SOLAR CELL AND ELECTRONIC DEVICE

Abstract

This application provides a solar cell, including a front electrode, a functional layer, and a back electrode. The front electrode is an electrode on a side of an illuminated surface. The front electrode includes a high-conductivity region and a low-conductivity region that are adjacent to each other, or the back electrode includes a high-conductivity region and a low-conductivity region that are adjacent to each other. The front electrode and/or the back electrode may be designed to be separated by region, and conductivity of one conductive region is designed to be higher than conductivity of the other conductive region. This can effectively avoid a film rectangular resistance loss caused by large-scale non-uniform lateral transfer of a photocurrent, and improve photoelectric conversion efficiency of the cell. In addition, cell comprehensive performance can be improved by flexibly selecting materials based on different requirements of different regions in different application scenarios.

Claims

1. A solar cell, comprising a front electrode and a back electrode that are disposed opposite to each other and a functional layer disposed between the front electrode and the back electrode, wherein the front electrode is an electrode on a side of an illuminated surface; and the front electrode comprises a high-conductivity region and a low-conductivity region that are adjacent to each other, or the back electrode comprises a high-conductivity region and a low-conductivity region that are adjacent to each other.

2. The solar cell according to claim 1, wherein the high-conductivity region of the front electrode is disposed around the low-conductivity region of the front electrode, or the high-conductivity region of the back electrode is disposed around the low-conductivity region of the back electrode.

3. The solar cell according to claim 1, wherein the low-conductivity region of the front electrode comprises a transparent colloidal layer and a first conductive mesh layer embedded in the transparent colloidal layer, or comprises a transparent conductive oxide layer and a first conductive mesh layer embedded in the transparent conductive oxide layer, wherein the first conductive mesh layer is electrically connected to the functional layer.

4. The solar cell according to claim 3, wherein the high-conductivity region of the front electrode comprises the transparent colloidal layer and a second conductive mesh layer embedded in the transparent colloidal layer, or comprises the transparent conductive oxide layer and a second conductive mesh layer embedded in the transparent conductive oxide layer, wherein the second conductive mesh layer is electrically connected to the functional layer.

5. The solar cell according to claim 4, wherein area coverage of the second conductive mesh layer in the high-conductivity region of the front electrode is greater than area coverage of the first conductive mesh layer in the low-conductivity region of the front electrode, or a mesh line depth-to-width ratio of the second conductive mesh layer is greater than a mesh line depth-to-width ratio of the first conductive mesh layer.

6. The solar cell according to claim 4, wherein the high-conductivity region of the front electrode further comprises a conductive modification layer disposed on the second conductive mesh layer.

7. The solar cell according to claim 3, wherein the front electrode further comprises a planar conductive layer or a conductive adhesive layer disposed between the transparent colloidal layer and the functional layer.

8. The solar cell according to claim 1, wherein the high-conductivity region of the front electrode comprises one or more of a metal layer or an alloy layer, a metal nanowire, graphene, a carbon nanotube, or a conductive polymer.

9. The solar cell according to claim 1, wherein the low-conductivity region of the back electrode comprises a metal layer or an alloy layer; or comprises a metal layer or an alloy layer, and a transparent conductive oxide layer or a metal oxide layer stacked with the metal or alloy layer; or comprises a transparent conductive oxide layer and a barrier layer, wherein the metal oxide layer comprises one or more of molybdenum oxide, zinc oxide, or tungsten oxide, and the barrier layer comprises an organic barrier material and/or an inorganic barrier material.

10. The solar cell according to claim 1, wherein the low-conductivity region of the back electrode comprises a transparent colloidal layer and a third conductive mesh layer embedded in the transparent colloidal layer, or comprises a transparent conductive oxide layer and a third conductive mesh layer embedded in the transparent conductive oxide layer, wherein the third conductive mesh layer is electrically connected to the functional layer.

11. The solar cell according to claim 1, wherein the high-conductivity region of the back electrode comprises a transparent colloidal layer and a fourth conductive mesh layer embedded in the transparent colloidal layer, or comprises a transparent conductive oxide layer and a fourth conductive mesh layer embedded in the transparent conductive oxide layer, wherein the fourth conductive mesh layer is electrically connected to the functional layer.

12. The solar cell according to claim 10, wherein the high-conductivity region of the back electrode comprises the transparent colloidal layer and a fourth conductive mesh layer embedded in the transparent colloidal layer, or comprises the transparent conductive oxide layer and a fourth conductive mesh layer embedded in the transparent conductive oxide layer, wherein the fourth conductive mesh layer is electrically connected to the functional layer.

13. The solar cell according to claim 12, wherein area coverage of the fourth conductive mesh layer in the high-conductivity region of the back electrode is greater than area coverage of the third conductive mesh layer in the low-conductivity region of the back electrode, or a mesh line depth-to-width ratio of the fourth conductive mesh layer is greater than a mesh line depth-to-width ratio of the third conductive mesh layer.

14. The solar cell according to claim 9, wherein the high-conductivity region of the back electrode comprises one or more of a metal layer or an alloy layer, a metal nanowire, graphene, a carbon nanotube, or a conductive polymer.

15. The solar cell according to claim 2, wherein the low-conductivity region of the front electrode comprises a transparent colloidal layer and a first conductive mesh layer embedded in the transparent colloidal layer, or comprises a transparent conductive oxide layer and a first conductive mesh layer embedded in the transparent conductive oxide layer, wherein the first conductive mesh layer is electrically connected to the functional layer.

16. The solar cell according to claim 4, wherein the front electrode further comprises a planar conductive layer or a conductive adhesive layer disposed between the transparent colloidal layer and the functional layer.

17. The solar cell according to claim 5, wherein the front electrode further comprises a planar conductive layer or a conductive adhesive layer disposed between the transparent colloidal layer and the functional layer.

18. The solar cell according to claim 6, wherein the front electrode further comprises a planar conductive layer or a conductive adhesive layer disposed between the transparent colloidal layer and the functional layer.

19. An electronic device, comprising a solar cell, which comprising a front electrode and a back electrode that are disposed opposite to each other and a functional layer disposed between the front electrode and the back electrode, wherein the front electrode is an electrode on a side of an illuminated surface; and the front electrode comprises a high-conductivity region and a low-conductivity region that are adjacent to each other, or the back electrode comprises a high-conductivity region and a low-conductivity region that are adjacent to each other, wherein the solar cell is configured to supply power to the electronic device.

