Wideband oxygen sensing
10067034 ยท 2018-09-04
Assignee
Inventors
Cpc classification
F01N2560/025
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F02D41/2416
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F01N2560/20
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F02D41/1445
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F02D41/2438
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F01N11/007
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
G01N33/0016
PHYSICS
F02D41/1446
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F02D41/1458
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
International classification
G01K7/42
PHYSICS
F02D41/14
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F02D41/24
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F01N11/00
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
Abstract
An oxygen sensor that has both an n-type oxygen sensing portion comprising an n-type semiconductor layer and a p-type oxygen sensing portion comprising an p-type semiconductor layer. The n-type sensing portion and the p-type sensing portion share the common electrode. The n-type semiconductor layer and the p-type semiconductor layer attach directly to the common electrode, but are not in physical contact with each other such that a lateral gap exists between the n-type semiconductor layer and the p-type semiconductor layer. The air:fuel ratio for a combustion process may be determined, using the same oxygen sensor, across a range of air:fuel values in both the rich and lean regions; as such, the oxygen sensor may act as a wideband oxygen sensor.
Claims
1. A wideband oxygen sensor, comprising: a substrate, the substrate being dielectric; a first common electrode affixed to the substrate and having first and second combs disposed on respective first and second lateral sides of the first common electrode, each having a plurality of fingers; a first sensing electrode affixed to the substrate and disposed on the first lateral side of the first common electrode in spaced relation thereto; a second sensing electrode affixed to the substrate and disposed on the second lateral side of the first common electrode in spaced relation thereto; a first semiconductor bridge, comprising an n-type semiconducting material, disposed so as to interconnect the first comb and the first sensing electrode, wherein the first semiconductor bridge is attached directly to the first common electrode; a second semiconductor bridge, comprising a p-type semiconducting material, disposed in spaced relation to the n-type semiconducting material and disposed so as to interconnect the second comb and the second sensing electrode; wherein the second semiconductor bridge is attached directly to the first common electrode and not in physical contact with the first semiconductor bridge; wherein the first and second semiconductor bridges are separated from each other by a lateral gap.
2. The wideband oxygen sensor of claim 1, further comprising: a first porous dielectric protective layer covering the n-type semiconducting material; a second porous dielectric protective layer covering the p-type semiconducting material.
3. The wideband oxygen sensor of claim 2, wherein the first porous dielectric layer comprises one or more catalytic precious metals and cerium oxide.
4. The wideband oxygen sensor of claim 1, further comprising a heater portion affixed to the substrate in spaced relation to the first common electrode and electrically insulated from the n-type semiconducting material and the p-type semiconducting material.
5. The wideband oxygen sensor of claim 4: wherein the first common electrode comprises a first terminal; wherein the first sensing electrode comprises a second terminal; wherein the second sensing electrode comprises a third terminal; wherein the heater portion comprises a fourth terminal.
6. The wideband oxygen sensor of claim 5, wherein first terminal is operatively connected to the heater portion.
7. The wideband oxygen sensor of claim 4: wherein the dielectric substrate has first and second oppositely facing surfaces; wherein the heater portion is disposed on the first surface of the substrate; wherein the first common electrode and both the first and second sensing electrodes are disposed closer to the second surface of the substrate than to the heater portion.
8. The wideband oxygen sensor of claim 4, wherein the heater portion comprises platinum.
9. The wideband oxygen sensor of claim 4: wherein the first common electrode is disposed on the substrate; wherein the first sensing electrode is disposed on the substrate; wherein the second sensing electrode is disposed on the substrate; wherein the heater portion is affixed to the substrate in spaced relation to the electrodes.
10. A wideband oxygen sensor, comprising: a substrate, the substrate being dielectric; a first common electrode affixed to the substrate; an n-type oxygen sensing portion comprising an n-type semiconductor layer; a p-type oxygen sensing portion comprising an p-type semiconductor layer; wherein the n-type sensing portion and the p-type sensing portion share the first common electrode; wherein the n-type semiconductor layer and the p-type semiconductor layer attach directly to the first common electrode, but are not in physical contact with each other such that a lateral gap exists between the n-type semiconductor layer and the p-type semiconductor layer.
11. The wideband oxygen sensor of claim 10, further comprising: a first porous dielectric protective layer covering the n-type semiconducting material; a second porous dielectric protective layer covering the p-type semiconducting material.
