Semiconductor device and method of manufacturing semiconductor device

Abstract

A semiconductor device including: a semiconductor substrate; a seed layer that is formed on the semiconductor substrate; and wiring that is formed on the seed layer and includes parallel row portions that are arranged at intervals from each other, and in which penetration passages that penetrate the parallel row portions in a direction in which the parallel rows lined up are formed in the parallel row portions.

Claims

1. A method of manufacturing a semiconductor device comprising: forming a seed layer on a semiconductor substrate; coating resist on the seed layer; placing on the resist a mask component having a light shading portion that exposes the resist using a wiring pattern that represents a configuration of wiring while covering other portions of the resist, and linear portions that, when the configuration of the wiring is looked at in plan view, cover the resist over parallel row portions that are lined up at intervals from each other; forming a resist pattern in which, while leaving the wiring pattern open by exposing the resist using the mask component, the resists that are lined up at intervals from each other so as to correspond to the parallel row portions are connected together linearly in a bottom portion of the openings by the linear portions; forming wiring in the locations that have been opened by removing the resist from the seed layer in the resist pattern; and removing the seed layer by etching.

2. The method of manufacturing a semiconductor device according to claim 1, wherein the linear portions are formed as single linear bodies having a width that is less than a resolution limit of an exposure device.

3. The method of manufacturing a semiconductor device according to claim 1, wherein the linear portions include a plurality of linear bodies that have a width that is less than the resolution limit of the exposure device, and are disposed at intervals from each other that are narrower than the resolution limit.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) Exemplary embodiments of the present disclosure will be described in detail based on the following figures, wherein:

(2) FIG. 1 is a plan view showing a mask component in an example of a method of manufacturing a semiconductor device according to a first exemplary embodiment of the present disclosure;

(3) FIG. 2 is a plan view showing a state after photolithography has been performed in the example of the method of manufacturing a semiconductor device according to the first exemplary embodiment of the present disclosure;

(4) FIG. 3A is a cross-sectional view at a position of a line C-C shown in FIG. 2 after Cu plating has been performed from the state shown in FIG. 2 in the example of the method of manufacturing a semiconductor device according to the first exemplary embodiment of the present disclosure;

(5) FIG. 3B is a cross-sectional view at a position of a line D-D shown in FIG. 2 after Cu plating has been performed from the state shown in FIG. 2;

(6) FIG. 4A is a cross-sectional view at the position of the line C-C shown in FIG. 2 when resist has been removed in the example of the method of manufacturing a semiconductor device according to the first exemplary embodiment of the present disclosure;

(7) FIG. 4B is a cross-sectional view at the position of the line D-D shown in FIG. 2 when resist has been removed;

(8) FIG. 5 is a cross-sectional view showing a state after etching of a Cu seed layer has been performed in the example of the method of manufacturing a semiconductor device according to the first exemplary embodiment of the present disclosure;

(9) FIG. 6 is a plan view showing a mask component in an example of a method of manufacturing a semiconductor device according to a second exemplary embodiment of the present disclosure;

(10) FIG. 7 is a plan view showing a state after photolithography has been performed in the example of the method of manufacturing a semiconductor device according to the second exemplary embodiment of the present disclosure;

(11) FIG. 8A is a cross-sectional view at a position of a line E-E shown in FIG. 7 after Cu plating has been performed from the state shown in FIG. 7 in the example of the method of manufacturing a semiconductor device according to the second exemplary embodiment of the present disclosure;

(12) FIG. 8B is a cross-sectional view at a position of a line F-F shown in FIG. 7 after Cu plating has been performed from the state shown in FIG. 7;

(13) FIG. 9A is a cross-sectional view at the position of the line E-E shown in FIG. 7 when resist has been removed in the example of the method of manufacturing a semiconductor device according to the second exemplary embodiment of the present disclosure;

(14) FIG. 9B is a cross-sectional view at the position of the line F-F shown in FIG. 7 when resist has been removed;

(15) FIG. 10 is a cross-sectional view showing a state after etching of a Cu seed layer has been performed in the example of the method of manufacturing a semiconductor device according to the second exemplary embodiment of the present disclosure;

(16) FIG. 11 is a cross-sectional view showing a state in which a seed layer is provided on a semiconductor substrate in an example of a method of manufacturing a semiconductor device according to a conventional exemplary embodiment;

