PASSIVE Q-SWITCH LASER DEVICE
20170201061 ยท 2017-07-13
Assignee
Inventors
Cpc classification
H01S3/094053
ELECTRICITY
H01S3/09415
ELECTRICITY
International classification
Abstract
Provided is a passive Q-switch laser device possessing a power density controller (15) making power density of excitation light from an excitation light source (14) equal to or greater than power density so that delay time required for reaching oscillation after start of excitation of a laser gain medium (12) becomes equal to or shorter than a laser upper energy level lifetime of the laser gain medium (12).
Claims
1. A passive Q-switch laser device, comprising: an input mirror element and an output mirror element forming a resonator; a laser gain medium being arranged inside the resonator; a saturable absorber being arranged inside the resonator; an excitation light source exciting the laser gain medium; and a power density controller making power density of excitation light from the excitation light source equal to or greater than power density so that delay time required for reaching oscillation after start of the excitation of the laser gain medium becomes equal to or lower than a laser upper energy level lifetime of the laser gain medium.
2. The passive Q-switch laser device according to claim 1, wherein the power density controller includes either or both of a driving power source aiming for adjusting a power of the excitation light from the excitation light source and an optical system aiming for adjusting a suitable spot diameter of the excitation light from the excitation light source in the laser gain medium.
Description
BRIEF DESCRIPTION OF DRAWINGS
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DESCRIPTION OF EMBODIMENTS
[0028] Hereinafter, modes for implementing the present invention will be described in detail with reference to the accompanying drawings.
[0029] (Embodiment) A passive Q-switch laser device 1 according to the embodiment of the present invention includes, as illustrated in
[0030] The input mirror element 11a is formed by, for example, evaporating a dielectric multilayer film to a quartz glass or BK7 plate, and transmits excitation light L1 from the excitation light source 14 therethrough at high transmittance and reflects, at high reflectance, light L2 emitted from the laser gain medium 12. The output mirror element 11b is also formed by, for example, evaporating a multilayer film to a quartz glass or BK7 plate, and transmits part of the induced emission light L2 therethrough and reflects a remaining part thereof. Light L3 transmitted through the output mirror element 11b and outputted to the outside turns into laser oscillation light.
[0031] The laser gain medium 12 and the saturable absorber 13 are provided for a resonance optical path of the resonator 11. In the present embodiment, the saturable absorber 13 is inserted between the laser gain medium 12 and the output mirror element 11b, but may be inserted between the input mirror element 11a and the laser gain medium 12. Further, the input mirror element 11a may directly be evaporated to an excitation side of the laser gain medium 12 and the output mirror element 11b may directly be evaporated to an output side of the saturable absorber 13. The laser gain medium 12 and the saturable absorber 13 may be directly bonded to each other to be integrated and form a monolithic structure.
[0032] For the laser gain medium 12, atoms are excited to a laser upper energy level as a result of incidence of the excitation light L1 extracting from the excitation light source 14 and remain at the upper level for almost an upper energy level lifetime, which leads to a state of population inversion (the number of atoms at the upper energy level is greater than the number of atoms at a lower energy level), thereby forming a gain (amplified) medium. Transition of the atoms from the upper energy level to the lower energy level results in emission of fluorescence L2.
[0033] The saturable absorber 13 serves as a Q-switching element, which absorbs light L2 emitted from the laser gain medium 12. Afterwards the saturable absorber 13 becomes highly transmissive for the light L2 as a result of high-speed shift of intensity of the light L2 between an absorbed and saturated state due to an increasement of the accumulated population inversion.
[0034] The excitation light source 14 is driven by a driving power from a power supply source 15, and emits the excitation light L1 of a wavelength that can excite the laser gain medium 12. The excitation light L1 emitting from the excitation light source 14 is applied to the laser gain medium 12 via an optical system 16 and the input mirror 11a.
[0035] The power supply source 15 includes a control section 15a and a driving circuit 15b. The control section 15a controls the driving circuit 15b to thereby control power density of the excitation light of the laser gain medium 12 resulting from the irradiation of the excitation light L1 emitted from the excitation light source 14. Through the control performed by the control section 15a of the driving power source 15, the power density of the excitation light L1 applied to the laser gain medium 12 is made equal to or greater than power density so that delay time (t.sub.s) required for reaching oscillation after start of the excitation of the laser gain medium 12 becomes equal to or less than a laser upper energy level lifetime, of the laser gain medium 12.
[0036] As described above, in the present embodiment, the power density of the excitation light L1 is controlled by the driving power source 15, but the power density of the excitation light L1 also varies depending on a diameter of an irradiation spot of the excitation light L1, so that the control section 15a of the driving power source 15 can be dispensed with. In other words, the excitation light source driven by the driving circuit 15b to emit the excitation light L1 with a predetermined power. The diameter of the irradiation spot may be controlled by the optical system 16 to make the power density of the excitation light L1 equal to or greater than the power density so that excitation time (t.sub.s) required for reaching oscillation from the start of the excitation of the laser gain medium 12 becomes equal to or shorter than the laser upper energy level lifetime of the laser gain medium 12.
