PRESSURE SENSOR AND MANUFACTURING METHOD THEREOF

Abstract

A pressure sensor and a manufacturing method thereof are provided. The pressure sensor includes a thin-film transistor (TFT) array and a pressure-sensitive layer covering the TFT array. The pressure-sensitive layer includes a plurality of insulating layers and one of one-dimensional materials arranged on the same plane and two-dimensional materials. The insulating layers and the one- or two-dimensional materials are alternately stacked so as to effectively enhance pressure resolution.

Claims

1. A pressure sensor, comprising: a thin-film transistor array; and a pressure-sensitive layer covering the thin-film transistor array, wherein the pressure-sensitive layer comprises a plurality of one-dimensional materials arranged on the same plane and a plurality of insulating layers, and the one-dimensional materials and the insulating layers are alternately stacked.

2. The pressure sensor of claim 1, wherein the pressure-sensitive layer is inductive resistive.

3. The pressure sensor of claim 1, wherein a diameter of the one-dimensional material is 5 nm to 100 mm.

4. The pressure sensor of claim 1, wherein an aspect ratio of the one-dimensional material is greater than 100.

5. The pressure sensor of claim 1, wherein the one-dimensional material comprises a metal nanowire, a carbon nanotube, or a metal oxide semiconductor.

6. The pressure sensor of claim 5, wherein a metal of the metal nanowire comprises gold, silver, or copper.

7. The pressure sensor of claim 5, wherein a metal oxide of the metal oxide semiconductor comprises zinc oxide, titanium oxide, tungsten oxide, molybdenum oxide, vanadium oxide, copper oxide, nickel oxide, cobalt oxide, iron oxide, or tin oxide.

8. A pressure sensor, comprising: a thin-film transistor array; and a pressure-sensitive layer covering the thin-film transistor array, wherein the pressure-sensitive layer comprises a plurality of two-dimensional materials and a plurality of insulating layers, and the two-dimensional materials and the insulating layers are alternately stacked.

9. The pressure sensor of claim 8, wherein the two-dimensional material comprises graphene oxide or molybdenum disulfide.

10. The pressure sensor of claim 8, wherein the pressure-sensitive layer is inductive resistive.

11. A manufacturing method of a pressure sensor, comprising: forming a thin-film transistor array; and teaming a pressure-sensitive layer on the thin-film transistor array by 3D printing, wherein the pressure-sensitive layer comprises a plurality of insulating layers and a plurality of one-dimensional materials arranged on the same plane that are alternately stacked, or the pressure-sensitive layer comprises the plurality of insulating layers and a plurality of two-dimensional materials that are alternately stacked.

12. The manufacturing method of the pressure sensor of claim 11, wherein a diameter of the one-dimensional material is 5 nm to 100 mm.

13. The manufacturing method of the pressure sensor of claim 11, wherein an aspect ratio of the one-dimensional material is greater than 100.

14. The manufacturing method of the pressure sensor of claim 11, wherein the one-dimensional material comprises a metal nanowire, a carbon nanotube, or a metal oxide semiconductor, and the two-dimensional material comprises graphene oxide or molybdenum disulfide.

15. The manufacturing method of the pressure sensor of claim 14, wherein a metal of the metal nanowire comprises gold, silver, or copper, and a metal oxide of the metal oxide semiconductor comprises zinc oxide, titanium oxide, tungsten oxide, molybdenum oxide, vanadium oxide, copper oxide, nickel oxide, cobalt oxide, iron oxide, or tin oxide.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.

[0020] FIG. 1 is a three-dimensional schematic diagram of a pressure sensor according to an embodiment of the invention.

[0021] FIG. 2A is a cross-sectional schematic diagram of the pressure sensor of FIG. 1 not under pressure.

[0022] FIG. 2B is a cross-sectional schematic diagram of the pressure sensor of FIG. 2A under pressure.

[0023] FIG. 3 is a manufacturing flow chart of a pressure sensor according to another embodiment of the invention.

DESCRIPTION OF THE EMBODIMENTS

[0024] FIG. 1 is a three-dimensional schematic diagram of a pressure sensor according to an embodiment of the invention.

[0025] Please refer to FIG. 1. A pressure sensor 100 of the present embodiment includes a thin-film transistor array 102 and a pressure-sensitive layer 104 covering the thin-film transistor array 102. The pressure-sensitive layer 104 is, for instance, inductive resistive.

[0026] Hereinafter, the detailed structure of the pressure sensor of FIG. 1 and embodiments thereof are exemplarily described with reference to FIG. 2A and FIG. 2B.

[0027] Please refer first to FIG. 2A. The pressure sensor 100 of the present embodiment includes a thin-film transistor array 102 and a pressure-sensitive layer 104 covering the thin-film transistor array 102. The pressure-sensitive layer 104 includes a plurality of one-dimensional materials 206 arranged on the same plane and a plurality of insulating layers 208, and the one-dimensional materials 206 and the insulating layers 208 are alternately stacked, such that the one-dimensional materials 206 between the layers are not in contact with one another.