20. A pair of smart glasses, wherein the pair of smart glasses comprises a power consumption module and a solar cell, which comprising a front electrode and a back electrode that are disposed opposite to each other and a functional layer disposed between the front electrode and the back electrode, wherein the front electrode is an electrode on a side of an illuminated surface; and the front electrode comprises a high-conductivity region and a low-conductivity region that are adjacent to each other, or the back electrode comprises a high-conductivity region and a low-conductivity region that are adjacent to each other, and the solar cell supplies power to the power consumption module.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0039] FIG. 1 is a schematic diagram of a structure of an electronic device 200 according to an embodiment of this application;

[0040] FIG. 2a is a schematic diagram of a structure of a pair of smart glasses 100 according to an embodiment of this application;

[0041] FIG. 2b is a schematic diagram of a structure of a locally separated part of the pair of smart glasses 100 according to an embodiment of this application;

[0042] FIG. 3 is a schematic diagram of a structure of a solar cell lens 103 according to an embodiment of this application;

[0043] FIG. 4a and FIG. 4b are schematic diagrams of structures of cross-sections obtained through cutting the solar cell lens shown in FIG. 3 along a position AA′;

[0044] FIG. 5a and FIG. 5b are regional schematic diagrams of a front electrode 21 and a back electrode 22 of a solar cell 20 respectively according to an embodiment of this application;

[0045] FIG. 6 and FIG. 7 are schematic diagrams of cross-sectional structures of a solar cell 20 according to an implementation of this application;

[0046] FIG. 8 is a schematic diagram of a cross-sectional structure of a front electrode 21 according to an implementation of this application;

[0047] FIG. 9 is a schematic diagram of a cross-sectional structure of a front electrode 21 according to another implementation of this application;

[0048] FIG. 10 is a schematic diagram of conductive mesh structures of a conductive region A and a conductive region B of a front electrode 21 according to an embodiment of this application;

[0049] FIG. 11 is a schematic diagram of a cross-sectional structure of a front electrode 21 according to still another implementation of this application;

[0050] FIG. 12 is a schematic diagram of a cross-sectional structure of a back electrode 22 according to an implementation of this application;

[0051] FIG. 13 is a schematic diagram of a cross-sectional structure of a back electrode 22 according to another implementation of this application;

[0052] FIG. 14 is a schematic diagram of a cross-sectional structure of a back electrode 22 according to still another implementation of this application;

[0053] FIG. 15 is a schematic diagram of a cross-sectional structure of a back electrode 22 according to still another implementation of this application;

[0054] FIG. 16 is a schematic diagram of a cross-sectional structure of a solar cell lens according to an embodiment 1 of this application; and

[0055] FIG. 17 is a schematic diagram of a cross-sectional structure of a solar cell lens according to an embodiment 3 of this application.

DESCRIPTION OF EMBODIMENTS

[0056] The following describes embodiments of this application with reference to the accompanying drawings in embodiments of this application.

[0057] Refer to FIG. 1. An embodiment of this application provides an electronic device 200, including a solar cell 20. The solar cell 20 is electrically connected to a power consumption module 30 in the electronic device, and may be configured to supply power to the power consumption module 30. The electronic device 200 may be a wearable smart device, for example, a pair of smart glasses, a pair of smart goggles, an AR device, a VR device, an AR/VR device, a smart watch or wristband, or a headset; may be a smart consumer electronics device, for example, a mobile phone, a tablet computer, or a notebook computer; or may be a mobile vehicle, for example, a car. The solar cell may be specifically a lens, a display, a transparent housing, or the like used for an electronic device. For example, the solar cell may be a lens, a display, or a transparent housing used for a wearable smart device, or may be a display, a transparent housing, or the like used for a smart consumer electronics device. The power consumption module 30 may include power consumption modules such as a battery, a processor, a sensor, and a communication module.

[0058] Refer to FIG. 2a, FIG. 2b, and FIG. 3. FIG. 2a is a schematic diagram of a structure of a pair of smart glasses 100 according to an embodiment of this application. FIG. 2b is a schematic diagram of a structure of a locally separated part of the pair of smart glasses 100 according to an embodiment of this application. FIG. 3 is a schematic diagram of a structure of a solar cell lens 103. The pair of smart glasses 100 includes glasses temples 101, glasses frames 102, solar cell lenses 103, and a cross beam 104, where the solar cell lens 103 is integrated with a solar cell. In an example, the solar cell lens 103 is embedded in a groove 105 of the glasses frame 102. A region covered by the groove 105 is visually opaque, and is defined as an external region 2 of the solar cell lens 103. A region not covered by the groove 105 is defined as an internal region 1 of the solar cell lens 103. For ease of understanding, in FIG. 3, a boundary between the external region 2 and the internal region 1 is distinguished by using a closed dashed dividing line. It should be understood that the dividing line is merely a schematic identification line, and the dividing line is not marked in an actual product. In an implementation of this application, various power consumption modules 30 such as a battery, a processor, a sensor, and a communication module may be integrated in the glasses temple 101 or the glasses frame 102 based on a requirement. The solar cell integrated in the solar cell lens 103 is electrically connected to the power consumption modules 30 in the glasses temple 101 or the glasses frame 102 to supply power to the power consumption modules. In some implementations, the power consumption modules 30 are integrated in the glasses temple 101, and the solar cell is electrically connected to the power consumption modules 30 in the glasses temple 101, so that the solar cell supplies power to the power consumption modules 30 in the glasses temple 101. The solar cell may be electrically connected to the power consumption modules 30 in the glasses temple 101 through a hinge. However, this is not limited thereto. In some implementations, the glasses temple 101 may be folded, and states of the glasses temple 101 include an unfolded state and a folded state. In some implementations, the power consumption modules 30 are integrated in the glasses frame 102, and the solar cell is electrically connected to the power consumption modules 30 in the glasses frame 102, so that the solar cell supplies power to the power consumption modules 30 in the glasses frame 102. The sensor may be an azimuth sensor, a GPS (Global Positioning System) sensor, a temperature sensor, a touch sensor, an infrared sensor, or the like.

[0059] It should be noted that the pair of smart glasses 100 of the structures shown in FIG. 2a and FIG. 2b is merely a structure in an implementation of this application. The structure of the pair of smart glasses 100 in this application is not limited to the structures shown in FIG. 2a and FIG. 2b. In this application, a structure of the glasses temple 101, a structure of the glasses frame 102, a fastening manner of the solar cell lens 103, and the like may be implemented in a plurality of forms. For example, the glasses frame 102 may be disposed around the entire solar cell lens 103 as shown in FIG. 2a, namely, a full-frame structure. Alternatively, the glasses frame 102 may be disposed around only a part of a periphery of the solar cell lens 103, to be specific, only a part of the solar cell lens 103 is fixedly connected to the glasses frame 102, for example, a half-frame structure. Alternatively, in some embodiments, the pair of smart glasses 100 may not be provided with a glasses frame 102, that is, has a frame-free structure.