[0037] The laser gain medium 12 is, for example, an Nd:YAG crystal, and the laser upper energy level lifetime is approximately 230 s (where the dopant concentration of Nd ions in YAG is 1 at. %). In this case, preferably used as the excitation light source 14 is a light source that efficiently emits the excitation light L1 with a wavelength around 808 nm that can excite, at a laser upper energy level, Nd atoms in the laser gain medium 12. A laser diode is preferable applied for such a light source.
[0038] In a case the laser gain medium 12 is a Nd:YAG crystal, a wavelength of the light L2 emitted from the laser gain medium 12 is around 1.06 m, and thus a Cr.sup.4+:YAG crystal is a preferable choice a the saturable absorber 13.
[0039] In the present embodiment, the quartz glass plate is used for the input mirror 11a and a gap is provided between the input mirror 11a and the Nd:YAG crystal 12. In this case, the interface for the incidence of the light L2 in the resonator 11 becomes larger, and results in higher loss. To reduce the loss, the incidence interface should be reduced, and therefore a coating as an input mirror may directly be laminated on the Nd:YAG crystal 12. As a result, the interfaces could be reduced from 6 to 4.
[0040] To further reduce the interface, a coating as an output mirror may directly be laminated on the Cr.sup.4+:YAG crystal 13. As a result, the interface is reduced to 2. Bonding together the Nd:YAG crystal 12 and the Cr.sup.4+:YAG crystal 13 can set the interface at 0. Note that, for a bonding interface, there are two possible cases: direct bonding; and bonding after performing coating.
[0041] The light L2 emitted from the laser gain medium 12 is incident on the saturable absorber 13. In case the intensity of the light L2 cannot surpass the absorption and saturation of the saturable absorber 13, the saturable absorber 13 strongly absorbs the light L2 leading to high loss of the resonator 11 and a small Q-value. As a result, Q-switch oscillation cannot start. When the intensity of the light L2 become strong to such an extent that surpasses the absorption and saturation of the saturable absorber 13, the absorption of the saturable absorber 13 is saturated. Thereafter the saturable absorber 13 turns to be transparent results in lower loss of the saturable absorber 13 and higher Q-value. As a result, the Q-switch oscillation starts. Through the Q-switch oscillation, the Q-switch laser light L3 emits from the output mirror element 11b to the outside.
[0042] Next, operation of the passive Q-switch laser device of the present embodiment will be described.
[0043] D1 in
[0044] As illustrated in
[0045]
[0046] In the passive Q-switch laser device 1 of the present embodiment, the power density of the excitation light is made equal to the power density so that the excitation (delay) time t.sub.s, 1.sub._ (=t.sub.s, 1t.sub.1) for reaching the oscillation after the start of the excitation of the laser gain medium 12 at t.sub.1 is almost equal to the laser upper energy level lifetime of the laser gain medium 12. Thus the increase extent of the population inversion, as well as the fluorescence intensity also increases. When the fluorescence intensity increases fast to a certain value at time t.sub.2, the saturable absorber 13 absorbs the fluorescence from gain media 12 and reaches saturation. Therefore, even when the components 11, 12, 13, 14, and 15 forming the passive Q-switch laser device 1 fluctuates (even when a phenomenon leading to variation N.sub.s when N.sub.s occurs), a jitter of the delay time required for reaching the Q-switch oscillation is small. Moreover, the operation of Q-switch oscillation continues while a decrease in the number of atoms at the upper energy level is small and the time is equal to or lower than a fluorescence lifetime at the excitation period. Thus the loss related to the excitation could be reduced, resulting in an improvement in the oscillation efficiency.
[0047] Next, the aforementioned operation of the passive Q-switch laser device 1 according to the present embodiment will be compared with operation of a passive Q-switch laser device of Comparative Example.
[0048]
[0049] In Comparative Example, the power density of the excitation light is D.sub.2 (<D.sub.1), as illustrated in
[0050] In case of passive Q-switch operation, population inversion density N is related to excitation time t based on a rate equation as expressed in formula (1).
[0051] In formula (1) W.sub.p denotes a rate from which the population inversion is increased by the excitation, and N.sub.tot denotes the number of rare-earth ions dopant per unit volume. It is assumed that population inversion density required for the start of the Q-switch oscillation is N.sub.s and start time is t.sub.s. Following formula (1), the population inversion is expressed by formula (2).
And thus formula (3) could be obtained.
Here, W.sub.p is proportional to the excitation density D, and thus excitation density dependence of start time variation ts in Q-switching is defined by formula (4).
[0052] Note that a=W.sub.pN.sub.tot/N.sub.s. The phenomenon could be illustrated qualitatively as shown in
[0053] A vertical axis of
[0054] On the other hand, based on formula (1), excitation efficiency with respect to time t.sub.p is obtained by formula (5).
