FREQUENCY-VARIABLE TERAHERTZ OSCILLATOR AND METHOD FOR MANUFACTURING THE SAME

Abstract

A small-sized frequency-variable terahertz oscillator has a successive and large frequency-sweeping width even at a room temperature. The frequency-variable terahertz oscillator includes a slot antenna, a resonant tunneling diode and a varactor diode arranged parallel to each other along the slot antenna. The frequency-variable terahertz oscillator oscillates in a terahertz frequency range when the resonant tunneling diode and the varactor diode are separately applied with a direct voltage.

Claims

1-9. (canceled)

10. A frequency-variable terahertz oscillator, comprising: a slot antenna; and a resonant tunneling diode and a varactor diode arranged in parallel each other along said slot antenna, wherein said frequency-variable terahertz oscillator oscillates in a terahertz frequency band when said resonant tunneling diode and said varactor diode are applied with a direct voltage separately.

11. A frequency-variable terahertz oscillator, comprising: an InP substrate; a semiconductor multilayer film 1, which forms a resonant tunneling diode, disposed on said InP substrate; a semiconductor multilayer film 2, which forms a varactor diode, disposed on said semiconductor multilayer film 1; and a highly-doped InP layer disposed between said semiconductor multilayer film 1 and said semiconductor multilayer film 2.

12. The frequency-variable terahertz oscillator according to claim 10, comprising: a slot antenna; a double-barrier resonant tunneling diode of AlAs/InGaAs and a varactor diode arranged in parallel each other along said slot antenna; and metal/insulator/metal (MIM) capacitors formed by a feed line provided to each of said resonant tunneling diode and said varactor diode so as to across said slot antenna, wherein said frequency-variable terahertz oscillator oscillates in a terahertz frequency band by applying, by said feed lines, a direct voltage separately to said resonant tunneling diode and said varactor diode.

13. The frequency-variable terahertz oscillator according to claim 11, comprising: a slot antenna; a double-barrier resonant tunneling diode of AlAs/InGaAs and a varactor diode arranged in parallel each other along said slot antenna; and metal/insulator/metal (MIM) capacitors formed by a feed line provided to each of said resonant tunneling diode and said varactor diode so as to across said slot antenna, wherein said frequency-variable terahertz oscillator oscillates in a terahertz frequency band by applying, by said feed lines, a direct voltage separately to said resonant tunneling diode and said varactor diode.

14. The frequency-variable terahertz oscillator according to claim 10, wherein a resistor of an n-type semiconductor is disposed between an upper electrode and said MIM capacitors on said resonant tunneling diode side.

15. The frequency-variable terahertz oscillator according to claim 11, wherein a resistor of an n-type semiconductor is disposed between an upper electrode and said MIM capacitors on said resonant tunneling diode side.

16. The frequency-variable terahertz oscillator according to claim 10, wherein said resonant tunneling diode is configured by layers of n+InGaAs (510.sup.19 cm.sup.3, 100 nm)/spacer InGaAs (undoped, 12 nm)/barrier AlAs (undoped, 0.9 nm)/well InGaAs (undoped, 3 nm)/barrier AlAs (undoped, 0.9 nm)/spacer InAlGaAs (undoped, 2 nm)/n-InAlGaAs (310.sup.18 cm.sup.3, 25 nm)/n+InGaAs (510.sup.19 cm.sup.3, 400 nm).

17. The frequency-variable terahertz oscillator according to claim 11, wherein said resonant tunneling diode is configured by layers of n+InGaAs (510.sup.19 cm.sup.3, 100 nm)/spacer InGaAs (undoped, 12 nm)/barrier AlAs (undoped, 0.9 nm)/well InGaAs (undoped, 3 nm)/barrier AlAs (undoped, 0.9 nm)/spacer InAlGaAs (undoped, 2 nm)/n-InAlGaAs (310.sup.18 cm.sup.3, 25 nm)/n+InGaAs (510.sup.19 cm.sup.3, 400 nm).

18. The frequency-variable terahertz oscillator according to claim 10, wherein said varactor diode is configured by three layers of p+InGaAs (110.sup.20 cm.sup.3, 100 nm)/nInGaAs (610.sup.16 cm.sup.3, 400 nm)/n+InGaAs (510.sup.19 cm.sup.3, 100 nm).