(17) FIG. 12 is a cross-sectional view showing a state in which resist has been coated in the example of the method of manufacturing a semiconductor device according to the conventional exemplary embodiment;

(18) FIG. 13 is a cross-sectional view showing a state after resist has been exposed in the example of the method of manufacturing a semiconductor device according to the conventional exemplary embodiment;

(19) FIG. 14 is a cross-sectional view showing a state in which wiring has been provided via an electroplating process in the example of the method of manufacturing a semiconductor device according to the conventional exemplary embodiment;

(20) FIG. 15 is a cross-sectional view showing a state after resist has been removed in the example of the method of manufacturing a semiconductor device according to the conventional exemplary embodiment;

(21) FIG. 16 is a cross-sectional view showing a state after etching of a Cu seed layer has been performed in the example of the method of manufacturing a semiconductor device according to the conventional exemplary embodiment;

(22) FIG. 17 is a cross-sectional view showing a state after etching of a Ti seed layer has been performed in the example of the method of manufacturing a semiconductor device according to the conventional exemplary embodiment; and

(23) FIG. 18 is a plan view showing an inductor area in the example of the method of manufacturing a semiconductor device according to the conventional exemplary embodiment.

DETAILED DESCRIPTION

First Exemplary Embodiment

(24) Hereinafter, a first exemplary embodiment of the present disclosure will be described with reference to the drawings. Note that, in each of the drawings, the same reference symbols are used to indicate component elements or portions that are essentially the same as or equivalent to each other.

(25) Moreover, in the present specification, in a case in which a numerical range is expressed using the symbol [-], then this means that the range contains the numbers used before and after the [-] as a lower limit value and an upper limit value.

(26) In the present specification, an expression above a structure A is not only used for cases in which an object is positioned above, and in contact with the structure A, but may also be used for cases in which an object is located above the structure A via a separate structure B.

(27) FIG. 1 is a plan view showing a mask component 80 which is used in a photolithographic process in a method of manufacturing a semiconductor device 10 according to an exemplary embodiment of the present disclosure.

(28) The mask component 80 shown in the drawings is only a representative portion of the entire mask component 80.

(29) The mask component 80 is formed by light shielding portions 85 that do not allow light from an exposure device used in photolithography to be transmitted, and transmitting portions 86 that do allow this light to be transmitted.

(30) The transmitting portions 86 are formed in order to expose resist 40 using a wiring pattern that represents a configuration of wiring 60. The light shielding portions 85 are formed in order to cover portions of the resist 40 other than the portions thereof that are to be exposed by the transmitting portions 86.

(31) More specifically, the mask component 80 shown in FIG. 1 is used to form the wiring 60 which is formed by plating Cu 42 (described below) in an inductor area.

(32) The three transmitting portions 86 shown in the center in FIG. 1 are used to form the wiring 60 of the inductor area (described below). Linear portions 82 are formed extending to the left and right in the center of the mask component 80 shown in FIG. 1.

(33) The linear portions 82 are used to form penetration passages 70 within the wiring 60 that is made from the plating Cu 42 (described below). A width T of the linear portions 82 is set to a width that is less than a resolution limit (what is known as a minimum line width) of the exposure device (what is known as a 1 projection exposure device of a semiconductor manufacturing device) used in the photolithographic process to manufacture the semiconductor device 10. In the present exemplary embodiment, the width T is set to 1-2 m.

(34) In a typical method used to form conventional embedded type wiring, in the same way as was described using FIG. 11, a Ti seed layer 20 is formed on a semiconductor substrate 11, and a Cu seed layer 30 is formed on this Ti seed layer 20. In addition, in the same way as was described using FIG. 12, resist 40 is coated to a predetermined thickness onto the Cu seed layer 30, and then, using the mask component 80 shown in FIG. 1, employing photolithography, the resist 40 is exposed using the aforementioned exposure device, and the exposed resist 40 is then removed. As a result, a state such as that shown in plan view in FIG. 2 is obtained. The linear resists 83 are formed by the above-described linear portions 82.

(35) In the state after this photolithography which is shown in the plan view in FIG. 2, if Cu plating is carried out via an electroplating method, then as is shown in the cross-sectional view in FIG. 3, the plating Cu 42 fills the interiors of opening grooves 50. Note that, in the present specification, a downward-facing direction as seen in the cross-sectional diagrams corresponds to the direction of gravity.