[0028] In the present embodiment, the diameter of the one-dimensional material is generally 5 nm to 100 nm, preferably 20 nm to 80 nm, and more preferably 40 nm to 60 nm. Moreover, in terms of good conductivity, the length of the one-dimensional material is not particularly limited provided the aspect ratio of the one-dimensional material is greater than 100. For instance, the one-dimensional material may include a metal nanowire, a carbon nanotube, or a metal oxide semiconductor. The metal of the metal nanowire may include gold, silver, or copper, but is not limited thereto. The metal oxide of the metal oxide semiconductor may include zinc oxide, titanium oxide, tungsten oxide, molybdenum oxide, vanadium oxide, copper oxide, nickel oxide, cobalt oxide, iron oxide, or tin oxide, but is not limited thereto.

[0029] In FIG. 2A and FIG. 2B, for ease of illustration, only two adjacent thin-film transistor elements (a first thin-film transistor element 210 and a second thin-film transistor element 212) are shown, but it should be understood that, the thin-film transistor array may contain more thin-film transistor elements and is not limited to the quantity shown in FIG. 2A or FIG. 2B.

[0030] When pressure is not applied, as shown in FIG. 2A, since the one-dimensional materials 206 on the first thin-film transistor element 210 and the second thin-film transistor element 212 are separated by the insulating layers 208, current is not readily transferred between the one-dimensional materials 206, and therefore the one-dimensional materials 206 are in high-resistance state. When a pressure 214 is applied to a region of the first thin-film transistor element 210, as shown in FIG. 2B, the distances between the one-dimensional materials 206 are decreased due to the deformation of the pressure-sensitive layer 104 on the first thin-film transistor element 210 from pressure. As a result, current is readily transferred between the one-dimensional materials 206, such that the resistance of the pressure-sensitive layer 104 is reduced. Moreover, although the pressure-sensitive layer 104 on the second thin-film transistor element 212 is also deformed due to the pressure 214, even if deformation occurs, the one-dimensional materials 206 having directionality do not readily come in contact with one another since the pressure-sensitive layer 104 is not directly located on the point of application. Therefore, in the pressure-sensitive layer 104, the region 216 away from the point of application still has high resistance. Therefore, in comparison to conventional pressure sensor in which the pressure-sensitive layer contains conductive particles, the invention may provide better pressure resolution and may be applied in a pressure image sensing technique such as fingerprint recognition or foot pressure sensing, but is not limited thereto. The invention may be applied in any situation requiring pressure sensing.

[0031] Moreover, the one-dimensional materials 206 may also be replaced by two-dimensional materials (not shown) such that a pressure-sensitive layer is formed by the alternate stacking of the two-dimensional materials and the insulating layers 208. The two-dimensional materials may include, for instance, graphene oxide or molybdenum disulfide (MoS.sub.2), but is not limited thereto. The structure of the two-dimensional materials may also be alternately stacked with the insulating layers 208 to prevent contact of the two-dimensional materials between the layers. Therefore, the embodiment thereof is similar to that of the one-dimensional materials and is therefore not repeated herein.

[0032] Hereinafter, the manufacturing method of the pressure sensor according to another embodiment of the invention is described. Please refer to FIG. 3.

[0033] First, step 300 is performed to form a TFT (thin-film transistor) array, and the method of forming the TFT array may adopt any known manufacturing method.

[0034] Then, step 302 is performed to form a pressure-sensitive layer on the TFT array by 3D printing, wherein the pressure-sensitive layer includes insulating layers and one-dimensional materials arranged on the same plane, and the insulating layers and the one-dimensional materials are alternately stacked. In other embodiment, the pressure-sensitive layer includes insulating layers and two-dimensional materials, and the insulating layers and the two-dimensional materials are alternately stacked. The one-dimensional materials and the two-dimensional materials are as described in each of the embodiments above and are therefore not repeated herein. When the pressure-sensitive layer is a one-dimensional material, the insulating layers and the one-dimensional materials are alternately formed on the TFT array, and therefore the one-dimensional materials between the layers do not come in contact in the absence of pressure, and current is transferred between the one-dimensional materials only after the pressure-sensitive layer is subjected to a certain amount of pressure to change (reduce) the resistance of the pressure sensor.

[0035] When the pressure-sensitive layer includes two-dimensional materials, the insulating layers and the two-dimensional materials are similarly alternately formed on the TFT array, and the results thereof are the same as those of the pressure-sensitive layer formed by one-dimensional materials.

[0036] Moreover, in addition to the 3D printing, the method of forming the pressure-sensitive layer may also adopt a manufacturing method suitable for roll-to-roll such as screen printing or gravure printing.

[0037] Based on the above, in the pressure sensor of the invention, by alternately stacking the plurality of one-dimensional materials arranged on the same plane and the insulating layers or alternately stacking the plurality of two-dimensional materials and the insulating layers in the pressure-sensitive layer, the pressure resolution of the pressure sensor may be enhanced. The reason is that, current transfer between the one-dimensional materials or two-dimensional materials has directionality, and therefore in comparison to conventional pressure sensor in which the pressure-sensitive layer contains conductive particles, the invention may provide better pressure resolution.

[0038] Although the invention has been described with reference to the above embodiments, it will be apparent to one of ordinary skill in the art that modifications to the described embodiments may be made without departing from the spirit of the invention. Accordingly, the scope of the invention is defined by the attached claims not by the above detailed descriptions.