SOUND-ASSISTED CRACK PROPAGATION FOR SEMICONDUCTOR WAFERING
20230102291 · 2023-03-30
Inventors
Cpc classification
B26F3/002
PERFORMING OPERATIONS; TRANSPORTING
H01L21/78
ELECTRICITY
G01N29/045
PHYSICS
B26D7/086
PERFORMING OPERATIONS; TRANSPORTING
C03B33/033
CHEMISTRY; METALLURGY
International classification
B28D5/04
PERFORMING OPERATIONS; TRANSPORTING
B26D7/08
PERFORMING OPERATIONS; TRANSPORTING
B26F3/00
PERFORMING OPERATIONS; TRANSPORTING
C03B33/033
CHEMISTRY; METALLURGY
H01L21/02
ELECTRICITY
Abstract
Systems and methods are described for controlled crack propagation in a material using ultrasonic waves. A first stress in applied to the material such that the first stress is below a critical point of the material and is insufficient to initiate cracking of the material. A controlled ultrasound wave is then applied to the material causing the total stress applied at a crack tip in the material to exceed the critical point. In some implementations, the controlled cracking is used for wafering of a material.
Claims
1-20. (canceled)
21. A sound-assisted cleaving system comprising: a holder to hold a material; a first stress system configured to apply a first stress to the material; a first ultrasound source; and an electronic controller communicatively coupled to the first ultrasound source, the electronic controller configured to: apply a first ultrasound wave from the first ultrasound source to the material to propagate cracking of the material, and control a velocity of the cracking of the material by adjusting parameters of the first ultrasound wave applied to the material.
22. The sound-assisted cleaving system of claim 21, wherein the holder comprises a clamp.
23. The sound-assisted cleaving system of claim 21, wherein the first stress system regulates temperature of the material.
24. The sound-assisted cleaving system of claim 21, wherein the first stress system applies a mechanical load to the material.
25. The sound-assisted cleaving system of claim 24, further comprising a second ultrasound source communicatively coupled to the electronic controller.
26. The sound-assisted cleaving system of claim 21, further comprising a crack initiator to generate an indentation in the material.
27. The sound-assisted cleaving system of claim 26, wherein the crack initiator comprises a laser.
28. The sound-assisted cleaving system of claim 26, wherein the crack initiator comprises an indenter.
29. The sound-assisted cleaving system of claim 21, wherein the first ultrasound source includes a transducer to transmit the first ultrasound wave into the material.
30. The sound-assisted cleaving system of claim 21, further comprising a second ultrasound source communicatively coupled to the electronic controller, the second ultrasound source configured to apply a second ultrasound wave into the material.
31. The sound-assisted cleaving system of claim 30, wherein the first ultrasound source and the second ultrasound source are operable at the same or different frequencies.
32. The sound-assisted cleaving system of claim 30, further comprising an absorbing material applied to the material to absorb the ultrasound wave as the ultrasound wave reaches an edge of the material.
33. The sound-assisted cleaving system of claim 32, wherein the absorbing material surrounds a perimeter of the material.
34. The sound-assisted cleaving system of claim 21, further comprising: a crack initiator to create an indentation in the material; and an absorbing material to absorb the ultrasound wave as the ultrasound wave reaches an edge of the material.
35. The sound-assisted cleaving system of claim 21: further comprising a laser to create an indentation in the material; wherein the first stress system regulates temperature of the material; and wherein the first ultrasound source includes a transducer to transmit the first ultrasound wave into the material.
36. The sound-assisted cleaving system of claim 35, wherein the electronic controller includes a second ultrasound source to transmit a second ultrasound wave into the material, wherein the first ultrasound source and the second ultrasound source are operable at the same or different frequencies.
37. The sound-assisted cleaving system of claim 35, further comprising an absorbing material applied to the material to absorb the first ultrasound wave as the first ultrasound wave reaches an edge of the material, wherein the absorbing material surrounds a perimeter of the material.
38. The sound-assisted cleaving system of claim 21: further comprising a laser to create an indentation in the material; wherein the first stress system applies a mechanical load to the material; and wherein the first ultrasound source includes a transducer to transmit the first ultrasound wave into the material.
39. The sound-assisted cleaving system of claim 38, wherein the first stress system is communicatively coupled to a second ultrasound source.