(36) A cross-sectional view at a position of a line C-C shown in FIG. 2 after the Cu plating has been performed from the state shown in FIG. 2 is shown in FIG. 3A, while a cross-sectional view at a position of a line D-D shown in FIG. 2 after the Cu plating has been performed from the state shown in FIG. 2 is shown in FIG. 3B.

(37) The plating Cu 42 that has filled the interior of the opening grooves 50 forms the wiring 60 in the inductor area.

(38) The linear resists 83 that are formed by the linear portions 82 remain on top of the Cu seed layer 30 in the lower portion of the wiring 60 extending in a direction that is orthogonal to (i.e., that intersects) the longitudinal direction of the wiring 60 (i.e., the direction in which the wiring 60 extends). As a result of these linear resists 83 remaining, the plating Cu 42 does not fill the interior of the wiring 60 that is formed by the plating Cu 42, and instead of this, the penetration passages 70 (described below) are formed as tunnel-shaped cavities.

(39) From the states shown in FIG. 3A and FIG. 3B, the resist 40 is then removed using an organic solvent or the like. As a result, as is shown in FIG. 4A, the wiring 60 which includes parallel row portions that are lined up at intervals from each other is formed on the Cu seed layer 30 by the plating Cu 42. By then removing the linear resists 83 that penetrate the parallel row portions in the direction in which the parallel rows are lined up next to each other, the penetration passages 70 that are the internal portions of the wiring 60 which is formed by the plating Cu 42, and that penetrate the wiring 60 in a direction that is orthogonal to (i.e., that intersects) the longitudinal direction of the wiring 60 (i.e., the direction in which the wiring 60 extends) on the Cu seed layer 30, in other words, that penetrate the parallel row portions of the plating Cu 42, which are lined up at intervals from each other, in the direction in which the parallel rows are lined up next to each other. As a result, an inductor area is formed by the wiring 60 having the penetration passages 70. Note that the wiring 60 may be formed in a variety of configurations such as a stretched configuration, a curved configuration, or a bent configuration. Among these, the parallel row portions correspond to the portions indicated by the reference number 42 in FIG. 3.

(40) From the states shown in FIG. 4A and FIG. 4B, the Cu seed layer 30 is removed via wet etching using an etching solution. In the present exemplary embodiment, for example, an acid-based solution having sulfuric acid as its principal constituent is used for the etching solution, however, provided that the solution is able to remove the Cu seed layer 30, then it is not particularly restricted.

(41) Here, in the method of manufacturing the semiconductor device 10 according to the present exemplary embodiment shown in FIG. 4A and FIG. 4B as well, the width W of the intervals between mutually adjacent wiring 60 forming the inductor area is narrow, in the same way as was described for the conventional technology shown in FIG. 16, however, as is shown in FIG. 5, by forming the penetration passages 70 that are shaped as tunnels that penetrate the lower portion of the wiring 60 in a direction that is orthogonal to (i.e., that intersects) the longitudinal direction of the wiring 60 (i.e., the direction in which the wiring 60 extends), there is no residual dissolution material such as in the conventional technology described in FIG. 16. Accordingly, a flow of fluid such as etching solution and the like is generated during the wet etching in the left-right directions and up-down directions shown in FIG. 5, and dissolution material, such as that described in the case of the conventional technology, is discharged to the outside by the flow of this fluid, and it is possible to prevent residual dissolution material from accumulating in the narrow spaces between mutually adjacent wiring 60.

(42) In the mask component 80 according to the present exemplary embodiment, as is described above, the width T of the linear portions 82 that are used to form the penetration passages 70 is set, for example, to 1-2 m.

(43) By using the above-described type of mask component 80, the semiconductor device 10 according to the present exemplary embodiment is formed such that the height of the penetration passages 70 is not less than 10% and not more than 15% of the height of the plating Cu 42 forming the wiring 60.

(44) According to the present exemplary embodiment, if the height of the penetration passages 70 is less than 10% of the height of the wiring 60, then the ability of the etching fluid to flow through the penetration passages 70 is reduced, and dissolution material as well as Cu residue ends up accumulating between mutually adjacent wiring 60.

(45) If, on the other hand, the height of the penetration passages 70 exceeds 15% of the height of the wiring 60, then the resistance value of the wiring 60 increases in conjunction with the reduction in the cross-sectional area of the wiring 60.