[0060] Refer to FIG. 4a and FIG. 4b. FIG. 4a and FIG. 4b are schematic diagrams of cross-sectional structures obtained through cutting the solar cell lens 103 shown in FIG. 3 along a position AA′. The solar cell lens 103 includes a lens substrate 10 and a solar cell 20 disposed on the lens substrate 10. The lens substrate 10 is a transparent substrate, and a material of the lens substrate 10 may be, for example, resin or glass. The solar cell 20 may be formed directly on the lens substrate 10 by using the lens substrate 10 as a substrate, or may be integrally bonded to the lens substrate 10 after being manufactured on another substrate, that is, in some implementations, the solar cell 20 may further include the another substrate. The another substrate may be specifically a commonly used solar cell substrate, for example, polyethylene terephthalate (PET). The solar cell 20 includes a front electrode 21, a back electrode 22, and a functional layer 23 stacked between the front electrode 21 and the back electrode 22, where the functional layer 23 includes a first carrier transport layer 231, a light absorption layer 232, and a second carrier transport layer 233 that are successively stacked, a material of the light absorption layer 232 absorbs photons and then is excited to generate electron-hole pairs, and the first carrier transport layer 231 and the second carrier transport layer 233 separately extract electrons or holes and transmit the electrons or holes to the front electrode 21 and the back electrode 22 for external power supply. The front electrode 21 is an electrode on a side of an illuminated surface, and incident light is incident on the light absorption layer 232 from the front electrode 21. The back electrode 22 is an electrode on a side of a shady surface. The lens substrate 10 may be disposed on a side of the front electrode 21 (as shown in FIG. 4a), or may be disposed on a side of the back electrode 22 (as shown in FIG. 4b).

[0061] Refer to FIG. 5a, FIG. 5b, and FIG. 6. In an implementation of this application, the front electrode 21 of the solar cell 20 includes a low-conductivity region (namely, a conductive region A) and a high-conductivity region (namely, a conductive region B) disposed around the conductive region A. The back electrode 22 includes a low-conductivity region (namely, a conductive region C) and a high-conductivity region (namely, a conductive region D) disposed around the conductive region C. Conductivity of the conductive region B is higher than conductivity of the conductive region A, and/or conductivity of the conductive region D is higher than conductivity of the conductive region C. The front electrode and/or the back electrode may be designed to be separated by region and to include an internal conductive region and an external conductive region, and conductivity of the external conductive region is designed to be higher than conductivity of the internal conductive region. This can implement effective uniform convergence of a photocurrent of a front electrode and a back electrode in a large-area thin-film solar cell, avoid large-scale non-uniform lateral convergence of the photocurrent along surfaces of the front electrode and the back electrode, reduce a film loss and high dependence on film rectangular resistances of the front electrode and the back electrode, and improve photoelectric conversion efficiency of the cell. In addition, the design by region can improve cell comprehensive performance by flexibly selecting materials based on different requirements of different regions for performance, for example, transparency, in different application scenarios.

[0062] In an implementation of this application, the conductive region B is disposed around the conductive region A, and is in close contact with and electrically connected to the conductive region A. The conductive region B is configured to converge a photocurrent of the conductive region A. The conductive region B may completely surround the conductive region A as shown in FIG. 5a, or may partially surround the conductive region A. A size of the conductive region A is greater than the conductive region B. The conductive region D is disposed around the conductive region C, and is in close contact with and electrically connected to the conductive region C. The conductive region D is configured to converge a photocurrent of the conductive region C. The conductive region D may completely surround the conductive region C as shown in FIG. 5b, or may partially surround the conductive region C. A size of the conductive region C is greater than the conductive region D. The conductive region B completely surrounds the conductive region A, and the conductive region D completely surrounds the conductive region C. This can better implement uniform lateral transfer of the photocurrent.

[0063] In an implementation of this application, a degree of a conductivity difference between the conductive region B and the conductive region A is not limited, a degree of a conductivity difference between the conductive region D and the conductive region C is not limited, and the two degrees may be set based on an actual requirement. A larger degree of the conductivity difference is more conducive to convergence of photoelectrons. In some implementations, the conductivity of the conductive region B may be several to hundreds times higher than the conductivity of the conductive region A, for example, five times to 200 times. The conductivity of the conductive region D may be several to hundreds times higher than the conductivity of the conductive region C, for example, five times to 200 times. In some implementations, conductivity of each conductive region may be evaluated by using a film rectangular resistance of the conductive region. The film rectangular resistance is film rectangular resistance (Film rectangular resistance), and a unit is Ω/□. A higher film rectangular resistance of a conductive region indicates lower conductivity of the conductive region. Therefore, when a film rectangular resistance of the conductive region B is less than a film rectangular resistance of the conductive region A, the conductivity of the conductive region B is higher than the conductivity of the conductive region A. When a film rectangular resistance of the conductive region D is less than a film rectangular resistance of the conductive region C, the conductivity of the conductive region D is higher than the conductivity of the conductive region C. In some implementations, the film rectangular resistance of the conductive region A may be several to hundreds times higher than the film rectangular resistance of the conductive region B, for example, five times to 200 times. In some implementations, the film rectangular resistance of the conductive region C may be several to hundreds times higher than the film rectangular resistance of the conductive region D, for example, five times to 200 times. In some implementations, the film rectangular resistance of the conductive region A may be 0.05 Ω/□ to 20 Ω/□; and the film rectangular resistance of the conductive region C may be 0.05 Ω/□ to 20 Ω/□. In some implementations, the film rectangular resistance of the conductive region A may be 1 Ω/□ to 10 Ω/□; and the film rectangular resistance of the conductive region C may be 1 Ω/□ to 10 Ω/□. The foregoing multiple range of five times to 200 times may be specifically, for example, five times, 10 times, 20 times, 50 times, 100 times, 150 times, or 200 times. A high-conductivity region is disposed around the cell to uniformly converge a photocurrent of an internal conductive region. This can effectively reduce a loss caused by large-scale non-uniform transfer of charges in a large-area thin-film solar cell, and improve photoelectric conversion efficiency of the cell.

