LEAD CARRIER STRUCTURE AND PACKAGES FORMED THEREFROM WITHOUT DIE ATTACH PADS
20180047588 ยท 2018-02-15
Assignee
Inventors
Cpc classification
H01L23/49579
ELECTRICITY
H01L2224/04
ELECTRICITY
H01L2924/00012
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2224/85695
ELECTRICITY
H01L23/49544
ELECTRICITY
H01L21/4821
ELECTRICITY
H01L2924/18301
ELECTRICITY
H01L24/97
ELECTRICITY
H01L2224/48106
ELECTRICITY
H01L2224/97
ELECTRICITY
H01L2224/04
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L21/568
ELECTRICITY
H01L2924/00012
ELECTRICITY
H01L2224/85695
ELECTRICITY
H01L21/4832
ELECTRICITY
H01L2224/97
ELECTRICITY
H01L2224/04026
ELECTRICITY
International classification
H01L21/48
ELECTRICITY
Abstract
A lead carrier includes a continuous sheet of mold compound having a top side and an opposing back side, and forms an array of package sites corresponding to semiconductor packages. Each package site when fabricated includes a semiconductor die having a top side, and an opposing treated base exposed at the back side of the continuous sheet of mold compound; a set of terminal pads, each having a top side and an opposing back side exposed at the back side of the continuous sheet of mold compound; a plurality of wire bonds formed between a set of input/output junctions on the top side of the semiconductor die and the top side of each terminal pad; and hardened mold compound encapsulating the semiconductor die, the set of terminal pads, and the plurality of wire bonds. Each package site excludes a die attach pad to which the semiconductor die is fixed.
Claims
1. A lead carrier for assembling packaged semiconductor die encapsulated in a mold compound, the lead carrier comprising: a continuous sheet of mold compound having a top side and an opposing back side, the continuous sheet of mold compound comprising an array of package sites, each package site corresponding to a semiconductor die package, each package site comprising: a semiconductor die having a top side and an opposing treated base that is exposed at the back side of the continuous sheet of mold compound; a set of terminal pads, each terminal pad having a top side and an opposing back side that is exposed at the back side of the continuous sheet of mold compound; a plurality of wire bonds formed between a set of input/output junctions on the top side of the semiconductor die and the top side of each terminal pad within the set of terminal pads; and hardened mold compound that encapsulates the semiconductor die, the set of terminal pads, and the plurality of wire bonds.
2. The lead carrier of claim 1, wherein each package site excludes a die attach pad to which the semiconductor die is fixed.
3. The lead carrier of claim 1, wherein the treated base of the semiconductor die comprises a coating of gold, platinum, silver, and/or an alloy thereof applied to a back side of the semiconductor die.
4. The lead carrier of claim 1, wherein at each package site the exposed treated base of the semiconductor die and the exposed back side of each terminal pad define surface mount junctions for the semiconductor die package corresponding to the package site.
5. The lead carrier of claim 1, further comprising a temporary support layer that supports the continuous sheet of mold compound, the temporary support layer having a top surface against which the bottom surface of the continuous sheet of mold compound resides.
6. The lead carrier of claim 5, further comprising at each package site a temporary adhesive layer disposed between the treated base of the semiconductor die and the top surface of the temporary support layer, wherein the temporary adhesive layer is removable from the treated base of the semiconductor die.
7. The lead carrier of claim 6, wherein the temporary adhesive layer comprises a conventional die attach material having a higher level of adhesion to the top surface of the temporary support layer than to the treated base of the semiconductor die.
8. The lead carrier of claim 6, wherein each terminal pad comprises a sintered material adhered to the top surface of the temporary support layer.
9. The lead carrier of claim 8, wherein each terminal pad has a height and a peripheral border, and wherein the peripheral border of at least one terminal pad includes an overhang region that causes an upper portion of the terminal bad to laterally extend beyond a lower portion of the terminal pad, and wherein the overhang region interlocks with the hardened mold compound to resist downward vertical displacement of the terminal pad from the hardened mold compound.
10. The lead carrier of claim 9, wherein at each package site a level of adhesion of each terminal pad to the top surface of the temporary support layer is less than a level of adhesion of the peripheral border of the terminal pad to the hardened mold compound.
11. The lead carrier of claim 10, wherein the temporary support layer is peelably removable from the continuous sheet of mold compound.
12. A semiconductor die package having a top side and an opposing back side, the semiconductor die package comprising: a semiconductor die having a top side and an opposing treated base that is exposed at the back side of the semiconductor die package; a set of terminal pads, each terminal pad having a top side and a back side that is exposed at the back side of the semiconductor die package; a plurality of wire bonds formed between a set of input/output junction on a top surface of the semiconductor die and the top surface of each terminal pad within the set of terminal pads; and hardened mold compound that encapsulates the semiconductor die, the set of terminal pads, and the plurality of wire bonds, wherein the semiconductor die package excludes a die attach pad to which the semiconductor die of the package site is fixed.
13. The semiconductor die package of claim 12, wherein the semiconductor die package is a Quad Flat No Lead (QFN) package.
