Transmitarray unit cell for a reconfigurable antenna

Abstract

Unit cell including a receive antenna, a transmit antenna, and including first and second radiation surfaces separated from each other by a separation area, a phase-shift circuit comprising switches, each having an on, respectively off, state, wherein the corresponding switch allows, respectively blocks, the flowing of a current between the first and second radiation surfaces; a ground plane; a first printed circuit board including a first surface provided with the receive antenna, and a second opposite surface provided with the ground plane; a wafer of a semiconductor material including a first surface provide with first and second radiation surfaces and wherein the switches are formed in the separation area, monolithically with the transmit antenna.

Claims

1. A transmitarray unit cell for an antenna reconfigurable at an operating frequency, including: a receive patch antenna, intended to receive an incident wave; a transmit patch antenna intended to transmit the incident wave with a phase shift, and comprising first and second radiation surfaces separated from each other by a separation area so as to be electrically isolated; a phase-shift circuit configured to introduce the phase shift, and comprising switches, each having an on, respectively off, state, wherein the corresponding switch allows, respectively blocks, the flowing of a current between the first and second radiation surfaces of the transmit patch antenna; a ground plane having the receive patch antenna and the transmit patch antenna arranged on either side thereof; a first printed circuit board comprising a first surface provided with the receive patch antenna and a second opposite surface provided with the ground plane; a wafer of a semiconductor material, electrically isolated from the ground plane, and comprising a first surface provided with the first and second radiation surfaces of the transmit patch antenna; wherein the switches are formed at the first surface of the wafer, in the separation area, monolithically with the transmit patch antenna.

2. The transmitarray unit cell according to claim 1, including a second printed circuit board comprising a first surface assembled on the ground plane, and a second opposite surface; and wherein the wafer is assembled to the second surface of the second printed circuit board.

3. The transmitarray unit cell according to claim 2, including a substrate of a dielectric material assembled to the second surface of the second printed circuit board; and wherein the substrate includes a cavity shaped to receive the wafer.

4. The transmitarray unit cell according to claim 2, wherein the phase-shift circuit includes a first assembly of electrically-conductive tracks arranged at the second surface of the second printed circuit board to bias the switches.

5. The transmitarray unit cell according to claim 4, wherein the phase-shift circuit includes: a second assembly of electrically-conductive tracks, arranged at the first surface of the second printed circuit board to bias the switches; vias formed in the second printed circuit board to connect the first and second assemblies of electrically-conductive tracks.

6. The transmitarray unit cell according to claim 2, wherein the second surface of the second printed circuit board includes bump contacts; and wherein the wafer includes solder bumps soldered to the bump contacts to assemble the wafer to the second printed circuit board.

7. The transmitarray unit cell according to claim 6, wherein the phase-shift circuit includes a first assembly of electrically-conductive tracks arranged at the second surface of the second printed circuit board to bias the switches; wherein the bump contacts are electrically connected to the first assembly of electrically-conductive tracks, and wherein the switches are electrically connected to the solder bumps.

8. The transmitarray unit cell according to claim 2, wherein the second surface of the second printed circuit board includes at least one cavity formed opposite the transmit patch antenna.

9. The transmitarray unit cell according to claim 1, wherein each switch is a micro-electromechanical system including: a fixed actuation electrode, formed at the first surface of the wafer; a membrane, formed at the first radiation surface of the transmit patch antenna, and mobile between: a first position, corresponding to the on state, where the membrane is in contact with the second radiation surface of the transmit patch antenna; and a second position, corresponding to the off state, where the membrane is distant from the second radiation surface of the transmit patch antenna.

10. The transmitarray unit cell according to claim 9, including an encapsulation layer arranged to encapsulate each micro-electromechanical system, the encapsulation layer being formed monolithically with the corresponding micro-electromechanical system.

11. The transmitarray unit cell according to claim 1, wherein each switch includes: an electrically-conductive element comprising a first portion formed at the first surface of the wafer, in contact with the first radiation surface of the transmit patch antenna, and a second portion extending opposite the second radiation surface of the transmit patch antenna; a layer of a phase-change material, arranged between the second radiation surface of the transmit patch antenna and the second portion of the electrically-conductive element, the phase-change material having a crystal phase corresponding to the on state, and an amorphous phase corresponding to the off state.

12. The transmitarray unit cell according to claim 11, wherein the phase-change material is selected from the group comprising GeTe, Ge.sub.2Sb.sub.2Te.sub.5.

13. The transmitarray unit cell according to claim 1, wherein the wafer has a resistivity greater than or equal to 2,000 .Math.cm.

14. The transmitarray unit cell according to claim 1, wherein the semiconductor material of the wafer is based on silicon.