[0064] In an implementation of this application, a material, a thickness, a region size, and the like of the conductive region B located at an external part in the front electrode 21 and a material, a thickness, a region size, and the like of the conductive region D located at an external part in the back electrode 22 may be set based on an actual application requirement. In the pair of smart glasses, usually, to enlarge a light transmission surface of the solar cell lens 103 as a whole, a width W.sub.f (as shown in FIG. 6) of the conductive region B should be set as small as possible, for example, the width of the conductive region B may be less than or equal to 1 mm. When the front electrode is used as a side of the illuminated surface, the width of the external high-conductivity region B is as narrow as possible, thereby reducing an incident light loss of the solar cell. In an implementation of this application, a width W.sub.r (as shown in FIG. 6) of the conductive region D may be determined based on a width of the groove in the glasses frame, to be specific, the conductive region D may be disposed completely or not completely corresponding to the external region 2 of the pair of smart glasses 100. Complete corresponding is that the conductive region D is completely the same as the visually opaque external region 2 (namely, the groove region of the glasses frame) of the pair of smart glasses 100 in region shape and size, and projections of the two regions on a horizontal plane of the lens completely coincide, that is, the width of the conductive region D is equal to the width of the groove in the glasses frame. An enough high-conductivity region area can be ensured as far as possible by implementing complete corresponding, to improve cell efficiency. In some implementations, the width of the conductive region D may be less than or equal to 1 mm. The conductive region B may be completely the same as or different from the conductive region D in region size and shape. Widths at different positions of the conductive region B and the conductive region D may be the same or different.

[0065] Visible light transmittance (Visible Light Transmittance, VLT) of the solar cell 20 may be adjusted based on materials, thicknesses, and the like of the functional layer and the back electrode. In an implementation of this application, VLT of the internal region of the solar cell may be η%, where 0<η≤100, and η may be adjusted based on materials and thicknesses of the back electrode and the functional layer in the internal region; and VLT of the external region of the solar cell may be γ%, where y may be adjusted based on materials and thicknesses of the back electrode and the functional layer in the external region, and a value of y may meet 0≤γ<η.

[0066] In some implementations, in the solar cell, based on a material difference and a thickness difference between the back electrode in the internal region and the back electrode in the external high-conductivity region, a material difference and a thickness difference between functional layers in corresponding coverage regions, or the like, a transparency difference between the internal region and the external region of the solar cell can be implemented, so that a thin-film solar cell with mixed transparency is obtained, and maximization of light capture can be implemented by effectively using a scenario form feature.

[0067] In an implementation of this application, the conductive region A may be transparent, and the conductive region C may be transparent or semi-transparent. The conductive region B may be transparent, semi-transparent, or opaque. The conductive region D may be transparent, semi-transparent, or opaque.

[0068] In a manufacturing process of the solar cell 20, the front electrode 21 and the back electrode 22 may be combined with the functional layer 23 in a plurality of forms. Specifically, when the front electrode 21 and the back electrode 22 each include a conductive mesh layer structure, because a manufacturing process of the conductive mesh layer structure generally includes an imprinting operation, the functional layer may be adversely affected if an electrode is directly manufactured on the functional layer 23. Therefore, to protect the functional layer 23, usually, a conductive mesh layer in an electrode that is first combined with the functional layer 23 is combined with the functional layer by using a planar conductive layer, and a conductive mesh layer in an electrode that is then combined with the functional layer is combined with the functional layer by using a conductive adhesive layer. For ease of description, the following performs description with an example in which the front electrode 21 is combined with the functional layer 23 first, and then the back electrode 22 is combined with the functional layer 23, that is, the front electrode 21, the functional layer 23, and the back electrode 22 are successively formed on the substrate.

[0069] Refer to FIG. 7 and FIG. 8. In an implementation of this application, the conductive region A of the front electrode 21 includes a transparent colloidal layer 201, a first conductive mesh layer 202 embedded in the transparent colloidal layer 201, and a planar conductive layer 203 disposed on the transparent colloidal layer 201 and the first conductive mesh layer 202. A thickness of the transparent colloidal layer 201 may be 2 μm to 20 μm, a depth of the first conductive mesh layer 202 may be 1 μm to 10 μm, and a thickness of the planar conductive layer 203 may be 5 nm to 100 nm. The conductive region A is an internal part of the solar cell 20, namely, an intermediate region. When a conductive mesh structure is used, this region can maintain high transparency while obtaining conductivity. There are a plurality of meshes in the conductive mesh structure, and these meshes do not shield light. This can reduce a light shielding area of an internal region of the pair of smart glasses 100 and increase a power generation amount per unit area of the solar cell. When the conductive meshes, transparent colloid, and the planar conductive layer are used to form the composite electrode, a film rectangular resistance loss can be reduced. This avoids a problem of a large film rectangular resistance loss caused by a transparent electrode that uses a TCO, a conductive polymer, or the like alone in a conventional solution.

[0070] A material of the transparent colloidal layer 201 may be a colloidal material formed through curing from a liquid state, and the material is transparent after being cured. The material includes but is not limited to a thermoplastic polymer, a photocurable polymer, and a thermosetting polymer. Specifically, the material is, for example, a UV curable adhesive. Connected mesh grooves are formed in the transparent colloidal layer 201, and a conductive mesh material is filled in the mesh grooves to form the first conductive mesh layer 202. The conductive mesh material of the first conductive mesh layer 202 may include one of or a combination of more of a metal layer or an alloy layer, a conductive polymer, a carbon nanotube, graphene, and a metal nanowire. Optionally, the conductive mesh material of the first conductive mesh layer 202 includes a metal layer or an alloy layer that has good conductivity. The conductive mesh material usually fills the mesh grooves exactly, that is, an upper surface of the first conductive mesh layer 202 (namely, a surface of a side close to the functional layer) is flush with an upper surface of the transparent colloidal layer (namely, a surface of a side close to the functional layer). In some implementations, the first conductive mesh layer 202 may be alternatively fully filled with the conductive mesh material based on a requirement, so that the conductive mesh material exceeds the first conductive mesh layer 202 by a specific height, to be specific, the upper surface of the first conductive mesh layer 202 is higher than the upper surface of the transparent colloidal layer. In some other implementations, the conductive mesh material may alternatively only partially fill the mesh grooves, to be specific, the upper surface of the first conductive mesh layer 202 is lower than the upper surface of the transparent colloidal layer. A graphical structure form of the conductive mesh is not limited, and may be a regular graphical structure, for example, a quadrangle, a pentagon, a hexagon, or another polygon, or may be an irregular graphical structure. The graphical structure form may be specifically set based on an actual requirement.