14. The semiconductor die package of claim 12, wherein the treated base of the semiconductor die comprises a coating of gold, platinum, silver, and/or an alloy thereof applied to a back side of the semiconductor die.
15. The semiconductor die package of claim 12, wherein each terminal pad has a height and a peripheral border, and wherein the peripheral border of at least one terminal pad includes an overhang region that causes an upper portion of the terminal bad to laterally extend beyond a lower portion of the terminal pad, and wherein the overhang region interlocks with the hardened mold compound to resist downward vertical displacement of the terminal pad from the hardened mold compound.
16. A method for fabricating packaged semiconductor die by way of a lead carrier, the method comprising: providing a temporary support layer having a top side on which semiconductor die packages are to be assembled at corresponding package sites, each package site comprising a predetermined fractional area of the temporary support layer on the top side thereof, and having a die attach region therein; disposing a paste carrying a sinterable metal in a predetermined pattern on the top side of the temporary support layer; sintering the paste to form a set of terminal pads at each package site, each terminal pad having a top side and an opposing back side adhered to the temporary support layer, wherein the set of terminal pads is disposed outside of the die attach region of the package site in accordance with the predetermined pattern of the paste; at each package site, mounting a semiconductor die to the die attach region of the package site by disposing a temporary adhesive layer on the top surface of the temporary support layer in the die attach region and disposing a treated base of the semiconductor die on the temporary support layer such that the temporary adhesive layer is interposed between the treated base of the semiconductor die and the top surface of the temporary support layer; at each package site, selectively forming a plurality of wire bonds between a set of input/output terminals of a top side of the semiconductor die and top side of each terminal pad within the set of terminal pads; forming a continuous sheet of molded package sites by applying a mold compound across the package sites such that the semiconductor die, the set of terminal pads, and the plurality of wire bonds formed at each package site are encapsulated in the mold compound; peeling the temporary support layer away from the continuous sheet of molded package sites and removing the temporary adhesive layers from the treated bases of the semiconductor die of the continuous sheet of molded package sites; and separating individual package sites within the continuous sheet of molded package sites from each other to thereby form individual packages that each contain a selected semiconductor die and a selected set of terminal pads electrically coupled thereto, wherein each package includes a top side and an opposing bottom side at which the treated base of the selected semiconductor die and the bottom side of each terminal pad within the selected set of terminal pads of the package are exposed to thereby form surface mount junctions of the package.
17. The method of claim 16, further comprising at each package site avoiding providing a die attach pad on which the semiconductor die of the package site is fixable.
18. The method of claim 16, wherein at each package site, the temporary adhesive layer comprises a conventional die attach material having a higher level of adhesion to the top surface of the temporary support layer than to the treated base of the semiconductor die disposed at the package site.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0048]
[0049]
[0050]
[0051]
[0052]
[0053]
[0054]
[0055]
[0056]
[0057]
[0058]
[0059]
[0060]
DETAILED DESCRIPTION
[0061] Referring to the FIGs., wherein like reference numerals represent like parts throughout,
[0062] In various embodiments, the temporary support member 20 includes or is a thin planar high temperature resistant material, such as stainless steel. The temporary support member 20 includes a top surface 22 upon which other portions of the lead carrier 10 are fabricated, assembled, manufactured, as further detailed below. An edge 24 of the temporary support member 20 defines a perimeter of the temporary support member 20. In this representative embodiment, the temporary support member 20 is generally rectangular, although the temporary support member 20 can take other shapes in other embodiments.
[0063] The top surface 22 of the temporary support member 20 supports the plurality of package sites 12 thereon, with each package site 12 including at least one die attach region 30 plus at least one and typically a plurality of electrically conductive terminal pads 40 associated with or surrounding each die attach region 30. For instance, a plurality of die attach regions 30 and terminal pads 40 can be arrayed on the temporary support member 20 at package sites 12, with multiple terminal pads 40 surrounding each die attach region 30. A given die attach region 30 can thus be defined as a predetermined area within a particular package site 12 within which an integrated circuit chip 60 can be positioned or mounted on the temporary support member 20, such that the integrated circuit chip 60 is surrounded by corresponding terminal pads 40 of the package site 12 during the assembly or manufacture of packages 100 in accordance with embodiments of the present disclosure. Dashed lines Y in
[0064] For purpose of simplicity and to aid understanding, the representative embodiment shown in
[0065] For any given lead carrier 10, the terminal pads 40 of its package sites 12 can exhibit various geometries and locations, but the terminal pads 40 are typically formed of similar or identical material. In particular, the terminal pads 40 are typically formed of a sinterable/sintered electrically conductive material. According to a several embodiments, the terminal pads 40 include or begin as a powder of at least one electrically conductive material, for instance, silver, mixed with a suspension component, which includes an organic fluid, or combination of organic fluids, having between 5 and 25 weight percent of the electrically conductive material therein. This suspension component generally acts to give the silver powder a consistency of paste or other flowable and thixotropic characteristics, with viscosity ranging from 20 Pas to 50,000 Pas, so that the silver powder can best be handled, manoeuvred, and/or flowed to exhibit the desired geometry for the pads 40.
