Formulation and processing solution for dicing process, and method for processing

Abstract

A formulation for a wafer dicing process comprises 1.0 to 1.5 mass % of a partially saponified polyvinyl alcohol having a polymerization degree of 200 to 400 and a saponification degree of 75 to 85 mol %; 0.4 to 0.6 mass % of polyoxyethylene-polyoxypropylene glycol ether having a number average molecular weight of 10,000 to 20,000 with a polymerization ratio of polyoxyethylene to polyoxypropylene of 75:25 to 85:15; and pure water (all mass % based on 100 mass % of formulation). The formulation is used in the form of a processing solution obtained by diluting it 10,000 to 100,000 times by pure water and flowing it on a dicing blade in a wafer dicing process to effectively remove dicing offcuts from the wafer and minute pieces of adhesive released from an adhesive layer of a dicing tape.

Claims

1. A wafer dicing process comprising: providing a wafer fixed by adhesive onto a dicing tape, the wafer having circuit structures formed on the wafer surface, and the circuit structures being separated from one another by streets; dicing the wafer along the streets using a rotating dicing blade to divide the wafer into individual circuit structures; and continuously flowing a processing solution to the region where the dicing blade contacts the wafer to remove dicing offcuts and adhesive particles released from the dicing tape during dicing, wherein the processing solution comprises a formulation diluted 10,000 to 100,000 times by pure water, and wherein the formation comprises 1,0 to 1.5 mass % in relation to 100 mass % of formulation of a partially saponified polyvinyl alcohol having a polymerization degree of 200 to 400 and a saponification degree of 75 to 85 mol %; 0,4 to 0.6 mass % in relation to 100 mass % of formulation of polyoxyethylene-polyoxypropylene glycol ether having a number average molecular weight of 10,000 to 20,000 with a polymerization ratio of polyoxyethylene to polyoxypropylene of 75:25 to 85:15; and pure water.

2. The wafer dicing process according to claim 1, wherein the partially saponified polyvinyl alcohol of the formulation for dicing process has a polymerization degree of 300 and a saponification degree of 80 mol %.

3. The wafer dicing process according to claim 1, wherein the partially saponified polyvinyl alcohol of the formulation has a polymerization degree of 300 and a saponification degree of 80 mol %; and the polyoxyethylene-polyoxypropylene glycol ether of the formulation has a number average molecular weight of 15,500 with a polymerization ratio of polyoxyethylene to polyoxypropylene of 83:17.

4. The wafer dicing process according to claim 1, wherein the formulation further comprises 0.1 mass % in relation to 100 mass % of formulation of phenyl glycol.

5. A processing solution used during a wafer dicing process to reduce the amount of particulate contaminants remaining on the wafer surface after completion of the wafer dicing process, the processing solution comprising: a formulation diluted 10,000 to 100,000 times by pure water, wherein the formulation comprises: 1,0 to 1.5 mass % of a partially saponified polyvinyl alcohol having a polymerization degree of 200 to 400 and a saponification degree of 75 to 85 mol %, and 0.4 to 0.6 mass % of polyoxyethylene-polyoxypropylene glycol ether having a number average molecular weight of 10,000 to 20,000 with a polymerization ratio of polyoxyethylene to polyoxypropylene of 75:25 to 85:15.

6. The processing solution according to claim 5; wherein the processing solution further comprises 0.1 mass % of phenyl glycol.

7. The processing solution according to claim 5; wherein the saponified polyvinyl alcohol has a polymerization degree of 300 and a saponification degree of 80 mol %.

8. The processing solution according to claim 7; wherein the processing solution further comprises 0.1 mass % of phenyl glycol.

9. The processing solution according to claim 5; wherein the polyoxyethylene-polyoxypropylene glycol ether has a number average molecular weight of 15,500 with a polymerization ratio of polyoxyethylene to polyoxypropylene of 83:17.

10. The processing solution according to claim 9; wherein the processing solution further comprises 01 mass % of phenyl glycol.

11. The processing solution according to claim 5; wherein the formulation comprises: 1.0 to 1.5 mass % of a partially saponified polyvinyl alcohol having a polymerization degree of 300 and a saponification degree of 80 mol %, and 0.4 to 0.6 mass % of polyoxyethylene-polyoxypropylene glycol ether having a number average molecular weight of 15,500 with a polymerization ratio of polyoxyethylene to polyoxypropylene of 83:17.

12. The processing solution according to claim 11; wherein the processing solution further comprises 0.1 mass % of phenyl glycol.

13. The processing solution according to claim 5; wherein the processing solution does not contain an abrasive.

14. The processing solution according to claim 13; wherein the processing solution further comprises 0.1 mass % of phenyl glycol.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The foregoing summary, as well as the following detailed description of the preferred embodiments of the invention, will be better understood when these are read in conjunction with the accompanying drawings. The following description including the drawings show preferred embodiments of the present invention. It should be understood, however, that the present invention is not limited to these embodiments.

(2) FIG. 1A is a plan view schematically showing a part of a wafer having many circuit structures formed on the wafer surface and partitioned by streets.