[0071] Because a contact area between the conductive mesh layer and the functional layer 23 is limited, electrical conduction of the electrode is limited. An area of a conductive surface that is of the electrode and that contacts the functional layer 23 of the cell can be enlarged by disposing the planar conductive layer 203 on the first conductive mesh layer 202. This improves performance of the cell. In an implementation of this application, a material of the planar conductive layer 203 includes but is not limited to any one of or a combination of more of a transparent conductive oxide, a metal nanowire, a carbon nanotube, graphene, and a conductive polymer. The transparent conductive oxide (Transparent Conductive Oxide, TCO) is a thin film material with high transmittance and low resistivity in a visible light spectrum range (a wavelength is 380 nm to 780 nm). The TCO thin film material mainly includes indium tin oxide ITO, fluorine-doped tin oxide FTO, aluminum-doped zinc oxide AZO, gallium-doped zinc oxide GZO, boron-doped zinc oxide BZO, and the like.

[0072] Refer to FIG. 9. In another implementation of this application, the conductive region A of the front electrode 21 includes a transparent conductive oxide layer 201′ and a first conductive mesh layer 202 embedded in the transparent conductive oxide layer 201′. A thickness of the transparent conductive oxide layer 201′ may be 30 nm to 1000 nm. If the thickness of the transparent conductive oxide layer 201′ is excessively large, transparency of the film layer decreases, and costs increase. In some implementations, one part of the first conductive mesh layer 202 may be embedded in PET or transparent colloid, and another part of the first conductive mesh layer 202 may be embedded in the transparent conductive oxide layer. That is, in some implementations, the conductive region A of the front electrode 21 includes a transparent colloidal layer and a transparent conductive oxide layer that are stacked, where the first conductive mesh layer 202 is partially embedded in the transparent colloidal layer and partially embedded in the transparent conductive oxide layer. The functional layer 23 may be directly deposited on the transparent conductive oxide layer 201′, and there is no need to dispose a planar conductive layer. When conductive meshes and a transparent conductive oxide are used to form the composite electrode, a film rectangular resistance loss can be reduced. This avoids a problem of a large film rectangular resistance loss caused by a transparent electrode that uses a TCO, a conductive polymer, or the like alone in a conventional solution.

[0073] In an implementation of this application, the conductive region B may be transparent, semi-transparent, or opaque.

[0074] Still refer to FIG. 7 and FIG. 8. In an implementation of this application, the conductive region B includes a transparent colloidal layer 201, a second conductive mesh layer 204 embedded in the transparent colloidal layer 201, and a planar conductive layer 203 disposed on the second conductive mesh layer. A structure of the conductive region B is similar to that of the conductive region A. In another implementation of this application, the conductive region B includes a transparent conductive oxide layer and a second conductive mesh layer 204 embedded in the transparent conductive oxide layer. A structure of the conductive region B is similar to that of the conductive region A. The second conductive mesh layer 204 in the conductive region B is connected to the first conductive mesh layer 201 in the conductive region A, to implement electrical connection. The transparent colloidal layer in the conductive region B and the transparent colloidal layer 201 in the conductive region A have a same material selection range, and a material of the transparent colloidal layer in the conductive region B may be the same as or different from a material of the transparent colloidal layer in the conductive region A. The transparent conductive oxide layer in the conductive region B and the transparent conductive oxide layer in the conductive region A have a same material selection range, and a material of the transparent conductive oxide layer in the conductive region B may be the same as or different from a material of the transparent conductive oxide layer in the conductive region A. A material of the second conductive mesh layer 204 may be the same as or different from a material of the first conductive mesh layer 202.

[0075] In some implementations of this application, the conductive region A and the conductive region B each use a conductive mesh structure, that is, the entire front electrode uses a conductive mesh structure. In this way, the conductive region A and the conductive region B of the front electrode may be simultaneously manufactured by using a one-step molding process, to simplify a process flow. In this implementation, to make the conductivity of the conductive region B higher than the conductivity of the conductive region A, a conductivity difference may be implemented by designing the first conductive mesh layer and the second conductive mesh layer differently from perspectives of material selection, a mesh line width, a depth, a mesh period, a side length, and the like. A specific design manner is not limited.

[0076] In some implementations of this application, area coverage of the second conductive mesh layer 204 in the conductive region B is greater than area coverage of the first conductive mesh layer 202 in the conductive region A, that is, in unit area, an area of a region that is of the conductive region B and that is covered by mesh lines is greater than an area of a region that is of the conductive region A and that is covered by mesh lines. Specifically, for example, as shown in FIG. 10. FIG. 10 is a schematic diagram of conductive mesh structures of the conductive region A and the conductive region B according to an embodiment of this application. A mesh period or a side length of the second conductive mesh layer 204 in the conductive region B is less than a mesh period or a side length of the first conductive mesh layer 202 in the conductive region A. In this way, mesh line distribution of the conductive region B in unit area is denser. When the first conductive mesh layer and the second conductive mesh layer are the same in material, mesh line width, and depth, the conductivity of the conductive region B can be better than the conductivity of the conductive region A, so that the conductive region B converges a photocurrent of the conductive region A. For example, the first conductive mesh layer and the second conductive mesh layer are the same in material, mesh line width, and depth, the mesh period of the first conductive mesh layer is a square with a side length of 80 μm, and the mesh period of the second conductive mesh layer is a square with a side length of 20 μm.

[0077] In some other implementations of this application, a mesh line depth-to-width ratio of the second conductive mesh layer 204 is greater than a mesh line depth-to-width ratio of the first conductive mesh layer 202. The mesh line depth-to-width ratio is a ratio of a mesh line width to a mesh line depth (namely, a height or a thickness). When the conductive mesh material fills the mesh grooves in the transparent colloidal layer exactly, a mesh line depth is a depth of the mesh groove. The mesh line width may be at a micrometer level, for example, may be specifically 0.5 μm to 10 μm. The mesh line depth may be at a micrometer level, for example, may be specifically 1 μm to 15 μm.

[0078] Refer to FIG. 11. In some other implementations of this application, to make the conductivity of the conductive region B higher than the conductivity of the conductive region A, a conductive modification layer 205 may be further disposed on the second conductive mesh layer 204 in the conductive region B. Specifically, the conductive region B further includes the conductive modification layer 205 disposed on the second conductive mesh layer, and the conductive modification layer 205 is located between the second conductive mesh layer 204 and the planar conductive layer 203. When the conductive modification layer 205 is used to form a conductivity difference between the two regions, the first conductive mesh layer and the second conductive mesh layer may be completely the same (including a same patterned structure and a same material), to facilitate manufacture. A material of the conductive modification layer 205 includes but is not limited to one of or a combination of more of a metal layer or an alloy layer, and a metal nanowire. A metal or alloy may include one or more of gold, silver, nickel, copper, aluminum, or the like. A thickness of the conductive modification layer 205 may be 10 nm to 100 nm. The conductive modification layer 205 may facilitate conductive performance of the second conductive mesh layer 204. The conductive modification layer 205 may cover the entire conductive region B.

