Discrete Power Transistor Package Having Solderless DBC To Leadframe Attach

Abstract

A packaged power transistor device includes a Direct-Bonded Copper (DBC) substrate. Contact pads of a first lead are attached with solderless welds to a metal layer of the DBC substrate. In a first example, the solderless welds are ultrasonic welds. In a second example, the solderless welds are laser welds. A single power transistor realized on a single semiconductor die is attached to the DBC substrate. In one example, a first bond pad of the die is wire bonded to a second lead, and a second bond pad of the die is wire bonded to a third lead. The die, the wire bonds, and the metal layer of the DBC substrate are covered with an amount of plastic encapsulant. Lead trimming is performed to separate the first, second and third leads from the remainder of a leadframe, the result being the packaged power transistor device.

Claims

1-18. (canceled)

19. A method comprising: attaching a first metal layer of a direct-bonded copper (DBC) substrate to at least one lead with an ultrasonic weld thereby forming an assembly, wherein the ultrasonic weld mechanically and electrically couples the first metal layer to the lead, wherein the DBC substrate comprises an insulative layer disposed between the first metal layer and a second metal layer, and wherein an entire surface of the first metal layer contacts the insulative layer after the attaching; attaching one and only one power semiconductor integrated circuit die to the first metal layer of the assembly; surrounding at least the first metal layer and the one and only one power semiconductor integrated circuit die with an amount of encapsulant; leaving at least a portion of the second metal layer of the DBC substrate exposed to form a back side of a packaged power integrated circuit device; and leaving a portion of the lead exposed, wherein the second metal layer is electrically insulated from the first metal layer, and wherein the packaged power integrated circuit device comprises only one semiconductor die.

20. The method of claim 19, wherein the packaged power integrated circuit device conforms to a TO-247 package outline.

21. The method of claim 19, wherein the ultrasonic weld is formed by clamping the DBC substrate and the at least one lead together with not more than about 0.05 Mpa.

22. The method of claim 19, wherein the ultrasonic weld is formed using ultrasonic vibrations of an amplitude of less than approximately 20 micrometers.

23. The method of claim 19, wherein the ultrasonic weld decreases a thickness of a region of the first metal layer in contact with the at least one lead by about 0.05 millimeters.

24. The method of claim 19, wherein the first metal layer has a thickness of at least 0.25 millimeters.

25. A packaged power integrated circuit device comprising: a direct-bonded copper (DBC) substrate comprising an insulative layer disposed between a first metal layer and a second metal layer; one and only one power semiconductor integrated circuit die attached to the first metal layer; at least one lead of a leadframe having a substantially planar surface that is mechanically and electrically coupled to the first metal layer with an ultrasonic weld that decreases a thickness of a region of the first metal layer in contact with the planar surface without separation between the insulative layer and the metal layers of the DBC substrate; and an amount of encapsulant surrounding the one and only one power semiconductor integrated circuit die and at least the first metal layer, and leaving at least a portion of the second metal layer of the DBC substrate exposed to form a back side of the packaged power integrated circuit device, and leaving a portion of the lead exposed, wherein the second metal layer is electrically insulated from the first metal layer.

26. The packaged power integrated circuit device of claim 25, wherein an upper surface of the at least one lead includes nonplaner indentations formed by the ultrasonic weld.

27. The packaged power integrated circuit device of claim 25, wherein the ultrasonic weld is carried out by clamping the DBC substrate and the at least one lead together with not more than about 0.05 Mpa

28. The packaged power integrated circuit device of claim 25, wherein the welding is carried out using ultrasonic vibrations of an amplitude of less than approximately 20 micrometers.

29. The packaged power integrated circuit device of claim 25, wherein the first metal layer has a thickness of at least 0.25 millimeters.

30. The packaged power integrated circuit device of claim 25, wherein the ultrasonic weld decreases the thickness of the region of the first metal layer in contact with the planar surface by about 0.05 millimeters.

31. The packaged power integrated circuit device of claim 25, wherein the packaged power integrated circuit device conforms to a TO-247 package outline.

32. The packaged power integrated circuit device of claim 25, wherein the one and only one power semiconductor integrated circuit die is taken from the group consisting of: a power rectifier die, a power regulator die, a silicon controlled rectifier die, a power bipolar transistor integrated circuit die, a power insulated gate bipolar transistor circuit die, and a power field effect transistor integrated circuit die.