12. The wideband oxygen sensor of claim 10, further comprising a heater portion affixed to the substrate in spaced relation to the first common electrode and electrically insulated from the n-type oxygen sensing portion and the p-type oxygen sensing portion.
13. The wideband oxygen sensor of claim 12: wherein the dielectric substrate has first and second oppositely facing surfaces; wherein the heater portion is disposed on the first surface of the substrate; wherein the first common electrode and both the n-type oxygen sensing portion and the p-type oxygen sensing portion are disposed closer to the second surface of the substrate than to the heater portion.
14. The wideband oxygen sensor of claim 12, wherein the heater portion comprises platinum.
15. A sensor system, comprising: a wideband oxygen sensor, the wideband oxygen sensor comprising: a substrate, the substrate being dielectric; a first common electrode affixed to the substrate; an n-type oxygen sensing portion comprising an n-type semiconductor layer; a p-type oxygen sensing portion comprising an p-type semiconductor layer; wherein the n-type sensing portion and the p-type sensing portion share the first common electrode; wherein the n-type semiconductor layer and the p-type semiconductor layer attach directly to the first common electrode, but are not in physical contact with each other such that a lateral gap exists between the n-type semiconductor layer and the p-type semiconductor layer; connecting circuits operatively connected to the first common electrode, the n-type semiconductor layer, and the p-type semiconductor layer, the connecting circuits comprising: a constant current source; a first pair of resistors connected in series between the n-type semiconductor layer and the constant current source; a second pair of resistors connected in series between the p-type semiconductor layer and the constant current source; an n-type sensing circuit and a p-type sensing circuit; wherein the n-type sensing circuit comprises the n-type sensing portion, the constant current source, and the first pair of resistors; wherein the p-type sensing circuit comprises the p-type sensing portion, the constant current source, and the second pair of resistors.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
DETAILED DESCRIPTION
(10) In one or more embodiments, the present application is directed to a method of determining an air:fuel ratio based on information from an oxygen sensor exposed to exhaust gases of a combustion process, and related systems. A constant current is supplied to an oxygen sensor that has both an n-type sensing circuit and a p-type sensing circuit that share a common electrode. A first current in the n-type sensing circuit is determined, and a second current in the p-type sensing circuit is determined. In addition, a temperature value representative of a temperature of the oxygen sensor is determined. Then, a first value representative of the air:fuel ratio is determined based on the determined currents and the temperature value. The combustion process may then be controlled based on the first value representative of the air:fuel ratio. The air:fuel ratio may be determined, using the same oxygen sensor, across a range of air:fuel values in both the rich and lean regions; as such, the oxygen sensor may be referred to as a wideband oxygen sensor.
(11) For simplicity, the discussion below may generally be in the context of an oxygen sensor for a small displacement gasoline powered internal combustion engine, but it should be understood that the oxygen sensor(s) disclosed herein may be used in other internal combustion engine applications, such a hydrogen powered engines, other hydrocarbon powered engines, diesel engines, Homogeneous Charge Compression Ignition (HCCI) engines, and Reactivity Controlled Compression Ignition (RCCI) engines. Further, the disclosed method(s) may be used with other combustion processes, such as, for example, those found in furnaces and water heaters.
(12)
(13) The oxygen sensor 50 is advantageously a resistive-based oxygen sensor. With reference to
(14) An n-type metal oxide semiconductor layer 56 is placed over combs 66,74 so that the layer 56 forms a semiconductor bridge between the first sensing electrode 70 and the common electrode 62. Likewise a p-type metal oxide semiconductor layer 58 is placed over combs 68,84 so that the layer 58 forms a semiconductor bridge between the second sensing electrode 80 and the common electrode 62. Note that layer 56 and layer 58 should be isolated from each other (no contact). The layers 56,58 are advantageously sintered to the their respective electrodes to ensure good physical and electrical contact. Relevant to the discussion below, it should be understood that an n-type semiconductor has a resistance that is significantly lower and has a positive relationship with oxygen content when exposed to exhaust gases from a combustion process operating in the rich region, while the resistance is relatively high and may be uncorrelated to the oxygen content in the lean region. Conversely, a p-type semiconductor has a resistance that is significantly lower and has a positive relationship with oxygen content when exposed to exhaust gases from a combustion process operating in the lean region, while the resistance is relatively high and may be uncorrelated to the oxygen content in the rich region.