[0079] In another implementation of this application, the conductive region B includes one or more of a metal layer or an alloy layer, a metal nanowire, graphene, a carbon nanotube, or a conductive polymer. The metal or alloy layer may include one or more of gold, silver, nickel, copper, aluminum, or the like. The metal or alloy layer may be of a single-layer structure including one metal or alloy, or may be of a multi-layer structure including a plurality of different metals or alloys. In an embodiment, the conductive region B includes the metal or alloy layer, and the conductive region B is a metal electrode or an alloy electrode.

[0080] In an implementation of this application, the conductive region C of the back electrode 22 may be transparent or semi-transparent.

[0081] Refer to FIG. 7, FIG. 12, and FIG. 13. In an implementation of this application, the conductive region C includes a first layer 221 and a second layer 222 that are stacked, where the first layer 221 is a thin metal or alloy layer, and the second layer 222 is a transparent conductive oxide layer or a metal oxide layer. That is, the conductive region C may be a composite electrode formed by a thin metal or alloy and a transparent conductive oxide, for example, may be an Ag/ITO composite electrode, an Mg:Ag/ITO composite electrode, or a Ca/ITO composite electrode, or may be a composite electrode formed by a thin metal or alloy and a metal oxide. The metal oxide layer may include one or more of molybdenum oxide, zinc oxide, or tungsten oxide. Specifically, for example, the molybdenum oxide, the zinc oxide, and the tungsten oxide may be molybdenum trioxide, zinc oxide, and tungsten trioxide. A film rectangular resistance loss can be reduced by using a thin metal or alloy electrode, the composite electrode formed by the thin metal or alloy and the transparent conductive oxide, or the composite electrode formed by the thin metal or alloy and the metal oxide.

[0082] In another implementation of this application, the first layer 221 is a barrier layer, and the second layer 222 is the transparent conductive oxide layer. The barrier layer includes an organic barrier material and/or an inorganic barrier material. The film rectangular resistance loss can be reduced by using a composite electrode formed by the transparent conductive oxide and the organic or inorganic barrier layer. The organic barrier material includes but is not limited to copper phthalocyanine (CuPc), bathocuproine (BCP), and zinc phthalocyanine (ZnPc). The inorganic barrier material includes but is not limited to lithium metal (Li) and lithium fluoride.

[0083] Refer to FIG. 13. In still another implementation of this application, the conductive region C includes a transparent colloidal layer 223 and a third conductive mesh layer 224 embedded in the transparent colloidal layer 223. In an implementation of this application, the third conductive mesh layer 224 is combined with and electrically connected to the functional layer 23 by using a conductive adhesive layer 225. To be specific, the conductive region C is a transparent conductive mesh composite electrode embedded with transparent colloid, and the transparent composite electrode may be manufactured in a transfer manner. The third conductive mesh layer 224 of the transparent composite electrode may implement mechanical bonding and close electrical contact with the functional layer 23 by using the conductive adhesive layer 225. The conductive adhesive layer includes a conductive and adhesive material. A specific material is not limited. Optionally, the conductive adhesive layer may include a conductive adhesive. Specifically, for example, the conductive adhesive layer may include PEDOT:PSS doped with D-sorbitol, where PEDOT is a polymer of EDOT (3,4-ethylenedioxythiophene), and PSS is sodium polystyrenesulfonate. When conductive meshes and the transparent colloid are used to form the composite electrode, a film rectangular resistance loss can be reduced.

[0084] In still another implementation of this application, refer to FIG. 13. The conductive region C includes a transparent conductive oxide layer 223 and a third conductive mesh layer 224 embedded in the transparent conductive oxide layer 223. In this implementation of this application, the third conductive mesh layer 224 is combined with and electrically connected to the functional layer 23 by using a conductive adhesive layer 225. To be specific, the conductive region C is a transparent conductive mesh composite electrode embedded with a TCO, and the transparent composite electrode may be manufactured in a transfer manner. The third conductive mesh layer of the transparent composite electrode may implement mechanical bonding and close electrical contact with the functional layer 23 by using the conductive adhesive layer 225. Specific selection of the conductive adhesive layer is not limited to the foregoing descriptions.

[0085] In some implementations of this application, the conductive region C includes a thin metal or alloy, that is, the conductive region C uses a thin metal or alloy electrode. A thin metal or alloy layer may include one or more of gold, silver, nickel, copper, aluminum, or the like.

[0086] In an implementation of this application, the conductive region D may be transparent, semi-transparent, or opaque. A thickness of the conductive region D may be the same as or different from a thickness of the conductive region C. When the conductive region D is designed to be opaque, a light loss can be reduced, and comprehensive photoelectric conversion efficiency of the large-area thin-film solar cell can be improved. Specifically, in an embodiment, if the conductive region D is opaque and the conductive region C is semi-transparent, a thin-film solar cell with mixed transmittance can be formed.

[0087] Refer to FIG. 7 and FIG. 14. In an implementation of this application, the conductive region D includes a transparent conductive oxide layer 226 and a fourth conductive mesh layer 227 embedded in the transparent conductive oxide layer 226, or includes a transparent colloidal layer 226 and a fourth conductive mesh layer 227 embedded in the transparent colloidal layer 226. To be specific, the conductive region D is a transparent conductive mesh composite electrode embedded with transparent colloid or a transparent conductive oxide, and the transparent composite electrode may be manufactured in a transfer manner. The fourth conductive mesh layer 227 of the transparent composite electrode may implement mechanical bonding and close electrical contact with the functional layer 23 by using a conductive adhesive layer 225. When the conductive region A and the conductive region B of the front electrode 21 also use the conductive mesh structures, a conductive mesh structure of the conductive region D may be manufactured together with that of the front electrode 21, thereby simplifying a conductive mesh layer manufacturing process.

[0088] Refer to FIG. 15. In some implementations, the conductive region C and the conductive region D each use a conductive mesh structure. Similarly, similar to the front electrode, the conductive region C and the conductive region D each use the conductive mesh structure. In this case, to make the conductivity of the conductive region D higher than the conductivity of the conductive region C, a conductivity difference may be implemented by designing the third conductive mesh layer and the fourth conductive mesh layer differently, and a specific design manner is not limited. For details, refer to the designs of the first conductive mesh layer and the second conductive mesh layer of the front electrode. For example, in some implementations, area coverage of the fourth conductive mesh layer 227 in the conductive region D is greater than area coverage of the third conductive mesh layer 224 in the conductive region C. In some other implementations, a mesh line depth-to-width ratio of the fourth conductive mesh layer 227 is greater than a mesh line depth-to-width ratio of the third conductive mesh layer 224. In some other implementations, a conductive modification layer may be further disposed on the fourth conductive mesh layer in the conductive region D. That is, the conductive region D further includes the conductive modification layer disposed on the fourth conductive mesh layer. A material of the conductive modification layer includes but is not limited to one of or a combination of more of a metal layer or an alloy layer and a metal nanowire. The metal or alloy may include one or more of gold, silver, nickel, copper, aluminum, or the like. The conductive modification layer is located between the conductive adhesive layer and the fourth conductive mesh layer.

