DISPLAY CONTRAST

Abstract

Display devices with improved display contrast and methods of manufacturing the display devices. Some embodiments include a method of manufacturing a light emitting diode (LED) array. The method includes forming a first mesa area of a first LED and a second mesa area of a second LED, where a trench is defined between the first and second mesa areas. At least a portion of the trench is filled with a non-transparent or substantially non-transparent polymeric material that absorbs light emitted from the first and second LEDs.

Claims

1-24. (canceled)

25. A method of manufacturing a light emitting diode (LED) array comprising: forming a first mesa area of a first LED and a second mesa area of a second LED, wherein a trench is defined between the first and second mesa areas; and filling at least a portion of the trench with a non-transparent or substantially non-transparent polymeric material that absorbs light emitted from the first and second LEDs.

26. The method of claim 25, wherein at least a portion of the light absorbed by the polymeric material from the first LED is reflected from the first mesa area toward the polymeric material.

27. The method of claim 25, wherein the polymeric material is one of: polymide, epoxy, or benozcyclobutene.

28. The method of claim 25, further comprising: forming a first pixel on the first mesa area and a second pixel on the second mesa area; filling the polymeric material to extend above the first pixel and the second pixel; etching a first space within the polymeric material above the first pixel of the first mesa area and a second space within the polymeric material above the second pixel of the second mesa area; and depositing a first metal within the first space and a second metal within the second space.

29. The method of claim 28, further comprising depositing a metal layer on top of the polymeric material to electrically connect the first metal and the second metal.

30. The method of claim 29, wherein; the first and second mesa areas are of different heights; and the polymeric material provides a conformal layer for depositing the metal layer.

31. The method of claim 25, wherein forming the first mesa area and the second mesa area includes performing dry etching on a semiconductor layer.

32. The method of claim 25, further comprising curing the polymeric material subsequent to filling the at least a portion of the trench with the polymeric material.

33. The method of claim 25, wherein the first and second mesa areas are formed on a semiconductor layer, and the polymeric material at the trench absorbs the light emitted from the first and second LEDs and propagated through the semiconductor layer.

34. The method of claim 25, wherein filling the at least a portion of the trench with the polymeric material includes annealing the polymeric material in an oxygen atmosphere.

35. The method of claim 25, wherein the first and second LEDs are micro-LEDs.

36. The method of claim 25, wherein filling the at least a portion of the trench with the polymeric material includes forming a polymeric material layer over the first and second mesa areas.

37. A light emitting diode (LED) array, comprising: a first mesa area of a first LED; a second mesa area of a second LED, a trench defined between the first and second mesa areas; and a non-transparent or substantially non-transparent polymeric material within the trench to absorb light emitted from the first and second LEDs.

38. The LED array of claim 37, wherein at least a portion of the light absorbed by the polymeric material from the first LED is reflected from the first mesa area toward the polymeric material.

39. The LED array of claim 37, wherein the polymeric material is one of: polymide, epoxy, or benozcyclobutene.

40. The LED array of claim 37, wherein: a first pixel is formed on the first mesa area and a second pixel is formed on the second mesa area; the polymeric material within the trench extends above the first pixel and the second pixel; the polymeric material defines a first space within the polymeric material above the first pixel of the first mesa area and a second space within the polymeric material above the second pixel of the second area; and the LED array further includes a first metal deposited within the first space and a second metal deposited within the second space.

41. The LED array of claim 40, further comprising a metal layer on top of the polymeric material to electrically connect the first metal and the second metal.

42. The LED array of claim 41, wherein: the first and second mesa areas are of different heights; and the polymeric material provides a conformal layer for the metal layer disposed on top of the polymeric material.

43. The LED array of claim 37, wherein the first and second mesa areas are formed on a semiconductor layer, and the polymeric material at the trench absorbs the light emitted from the first and second LEDs and propagated through the semiconductor layer.

44. The LED array of claim 37, wherein the first and second LEDs are micro-LEDs.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Embodiments of the present invention will now be described, by way of example only, with reference to the accompanying drawings in which:

[0034] FIGS. 1 and 2 are micro-LED arrays according to the prior art showing significant crosstalk;

[0035] FIG. 3 is a micro-display image from a conventional matrix device using SiO.sub.2 as the isolation layer between mesa and from the image where electric crosstalk and open circuit (due to metal coverage issue on the SiO.sub.2) are evident;

[0036] FIG. 4 is a micro-display image fro a micro-LED array device according to the present invention where there is no electric crosstalk and open circuit are observed;

[0037] FIG. 5 is a cross-sectional side view of a micro-LED array according to the present invention;

[0038] FIG. 6 is a top view of a micro-LED array according to the present invention; and

[0039] FIGS. 7 to 14 show a method of forming micro-LED arrays according to the present invention.

BRIEF DESCRIPTION

[0040] Generally speaking, the present invention resides in the provision of using a non-transparent or substantially non-transparent material to block light from an emitter source to surrounding components such as emitters, sensors or components of this nature. This non-transparent material is used to reduce unwanted crosstalk and thereby provide improved display contrast for micro-LED arrays and the like.