(15) A porous dielectric protective coating layer 59 may be placed over the semiconductor layers 56,58, and neighboring portions of the electrodes. This coating layer 59 may be on continuous coating layer over both semiconductor layers 56,58, with respective first and second portions, or the first portion 59a and second portion 59b may be distinct from each other. This coating layer 59 may include catalytic precious metal(s), such as platinum, and/or palladium, and/or rhodium, as well as oxygen storage components such as cerium oxide or other suitable material as may be necessary to achieve the desired functional characteristics of the oxygen sensing portion 60. These catalytic materials may be an initial part of the composition of the protective layer 59, or added as to impregnate the protective layer 59 in a subsequent operation.
(16) The optional heater portion 54 is advantageously disposed on an opposite side of the dielectric substrate 52 from the oxygen sensing portion 60. See
(17) The oxygen sensor 50 may have suitable connections for power and other signals. For example, in some embodiments, the oxygen sensor 50 has four contact pads or leads 55, 69, 79, 89 for making suitable connections. Lead 55 is electrically connected to the heater portion 54, and functions as a power (+) lead for the heater portion 54. Lead 69 is electrically connected to the common electrode 62, and acts as a ground (?) lead. Lead 79 is electrically connected to the first sensing electrode 70, and acts as the input to first sensing electrode 70. Lead 89 is electrically connected to the second sensing electrode 80, and acts as the input to second sensing electrode 80. Lead 69 may also function as a ground lead for heater portion 54, or there may be an additional lead (not shown) for a separate ground lead for heater portion 54.
(18) The oxygen sensor 50 is connected to the controller 32 so that the sensed oxygen level data from the sensor 50 is supplied to the controller 32. In order to facilitate this, the oxygen sensor 50 is, as shown in
(19) The connecting circuit 90 also includes a constant current source CC, which will be assumed to be powered using a nominal voltage of five volts or any other suitable power source that is available. The constant current source CC connects to the first sensing electrode 70 via resistors R.sub.1 and R.sub.2. The voltage drop V.sub.2 across resistor R.sub.2 is measured and provided by line L.sub.V2. The n-type sensing circuit 92 is completed to ground via first sensing electrode 70, semiconductor layer 56, and common electrode 62. The constant current source CC connects to the second sensing electrode 80 via resistors R.sub.3 and R.sub.4. The voltage drop V.sub.4 across resistor R.sub.4 is measured and provided by line L.sub.V4. The p-type sensing circuit 94 is completed to ground via second sensing electrode 80, semiconductor layer 58, and common electrode 62. Note that in alternate embodiments, resistor R.sub.1 and/or resistor R.sub.3 may be omitted from their respective circuits, or additional resistors may be added to their respective circuits.
(20) The connecting circuit 90 provides voltage drop V.sub.2 to the controller 32 via line L.sub.V2, voltage drop V.sub.HS to controller 32 via line L.sub.VHS, the actual voltage V.sub.S of voltage source VS.sub.1 to controller 32 via line L.sub.VS, and voltage drop V.sub.4 to the controller 32 via line L.sub.V4. The information provided by these lines allows the controller 32 to determine the oxygen level sensed by oxygen sensing portion 60, and thus the air:fuel ratio of the combustion process, as explained further below.
(21) The controller 32 may determine the air:fuel ratio based on the current I.sub.n flowing through the n-type sensing circuit 92, the current I.sub.p flowing through the p-type sensing circuit 94, and a value representative of the temperature of the oxygen sensor 50.
(22) The temperature of the oxygen sensor 50 may be determined based on the resistance of the heater portion 54. For example, the current I.sub.H in the heater portion 54 may be calculated as the voltage drop V.sub.HS across the shunt resistor R.sub.HS, divided by the resistance of the shunt resistor R.sub.HS, or I.sub.H=V.sub.HS/R.sub.HS. Then, the resistance R.sub.H of the heater portion 54 may be calculated based on the voltage drop across the heater portion 54 divided by the current I.sub.H through the heater portion 54. Thus, R.sub.H may be calculated as R.sub.H=(V.sub.S?V.sub.HS)/I.sub.H. Then, using R.sub.H, temperature T may be calculated using a suitable formula, for example T=(M?R.sub.H)+B, where the slope M and the constant B are dependent on the heater portion 54 design. As can be appreciated, M and B can be determined in a calibration process, and the relevant values stored in memory of the engine management system 30 for use by the controller 32.