(46) The intervals between the penetration passages 70 in the longitudinal direction (i.e., the extension direction) of the wiring 60 in the semiconductor device 10 according to the present exemplary embodiment are formed such that, in an inductor area such as that shown in FIG. 18, compared with areas in which the lengths of wiring 60, which have been arranged in parallel rows, are formed so as to be rectilinear (more specifically, in areas other than the area H shown by the single-dot chain line in FIG. 18), in corner locations where the lengths of wiring 60, which are arranged in parallel rows, are bent at right angles (more specifically, in the area H shown by the single-dot chain line in FIG. 18) the placement intervals between adjacent penetration passages 70 is narrow relative to the longitudinal direction (i.e., the extension direction) of the wiring 60 so that the distribution density of the penetration passages 70 is higher.

(47) This structure is employed so that, in locations where the longitudinal direction (i.e., the extension direction) of the lengths of wiring 60, which are arranged in parallel rows, is formed so as to be rectilinear (more specifically, in areas other than the area H shown by the single-dot chain line in FIG. 18), the flow of fluid such as etching solution that is used for etching during dry etching and the like is also not obstructed, and dissolution material between the wiring 60 is able to be easily discharged. In contrast, in corner portions such as the corner locations where the lengths of wiring 60, which are arranged in parallel rows, are bent at right angles (more specifically, in the area H shown by the single-dot chain line in FIG. 18), the flow of fluid such as etching solution that is used for etching during dry etching and the like is obstructed by the corner portions, and there is a tendency for residual dissolution material residue to accumulate between mutually adjacent wiring 60. Because of this, in the corner locations of the wiring 60 (i.e., in the area H shown by the single-dot chain line), by narrowing the spacing between the penetration passages 70 so that they are distributed extremely densely, it is possible to facilitate the flow of the etching fluid and to inhibit any dissolution material residue from remaining between mutually adjacent wiring 60.

(48) In the semiconductor device 10 and the method of manufacturing the same according to the present exemplary embodiment, by employing a structure such as that described above, effects and actions such as those described below can be demonstrated.

(49) According to the present exemplary embodiment, as a result of the wiring 60 that has the parallel row portions which are arranged in rows at a distance from each other being provided with the penetration passages 70 that penetrate the parallel row portions in the direction in which the parallel rows are lined up next to each other, when the etching of the Cu seed layer 30 is being performed, the fluid used for the etching flows through the penetration passages 70 as far as the interior of the narrow spaces between mutually adjacent wiring 60 so that the fluid is able to properly flow (circulate) through these spaces. Consequently, residual dissolution material can be prevented from accumulating in these spaces. As a result, it is possible to reduce any deterioration in the etching rate that is caused by residual dissolution material accumulating in the narrow spaces between the mutually adjacent wiring 60.

(50) According to the present exemplary embodiment, by forming a seed layer (i.e., the Ti seed layer 20 or the Cu seed layer 30) on the semiconductor substrate 11 and then coating resist 40 onto the seed layer, it is possible, by employing photolithography, to form a resist pattern in the resist 40 on the seed layer using the mask component 80 that partially exposes the resist 40.

(51) Here, the mask component 80 has the light shielding portions 85 that, in order to expose the resist 40 using a wiring pattern that represents the configuration of the wiring 60, cover all the other portions of the resist 40, and the linear portions 82 that, when the configuration of the wiring 60 is looked at in plan view, cover a predetermined width (more specifically, a width that is less than the resolution limit of the exposure device) of the resist 40 over parallel row portions that are lined up at intervals from each other.

(52) By exposing the resist 40 using the above-described type of mask component 80, a resist pattern is formed in which, at the same time as the wiring pattern is opened up, bottom portions of the openings between resists 40 that are lined up at intervals from each other so as to correspond to the parallel row portions are connected together linearly.

(53) Moreover, by forming the wiring 60 using an electroplating method from the plating Cu 42 in the locations that have been opened up as a result of the resist 40 being removed from on top of the seed layer in the resist pattern, and then performing wet etching so as to remove the seed layer, it is possible to form the wiring 60 on the semiconductor substrate 11.