19. The frequency-variable terahertz oscillator according to claim 11, wherein said varactor diode is configured by three layers of p+InGaAs (110.sup.20 cm.sup.3, 100 nm)/nInGaAs (610.sup.16 cm.sup.3, 400 nm)/n+InGaAs (510.sup.19 cm.sup.3, 100 nm).

20. The frequency-variable terahertz oscillator according to claim 10, wherein said MIM capacitors are configured to be open with a direct current and to short-circuit in a terahertz band.

21. The frequency-variable terahertz oscillator according to claim 11, wherein said MIM capacitors are configured to be open with a direct current and to short-circuit in a terahertz band.

22. The frequency-variable terahertz oscillator according to claim 10, wherein an etch stopper layer of n+InP is introduced between said varactor diode and said resonant tunneling diode.

23. The frequency-variable terahertz oscillator according to claim 11, wherein an etch stopper layer of n+InP is introduced between said varactor diode and said resonant tunneling diode.

24. A method for manufacturing a frequency-variable terahertz oscillator, the method comprising the steps of: vapor-depositing a varactor diode electrode; forming a varactor diode mesa by wet etching using a sulfuric acid-based etchant; allowing said wet etching to automatically stop at an n+InP layer with said n+InP layer below said varactor diode layer not etched with said sulfuric acid-based etchant; vapor-depositing an RTD electrode and then producing an RTD mesa by wet etching with said sulfuric acid-based etchant; forming an upper electrode and a lower electrode and forming a slot antenna; depositing SiO.sub.2 entirely thereon by a CVD method; forming contact holes; and connecting said upper electrode with said RTD and said VD.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In the accompanying drawings:

[0022] FIG. 1 is a perspective structural view illustrating an example of a conventional terahertz oscillator using an RTD;

[0023] FIG. 2 is a characteristic diagram showing an example of a characteristic of the RTD;

[0024] FIG. 3 is an equivalent circuit diagram of the conventional terahertz oscillator using the RTD;

[0025] FIG. 4 is a perspective view and a detailed view illustrating an exemplary configuration of a terahertz oscillator according to the present invention;

[0026] FIGS. 5A to 5C are cross-sectional structural views of the terahertz oscillator according to the present invention;

[0027] FIG. 6 is an equivalent circuit diagram of the terahertz oscillator according to the present invention;

[0028] FIG. 7 is a cross-sectional view illustrating an exemplary layer structure of a varactor diode;

[0029] FIG. 8 is an equivalent circuit diagram of FIG. 7;

[0030] FIG. 9 is a cross-sectional view illustrating an exemplary layer structure of a varactor integrated-RTD oscillator;

[0031] FIG. 10 is a characteristic diagram showing a relation between a bias voltage and the intensity;

[0032] FIG. 11 is a characteristic diagram showing a relation between the bias voltage and the oscillation frequency;

[0033] FIG. 12 is a characteristic diagram showing a relation between the oscillation frequency and the output power;

[0034] FIG. 13 is a characteristic diagram illustrating exemplary variations in the oscillation frequency with respect to the bias voltage applied to the varactor diode;

[0035] FIG. 14 is a characteristic diagram showing a dependency of the RTD mesa area with a fixed antenna length;

[0036] FIG. 15 is a characteristic diagram illustrating characteristics of frequency-sweep ranges of with a fixed RTD mesa area;

[0037] FIG. 16 is a characteristic diagram for explaining dependency of the varactor mesa area;

[0038] FIG. 17 is a characteristic diagram illustrating exemplary variations in the output with respect to the oscillation frequency;

[0039] FIGS. 18A and 18B include a plan view and a cross-sectional view, respectively, illustrating a part of a manufacturing process of the terahertz oscillator according to the present invention;

[0040] FIGS. 19A and 19B are respectively a plan view and a cross-sectional view illustrating a part of a manufacturing process of the terahertz oscillator according to the present invention;

[0041] FIGS. 20A to 20C are respectively plan views and cross-sectional views illustrating a part of a manufacturing process of the terahertz oscillator according to the present invention;

[0042] FIGS. 21A to 21C are respectively plan views and cross-sectional views illustrating a part of a manufacturing process of the terahertz oscillator according to the present invention;

[0043] FIG. 22 is a plan view illustrating another exemplary configuration of a terahertz oscillator according to the present invention; and

[0044] FIG. 23 is a diagram for explaining exemplary application of the present invention.