40. The sound-assisted cleaving system of claim 39, further comprising an absorbing material applied to the material to absorb the first ultrasound wave as the first ultrasound wave reaches an edge of the material, wherein the absorbing material surrounds a perimeter of the material.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0014]
[0015]
[0016]
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[0018]
[0019]
[0020]
[0021]
[0022]
DETAILED DESCRIPTION
[0023] Before any embodiments of the invention are explained in detail, it is to be understood that the invention is not limited in its application to the details of construction and the arrangement of components set forth in the following description or illustrated in the following drawings. The invention is capable of other embodiments and of being practiced or of being carried out in various ways.
[0024]
[0025]
[0026] The initial load L (as illustrated in
[0027] Alternatively, the initial load could be applied to obtain a stress that is just above a critical value for the material 101. This initial stress causes spontaneous crack propagation in the material 101. The ultrasound source 103 is then controlled to modulate the stress at the crack tip to remain at a value just above the critical value.
[0028]
[0029] In some embodiments, such as illustrated in
[0030] After crack propagation begins, the speed and direction of the crack propagation can be regulated by controlling the amplitude and frequency of the ultrasonic waves and, in some implementations, the position of the ultrasound source. The frequency is controlled to provoke tensile stress at the crack tip such that the acoustic frequency causes bonds in the crack plane to oscillate and stretch. The amplitude is set to create a focalized stress center at the crack tip, which ultimately controls the speed of crack propagation.
[0031] Even though the system is able to control the propagation of the crack through the material, in some implementations, the interaction of reflected waves with the crack tip could cause undesirable or uneven results. In order to prevent this, mitigating measures are applied to prevent the waves emitted by the crack tip and by the ultrasound source from being reflected back into the material when they reach the edges of the specimen. In some implementations, this is achieved by backing the solid with a damping or absorbing material of an appropriate acoustic impedance. As such, when the waves reach the edge of the solid, they are transmitted into the absorbing materials and completely damped. Consequently, no waves are reflected back to the material that could alter smooth propagation of the crack. Because the reflected wave's frequency will depend on the velocity of the crack and the properties of the solid such as the elastic modulus, the type of damping material may vary for different types of solids.
[0032]
[0033] The propagation of the crack can be regulated in a number of different ways using the ultrasonic source.
[0034] It is noted that the flowchart presented in
[0035]
[0036] Finally, the table below illustrates examples of values determined for different materials as glass, silicon, or sapphire. In these examples, equation (1) below can be used for the critical stress necessary to start a crack propagation:
where E=Young modulus; γ=Surface energy; α=Initial crack length.
TABLE-US-00001 TABLE 1 E γ a σ.sub.C (GPa) (J/m.sup.2) (μm) (MPa) Glass 7-17 0.3-4.4 70 5-20 Silicon <100> 130 2.16 70 50 Sapphire 335 6-40 70 135-350
[0037] In some implementations, the surface roughness of the material at the location of the propagated crack depends not only on the velocity of the propagating crack but also on the value of the stress intensity factor, K. The stress intensity factor is indicative of a state of the stress field around a propagating crack tip and it can be modeled using finite element analysis, FEA. As the crack propagates, the K values can go below a critical value, K.sub.IC, and arrest the crack front. Low-roughness areas will be produced on the material surface where the K-value is only slightly above the critical value K.sub.IC. Therefore, in some implementations, a substantially uniform, low-roughness surface can be created by operating the ultrasound source to maintain a difference be K-value and the K.sub.ICthat is as low as possible.
[0038]
[0039] After the crack starts propagating, the speed of the crack accelerates until it reaches a constant value or is decelerated (either naturally or due to modulation applied by the ultrasound source). In some implementation, this acceleration is not desired because, as discussed above, a constant velocity provides a smoother surface at the crack. Accordingly, in some implementations, the controller is configured to operate the ultrasound source to maintain a crack velocity within certain defined limits and to maintain a K-value that is slightly above the K.sub.IC. Applying ultrasound waves with higher frequencies will provide a higher effect on the propagation than those ultrasound waves at lower frequencies. Also, the effect that the ultrasound wave will have on the crack propagation can vary depending on the position of the ultrasound source with respect to the crack tip. Accordingly, in some such implementations, the velocity, stress intensity, and trajectory of the crack propagation can be regulated by controllably adjusting parameters of the ultrasound waves including, for example, the frequency, amplitude, shape, and power.
[0040] Thus, the invention provides, among other things, a system and method for wafering a material (such as glass, silicon, or sapphire) using controlled crack propagation by applying sound waves. Various features and advantages of the invention are set forth in the following claims.