[0089] Refer to FIG. 12 and FIG. 13. In another implementation of this application, the conductive region D includes one or more of a metal layer or an alloy layer, a metal nanowire, graphene, a carbon nanotube, or a conductive polymer. The metal or alloy layer may include one or more of gold, silver, nickel, copper, aluminum, or the like. The metal or alloy layer may be of a single-layer structure including one metal or alloy, or may be of a multi-layer structure including a plurality of different metals or alloys. In an embodiment, the conductive region B includes the metal or alloy layer, and the conductive region D is a metal electrode or an alloy electrode. The conductivity and transparency of the conductive region D can be adjusted by adjusting a thickness of a film layer.

[0090] In the foregoing embodiment of this application, an example in which the front electrode 21 is combined with the functional layer 23 first and then the back electrode 22 is combined with the functional layer 23 is used for description. When the front electrode and the back electrode each include a conductive mesh structure, optionally, a conductive mesh layer of the front electrode is combined with the functional layer by using a planar conductive layer (the conductive mesh layer of the front electrode may be embedded in a transparent colloidal layer) or the functional layer is directly deposited on the conductive mesh layer to be in contact with, stacked with, and combined with the functional layer (the conductive mesh layer of the front electrode may be embedded in a transparent conductive oxide layer), and a conductive mesh layer of the back electrode is combined with the functional layer by using a conductive adhesive layer. In some other embodiments of this application, when the front electrode and the back electrode each include a conductive mesh structure, if the back electrode 22 is combined with the functional layer 23 first and then the front electrode 21 is combined with the functional layer 23, that is, the back electrode 22, the functional layer 23, and the front electrode 21 are successively formed on the substrate, optionally, a conductive mesh layer of the back electrode is combined with the functional layer by using a planar conductive layer (the conductive mesh layer of the back electrode may be embedded in a transparent colloidal layer) or is directly in contact with, stacked with, and combined with the functional layer (the conductive mesh layer of the back electrode may be embedded in a transparent conductive oxide layer), and a conductive mesh layer of the front electrode is combined with the functional layer by using a conductive adhesive layer. Details are not described herein again. An electrode that is later combined with the functional layer is combined with the functional layer by using a conductive adhesive layer instead of being directly manufactured on the functional layer. This can prevent the functional layer from being damaged by directly manufacturing the other electrode on the functional layer.

[0091] In an implementation of this application, a material of the conductive mesh layer is a material having good conductive performance. Optionally, a conductive mesh material of each of the first conductive mesh layer 202, the second conductive mesh layer 204, the third conductive mesh layer 224, and the fourth conductive mesh layer 227 may include one of or a combination of more of a metal layer or an alloy layer, a conductive polymer, a carbon nanotube, graphene, and a metal nanowire. The metal or alloy may include one or more of gold, silver, nickel, copper, aluminum, or the like. When the metal or alloy layer is included, the metal or alloy layer may be a single-layer structure including one metal or alloy, or may be a multi-layer structure including a plurality of different metals or alloys. For example, the conductive mesh layer includes a silver layer and a copper layer that are stacked, that is, the conductive mesh layer is of a double-layer structure including silver and copper.

[0092] In an implementation of this application, a specific structure and a specific material of the functional layer 23 are not limited. The light absorption layer 232 may be perovskite, an organic semiconductor material, an inorganic semiconductor material, an organic-inorganic mixed semiconductor material, or the like. The internal and external regions of the solar cell lens may use a same functional layer material or different functional layer materials. In addition to including the light absorption layer 232, the first carrier transport layer 231, and the second carrier transport layer 233, the functional layer 23 may further include another interface modification layer and the like. Materials of the first carrier transport layer 231 and the material of the second carrier transport layer 233 may be selected based on a material of the light absorption layer. For example, when the light absorption layer 232 uses PTB7-Th:IEICO-4F, the first carrier transport layer 231 and the second carrier transport layer 233 may be respectively zinc oxide (ZnO), molybdenum oxide (MoO.sub.3), or the like.

[0093] In an implementation of this application, a front electrode extraction region is disposed in the conductive region B of the front electrode 21, and a back electrode extraction region is disposed in the conductive region D of the back electrode 22. Refer to FIG. 6. The front electrode 21 and the back electrode 22 may be extracted in a manner, for example, as conducting wires, in the extraction regions to serve as positive and negative electrodes of the solar cell for external supply power.

[0094] In this application, “-” represents a value range, and the range includes values of both endpoints. For example, a thickness of the transparent colloidal layer 201 may be 2 μm to 20 μm, indicating that the thickness ranges from 2 μm to 20 μm, including values 2 μm and 20 μm of both endpoints.

[0095] The following further describes embodiments of this application by using a plurality of embodiments.