33. The packaged power integrated circuit device of claim 25, wherein the packaged power integrated circuit device includes three leads, and wherein the back side of the packaged power integrated circuit device is electrically insulated from each of the three leads.

34. The packaged power integrated circuit device of claim 25, wherein there is no solder disposed between the first metal layer of the DBC substrate and the one and only one power semiconductor integrated circuit die.

35. A packaged power integrated circuit device comprising: a direct-bonded copper (DBC) substrate comprising an insulative layer disposed between the first metal layer and a second metal layer; one and only one power semiconductor integrated circuit die attached to the first metal layer; at least one lead that is coupled to the first metal layer with an ultrasonic weld formed using ultrasonic vibrations having an amplitude of less than or equal to 20 micrometers and by clamping the DBC substrate and the at least on lead together with no more than 0.05 Mpa, wherein a surface of the first metal layer entirely contacts the insulative layer of the DBC substrate after the ultrasonic weld is formed; and an amount of encapsulant surrounding the one and only one power semiconductor integrated circuit die and at least the first metal layer, leaving at least a portion of the second metal layer of the DBC substrate exposed to form a back side of the packaged power integrated circuit device, and leaving a portion of the lead exposed, wherein the second metal layer is electrically insulated from the first metal layer.

36. The packaged power integrated circuit device of claim 35, wherein the first metal layer has a thickness of at least 0.25 millimeters.

37. The packaged power integrated circuit device of claim 35, wherein the ultrasonic weld decreases the thickness of the region of the first metal layer in contact with the planar surface by about 0.05 millimeters.

38. The packaged power integrated circuit device of claim 35, wherein the packaged power integrated circuit device conforms to a TO-247 package outline.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The accompanying drawings, where like numerals indicate like components, illustrate embodiments of the invention.

[0011] FIG. 1 is a perspective diagram of a Direct-Bonded Copper (DBC) substrate.

[0012] FIG. 2 is a perspective diagram of a leadframe.

[0013] FIG. 3 is a cross-sectional showing the leadframe of FIG. 2 and the DBC substrate of FIG. 1 at the beginning of a package assembly process.

[0014] FIG. 4 is a cross-sectional diagram showing the leadframe and the DBC substrate at a subsequent time in the package assembly process.

[0015] FIG. 5 is a cross-sectional diagram that shows a contact pad and the DBC substrate both immediately before ultrasonic welding and immediately after ultrasonic welding.

[0016] FIG. 6 is a cross-sectional diagram that shows a copper lift off problem associated with a previous nonpublic and non-commercial attempt to ultrasonically weld a DBC substrate to a leadframe.

[0017] FIG. 7 is a cross-sectional diagram that shows an alumina cracking problem associated with the previous nonpublic and non-commercial attempt to ultrasonically weld a DBC substrate to a leadframe.

[0018] FIG. 8 is a table that sets forth parameters of a ultrasonic welding process used to attach DBC substrates to leadframe contact pads in accordance with one novel aspect.

[0019] FIG. 9 is a perspective view of a finished TO-247 packaged discrete power integrated circuit device, where the DBC substrate within the package is ultrasonically welded to contact pads of the center lead (the plastic encapsulant overmolding is not shown).

[0020] FIG. 10 is a diagram of the bottom of the device of FIG. 9 showing the DBC substrate and the bent down extension portion of the center lead (the encapsulant, the emitter and base leads, and the associated bond wires are not shown).

[0021] FIG. 11 is a simplified perspective diagram of a finished TO-247 device, where the DBC substrate is attached to the contact pads of the center lead with a solderless weld in accordance with one novel aspect. The first, second and third leads extend parallel to one another from the amount of encapsulant 34.

[0022] FIG. 12 is a flowchart of a method in accordance with one novel aspect.

[0023] FIG. 13 is a cross-sectional diagram of a second way that a DBC substrate can be connected to contact pads with a solderless weld.

[0024] FIG. 14 is a perspective view of a finished TO-247 packaged power integrated circuit device, where the DBC substrate is laser welded to the contact pads of the center lead (the plastic encapsulant overmolding is not shown).

[0025] FIG. 15 is a table that sets forth parameters of the laser welding process used to laser weld the DBC substrate to the contact pads in the structure of FIG. 14.

