with reference to the attached drawings.

(2) In the drawings:

(3) FIG. 1 is a flow chart illustrating a thin-film transistor (TFT) substrate manufacturing method according to the present invention

(4) FIG. 2 is a schematic view illustrating Step S1 of the TFT substrate manufacturing method according to the present invention;

(5) FIG. 3 is a schematic view illustrating Step S2 of the TFT substrate manufacturing method according to the present invention;

(6) FIG. 4 is a schematic view illustrating Step S3 of the TFT substrate manufacturing method according to the present invention;

(7) FIG. 5 is a schematic view illustrating Step S4 of the TFT substrate manufacturing method according to the present invention;

(8) FIG. 6 is a schematic view illustrating Step S5 of the TFT substrate manufacturing method according to the present invention;

(9) FIG. 7 is a schematic view illustrating Step S6 of the TFT substrate manufacturing method according to the present invention;

(10) FIG. 8 is a schematic view illustrating Step S7 of the TFT substrate manufacturing method according to the present invention; and

(11) FIG. 9 is a schematic view illustrating Step S8 of the TFT substrate manufacturing method according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

(12) To further expound the technical solution adopted in the present invention and the advantages thereof, a detailed description will be given with reference to the preferred embodiments of the present invention and the drawings thereof.

(13) Referring to FIG. 1, the present invention provides a TFT substrate manufacturing method, which comprises the following steps:

(14) Step S1: as shown in FIG. 2, providing a metal foil 100, depositing a graphene film on the metal foil 100, and applying an operation of changing graphene band gap to obtain a graphene semiconductor active layer 200.

(15) Specifically, in the present invention, the metal foil 100 is made of a material that serves as a material of a base for forming, through deposition, the graphene film and also possesses electrical conductivity to serve, subsequently, a material of an electrode, such as a metal material, including copper (Cu) or nickel (Ni).

(16) Specifically, in Step S1, the operation of changing graphene band gap involves chemical doping, which is, specifically, conducting chemical doping to the graphene film at the same time of deposition thereof so that the graphene film so deposited is a doped graphene film so as to obtain the graphene semiconductor active layer 200; or, alternatively,

(17) the operation of changing graphene band gap involves photolithography, which is, specifically, cutting, after the deposition of the graphene film, the graphene film into thin ribbons to form graphene nanoribbon (GNR), so as to obtain the graphene semiconductor active layer 200.

(18) Specifically, in Step S1, the graphene semiconductor active layer 200 so obtained has a bang gap that is greater than 0.1 eV.

(19) Specifically, in Step S1, plasma enhanced chemical vapor deposition (PECVD) is used to deposit the graphene film, and the graphene film so deposited is preferably a single-layered graphene film having a thickness that is preferably less than 5 nm.

(20) Step S2: as shown in FIG. 3, forming, through deposition, an inorganic insulation layer 300 on the graphene semiconductor active layer 200 in order to provide protection to the graphene semiconductor active layer 200 for preventing influence caused by an organic base, which is formed subsequently, on the graphene semiconductor active layer 200.

(21) Specifically, in Step S2, chemical vapor deposition (CVD) is used to deposit and form the inorganic insulation layer 300, and the inorganic insulation layer 300 is made of material that comprises an inorganic material, including for example silicon nitride (SiNx), silicon oxide (SiO.sub.2), diyttrium trioxide, and hafnium dioxide (HfO.sub.2).

(22) Step S3: as shown in FIG. 4, forming an organic base 400 on the inorganic insulation layer 300 to form a primary structure.

(23) Specifically, in Step S3, the organic base 400 is formed through solution coating and curing and the organic base 400 is made of a material that can be polydimethylsiloxane (PDMS).

(24) Step S4: as shown in FIG. 5, turning up-side down the primary structure formed in Step S3 to set the organic base 400 as a bottommost layer and the metal foil 100 as a topmost layer, and forming a photoresist (PR) layer 500, through a patterning operation with a mask, on the metal foil 100.

(25) Specifically, in Step S4, the patterning operation specifically comprises a coating step, an exposure step, and a development step that are carried out in sequence.

