Anti-plasma adhesive tape and manufacturing method

Abstract

An anti-plasma adhesive tape utilized for manufacturing a semiconductor package includes a substrate; and an adhesive layer formed on the substrate, wherein the adhesive layer is selected from a group composed of acrylic adhesive, light-curable resin and photoinitiator. The anti-plasma adhesive tape is attached to a backside of a lead frame of the semiconductor package before a plasma-cleaning process and removed from the lead frame after a molding process. After the anti-plasma adhesive tape is cured by irradiating an energy ray and removed from the lead frame, there is no residual adhesive left on a molding compound of the semiconductor package.

Claims

1. A manufacturing method of a semiconductor package, the method comprising: attaching an anti-plasma adhesive tape to a first side of a lead frame, wherein the anti-plasma adhesive tape comprises an adhesive layer, the lead frame comprises a die pad and leads, and gaps are formed between the die pad and the leads; mounting a die on a second side of the lead frame; curing a first part of the adhesive layer directly under the gaps by irradiating an energy ray toward a second side of the lead frame, wherein a second part of the adhesive layer which is directly under the lead frame is not cured, and the second side of the lead frame is opposite to the first side of the lead frame; cleaning the die and the lead frame using a plasma gas after curing the parts of the anti-plasma adhesive tape and before a molding process, wherein cleaning the die and the lead frame using the plasma gas is configured to clean dust or particles on the lead frame; performing the molding process on the die and the lead frame; and removing the anti-plasma adhesive tape after the lead frame is sealed with the molding compound after the molding process, wherein right after the anti-plasma adhesive tape is removed from the lead frame, there is no residual adhesive left on a molding compound of the semiconductor package and no cleaning process is required to clean out the residual adhesive; wherein the adhesive layer comprises a light-curable material, the light-curable material is selected from a group composed of acrylic adhesive, light-curable resin and photoinitiator; wherein the light-curable resin is ultraviolet curable resin; and wherein composition ratios corresponding to the adhesive layer of ingredients by weight percentage of each component are as follows: acrylic adhesive is 50-95%, light-curable resin is 1-30%, and photoinitiator is 1-30%.

2. The manufacturing method of claim 1, further comprising: curing the anti-plasma adhesive tape by irradiating an energy ray toward the anti-plasma adhesive tape.

3. The manufacturing method of claim 2, wherein the energy ray is ultraviolet.

4. The manufacturing method of claim 1, wherein the plasma gas is selected from a group composed of Oxygen (O.sub.2), Argon (Ar) and Hydrogen (H.sub.2).

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a schematic diagram of an anti-plasma adhesive tape according to an embodiment of the present invention.

(2) FIGS. 2-9 illustrate a process of manufacturing the semiconductor package.

(3) FIG. 10 illustrates a sectional side view of a semiconductor package performing a de-taping process.

DETAILED DESCRIPTION

(4) Please refer to FIG. 1, which is a schematic diagram of an anti-plasma adhesive tape 10 according to an embodiment of the present invention. The anti-plasma adhesive tape 10 is utilized for manufacturing a semiconductor package comprising a lead frame, e.g., a quad flat no lead package (QFN). The anti-plasma adhesive tape 10 is attached to a backside of the lead frame of the semiconductor package before a molding process of manufacturing the semiconductor package and removed from the lead frame after the molding process, so as to prevent a molding compound from leaking to the backside of the lead frame. Notably, the semiconductor package has to be cleaned using a plasma gas (via a plasma cleaning process) before the molding process. The anti-plasma adhesive tape 10 is capable of being free from residual adhesive caused by the plasma cleaning process, so as to have a better quality of the manufactured semiconductor package.

(5) The anti-plasma adhesive tape 10 comprises a release film 100, an adhesive layer 102 and a substrate 104. The release film 100 is on the adhesive layer 102, and removed/released before the anti-plasma adhesive tape 10 is attached to the lead frame. The adhesive layer 102, formed on the substrate 104, is made of a light-curable material which is selected from a group composed of acrylic adhesive, light-curable resin and photoinitiator. The light-curable resin may be ultraviolet (UV) curable resin. Composition ratios corresponding to the adhesive layer 102 of ingredients by weight percentage of each component are: acrylic adhesive is 50-95%, light-curable resin is 1-30%, and photoinitiator is 1-30%. The adhesive layer 102 may be cured by irradiating an energy ray before the plasma-cleaning process, where the energy ray may be UV, or a wavelength of the energy ray is between 200-450 nanometers (nm). The cured adhesive layer would hardly have reactions with the plasma gas, and an adhesiveness between the adhesive layer 102 and the molding compound is insufficient. Therefore, when the adhesive layer 102 is released/removed from the lead frame, there is no residual adhesive left on the molding compound of the semiconductor package.