[0055]
[0056] Specifically, in the passive Q-switch laser device 1 according to the present embodiment, excitation is performed with the power density of the excitation light L1 from the excitation light source 14, i.e., while more intensive excitation density than excitation density D.sub. is required for obtaining a given output as designed in a case where an excitation time width of the laser gain medium 12 is defined as the upper energy level lifetime (), thereby providing a smaller jitter of the delay time required for the Q-switch oscillation even upon the fluctuation of the components 11, 12, 13, 14, and 15 in the passive Q-switch laser device 1.
[0057] Further, the Q-switch oscillation is performed while a decrease in the number of atoms at the upper energy level is small. Followed by a reduced loss caused by natural emission, the oscillation efficiency could be enhanced.
[0058] Next, a verification experiment, will be described.
[0059] (Verification Experiment) Through the description of the operation of the passive Q-switch laser device 1 according to the embodiment, a mechanism has been indicated. The power density of the excitation light from the excitation light source is equal to or higher than the power density so that the delay time required for reaching the Q-switch oscillation after the start of the excitation of the laser gain medium becomes equal to or shorter than the laser upper energy level lifetime of the laser gain medium. A higher excitation efficiency and a smaller jitter of the delay time required for reaching the Q-switch oscillation is obtained. Therefore, the verification experiment was performed although it is unnecessary.
[0060]
[0061] The input mirror 11a is a [100]-cut YAG crystal sized 3 mm3 mm1 mm. and has a dielectric multilayer film formed on a outer surface thereof for reflecting light with a wavelength of 1064 nm at high reflectance and transmitting light with a wavelength of 808 nm therethrough at high transmittance. The output mirror element 11b is a quartz glass plate, and has, on an inner surface thereof, a dielectric multilayer film formed to 50% reflection and 50% transmission light with a wavelength of 1064 nm.
[0062] The laser gain medium 12 laminated on the inner surface of the YAG crystal 11a is a [100]-cut YAG crystal sized 3 mm3 mm4 mm with an 1.1 at % dopant of Nd.sup.3+ions. A composite YAG/Nd:YAG sized 3 mm3 mm5 mm and having the Nd:YAG 12 on the YAG 11a is produced by HG Optronics Inc.
[0063] The saturable absorber 13 arranged between the laser gain medium 12 and the output mirror element 11b is a [110]-cut Cr.sup.4+:YAG crystal sized 3 mm 4 mm and has an antireflection film formed on both surfaces thereof for not reflecting light with a wavelength of 1064 nm. The Cr.sup.4+:YAG crystal is produced by Scientific Materials Co.
[0064] The excitation light source 14 is a fiber-coupled 400 W LD. The fiber has a core diameter of 600 m and an numerical aperture (N.A.) of 0.22. The LD 14 generates laser light with a central wavelength of 808 nm at 1 kHz.
[0065] The verification experiment was performed by using the laser light L1 from the LD 14 with a spot diameter of 1.1 mm after the lens system 16 and controlling a driving current of the LD 14 by the power density controller 15. Thereby the power density of the excitation light LI could be modulated.
[0066] Table 1 and
TABLE-US-00001 TABLE 1 Ratio of Peak Pulse power Standard power width Standarized Excitation density of Excitation deviation Timing- of of excitation Excitation power excitation Excitation efficiency of timing jitter LD14 LD14 time energy density light efficiency ratio jitter ratio W t.sub.p (s) t.sub.p/ mJ D (kW/cm.sup.2) D/D.sub. (%) / .sub. 2 (ns) /.sub. 400 56 0.2434783 22.4 41.36 3.20 22.83765 1.604737837 65 0.16688 370 63 0.273913 23.31 38.25 2.96 20.57978 1.446083622 69 0.17715 330 70 0.3043478 23.1 34.12 2.64 20.54709 1.443786587 91 0.23363 290 80 0.3478261 23.2 29.98 2.32 19.47506 1.368458035 119 0.30552 250 102 0.4434783 25.5 25.85 2.00 19.1904 1.348455773 108 0.27728 210 110 0.4782609 23.1 21.71 1.68 18.96018 1.332278857 116 0.29782 170 150 0.6521739 25.5 17.58 1.36 18.27375 1.284045339 172 0.44159 130 220 0.9565217 28.6 13.44 1.04 14.48762 1.018004566 289 0.74198 230 1 12.92 1.00 14.23139 1 389.5 1 120 280 1.2173913 33.6 12.41 0.96 13.97516 0.981995434 490 1.25802 100 340 1.4782609 34 10.34 0.80 13.59611 0.95536065 1191 3.05777
[0067] Symbol in Table 1 is equal to an upper level life time of 230 s of the used laser gain medium 12. Symbol D in Table 1 denotes excitation power density when a pulse width is (=230 s), which is equal to 12.92 kW/cm.sup.2. Symbol .sub. is equal to an efficiency of 14.23139 when the pulse width is (=230 s). A vertical axis of
[0068] Table 1 and
[0069] This is also confirmed with another laser material ND:YVO.sub.4 (with an upper energy level lifetime =84 s) and the same effects can be expected with materials other than the Yb:YAG.
[0070] Priority is claimed on Japanese application No. 2016002667, filed Jan. 8, 2016, the content of which is incorporated herein by reference.