DETAILED DESCRIPTION

[0026] Reference will now be made in detail to background examples and some embodiments of the invention, examples of which are illustrated in the accompanying drawings. In the description and claims below, when a first object is referred to as being disposed over or on a second object, it is to be understood that the first object can be directly on the second object, or an intervening object may be present between the first and second objects. Similarly, terms such as front, back, upper, lower, top, bottom, underneath, underlying and down are used herein to describe relative orientations between different parts of the structure being described, and it is to be understood that the overall structure being described can actually be oriented in any way in three-dimensional space.

[0027] FIG. 1 is a perspective diagram of a Direct-Bonded Copper (DBC) substrate 1. DBC substrate 1 involves a substrate layer 2 of an insulative material. Substrate layer 2 is sandwiched between a first (die-side) layer 3 of metal and a second (back-side) layer 4 of metal. The second back-side metal layer 4 is not seen in the perspective view of FIG. 1 because it is located underneath the structure pictured. Arrow 4 indicates that this second back-side metal layer 4 is disposed on the bottom side of the substrate layer 2 in the perspective shown.

[0028] In one example, substrate layer 2 is a layer of an insulative material such as an insulative ceramic. In one example, the insulative ceramic is alumina (Al.sub.2O.sub.3) that is 0.630 mm thick. In one example, first die-side metal layer 3 is a layer of copper plated and a plating of a thin upper layer of nickel. Metal layer 3 is at least 0.25 mm thick (for example, 0.30 mm thick). The nickel plating (optional) is 10 micrometers thick. Metal layer 3 may be referred to as a die-attach pad. Similarly, second back-side metal layer 4 is a layer of copper and a plating of a thin upper layer of nickel. Layer 4 is at least 0.25 mm thick (for example, 0.30 mm thick). The nickel plating (optional) is 10 micrometers thick.

[0029] In one example, DBC substrate 1 is made by placing a first sheet of metal on top of the sheet of alumina, and placing a second sheet of metal under the sheet of alumina. The three sheets are then pressed together in a high temperature furnace such that the metal sheets are mechanically pressed and melted down and fixed to the top and bottom surfaces of the alumina. The outer surfaces of the metal layers take on the somewhat irregular non-planar surfaces of the alumina layer. Irregularities of the alumina transfer through the metal layer sheets. After pressing, the metal sheets are patterned and etched using standard lithographic and etching processes. The resulting etched structure is then sectioned into smaller rectangular pieces. FIG. 1 shows one of these rectangular pieces. The outer edges of the first die-side metal layer are set back from the outer edges of substrate layer 2 so that a later-applied encapsulant will better cover the side edges of the die-side metal layer. The width of substrate layer 2 is about 14.2 mm and the length of layer substrate 2 is about 17.0 mm.

[0030] FIG. 2 is a perspective diagram of a leadframe 5. Leadframe 5 is stamped from a single sheet of thick copper. The copper of the sheet is nickel plated. In another example, bare copper is used. A center portion of leadframe 5 involves a first lead portion 6, a second lead portion 7, and a third lead portion 8. Extending from the first lead portion 6 is a bent down extension portion 10 that terminates in two opposing finger-like contact pads 11 and 12. Extending from second lead portion 7 is a bonding extension portion 9. Extending from third lead portion 8 is a bonding extension portion 13.

[0031] FIG. 3 is a cross-sectional diagram showing leadframe 5 and DBC substrate 1 at the beginning of a package assembly process.

[0032] FIG. 4 is a cross-sectional diagram showing leadframe 5 and DBC substrate 1 at a subsequent time in the package assembly process. The leadframe and the DBC substrate are brought together as illustrated so that each pair of leadframe contact pads makes contact with a corresponding DBC substrate. Each leadframe contact pad is then attached with a solderless weld to a corresponding portion of the first die-side layer of the associated DBC substrate. In one example, the solderless weld is an ultrasonic weld. Sinusoidal waveform 44 is a representation of the relative ultrasonic movement that causes the welding to occur.

[0033] FIG. 5 is a cross-sectional diagram that shows contact pad 12 and the edge of first die-side metal layer 3 in further detail both immediately before ultrasonic welding and immediately after ultrasonic welding. As a result of the ultrasonic welding, contact pad 12 is pressed down into and past the upper surface 45 of first die-side layer 3 by approximately 0.05 millimeters. In one example, there is no solder disposed between the upper surface of first metal layer 3 and contact pad 12. As contact pad 12 is vibrated back and forth relative to DBC substrate 1 during the ultrasonic welding process, an amount of metal 14 may pile up at the side edge 15 of contact pad 12 as pictured in the right portion of FIG. 5. The weld is a solderless weld.