(6) Specifically, please refer to FIGS. 2-9, which illustrate a process of manufacturing the semiconductor package. Referring to FIG. 2, in which a taping process is performed. The release film 100 is removed/released before the anti-plasma adhesive tape 10 is attached to a lead frame LF. The lead frame LF comprises a die pad PD and leads LD. Except the release film 100, the adhesive layer 102 and the substrate 104 are attached to a backside of the lead frame LF, i.e., attached to a backside of the leads LD and the die pad PD. Gaps GP are denoted as gaps between the leads LD and the die pad PD. Referring to FIG. 3, in which a die bonding process is performed, a die DE is mounted on a top-side of the die pad PD of the lead frame LF.

(7) Referring to FIG. 4, in which a curing process is performed. Part of the adhesive layer 102, within the gaps GP between the leads LD and the die pad PD, is irradiated by UV and cured, such that cured adhesive layers 102 is formed within the gaps GP between the leads LD and the die pad PD. Referring to FIG. 5, in which a plasma-cleaning process is performed. Dust or particles on the die DE and the lead frame LF are cleaned by molecules or atoms AT of the plasma gas, where AT denotes the molecules or atoms of the plasma gas, and the plasma gas may be Oxygen (O.sub.2), Argon (Ar), Hydrogen (H.sub.2), or a mixture thereof. As performing the plasma-cleaning process, only the cured adhesive layers 102 would have contact with the plasma gas (which means that the rest of the adhesive layer 102 except the cured adhesive layers 102 would not have contact with the plasma gas). Notably, the cured adhesive layers 102 would hardly have reactions with the plasma gas.

(8) Referring to FIG. 6, in which a wire bonding process is performed. The wires WR are bonded between the die DE and the leads LD, establishing connects between the die DE and the leads LD. Referring to FIG. 7, in which the plasma-cleaning process is performed again. Similarly, dust or particles on the die DE, the lead frame LF and the bonding wires WR are rinsed/cleaned by the molecules or atoms AT of the plasma gas. Again, the cured adhesive layers 102 would hardly have reactions with the plasma gas.

(9) Referring to FIG. 8, in which a molding process is performed. The die DE, the bonding wires WR and the lead frame LF are sealed with molding compound MC, where the molding compound MC may be epoxy resin. The molding compound MC would be blocked by the anti-plasma adhesive tape 10 (except the release film 100) and would not leak to the backside of the lead frame. Referring to FIG. 9, in which a de-taping process is performed. The adhesive layer 102 and the substrate 104 of the anti-plasma adhesive tape 10 are removed.

(10) Notably, since the cured adhesive layers 102 would hardly have reactions with the plasma gas, an adhesiveness between the cured adhesive layers 102 and the molding compound MC is significantly reduced and insufficient. Thus, after the anti-plasma adhesive tape 10 is removed, there is no residual adhesive left on the molding compound MC of the semiconductor package. In addition, the anti-plasma adhesive tape 10 is customized for the manufacturing process including the plasma cleaning process. Without the plasma cleaning process, there is no residual adhesive. Compared to the prior art in which the plasma cleaning process is employed, since there is no residual adhesive left on the molding compound MC, there is no need to perform a waterjet cleaning process or a detergent cleaning process to clean out/eliminate the residual adhesive. Hence, a production cost of manufacturing the semiconductor package is reduced.

(11) Notably, the embodiments stated in the above are utilized for illustrating the concept of the present invention. Those skilled in the art may make modifications and alterations accordingly, and not limited herein. For example, the curing process is not limited to be performed after the die bonding process. The curing process may be performed before the die bonding process. As long as the part of the adhesive layer 102 within the gaps GP between the leads LD and the die pad PD is cured (i.e., the curing process is performed) before the plasma-cleaning process, requirements of the present invention are satisfied, which is within the scope of the present invention.

(12) In summary, the present invention utilizes the light-curable material (e.g., acrylic adhesive and/or light-curable resin) to form the adhesive layer of the anti-plasma adhesive tape, to prevent erosion of the adhesive layer caused by the plasma gas. Hence, as the anti-plasma adhesive tape is removed, there is no residual adhesive left on the molding compound of the semiconductor package, and no need for further waterjet cleaning or detergent cleaning accordingly. The production cost of manufacturing the semiconductor package is therefore reduced.

(13) Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.