(54) According to the present exemplary embodiment, as a result of the linear portions 82 being formed as a single linear body having a width that is less than the resolution limit of the exposure device, it is possible to form linear resists 40 having a desired height using the linear portions 82. Using these linear resists 40, the penetration passages 70 that penetrate parallel row portions of the wiring 60, which are lined up at intervals from each other, in the direction in which these parallel rows are lined up adjacently to each other can be formed.

(55) According to the present exemplary embodiment, by forming the penetration passages 70 that penetrate parallel row portions of the wiring 60, which are lined up at intervals from each other, in the direction in which these parallel rows are lined up adjacently to each other, a fluid such as etching solution and the like that is used during etching flows through the penetration passages 70 so that residual dissolution material is prevented from accumulating between mutually adjacent wiring 60, and any reduction in the etching rate between mutually adjacent wiring 60 is also prevented, and Cu residue can be prevented from accumulating between mutually adjacent wiring 60. As a result, it is possible to prevent such Cu residue from acting as a mask and obstructing the etching of the seed layer, so that a superior etching performance can be obtained.

(56) By making it possible to obtain a superior etching performance, there is no need for etching to be performed excessively. As a result, it is possible to prevent defects such as the width of the wiring 60 being reduced by excessive etching from occurring.

Second Exemplary Embodiment

(57) As is shown in FIG. 1, in the first exemplary embodiment, in order to form a single penetration passage 70, a single linear portion 82 is formed using the mask component 80, however, in the present exemplary embodiment, by arranging a plurality of linear portions 82 having a narrower width than those of the first exemplary embodiment (more specifically, a width of approximately 0.5 m, which width is less than the resolution limit) in parallel rows at intervals from each other that are less than this resolution limit, penetration passages 70 such as those shown in FIG. 7 through FIG. 9B that have a larger width than those of the first exemplary embodiment are formed.

(58) More specifically, as is shown in FIG. 6, by using a mask component 80 in which a plurality of linear bodies 82a whose width is less than the resolution limit are arranged in parallel rows at intervals from each other that are smaller than this resolution limit, as is shown in the plan view in FIG. 7, after performing photolithography using this mask component 80 linear resists 83 are formed whose width is wider than in the first exemplary embodiment.

(59) In the same way as in the first exemplary embodiment, if Cu plating is performed using an electroplating method in the state shown in FIG. 7 after the photolithography has been performed, then as is shown in the cross-sectional views in FIG. 8A and FIG. 8B, the Cu plating 42 fills the interior of the opening grooves 50.

(60) A cross-section at the position of the line E-E in FIG. 7 after the Cu plating has been performed from the state shown in FIG. 7 is shown in FIG. 8A, and a cross-section at the position of the line F-F in FIG. 7 after the Cu plating has been performed from the state shown in FIG. 7 is shown in FIG. 8B.

(61) The plating Cu 42 that has filled the interior of the opening grooves 50 forms the wiring 60 in the inductor area.

(62) The linear resists 83 that are formed in the linear portions 82 that are wider than those of the first exemplary embodiment are left on top of the Cu seed layer 30 in the lower portion of the wiring 60 extending in a direction that is orthogonal to (i.e., that intersects) the longitudinal direction of the wiring 60 (i.e., the direction in which the wiring 60 extends). As a result of these linear resists 83 remaining, as is shown in FIG. 9A, the plating Cu 42 does not fill the interior of the wiring 60 that is formed by the plating Cu 42, and instead of this, the penetration passages 70 are formed as tunnel-shaped cavities.

(63) In the present exemplary embodiment, if the linear bodies 82a whose width is less than the resolution limit of the exposure device are arranged at intervals from each other that are smaller than this resolution limit, then by increasing or decreasing the number of these linear bodies 82a, it is possible to more precisely control the width and height of the linear resists 83 and the penetration passages 70 than in the first exemplary embodiment. Consequently, it is possible to form linear portions 82 and linear resists 83 that have a desired width, and as a result, it is also possible to form penetration passages 70 that also have a desired width and height.

(64) The remaining structure is similar to that described in the first exemplary embodiment, and the actions and effects obtained from this structure are also similar to the actions and effects obtained from the first exemplary embodiment. Therefore, a description of these is not given here.

(65) Exemplary embodiments of the present disclosure have been described above, however, the present disclosure is not limited to these. Various modifications and the like may be made to the present disclosure insofar as they do not depart from the spirit or scope of the present disclosure.