(3) FIG. 1B is a cross-sectional side view along the line 1B-1B of FIG. 1A.

(4) FIG. 2 is an explanatory cross-sectional side view showing the wafer illustrated in FIG. 1B adhered to a dicing tape during a dicing process using a dicing blade while supplying a processing solution of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

(5) FIG. 1A is a plan view schematically showing a substrate like a wafer having many circuit structures formed on its surface. FIG. 1B is a cross-sectional side view along the line 1B-1B of FIG. 1A.

(6) In FIGS. 1A and 1B, a structure 10 includes a substrate 20 of, for example, a semiconductor substance such as silicon, or a semiconductor layer on an insulating material such as glass.

(7) Structure 10 is a part of the structure of a wafer having many circuit structures (dies or chips) 11, 12, 13, 14, 15, 16, 17, 18 and 19 formed on the wafer surface. Respective circuit structures are partitioned on the wafer by streets (division lines) 30 which are used to partition the circuit structures from the substrate 20 into a discrete die or chip.

(8) FIG. 2 is an explanatory view showing a condition in which the structure 10 illustrated in FIG. 1B is fixed by adhesive to a dicing tape 40, and the dicing process is carried out by using a dicing blade 60 cutting along a street 30 while supplying a processing solution 50 of the present invention. In the drawing, an edge of the dicing blade 60 slightly cuts into the dicing tape 40. In this embodiment, the processing solution 50 is supplied through nozzles (not numbered) to the region where the rotating dicing blade 50 contacts the streets 30.

(9) As a component of the formulation for a dicing process of the present invention, polyvinyl alcohol is used. The polyvinyl alcohol is one having a polymerization degree of vinyl alcohol ranging about 200 to 400, preferably about 250 to 350, and more preferably about 280 to 320.

(10) Further, the polyvinyl alcohol is a partially saponified polyvinyl alcohol, and its saponification degree is about 70 to 90 mol %, preferably about 75 to 85 mol %, and more preferably about 78 to 82 mold.

(11) Together with the partially saponified polyvinyl alcohol, polyoxyethylene-polyoxypropylene glycol ether is used. The polyoxyethylene-polyoxypropylene glycol ether is a copolymer of polyoxyethylene and polyoxypropylene glycol, and the polymerization ratio thereof is about 75:25 to 85:15, preferably about 80:20 to 83:17. Its number average molecular weight is about 10,000 to 20,000, preferably about 13,000 to 18,000, and more preferably about 14,000 to 16,000.

(12) When 1.0 to 1.5 mass % in relation to 100 mass % of formulation of a partially saponified polyvinyl alcohol and 0.4 to 0.6 mass % in relation to 100 mass % of formulation of polyoxyethylene-polyoxypropylene glycol ether are dissolved in pure water, a formulation for a dicing process is obtained.

(13) To use the formulation in a dicing process, the formulation is highly diluted 10,000 to 100,000 times with pure water to form a processing solution. The diluted processing solution is continuously supplied to the part where the dicing of a wafer is carried out by use of a dicing blade, and the dicing offcuts formed by the dicing and the minute pieces of adhesive released from the dicing tape are removed by washing them away. Further, at the same time, a local temperature increase of the wafer by the friction of the dicing blade can be reduced or even prevented.

(14) For the formulation for a dicing process, about 0.1 mass % in relation to 100 mass % of formulation of phenyl glycol may further be used as a preservative.

(15) Further, a pH adjuster or any other chemical agents may appropriately be used as the case requires.

EXAMPLES

Example 1

(16) As a partially saponified polyvinyl alcohol, one having a polymerization degree of vinyl alcohol of 300, a saponification degree of 80 mol % and a number average molecular weight of 16,000 was used.

(17) As polyoxyethylene-polyoxypropylene glycol ether, a polymer of polyoxyethylene glycol and polyoxypropylene glycol, with their polymerization ratio of 83:17 and a number average molecular weight of 16,000 was used.

(18) As shown in Table 1, 1.33 mass % in relation to 100 mass % of formulation of the partially saponified polyvinyl alcohol (indicated by Polymer A) and 0.5 mass % in relation to 100 mass % of formulation of polyoxyethylene-polyoxypropylene glycol ether (indicated by Surfactant A) were mixed with and dissolved in 98.17 mass % in relation to 100 mass % of formulation of pure water (balance), to obtain a formulation for a dicing process.

Comparative Example 1

(19) 0.83 mass % in relation to 100 mass % of formulation of a copolymer having a molar ratio of polyvinyl pyrrolidone to vinyl acetate of 6:4 and a weight average molecular weight of 51,000 (indicated by Polymer B) and 0.83 mass % in relation to 100 mass % of formulation of polyoxyethylene-polyoxypropylene glycol ether (indicated by Surfactant A) were mixed with and dissolved in 98.34 mass % in relation to 100 mass % of formulation of pure water (balance), to obtain a formulation for dicing process (Table 1).

