Switch with hysteresis
11575379 · 2023-02-07
Assignee
Inventors
Cpc classification
H03K17/693
ELECTRICITY
H03K2217/0072
ELECTRICITY
International classification
H03K17/693
ELECTRICITY
H02M3/158
ELECTRICITY
Abstract
Switch circuitry including an input terminal (1), said input terminal connected to the base of a first transistor (Q1) via a first resistor (R3), said first transistor being an NPN Bipolar Gate Transistor (Q1), said circuitry further comprising a second resistor (R5) connected between the base of said first transistor (Q1) and ground, and including an output line or terminal (3) connected to the collector of said first transistor (Q1), and wherein the emitter of said first transistor (Q1) is connected to ground (earth), said circuitry further including a second transistor (Q2), said second transistor being a PNP Bipolar Gate Transistor, wherein the collector of said second transistor (Q2) is connected via a third resistor (R8) to the base of said first transistor (Q1), and the emitter of said second transistor (Q2) is connected to said input terminal (1), and wherein the emitter of said second transistor (Q2) is additionally connected to the base of said second transistor (Q2) via a fourth resistor (R11); and the base of said second transistor (Q2) being additionally connected to the output terminal (3) via a fifth resistor (R10) and a diode (D1).
Claims
1. Switch circuitry comprising an input terminal (1), said input terminal connected to the base of a first transistor (Q1) via a first resistor (R3), said first transistor being an NPN Bipolar Gate Transistor (Q1), said circuitry further comprising a second resistor (R5) connected between the base of said first transistor (Q1) and ground, and including an output line or terminal (3) connected to the collector of said first transistor (Q1), and wherein the emitter of said first transistor (Q1) is connected to said ground (earth), said circuitry further including a second transistor (Q2), said second transistor being a PNP Bipolar Gate Transistor, wherein the collector of said second transistor (Q2) is connected via a third resistor (R8) to the base of said first transistor (Q1), and the emitter of said second transistor (Q2) is connected to said input terminal (1), and wherein the emitter of said second transistor (Q2) is additionally connected to the base of said second transistor (Q2) via a fourth resistor (R11); and the base of said second transistor (Q2) being additionally connected to the output terminal (3) via a fifth resistor (R10) and a diode (D1).
2. Circuitry as claimed in claim 1, wherein said diode (D1) is electrically connected between said fourth resistor (R10) and said output line or terminal (3).
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The present invention is now described by way of example with reference to the accompanying drawings in which:
(2)
(3)
(4)
(5)
DESCRIPTION OF THE PREFERRED EMBODIMENTS
(6)
(7) As mentioned, this circuit has no hysteresis so in a typical open collector NPN switch below there is no Schmitt trigger or hysteresis. Noise on the input can toggle the switch on and off means it can be unstable.
(8) A known solution is to use add a comparator for to add hysteresis.
(9) Invention
(10) In one example, the circuitry provides a switch with hysteresis which is efficient and reliable.
(11) In addition, the circuit includes a further BJT designated Q2 which is a PNP transistor. The collector of Q2 is connected via a resistor R8 to the base of Q1, and the emitter of Q2 is connected to the input line/terminal 1. The emitter of Q2 is also connected to the base of Q2 via resistor R11; the base of Q2 also being connected to the output terminal via a resistor R10 and a diode D1; diode D1 being located between resistor R10 and output line/terminal 3. Optionally the positions of the resistor R10 and diode may be interchanged ie. The resistor R10 may be located (i.e. electrically connected between the diode and terminal 3.
(12) So, the circuitry effectively provides a Schmitt trigger switch by adding a second BJT Q2 which is a PNP BJT, as well as resistors R8, R11, R10 and a diode.
(13) Operation
(14) Input voltage rises to threshold voltage just enough to turn on Q1 through R3. When Q1 turns on, it will also turn on Q2 through R10 and diode. When Q2 turns on, more current is provided to the base of Q1 through R8. This forces the Q1 to “turn on” state. This enhances the turn on current to base of Q1.
(15) Operation
(16)
(17) As Q1 NPN turns on (output voltage go to zero), the Q1 NPN base voltage shoots up from 0.5V to 0.7V. This is a result of Q2 providing more current to the base. In this example, the turn on voltage (low to high) is 6.2V and the turn off voltage (high to low) is 2.8V. Threshold voltage and hysteresis range can be adjusted by adjusting the resistance values (of which resistors).