15. The transmitarray unit cell according to claim 1, wherein the operating frequency is in the range from 30 GHz to 110 GHz.

16. An antenna reconfigurable at an operating frequency, including a transmitarray comprising a plurality of transmitarray unit cells according to claim 1.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The foregoing and other features and advantages will be discussed in detail in the following non-limiting description of different embodiments of the invention, in connection with the accompanying drawings, among which:

(2) FIG. 1 is a simplified view of a reconfigurable antenna comprising a transmitarray,

(3) FIGS. 2a and 2b are simplified transverse cross-section views of a unit cell according to a first embodiment,

(4) FIGS. 3 and 4 are simplified transverse cross-section views illustrating two execution modes of the unit cell according to the first embodiment,

(5) FIGS. 5a and 5b are simplified transverse cross-section views of a unit cell according to a second embodiment,

(6) FIG. 6 is a partial simplified view, in transparency, of a unit cell according to the invention illustrating the transmit antenna,

(7) FIG. 7 is a partial simplified view of a unit cell according to the invention illustrating the receive antenna,

(8) FIGS. 8a to 8b are simplified cross-section views of two embodiments of switches,

(9) FIG. 9 is a simplified exploded perspective view of a plurality of unit cells according to an embodiment of the invention.

DETAILED DESCRIPTION OF THE EMBODIMENTS

(10) For the different embodiments, the same references will be used for identical elements or elements performing the same function, to simplify the description. The technical characteristics described hereafter for different embodiments are to be considered separately or according to any technically possible combination.

(11) FIGS. 1 to 7 illustrate a unit cell 1 of a transmitarray RT for an antenna reconfigurable at an operating frequency, preferably in the range from 30 GHz to 110 GHz.

(12) Unit cell 1 comprises:

(13) a receive patch antenna 2, intended to receive an incident wave E.sub.i;

(14) a transmit patch antenna 3 intended to transmit the incident wave E.sub.i with a phase shift (the phase-shifted transmitted wave E.sub.t being illustrated in FIG. 1), and comprising first and second radiation surfaces 30, 31 separated from each other by a separation area ZS (clearly apparent in FIG. 6) to be electrically isolated, transmit antenna 3 and receive antenna 2 being electrically connected to each other;

(15) a phase-shift circuit configured to introduce the phase shift, and comprising switches 4 each having an on, respectively off, state, wherein the corresponding switch 4 allows, respectively blocks, the flowing of a current between the first and second radiation surfaces 30, 31 of transmit antenna 3;

(16) a ground plane 5 having receive antenna 2 and transmit antenna 3 arranged on either side thereof;

(17) a first printed circuit board 6 comprising a first surface 60 provided with receive antenna 2, and a second opposite surface provided with ground plane 5.

(18) Unit cell 1 comprises a wafer 7 of a semiconductor material, electrically isolated from ground plane 5. Wafer 7 comprises a first surface 70 provided with the first and second radiation surfaces 30, 31 of transmit antenna 3. Switches 4 are formed at the first surface 70 of wafer 7, in separation area ZS, monolithically with transmit antenna 3. First surface 70 of wafer 7 is advantageously covered with a dielectric layer 700. Dielectric layer 700 is preferably an oxide of the semiconductor material. Wafer 7 advantageously has a resistivity greater than or equal to 2,000 .Math.cm. The semiconductor material of wafer 7 is preferably based on silicon. As an example, for a 60-GHz operating frequency, wafer 7 preferably has a thickness in the order of 100 m.

(19) Unit cell 1 advantageously comprises a second printed circuit board 9 comprising a first surface 90 assembled on ground plane 5, and a second opposite surface 91. Wafer 7 is assembled to second surface 91 of second board 9. In an embodiment, first surface 70 of wafer 7 is assembled to second surface 91 of second board 9. In an alternative embodiment (illustrated in FIGS. 5a and 5b), wafer 7 comprises a second surface 71 opposite to first surface 70, and second surface 71 of wafer 7 is assembled to second surface 91 of second board 9. Second surface 91 of second board 9 advantageously comprises at least one cavity 911 formed opposite transmit antenna 3. As an example, cavity or cavities 911 have a width in the order of 200 m. As an example of embodiment, first and second boards 6, 9 are of Rogers RO3003 type, with a relative permittivity equal to 3. As an example, for a 60-GHz operating frequency, first board 6 preferably has a thickness in the order of 250 m, and second board 9 preferably has a thickness in the order of 100 m. Unit cell 1 advantageously comprises an adhesive film interposed between first and second boards 6, 9.

(20) As illustrated in FIG. 1, transmitarray RT comprises at least one radiation source S preferably emitting in a spectral range from 30 GHz to 110 GHz, radiation source(s) S irradiating an assembly of unit cells 1.