Comparative Example 2

(20) 1.33 mass % in relation to 100 mass % of formulation of pullulan (a polysaccharide of maltotriose bonded by α-1,6 bond) (indicated by Polymer C) and 0.33 mass % in relation to 100 mass % of formulation of a polyoxyalkylene alkyl ether (HLB 14.7) (indicated by Surfactant B) were mixed with and dissolved in 98.34 mass % in relation to 100 mass % of formulation of pure water (balance), to obtain a formulation for dicing process (Table 1).

(21) Test

(22) The following tests were conducted to measure properties and performance of the Example and Comparative Examples.

(23) Test 1

(24) Dicing Process Tests for Respective Components:

(25) Each of the formulations for a dicing process in Example 1 and Comparative Examples 1 and 2 was diluted 10,000 times with pure water to prepare a processing solution for a dicing process. A silicon wafer with a diameter of 300 mm on which a low-k film was formed as a mock-image sensor was set on a dicing machine AD3000T-HC manufactured by Tokyo Seimitsu Co., Ltd., and then a dicing process was carried out while supplying the processing solution at a flow rate of 15 liters/min. on a part to be cut.

(26) After completion of dicing, the wafer was inspected by a wafer inspection machine “Eagle” manufactured by Camtek Ltd. and a measuring microscope manufactured by Olympus Corporation to evaluate the quality of cutting by the dicing process and the dust amount on the wafer surface.

(27) The quality of cutting was evaluated by comparing the occurrence of burning (scorch, singe), breakage and chipping of cut chips.

(28) Further, the dust amount on the wafer surface was determined by calculating the number of dust particles existing on the surface of the chip and then indicating it by such an index that the dust amount of Comparative Example 2 represents 1.00. As the index is smaller, the dust amount is smaller, and the wafer surface is less contaminated.

(29) Results and Evaluation of the Dicing Process Tests for Respective Components:

(30) The results of the dicing process tests for respective components are indicated in Table 1.

(31) As a measure of the quality of cutting, the occurrence of burning, breakage and chipping were evaluated. In each of Example and Comparative Examples 1 and 2, occurrence thereof was not observed, i.e., the results are excellent (O) and no significant difference was seen among them.

(32) As the dust amount (index) on the wafer surface, Comparative Example 2 is 1.00 and Comparative Example 1 is 0.25. On the other hand, Example 1 shows further decreased dust amount of 0.20, and it is therefore found that the dust amount on the wafer surface is low and the degree of contamination is decreased to a great extent.

(33) Test 2

(34) Dicing process tests for respective dilution ratios: Dicing process tests were carried out on Example 1 and Comparative Example 1 in the same manner as above except that the dilution ratio of the formulation was changed.

(35) As the degree of dilution of the formulation, in addition to the 10,000 times diluted solution as mentioned above, a 60,000 times diluted solution and a 100,000 times diluted solution were prepared for the tests.

(36) Results and Evaluation of the Dicing Process Tests for Respective Dilution Ratios:

(37) The results of the dicing process tests for respective dilution ratios are indicated in Table 2.

(38) As compared with the 10,000 times diluted solution of Example 1, the 60,000 times diluted solution of Example 1-2 shows the dust amount (index) of 0.14 decreased as compared with 0.20 of Example 1, and the 100,000 times diluted solution of Example 1-3 also shows a decreased index of 0.18 as compared with 0.20 of Example 1.

(39) On the other hand, as compared with the 10,000 times diluted solution of Comparative Example 1 showing the dust amount (index) of 0.25, the 60,000 times diluted solution of Comparative Example 1-2 is increased to 0.45, and the 100,000 times diluted solution of Comparative Example 1-3 is further increased to 0.69.

(40) As mentioned above, Comparative Example 1 shows that the dust amount is increased when the dilution ratio is raised. On the contrary, Example 1 shows that even when the dilution ratio is raised, the dust amount is substantially unchanged, rather it is decreased, and therefore it can be sufficiently used at a high dilution ratio.

(41) TABLE-US-00001 TABLE 1 Ex. 1 Comp. Ex. 1 Comp. Ex. 2 Composition Polymer A 1.33 Polymer B 0.83 Polymer C 1.33 Surfactant A 0.50 0.83 Surfactant B 0.33 Pure water 98.17 98.34 98.34 Total 100 100 100 Degree of dilution (times) 10,000 10,000 10,000 Results of evaluation Quality of cutting (*1) ◯ ◯ ◯ Dust amount (index) 0.20 0.25 1.00 (*1): burning, breakage and chipping

(42) TABLE-US-00002 TABLE 2 Comp. Comp. Comp. Ex. 1 Ex. 1-2 Ex. 1-3 Ex. 1 Ex. 1-2 Ex. 1-3 Composition Polymer A 1.33 Polymer B 0.83 Surfactant A 0.50 0.83 Pure water 98.17 98.34 Total 100 100 Degree of 10,000 60,000 100,000 10,000 60,000 100,000 dilution times times times times times times Results of evaluation Dust amount 0.20 0.14 0.18 0.25 0.45 0.69 (index)

(43) The present invention is not limited to the details of the above described embodiments. The scope of the invention is defined by the appended claims and all changes and modifications that fall within the scope of the claims are therefore to be embraced by the invention.