RING-TYPE FIELD EFFECT TRANSISTOR FOR TERAHERTZ WAVE DETECTION, WHICH USES GATE METAL AS ANTENNA

Abstract

A ring-type FET may include a silicon base, a source formed on a portion of the silicon base through doping, a channel formed to encompass the source on a plane, a drain formed outside the channel, a dielectric layer formed on the source, the channel and the drain, and a gate provided on the dielectric layer, wherein a center of the source is spaced apart from a center of the channel, and the gate is formed of a metal material, disposed above the channel and configured to cover an upper face of the channel and overlap a portion of the source and a portion of the drain.

Claims

1. A ring-type field-effect transistor for detecting a terahertz wave using a gate metal as an antenna, the ring-type field-effect transistor comprising: a silicon base; a source formed on a portion of the silicon base through doping; a channel formed to encompass the source on a plane; a drain formed outside the channel; a dielectric layer formed on the source, the channel and the drain; and a gate provided on the dielectric layer, wherein a center of the source is spaced apart from a center of the channel, and the gate is formed of a metal material, disposed above the channel and configured to cover an upper face of the channel and overlap a portion of the source and a portion of the drain.

2. The ring-type field-effect transistor of claim 1, wherein the source is in a circular shape and the channel is in a ring shape.

3. The ring-type field-effect transistor of claim 2, wherein the gate is formed in the same shape as the channel, overlaps the source by a width of the source, and overlaps the drain by a width of the drain.

4. The ring-type field-effect transistor of claim 3, the width by which the gate overlaps the source is different from the width by which the gate overlaps the drain.

5. The ring-type field-effect transistor of claim 4, further comprising: a source metal disposed on an upper face of the source and electrically connected to the source.

6. The ring-type field-effect transistor of claim 5, wherein the source metal is in a circular shape and electrically separated from the gate.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0018] FIG. 1 is a cross-sectional view of a ring-type field-effect transistor (FET) for detecting a terahertz wave using a gate metal as an antenna according to the present invention,

[0019] FIG. 2 is a top view illustrating a source, a channel, and a drain of FIG. 1,

[0020] FIG. 3 illustrates an example of FIG. 2 to which a gate is added, and

[0021] FIG. 4 illustrates an example of FIG. 3 to which a source metal is added.

BEST MODE FOR CARRYING OUT THE INVENTION

[0022] Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout.

[0023] Referring to FIG. 1, a ring-type field-effect transistor (FET) 10 for detecting a terahertz wave using a gate metal as an antenna may include a source 11, a drain 12, a channel 13, a dielectric layer 14, and a gate 15 formed on a silicon base 1. Hereinafter, the ring-type FET 10 is also referred to as an FET 10.

[0024] An impurity may be doped into each of the source 11 and the drain 12. The dielectric layer 14 may be formed of a material generally applicable to an FET. The gate 15 may be formed of a metal to function as an antenna.

[0025] A terahertz electromagnetic wave may be applied to the gate 13. In this instance, a property of the terahertz electromagnetic wave applied by a voltage generated between the source 11 and the drain 12 may be detected.

[0026] Depending on examples, a source metal 16 may be formed on the source 11. The source metal 16 may be electrically connected to the source.

[0027] As illustrated in FIG. 2, the FET 10 may include the source 11 formed in a circular shape, and the channel 12 formed to encompass the source 11.

[0028] Similarly, the channel 12 may also be formed in the circular shape. A center of the source 11 and a center of the channel 12 may be located at different positions and thus, an asymmetry may be maximized.

[0029] Thus, the source 11 may be isolatedly provided, and an electrode may be connected via an upper face of the source 11. A cross-section of the source 11 may extend to a lower face of the base 1 such that the electrode is connected via a lower end as necessary.

[0030] Similarly, the channel 12 may also be formed in the circular shape. A center of the source 11 and a center of the channel 12 may be located at different positions and thus, an asymmetry may be maximized.

[0031] When a diameter of the source 11 is d1, a diameter of the channel 13 is d2, a minimum distance between an external diameter of the source 11 and an internal diameter of the channel 13 is Lg, and a maximum distance between the external diameter of the source 11 and the internal diameter of the channel 13 is L, d2 may be equal to a sum of d1, Lg, and L.

[0032] As such, in the FET 10, L may differ from Lg. When the center of the source 11 and the center of the channel 13 are differently located, the FET 10 may have a structure in which a difference in arrival distance of the charge from the source 11 to the drain 12 varies from Lg to L and thus, an electric field between the gate 15 and the source 11 may be enhanced.

[0033] As illustrated in FIG. 3, the gate 15 may be formed in the same shape as the channel 13, and may include a portion e1 overlapping the source 11 and a portion e2 overlapping the drain 12.

[0034] In this example, when the portion e1 is not equal to the portion e2, the asymmetry may increase. Also, when the portion e1 is similar to the portion e2 in size, an overall asymmetry may be secured based on the asymmetry of the shapes of the source 11 and the drain 12.

[0035] When the portions e1 and e2 are greater than 0, the asymmetry may also increase.

[0036] As the foregoing, since the gate 15 is formed in a ring shape, the gate 15 may be used as an antenna having isotropic characteristics with respect to a polarization of the terahertz wave. Thus, in contrast to the conventional FET, a separate antenna structure may not be required.

[0037] As illustrated in FIG. 4, when the source metal 16 is formed on the source 11, a characteristic impedance design may be applicable by adjusting a minimum distance dm between the source metal 16 and the gate 15 and thus, an impedance matching may be performed on the FET 10 at a lower end of the gate 15.

[0038] Through this, the gate 15 may be used as an antenna without need to use a separate antenna structure. Also, the asymmetric structure of the gate 15 may allow the terahertz wave to be concentrated between a short interval between the gate 15 and the source metal 16 and guide the terahertz wave asymmetrically entering the FET 10.

[0039] As described above, the ring-type FET 10 for detecting a terahertz wave using a gate metal as an antenna may be configured based on silicon process technology and thus, differentiated from a high-cost compound semiconductor having its own high quality. Therefore, an integration of the FET 10 with peripheral elements such as an antenna and an amplifier for an additional performance improvement is technically implementable. Also, high-sensitivity silicon-based large-area multi-pixel array type detector integration is implementable at low costs.

[0040] Although a few embodiments of the present invention have been shown and described, the present invention is not limited to the described embodiments. Instead, it would be appreciated by those skilled in the art that changes may be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.