(26) Step S5: as shown in FIG. 6, subjecting the metal foil 100 to etching by using the photoresist layer 500 as a shielding layer so as to form a source electrode 110 and a drain electrode 120 that are spaced from each other.

(27) Specifically, in Step S5, a wet etching operation is applied to subject the metal foil 100 to etching.

(28) Step S6: as shown in FIG. 7, forming an organic insulation layer 600 on the photoresist layer 500 and the graphene semiconductor active layer 200, and forming, through deposition, a gate electrode conductor layer 700 on the organic insulation layer 600.

(29) Specifically, in Step S6, a coating operation is applied to form the organic insulation layer 600, and the organic insulation layer 600 can be formed on the photoresist layer 500 at a low temperature. The organic insulation layer 600 has a dielectric constant that is three times of the dielectric constant of vacuum, such as having a material of polymethylmethacrylate (PMMA).

(30) Specifically, in Step S6, physical vapor deposition (PVD) is used to deposit and form the gate electrode conductor layer 700, and the gate electrode conductor layer 700 is made of a material that is a metal or oxide having electrical conductivity, such as aluminum (Al), copper, and indium tin oxide (ITO).

(31) Step S7: as shown in FIG. 8, applying a photoresist peeling agent to remove the photoresist layer 500 and also to have portions of the organic insulation layer 600 and the gate electrode conductor layer 700 that are located on the photoresist layer 500 removed simultaneously with the photoresist layer 500 such that a gate insulation layer 600 is obtained with a remaining portion of the organic insulation layer 600 so as to be located on the graphene semiconductor active layer 200 and between the source electrode 110 and the drain electrode 120 and a gate electrode 700 is obtained with a remaining portion of the gate electrode conductor layer 700 so as to be located on the gate insulation layer 600.

(32) In a TFT substrate formed with the present invention, the organic base 400 functions as a base that is located on the outermost side to provide a support to a TFT device and is made of a material that is resistant to acid, alkali, and water and can be selected as PDMS or other materials that can be formed through solution coating process. Further, the TFT substrate manufacturing method according to the present invention may further comprises Step S8: as shown in FIG. 9, providing a reinforcement base 800 and melting the organic base 400 for attaching to the reinforcement base 800.

(33) Specifically, the reinforcement base 800 can be made of glass, a plastic material of polyethylene terephthalate (PET), or a silicon plate.

(34) In the above-described TFT substrate manufacturing method, an operation of tuning up-side down is involved to allow a metal foil 100 that is used to deposit a graphene film to be re-used as an electrode material for formation of source and drain electrodes 110, 120 so that an effect of lowering down manufacturing cost and simplifying operations can be achieved. And, through application of lift-off technique, only one mask is necessary to obtain patterned source electrode 110, drain electrode 120, and gate electrode 700.

(35) In summary, the present invention provides a TFT substrate manufacturing method, which comprises first depositing a graphene film on a metal foil, followed by applying an operation of changing graphene bang gap to form a graphene semiconductor active layer, and then, sequentially forming an inorganic insulation layer and an organic base on the graphene semiconductor active layer, wherein through an operation turning up-side down, the metal foil is set on a topmost layer, followed by forming a photoresist layer, through a patterning operation, on the metal foil, subjecting the metal foil to etching with the photoresist layer serving as a shielding layer to form a source electrode and a drain electrode, and then, sequentially forming an organic insulation layer and a gate electrode conductor layer on the photoresist layer and the graphene semiconductor active layer, and finally, applying a photoresist peeling agent to remove the photoresist layer with portions of the organic insulation layer and the gate electrode conductor layer located on the photoresist layer being simultaneously therewith to thereby form patterned gate insulation layer and gate electrode. The manufacturing method involves an operation of turning up-side down to to allow the metal foil that is used to deposit a graphene film to be re-used as an electrode material for formation of the source and drain electrodes so that an effect of lowering down manufacturing cost and simplifying operations can be achieved. And, through application of lift-off technique, only one mask is necessary to obtain patterned source electrode, drain electrode, and gate electrode.

(36) Based on the description given above, those having ordinary skills in the art may easily contemplate various changes and modifications of he technical solution and the technical ideas of the present invention. All these changes and modifications are considered belonging to the protection scope of the present invention as defined in the appended claims.