A passively, Q-switched laser is described. The laser may operate at an eye-safe lasing wavelength of 1.34 microns and use a gain element of Nd:YVO.sub.4 and a saturable absorber element of V:YAG with a space separating the gain element and saturable absorber element. The Q-switched laser is pumped by a grating stabilized laser diode. The laser may be used in laser ranging applications.

A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a first resonator and a second resonator, the first and second resonators having parallel resonator directions along a longitudinal direction and being monolithically integrated into the semiconductor laser diode, wherein the first resonator includes at least a part of a semiconductor layer sequence having an active layer and an active region configured to be electrically pumped to generate a first light, wherein the longitudinal direction is parallel to a main extension plane of the active layer, and wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light to produce a second light which is partially emitted outwards from the second resonator.

An apparatus may include a diode-pumped solid-state laser oscillator configured to output a pulsed laser beam, a modulator configured to modify an energy and a temporal profile of the pulsed laser beam, and an amplifier configured to amplify an energy of the pulse laser beam. A modified and amplified beam to laser peen a target part may have an energy of about 5J to about 10 J, an average power (defined as energy (J) x frequency (Hz)) of from about 25 W to about 200 W, with a flattop beam uniformity of less than about 0.2. The diode-pumped solid-state oscillator may be configured to output a beam having both a single longitudinal mode and a single transverse mode, and to produce and output beams at a frequency of about 20 Hz.

Structures described herein may include mechanically bonded interlayers for formation between a first Group III-V semiconductor layer and a second semiconductor layer. The mechanically bonded interlayers provide reduced lattice strain by strain balancing between the Group III-V semiconductor layer and the second semiconductor layer, which may be silicon.

A handheld LIBS device and method includes a laser assembly producing two pulsed single spatial mode output beams and a focusing optic which combines the two pulsed single spatial mode output beams at a focal point at a sample. The laser assembly includes a laser assembly housing with an output coupler window for the two pulsed single spatial mode output beams, a gain medium in the laser assembly housing between the output coupler window and an adjustable prism mount in the laser assembly housing holding a prism configured to establish two light paths through the gain medium, a source in the laser assembly housing providing pump energy to the gain medium, and a Q-switch positioned between the prism and the gain medium.

A laser system having a multi-pass amplifier system which includes at least one seed source configured to output at least one seed signal having a seed signal wavelength, at least one pump source configured to output at least one pump signal, at least one multi-pass amplifier system in communication with the seed source and having at least one gain media, a first mirror, and at least a second mirror therein, the gain media device positioned between the first mirror and second mirror and configured to output at least one amplifier output signal having an output wavelength range, the first mirror and second mirror may be configured to reflect the amplifier output signal within the output wavelength range, and at least one optical system may be in communication with the amplifier system and configured to receive the amplifier output signal and output an output signal within the output wavelength range.

A laser is disclosed having a housing formed of a block of glass-ceramic. The block is machined (or otherwise formed) to define one or more channels that act as a waveguide in two dimensions for light within the laser resonator. The channels extend between cavities also formed within the block which retain optical components of the laser, e.g. one or more of the gain medium, cavity mirrors, intermediate reflectors etc. The positioning, shape and size of each cavity is bespoke for the optical component it holds in order that each optical component is retained in optical alignment rigidly against the sides of the cavity.

Laser annealing apparatus includes a plurality of frequency-tripled solid-state lasers, each delivering an output beam of radiation at a wavelength between 340 nm and 360 nm. Each output beam has a beam-quality factor (M.sup.2) greater of than 50 in one transverse axis and greater than 20 in another transverse axis. The output beams are combined and formed into a line-beam that is projected on a substrate being annealed. Each output beam contributes to the length of the line-beam.

A laser apparatus according to the present disclosure includes an excitation light source configured to output excitation light, a laser crystal disposed on an optical path of the excitation light, a first monitor device disposed on an optical path of transmitted excitation light after having transmitted through the laser crystal to monitor the transmitted excitation light, a temperature adjustment device configured to adjust a temperature of the excitation light source to a constant temperature based on a temperature command value, and a controller configured to change the temperature command value based on a result of monitoring by the first monitor device.

A fractional handpiece and systems thereof for skin treatment include a passively Q-switched laser assembly operatively connected to a pump laser source to receive a pump laser beam having a first wavelength and a beam splitting assembly operable to split a solid beam emitted by the passively Q-switched laser assembly and form an array of micro-beams across a segment of skin. The passively Q-switched laser assembly generates a high power sub-nanosecond pulsed laser beam having a second wavelength.