[0066] The suspension component including the silver powder are selectively applied to sites on the temporary support member 20 in a manner that defines the terminal pads 40, as further detailed with reference to
[0067] The temporary support member 20 is configured to have thermal characteristics such that it maintains its flexibility and desired degree of strength and other properties at least up to the sintering temperature of the electrically conductive material forming the pads 40. Typically, this sintering temperature is approaching the melting point for the metal powder that is sintered into the pads 40.
[0068] More particularly, with reference to
[0069] Lateral surfaces 82 of the temporary form material 80 define the boundaries or edges of voids 83 between areas occupied by the temporary form material 80. These voids 83 are filled with the mixture of the metal powder and suspension component by flowing this mixture into the voids 83, in the manner indicated in
[0070] A terminal pad 40 can have a variety of different sizes and geometries. In various embodiments, the terminal pad 40 includes a substantially planar top side 42, as shown in
[0071] An edge 46 of the terminal pad 40 defines a perimeter or peripheral shape of the terminal pad 40. This edge 46 is typically not oriented within a plane perpendicular to the temporary support member 20, but has a taper or otherwise is configured to be contoured so that at least a partial undercut or overhang exists with an upper extent of each edge 46 (i.e., further away from the top surface 22 of the temporary support member 20) overhanging a lower extent of each edge 46 (closer to or at the top surface 22 of the temporary support member 20). This overhang relationship can be continuous, such as by tapering the edge 46 in the manner shown in
[0072] During terminal pad 40 formation, the bottom side 44 of each terminal pad 40 resides or rests upon the top surface 22 of the temporary support member 20, in a manner shown in
[0073] After formation of the terminal pads 40, integrated circuit chips 60 can be positioned or mounted on the die attach regions 30 of the temporary support member 20 across the package sites 12 corresponding thereto, in a manner shown in
[0074] Once the integrated circuit chips 60 have been positioned or mounted on the die attach regions 30, as shown in
[0075] After wire bonds 50 have been formed between the input/output junctions 62 of the integrated circuit chips 62 and their corresponding terminal pads 40, a molding process is performed during which mold compound 70 is flowed over the entire top surface 22 of the lead carrier 10. The mold compound 70 is typically of a variety which will melt at a temperature and while held at the same temperature, will polymerize and solidify after a period of time ranging from 20 seconds to 200 seconds. The mold compound 70 is formed of a conventional non-conductive or substantially non-conductive material, such that the terminal pads 40 are electrically isolated from each other.
[0076] The mold compound completely encapsulates each of the terminal pads 40, wire bonds 50, and integrated circuit chips 60 across the package sites 12 of the lead carrier 10 above the top surface 22 of the temporary support member 20, in a manner indicated in
[0077] After the mold compound 70 has hardened, the hardened mold compound 70 and the structures encapsulated therein plus the temporary support member 20 can be defined as an assembled lead carrier 10. The temporary support member 20 can be peeled away from assembled lead carrier 10 in a manner indicated in
[0078] Individual packages 100 can be formed from the stand-alone molded lead carrier 10 by way of cutting or sawing the stand-alone molded lead carrier 10 along package site borders or boundaries (e.g., corresponding to dashed lines Y shown in
[0079] Beneficially, lead carriers 100 fabricated in accordance with embodiments of the present disclosure exclude shorting structures 6 and tie bars 2 found in prior art lead frames 1. Thus, packages 100 manufactured in accordance with embodiments of the present disclosure exclude tie bars 3 extending therein, the packages 100 need not have any unnecessary electrically conductive material extending therein or extending therefrom, in contrast to prior art QFN packages P. Packages 100 in accordance with embodiments of the present disclosure thus do not suffer from the same parasitic capacitance problems as prior art QFN packages P, and are suitable for use with integrated circuit chips 60 that operate at higher frequencies.
[0080] As indicated above, the edges of the terminal pads 40 have an overhanging or undercut profile. During the molding process, the mold compound 70 flows between each terminal pad 40 and its neighbouring terminal pads 40 and its corresponding integrated circuit chip 60. Due to the overhanging or undercut profile of the edges 46 of the terminal pads 40, the mold compound 70 effectively forms interlock structures or interlocks 72 that inherently structurally engage or mechanically self-engage the mold compound 70 with the edges 46 of the terminal pads 40 in a manner shown in
[0081] With reference to
[0082] In view of the foregoing, when the temporary support member 20 is removed from the assembled lead carrier 10, the temporary support member 20 separates cleanly from the mold compound 70 and the surface mount joints 90 of each terminal pad 40, but the temporary adhesive layer 35 remains attached to the temporary support member 20 and is removed cleanly from the base 66 of each integrated circuit chip 60. Thus, in any given package 100, the surface mount joints 90 of each terminal pad 40 and the base 66 of each integrated circuit chip 60 remain exposed after removal of the temporary support member 20, as indicated in
[0083] With reference to
[0084] The description herein is provided to reveal particular representative embodiments in accordance with the present disclosure. It will be apparent that various modifications can be made to the embodiments described herein without departing from the scope of the present disclosure, or the claims included herewith.