(21) Receive antenna 2 is a patch antenna. As non-limiting examples, receive antenna 2 may be of square, rectangular, slot, circular, elliptic, triangular, spiral, or other type. Similarly, when receive antenna 2 is a slot antenna 20, slot 20 may for example have a U, rectangular, ring, circular, elliptic, or other shape. As illustrated in FIG. 7, receive antenna 2 is a U-shaped rectangular slot patch antenna 20.

(22) Transmit antenna 3 is a patch antenna. As illustrated in FIG. 6, first and second radiation surfaces 30, 31 are separate. A slot is advantageously formed in transmit antenna 3 to electrically isolate first and second radiation surfaces 30, 31. The slot defines separation area ZS. The slot is preferably ring-shaped with a rectangular cross-section. Of course, other shapes can be envisaged for the slot, such as an elliptic or circular shape. According to an alternative execution, the electric isolation of the first and second radiation surfaces 30, 31 may be ensured by a dielectric material.

(23) First and second radiation surfaces 30, 31 advantageously have an axis of symmetry to avoid degrading the polarization of transmitted wave E.sub.t by transmit antenna 3 by minimizing the excitation of unwanted resonance modes. First radiation surface 30 preferably forms a ring having a rectangular cross-section. Second radiation surface 31 preferably forms a rectangular strip. Second radiation surface 31 is advantageously enclosed in first radiation surface 30 to avoid the forming of parasitic currents. Additional radiation surfaces may advantageously be stacked on first and second radiation surfaces 30, 31 to increase the bandwidth of transmit antenna 3.

(24) Receive antenna 2 and transmit antenna 3 are advantageously rotatable with respect to each other to modify the polarization of incident wave E.sub.i. Thus, a rotation by 90 of transmit antenna 3 with respect to receive antenna 2 enables to pass, for example, from a vertical polarization of incident wave E; to a horizontal polarization of transmitted wave E.sub.t.

(25) Receive antenna 2 and transmit antenna 3 are electrically connected to each other, to be powered and coupled, partly via a main via 8, preferably central, preferably metallic. Main via 8 crosses an opening formed in ground plane 5. Main via 8 is not in contact with ground plane 5. As an example, for a 60-GHz operating frequency, main via 8 preferably has a diameter in the order of 100 m. Ground plane 5 forms an electromagnetic shielding between receive antenna 2 and transmit antenna 3. Preferably, receive antenna 2 is electrically connected to ground plane 5 via vias 80, preferably metallic. As an example, for a 60-GHz operating frequency, vias 80 preferably have a diameter in the order of 75 m. Main via 8 is preferably connected to receive antenna 2 by a first connection point (not shown). The connection point is advantageously located close to an edge of receive antenna 2 to avoid affecting the radiation thereof when receive antenna 2 is of square type. The connection point is advantageously located close to the center of receive antenna 2 when receive antenna 2 is of U-shaped slot type. Generally, the position of the connection point varies according to the specific geometry of receive antenna 2 to excite the fundamental resonance mode. Second surface 91 of second board 9 advantageously comprises bump contacts 910, 910. Wafer 7 advantageously comprises solder bumps B, preferably metallic, soldered to bump contacts 910, 910 to assemble wafer 7 to second board 9. Bump contacts 910 are advantageously located at the periphery of second surface 91 of second board 9 to ensure a good mechanical behavior of unit cell 1. Bump contacts 910 further ensure an electric connection in conjugation with solder bumps B. Main via 8 is preferably connected to transmit antenna 3 by a second connection point (not shown) via a solder bump B soldered to a bump contact 910. The second connection point is advantageously located close to the center of transmit antenna 3 to favor the fundamental resonance mode.

(26) As illustrated in FIG. 9, unit cell 1 advantageously comprises a substrate 10 of a dielectric material assembled to second surface 71 of the second board, and substrate 10 comprises a cavity 100 shaped to receive wafer 7. Thus, cavity 100 of substrate 10 and bump contacts 910, 910 provide a good alignment of wafer 7 relative to second printed circuit board 9.

(27) The phase-shift circuit advantageously comprises a first assembly of electrically-conductive tracks P1, arranged at second surface 91 of second board 9 to bias switches 4, and thus form means for controlling switches 4. Bump contacts 910 are advantageously electrically connected to the first assembly of electrically-conductive tracks P1. As illustrated in FIG. 4, the phase-shift circuit advantageously comprises: a second assembly of electrically-conductive tracks P2, arranged at first surface 90 of second board 9 to bias the switches, vias 92, preferably metallic, formed in second board 9 to connect the first and second assemblies of electrically-conductive tracks P1, P2.