[0034] Previous nonpublic and non-commercial attempts to ultrasonically weld DBC substrates to leadframes in the TO-247 outline package set forth in U.S. Pat. No. 6,404,065 have been made. These attempts were, however, considered unsuccessful. Copper lift off as illustrated in FIG. 6 occurred. The leadframe 16 was ultrasonically welded to the die-side metal layer 17 but the ultrasonic energy used caused the die-side metal layer 17 to separate in places from the ceramic layer 18 of the DBC substrate. In some cases, the leadframe 19 was ultrasonically welded to the die-side metal layer 20 but the alumina substrate 21 cracked as illustrated in FIG. 7 occurred. Reference numerals 41-43 identify representations of three such cracks.

[0035] FIG. 8 is a table that sets forth parameters of the ultrasonic welding process used to attach DBC substrates to leadframe contact pads in accordance with one novel aspect. In one example, each ultrasonic weld is carried out using 20 kHz ultrasonic vibrations, having a peak-to-peak vibration amplitude of less than or equal to approximately 20 micrometers, for 0.25 seconds, under a welding pressure of not more than 0.05 Mpa. When the parameters of FIG. 8 are used in the ultrasonic welding process, little or none of the lift off and cracking illustrated in FIG. 6 and FIG. 7 are seen to occur. After ultrasonic welding of DBC substrates to the leadframe, a single power integrated circuit die is attached to the die-side metal layer of each DBC substrate. The single power integrated circuit die may, for example, be a power rectifier die, a power regulator die, a silicon controlled rectifier die, a power bipolar transistor integrated circuit die, a power insulated gate bipolar transistor circuit die, or a power field effect transistor integrated circuit die.

[0036] Next, bond pads on the top surfaces of the integrated circuit dice are wire bonded in conventional fashion to the corresponding wire bond portions of the corresponding leads of the leadframe. After wire bonding, each die is overmolded with an amount of plastic encapsulant in conventional fashion. The back-side metal layer of each DBC substrate is, however, left at least partially exposed and is not entirely overmolded. After encapsulation, conventional lead trimming is performed to cut individual TO-247 packaged devices from the leadframe. The wirebonding, the overmolding with encapsulant, and the trimming of interconnection portions of the leadframe to make the individual packaged devices are processes known in the art.

[0037] FIG. 9 is a perspective view of one such finished TO-247 packaged device 22 with its plastic encapsulant overmolding not shown. The upper surfaces of contact pads 11 and 12 have nonplanar waffle-like indentations and contours 23. The indentations may be of the shape of intersecting rows and columns of V-shaped trenches. These indentations and contours 23 are a result of the force applied by an ultrasonic welding head. During the compressive force of the ultrasonic welding process, teeth or ridges on the bottom of the ultrasonic head cut down into the upper surface of the contact pads, thereby leaving the waffle-like indentations that correspond to the shape of the teeth or ridges. The type of marks left need not be waffle-like indentations rather may be nonplanar structures of another shape depending on the structure of the gripping bottom surface of the ultrasonic head.

[0038] One and only one power semiconductor integrated circuit die 24 is die-attached to the first die-side metal layer 3 of DBC substrate 1. In the illustrated example, integrated circuit 24 is a discrete power bipolar transistor integrated circuit die. The bottom side of die 24 is the collector electrode 25. Collector electrode 25 is electrically and mechanically connected to the upper surface of the first die-side metal layer 3, and through this layer of metal and through contact pads 11 and 12, and bent down extension portion 10, to the center lead 6 of the TO-247 packaged device 22. An emitter contact pad 26 on the upper surface of die 24 is electrically coupled via multiple aluminum bond wires 27-29 to the lead extension portion 9 of packaged device 22. A base contact pad 30 on the upper surface of die 24 is electrically coupled via bond wire 31 to lead extension portion 13 of packaged device 22. The emitter and base leads 7 and 8 are held in place in the positions illustrated in FIG. 9 by the plastic encapsulant. The locations of the ultrasonic welds at the interfaces between the bottom of contact pads 11 and 12 and the top surface of die-side metal layer 3 are roughly identified by arrows 32 and 33.

[0039] FIG. 10 is a diagram of the bottom of the device of FIG. 9, showing the DBC substrate 1 and bent down extension portion 10 of the center lead. The encapsulant, the emitter and base leads, and the associated bond wires, are not shown in the simplified diagram of FIG. 10.