Embodiment 1

[0096] A pair of smart glasses is provided. The pair of smart glasses includes solar cell lenses. For a structure of the solar cell lens, refer to FIG. 16. The solar cell lens includes a lens substrate 10 and a solar cell 20 disposed on the lens substrate 10. A conductive region A of a front electrode 21 of the solar cell 20 uses an Ag/Cu composite metal mesh layer 202 embedded in a transparent colloidal layer 201, where a width of a mesh trench of the metal mesh layer 202 is about 3.5 μm, a depth of the trench is about 3 μm, a silver filling depth of the trench is about 2.3 μm, and a copper plating depth is about 1.0 μm. In addition, metal copper protruding from a surface of the groove is polished, and a step after polishing is less than 10 nm (that is, a height difference between an upper surface of the metal mesh layer 202 and an upper surface of the transparent colloidal layer 201 is less than 10 nm). A trench pattern in the transparent colloidal layer 201 is a regular hexagon with a side length of 85 μm. A conductive region B of the front electrode 21 also uses an Ag/Cu composite metal mesh 204 embedded in a transparent colloidal layer 201, where a width of a trench of the metal mesh 204 is about 5 μm, a depth of the trench is about 3 μm, silver filling is performed for about 2.3 μm in the trench, and copper plating is performed for about 1.0 μm. In addition, polishing is performed, a trench pattern of the conductive region B is a quadrangle with a side length of 20 μm, and a width W.sub.f of the conductive region B is 1 mm. The trench in the conductive region A of the front electrode 21 and the trench in the conductive region B of the front electrode 21 are mutually connected, and conductivity of the conductive region B is greater than conductivity of the conductive region A. A material of a planar conductive layer 203 is ITO, and a thickness is 30 nm. A conductive region C of a back electrode 22 uses an Ag/MoO.sub.3 composite electrode, where a thickness of an Ag layer 221 is 10 nm, and a thickness of a MoO.sub.3 layer 222 is 30 nm. A conductive region D of the back electrode 22 also uses metal meshes, and parameters are set the same as those of the conductive region B. A width W.sub.r of the conductive region D is the same as a width of a groove of a glasses frame of the pair of smart glasses, and W.sub.r is 1 mm. Conductivity of the conductive region D is greater than conductivity of the conductive region C. A functional layer includes an electron transport layer 231, a light absorption layer 232, and a hole transport layer 233, where the electron transport layer 231 is ZnO and has a thickness of 20 nm; the light absorption layer 232 uses PTB7-Th:IEICO-4F and has a thickness of 110 nm; and the hole transport layer 233 is molybdenum oxide MoO.sub.3 and has a thickness of 3 nm. In this embodiment, the conductive region A of the front electrode uses a transparent metal mesh-ITO (the planar conductive layer) composite electrode form. Compared with a conventional form in which a TCO or the like is simply used as a transparent electrode, a rectangular resistance can be reduced by one to two orders of magnitude. In addition, the conductive region B of the front electrode and the conductive region D of the back electrode are respectively used as high-conductivity convergence regions of the front electrode and the back electrode. When both the front electrode and the back electrode use metal mesh forms, a manufacturing process can be simplified. By using a designed imprinting mold, the conductive region B and the conductive region D are manufactured while imprinting the conductive region A. After the functional layer is manufactured, the conductive region C is finally manufactured through evaporation, so that the conductive region C is electrically connected to the conductive region D. In this way, photoelectric conversion efficiency of a manufactured large-area device cell of 30 cm.sup.2 is 4.92%, average visible light transmittance is 18%, and a power output of about 150 mW can be implemented under a standard illuminance condition. The conductive region B of the front electrode and the conductive region D of the back electrode are extracted as positive and negative electrodes of the solar cell, to implement an electrical connection between the solar cell lens and a glasses temple.

Embodiment 2

[0097] Compared with Embodiment 1, an only difference is as follows: The conductive region D of the back electrode is an Al electrode, a thickness of the Al layer is 150 nm, and a width W.sub.r is 1 mm. The conductive region C of the back electrode uses a thin metal/metal oxide composite electrode, and in this embodiment, an Ag/MoO.sub.3 composite electrode is used, where a thickness of Ag is 10 nm, and a thickness of MoO.sub.3 is 35 nm. In this way, photoelectric conversion efficiency of a manufactured large-area device cell of 30 cm.sup.2 is more than 2%.

Embodiment 3

[0098] For a structure of the solar cell lens, refer to FIG. 17. Compared with Embodiment 1, an only difference is as follows: The conductive region D of the back electrode 22 is an Al electrode, a thickness of the Al layer is 110 nm, and a width W.sub.r is 1 mm. The conductive region C of the back electrode 22 uses a composite electrode in which metal meshes 224 are embedded in a TCO layer 223, where a TCO uses ITO, a thickness of the ITO layer 223 is 300 nm, a mesh line width of the metal mesh 224 is 1 μm, a depth is 1 μm, a pattern is a regular hexagon, and a side length of the pattern is 85 μm. In this way, photoelectric conversion efficiency of a manufactured large-area device cell of 30 cm.sup.2 is more than 2%.

Embodiment 4

[0099] Compared with Embodiment 1, an only difference is as follows: The conductive region D of the back electrode is an Al electrode, a thickness of the Al layer is 100 nm, and a width W.sub.r is 1 mm. The conductive region C of the back electrode uses an Ag/MoO.sub.3 thin metal/metal oxide composite electrode, where a thickness of an Ag layer is 10 nm, and a thickness of a MoO.sub.3 layer is 35 nm. The conductive region B of the front electrode uses a form in which metal meshes are embedded in a transparent colloidal layer and a conductive modification layer is deposited on surfaces of the metal meshes, where the metal meshes use Ag/Cu metal meshes, a width of a trench is about 3.5 μm, a depth of the trench is about 3 μm, silver filling is performed for about 2.3 μm in the trench, and copper plating is performed for about 1.0 μm. After polishing is performed, a step is less than 10 nm, and a trench pattern is a regular hexagon with a side length of 85 μm. The conductive modification layer uses Ag, and has a thickness of 50 nm and a width W.sub.f of 1 mm. The trench in the conductive region B of the front electrode and a trench in the conductive region A of the front electrode are mutually connected. Parameters of the mesh trench and a metal mesh in the conductive region A of the front electrode are set the same as parameters of the trench and the metal mesh in the conductive region B. In this way, photoelectric conversion efficiency of a manufactured large-area device cell of 30 cm.sup.2 is more than 2%.

Comparative Example 1

[0100] A semi-transparent thin-film solar cell structure is provided. The semi-transparent thin-film solar cell structure includes stacked glass/indium tin oxide (ITO)/zinc oxide (ZnO)/PBTZT-stat-BDTT-8:PC61BM:PC71BM/PEDOT:PSS, where a front electrode is ITO, and a back electrode is PEDOT:PSS. Average transmittance of a small-area device (0.24 cm.sup.2) based on the structure is 24%, and photoelectric conversion efficiency under standard illuminance is 4.8%. For an enlarged large-area device (15.5 cm.sup.2), average transmittance is 24%, and photoelectric conversion efficiency under the standard illuminance is 0.06%. Therefore, efficiency is significantly reduced by 80 times. This is directly related to large rectangular resistances of the ITO and the PEDOT:PSS. As an effective area of a solar cell device is enlarged, the large rectangular resistances of the ITO and the PEDOT:PSS cause a significant increase in an equivalent series resistance of the cell, resulting in a large decrease in a fill factor and a short-circuit current. This seriously affects the photoelectric conversion efficiency.

[0101] The foregoing describes in detail the solar cell and the electronic device thereof that are provided in embodiments of this application. The description of the foregoing embodiments is merely used to help understand the method and a core idea of this application. In addition, a person of ordinary skill in the art can make variations and modifications in terms of specific embodiments and application scopes according to the idea of this application. In conclusion, the content of the specification should not be construed as a limitation on this application.