(28) The phase-shift circuit advantageously comprises first and second transmission lines LT1, LT2 arranged at first surface 70 of wafer 7. First transmission lines LT1 are arranged to connect tracks P1 to switches 4 to be able to control switches 4. Second transmission lines LT2 are arranged in separation area ZS to transfer the ground to switches 4. When second surface 71 of wafer 7 is assembled to second surface 91 of second board 9, unit cell 1 advantageously comprises vias 72 formed in wafer 7, such as TSVs (through silicon vias) when the semiconductor material is based on silicon. Vias 72 are arranged to electrically connect the first and second transmission lines LT1, LT2 to the first assembly of tracks P1.

(29) The phase-shift circuit advantageously comprises two switches 4 arranged on either side of the second connection point in separation area ZS. The two switches 4 may form two independent components or a single SPDT-type component (Single Pole Double Throw), with one switched input and two switched outputs. Switches 4 are advantageously arranged to join first and second radiation surfaces 30, 31 to allow the flowing of a current between first and second radiation surfaces 30, 31 in the on state. Second radiation surface 31 advantageously has an area which is sufficiently small to avoid the occurrence of parasitic radiations and sufficiently large to convey the current from the second connection point to switches 4.

(30) Switches 4 are advantageously electrically connected to solder bumps B. Solder bumps B preferably have a diameter in the order of 100 m. The two switches 4 are advantageously alternately controlled so that, when one of switches 4 is in the on state, the other switch 4 is in the off state. Wave E.sub.t transmitted by transmit antenna 3 can thus be in phase with incident wave E.sub.i or phase-shifted by 180. Switches 4 are configured to excite transmit antenna 3 in phase or in phase opposition with receive antenna 2.

(31) According to an execution mode illustrated in FIG. 8a, each switch 4 is a micro-electromechanical system comprising: a fixed actuation electrode 400, formed at first surface 70 of wafer 7; a membrane 401, formed at first radiation surface 30 of transmit antenna 3, and mobile between:

(32) a first position, corresponding to the on state, where membrane 401 is in contact with second radiation surface 31 of transmit antenna 3; and

(33) a second position, corresponding to the off state, where membrane 401 is distant from second radiation surface 31 of transmit antenna 3.

(34) The switching from the off state to the on state is performed by applying a potential difference, preferably in the order of 30 V, between actuation electrode 400 and membrane 401. Actuation electrode 400 is made of an electrically-conductive material, preferably a metallic material such as Au. Membrane 401 is made of an electrically-conductive material, preferably a metallic material. The forming of the micro-electromechanical system may require using a first sacrificial layer 401a, for example, made of amorphous silicon, deposited on actuation electrode 400. First sacrificial layer 401a is locally etched to form an electric contact for the electrically-conductive material of actuation electrode 400. Elementary cell 1 advantageously comprises an encapsulation layer 40 arranged to encapsulate each micro-electromechanical system, encapsulation layer 40 being formed monolithically with the corresponding micro-electromechanical system. As an example, to achieve this, a second sacrificial layer 401b, such as a resist, is deposited on the corresponding micro-electromechanical system. Then, a silicon dioxide layer 404 is deposited on second sacrificial layer 401b. Holes are formed in layer 404 to remove first and second sacrificial layers 401a, 401b. Then, the holes are closed, for example, with a polymer material 405, preferably benzocyclobutene. Silicon dioxide layer 404 and polymer material 405 form encapsulation layer 40.

(35) According to an alternative embodiment illustrated in FIG. 8b, each switch 4 comprises: an electrically-conductive element 402 comprising a first portion 402a formed at first surface 70 of wafer 7, in contact with first radiation surface 30 of transmit antenna 3, and a second portion 402b extending opposite second radiation surface 31 of transmit antenna 3; a layer 403 of a phase-change material, arranged between second radiation surface 31 of transmit antenna 3 and second portion 402b of the electrically-conductive element 402, the phase-change material having a crystal phase corresponding to the on state, and an amorphous phase corresponding to the off state. Advantageously, the phase-change material is preferably selected from the group comprising GeTe, Ge.sub.2Sb.sub.2Te.sub.5. The reversible switching from the off state to the on state is performed under the effect of a thermal pulse applied by a current peak generating a Joule effect in the phase-change material.

(36) Other execution modes may be envisaged for switches 4. As non-limiting examples, radio switches 4 such as diodes, transistors, photodiodes, phototransistors are possible. The selection of a device to control switches 4 depends on the selected technology. As examples, the following devices may be used: an optical fiber for a switch 4 of photoelectric type, a laser beam generated by outer means and exciting a switch of photoelectric type, an electromagnetic wave according to the known principles of remote supply in the field of RFID (Radio Frequency Identification).