[0041] FIGS. 1 and 2 are views of arrays according to the prior art generally designated 100, 200 where there are a plurality of LEDs 112, 212 showing significant crosstalk between them, The LEDs 112, 212 when activated have a halo effect and show poor display contrast. In the array 100 there is a block of LEDs 112 where there is poor contrast with as much as 20% of the light measured from the surrounding area outside the area of the LED 112.

[0042] FIG. 3 is a micro-display image 300 from a conventional matrix device according to the prior art using SiO.sub.2 as the isolation layer between mesa and from the image. Electric crosstalk and an open circuit (due to metal coverage issue on the SiO.sub.2) are evident due to the very poor image contrast.

[0043] FIG. 4 is a micro-display image from a micro-LED array device 400 according to the present invention where there is no electric crosstalk and open circuit are observed. There is therefore a much improved image contrast.

[0044] FIG. 5 is a cross-sectional side view of a micro-LED array 500 according to the present invention. As shown in FIG. 5 there are three mesa regions generally designated 512, 524, 516. The mesa regions 512, 524, 516 protrude upwards and have flat top sections in the form of, for example, truncated cones. The important aspect to note from FIG. 5 is that between mesa regions 512 and 514 there is an open space 518 (i.e. a trench) and no in-filling. Between mesa regions 514 and 516 the space is filled with a non-transparent or substantially non-transparent material 520 to block light. For example, the non-transparent or substantially non-transparent material 520 is a polyimide. In the trench between mesa regions 512 and 514, FIG. 5 shows that light rays 522 exit the lower surface and enter the open space 518 area and are therefore capable of reducing display contrast. In the trench between mesa regions 514 and 516 the non-transparent or substantially non-transparent material 520 blocks the lights rays 524 and prevents the light rays contaminating the area around the LED light emitting areas thereby maintaining a high display contrast.

[0045] In the present invention the non-transparent or substantially non-transparent material 520 is therefore introduced (e.g. deposited) to fill the trench between adjacent pixels. Although the actual thickness of the deposited non-transparent or substantially non-transparent material 520 is not important sufficient material should be introduced so that redirected light should be absorbed and prevented from being emitted from the upper surface. The thickness of the non-transparent or substantially non-transparent material 520 may be more or less than the thickness of the mesa structure. Consequently, the light from the LED sidewall can enter the polyimide at a larger range of incident angle owing to the increase in refractive index where the light is then absorbed or partially absorbed by the polymer layer. This helps to further improve display contrast.

[0046] The deposited non-transparent or substantially non-transparent material 520 can also function to compensate the height difference of different mesa regions, such that the metal layer on the polyimide can be deposited in a conformal layer, further reducing the light scattering from the trench.

[0047] The deposited non-transparent or substantially non-transparent material 520 can also function to effectively isolate each pixel and p-contact from n-contacts, thereby eliminating the undesirable electric crosstalk and improving the device reliability.

[0048] Owing to the large refractive index difference between the semiconductor and surrounding mediums a significant portion of the light is typically trapped in the semiconductor layer which leads to phonon recombination effects causing unwanted and potentially damaging thermal build-up. The introduction of a polymer results in more of the light escaping plus increases the volume of material and the thermal conductivity to improve heat dissipation. An opaque polymer surface layer can also be formed by annealing the polymer in an oxygen atmosphere.

[0049] FIG. 6 is a top view of a micro-LED array 600 according to the present invention where non-transparent or substantially non-transparent material is deposited to fill the trench in adjacent pixels. The emitting LED therefore has a very good display contrast and has a much reduced halo effect and crosstalk. The contrast between the LED emitter and the surrounding area is therefore high.

[0050] FIGS. 7 to 14 show a method of formingmicro-LED arrays according to the present invention. FIG. 7 shows two mesa regions 612, 614 formed by dry etch. In FIG. 8, two pixels 616, 618 are formed on the upper surface of the mesa regions 612, 614. FIG. 9 shows N-bus formation 620, 622 on the upper surface on the mesa regions 612, 614. In FIG. 10 a non-transparent or substantially non-transparent material (e.g. polyimide) 624 is deposited to fill the trench between pixels and as shown extends over the upper surface of the mesa regions 612, 614 and the pixels 616, 618 and the N-bus formations 620, 622. FIG. 11 then shows there is curing of the non-transparent or substantially non-transparent material (e.g. polyimide) 624 with areas 626, 628 etched above the pixels 616, 618. As shown in FIG. 12 metal 630, 632 is spread into and annealed into the etched areas 626, 628. A p-metal 634 is then deposited as shown in FIG. 13. FIG. 14 shows the final array which can be topside and backside emitting

[0051] Whilst specific embodiments of the present invention have been described above, it will be appreciated that departures from the described embodiments may still fall within the scope of the present invention. For example, any suitable type of non-transparent or substantially non-transparent material may be used to block light and improve the display contrast on not only array devices but also flip-chip devices.