(23) The present invention takes into account that the resistance response of the oxygen sensing portion 60 is temperature dependent. For example, the resistance of the n-type sensing circuit 92 at a given fixed air:fuel ratio in the rich region decreases with increasing temperature, even when the temperature is clearly high enough for a good response. Likewise, the resistance of the p-type sensing circuit 94 at a given fixed air:fuel ratio in the lean region decreases with increasing temperature, even when the temperature is clearly high enough for a good response. The decrease in resistance for a given voltage leads to an increase in current.
(24) The current I.sub.n in the n-type sensing circuit 92 may be calculated as I.sub.n=V.sub.2/R.sub.2, with R.sub.2 being value known to the controller 32. The current I.sub.p in the p-type sensing circuit 94 may be calculated as I.sub.p=V.sub.4/R.sub.4, with R.sub.4 being a value known to the controller 32. Note that the total current ICC from constant current source CC is by definition I.sub.n plus I.sub.p. With knowledge of both I.sub.n and I.sub.p, the controller 32 may determine the air:fuel ratio as a function of I.sub.n and I.sub.p, with the value of the air:fuel ratio varying in dependence on both I.sub.n and I.sub.p. Thus, the magnitude of the value of the air:fuel varies in dependence on all of I.sub.n, I.sub.p, and temperature T of the oxygen sensor 50, as described further below.
(25) In some embodiments, the air:fuel ratio is a function of the ratio of the natural log of I.sub.n to the natural log of I.sub.p, and temperature of the oxygen sensor 50. More particularly, ?=N?(In(I.sub.n)/In(I.sub.p))+C, or ?=N??+C, where ? is the ratio of the natural logs of the currents (i.e., ?=In(I.sub.n)/In(I.sub.p)). As shown in
(26) The controller 32 receives the inputs derived from the oxygen sensor 50 and other sensors, and advantageously controls the operation of the fuel metering, ignition timing, and other engine functions. Relevant to the present discussion and with reference to
(27) The discussion above has generally been in the context of the temperature of the oxygen sensor 50 being derived from the resistance of the heating portion 54 that is part of the oxygen sensor 50. Thus, the heating portion 54 fills two roles: heating the oxygen sensor 50 and sensing temperature thereof. However, in some embodiments, a temperature sensor distinct from the heating portion 54 may alternatively employed. Thus, the oxygen sensor 50 may include a thermocouple or other suitable temperature sensing device 51, in addition to the oxygen sensing portion 60 and the optional heating portion 54. Such a temperature sensor 51 is shown in
(28) The discussion above has generally been in the context of controlling an engine 10 having a single cylinder/combustion chamber. However, a similar approach may be used with engines having multiple cylinders, such as that shown in
(29) The discussion above has generally been in the context of the oxygen sensor 50 working in what may be referred to as a wideband mode, such that the oxygen sensor 50 is able to help determine oxygen levels in both the rich region and the lean region. In some embodiments, the oxygen sensor 50 may also temporarily operate as an n-type narrow-band sensor by, for example, disabling the p-type sensing circuit 94, and rely on data from the n-type sensing circuit 92 to sense when ? reaches 1.00 by the sudden step-type rise in resistance as A is increased. Or, alternatively, the oxygen sensor 50 may also temporarily operate as a p-type narrow-band sensor by, for example, disabling the n-type sensing circuit 92, and rely on data from the p-type sensing circuit 94 to sense when ? reaches 1.00 by the sudden step-type rise in resistance as ? is decreased.
(30) The discussion above has generally been in the context of an internal combustion engine; however, the present invention is not limited in application to internal combustion engines. Indeed, the oxygen sensing method described above can be used to control combustion processes generally. Thus, for example, the method(s) described herein may be used in combustion processes in a furnace or a water heater. As with the engine-based discussion above, the oxygen sensor 50 is disposed so as to sense exhaust gases in the exhaust plenum 19 from the combustion process.
(31) The methods and engine control systems discussed above provide the opportunity for enhanced combustion and/or engine control so that greater fuel economy and/or reduced emissions may be achieved.
(32) As used herein, an air:fuel ratio may be expressed as an un-normalized ratio (e.g., 14.7:1 for gasoline), or as a normalized ratio (e.g., ?).
(33) The disclosure of all patents and patent publications mentioned above are incorporated herein by reference in their entirety.
(34) The present invention may, of course, be carried out in other specific ways than those herein set forth without departing from the scope of the invention. The present embodiments are, therefore, to be considered as illustrative and not restrictive.