[0040] FIG. 11 is a simplified perspective diagram of the finished TO-247 device 22. The amount of plastic encapsulant 34 is shown. This encapsulant 34 covers the die 24, the bond wires 27-29 and 31, and the upper die-side metal layer 3 of the DBC substrate 1. The back-side metal layer 4 of DBC substrate 1 is not covered with encapsulant, but rather is exposed and forms the backside of the packaged device 22. This back-side metal layer 4 is not shown in FIG. 11 because it is the bottom side of the device pictured in the FIG. 11.

[0041] FIG. 12 is a flowchart of a method 100 in accordance with one novel aspect. A first metal layer of a DBC substrate is attached to at least one lead with a solderless weld, thereby forming an assembly (step 101). The solderless weld may be an ultrasonic weld. The solderless weld may be a laser weld. In one example, a first of the leads is a lead involving contact pads 11 and 12, bent portion 10, and lead portion 7; a second of the leads is a lead involving portion 9 and lead portion 6; and a third of the leads is a lead involving portion 13 and lead portion 8. In another step (step 102), one and only one power semiconductor integrated circuit is attached to the first metal layer of the assembly. The resulting DBC substrate and lead assembly is then incorporated (step 103) into a packaged power integrated circuit device. In one example, this incorporation involves wire bonding the die to the second and third leads, involves encapsulating the die and DBC/lead assembly, and involves lead trimming to form the resulting packaged power integrated circuit device. In one example, the resulting packaged power integrated circuit device conforms to the TO-247 outline and is the package 22 of FIG. 11.

[0042] FIG. 13 is a diagram of a second way that DBC substrate 1 can be connected to contact pads 11 and 12 with a solderless weld. Rather than being ultrasonically welded, laser light source device 35 and laser light 36 are used to laser weld contact pads 11 and 12 to the die-side metal layer 3 of DBC substrate 1. Laser light 36 provides localized heating to carry out the weld. The term laser is used here loosely. Energy from a high energy light source (whether laser light or another type of light) is used to heat small localized portions of contact pads 11 and 12 and thereby to weld the contact pads to the underlying metal layer 3. In one example, there is no intervening solder disposed between the contact pads 11 and 12 and the underlying metal layer 3. The weld is a solderless weld.

[0043] FIG. 14 is a perspective view of a finished packed integrated circuit device 37 without its amount of encapsulant overmolding. The structure 37 of FIG. 14 is similar to the structure of FIG. 9, except that in the case of the structure 37 of FIG. 14 the contact pads 11 and 12 have been laser welded to DBC substrate 1. The upper surface of each of contact pads 11 and 12 is has a row of five mound-shaped protrusions and corresponding pits. Reference numeral 38 identifies the right most such mound-shaped protrusion and pit structure on the top surface of contact pad 12. Each mound and pit structure is formed as a result of application of pulses of laser energy. The pulses of laser energy locally heat part of a contact pad to a molten state and cause it to fuse to a part of the upper surface of die-side metal layer 3 of the DBC substrate. The locations of the laser welds at the interfaces between the bottom of contact pads 11 and 12 and the top surface of die-side metal layer 3 are roughly identified by arrows 39 and 40.

[0044] FIG. 15 is a table that sets forth parameters of the laser welding process used to weld the DBC substrate 1 of FIG. 14 to the contact pads 11 and 12 of FIG. 14 to make the packaged device of FIG. 14.

[0045] In one example, the packaged semiconductor device, the DBC substrate of the packaged semiconductor device, and the leads of the packaged semiconductor device are as described in U.S. Pat. No. 6,404,065. The packaged semiconductor device may conform to a package outline, such as the TO-220 outline, the TO-264 outline, or the SOT-227B outline. For additional information on the packaged semiconductor device, and for additional detail on its constituent parts and how to make them, see: U.S. Pat. No. 6,404,065, U.S. Pat. No. 4,483,810, and U.S. Pat. No. 6,727585 (the entire subject matter of each of these three patent documents is incorporated herein by reference).

[0046] Although certain specific embodiments are described above for instructional purposes, the teachings of this patent document have general applicability and are not limited to the specific embodiments described above. Accordingly, various modifications, adaptations, and combinations of various features of the described embodiments can be practiced without departing from the scope of the invention as set forth in the claims.