MODE FOR CARRYING OUT THE INVENTION

[0045] In the present invention, a terahertz oscillator using a double-barrier type resonant tunneling diode (RTD) is integrated with a varactor diode (VD) where a capacitance thereof can be varied in accordance with an applied voltage. Proposed is a terahertz oscillator structure capable of a wide-range sweeping of the oscillation frequency at a room temperature. Conventional solid-state oscillators in the terahertz frequency range do not include a room temperature oscillator, which can be used for measuring an absorption spectrum unique to a substance, having a wide range of frequency-variability.

[0046] Solid-state electronic devices capable of oscillating at 500 GHz or more at a room temperature (e.g. approximately 0 to 30 C.) include resonant tunneling diodes only. In the present invention, by integrating the varactor diode with a variable capacitance with the resonant tunneling diode terahertz oscillator including a slot antenna, the frequency-variability in the terahertz frequency range is implemented. A wide frequency-sweeping is enabled by adjusting a doping concentration of the varactor diode, a mesa area of each of the resonant tunneling diode and the varactor diode, or the length of the slot antenna. In a quite high frequency range such as the terahertz band, the wavelength is shorter than that of millimeter waves and approximates the mesa size of the varactor diode. Thus, the impedance of the varactor diode is not represented by simple resistors and capacitors, resulting in distributed constant characteristics where the resistors, the inductors and the capacitors are connected in a complex manner. In order to accurately simulate a test, therefore, it is required to perform a calculation including a capacitance variability characteristic of the varactor diode considering the distributed constant characteristic in the terahertz band by incorporating a detailed model of the mesa of the varactor diode into an electromagnetic field simulator.

[0047] In the present invention, the terahertz oscillator includes the slot antenna disposed substantially in the central portion of an electrode and a resonant tunneling diode mesa and a varactor diode mesa are integrated in parallel (opposite each other or in the same direction) in the slot antenna. Since the capacitance varies depending on the applied voltage to the varactor diode, the oscillation frequency can be variable. As for the capacitance variations of the varactor diode, incorporating a detailed model of the varactor diode into the electromagnetic field simulator allows for calculating the variations in the distributed constant impedance (in an equivalent circuit diagram, the varactor diode is represented by a simplified model with a resistance and a capacitance in order to illustrate the principal of the frequency-variability in an easily understandable and simple manner).

[0048] In the present invention, the slot antenna is disposed and the resonant tunneling diode and the varactor diode are arranged in parallel each other along the slot antenna. The frequency-variable terahertz oscillator oscillates in a terahertz frequency range when the resonant tunneling diode and the varactor diode are applied with a direct voltage separately. A semiconductor multilayer film 1, which forms the resonant tunneling diode, is disposed on an InP substrate and a semiconductor multilayer film 2, which forms the varactor diode, is disposed on the semiconductor multilayer film 1. A highly-doped InP layer is disposed between the semiconductor multilayer film 1 and the semiconductor multilayer film 2.

[0049] The variable range (sweeping range) of the terahertz oscillation frequency varies according to the doping concentration of the varactor diode. There is a doping concentration with which the variable range is maximized. There is also a mesa area with which the variable range of frequency of each of the resonant tunneling diode and the varactor diode is maximized. A shortening the slot antenna allows the central frequency of the variable frequencies to be shifted to a high frequency side. It is possible to vary the oscillation frequency by changing the length of the slot antenna.

[0050] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0051] FIG. 4 is a perspective view of the terahertz oscillator according to the present invention, and FIG. 5A is a plan view. FIG. 5B is a cross-sectional structural view along a line X1-X1 in FIG. 5A, and FIG. 5C is a cross-sectional structural view along a line X2-X2 in FIG. 5A.

[0052] A slot antenna 20 of a rectangular shape is disposed substantially in the central portion and a double-barrier RTD (resonant tunneling diode) 10 of AlAs/InGaAs and a varactor diode (VD) 40 are disposed in parallel each other along the slot antenna 20. The RTD 10 employs a double-barrier structure formed by layers of n+InGaAs (510.sup.19 cm.sup.3, 100 nm)/spacer InGaAs (undoped, 12 nm)/barrier AlAs (undoped, 0.9 nm)/well InGaAs (undoped, 3 nm)/barrier AlAs (undoped, 0.9 nm)/spacer InAlGaAs (undoped, 2 nm)/n-InAlGaAs (310.sup.18 cm.sup.3, 25 nm)/n+InGaAs (510.sup.19 cm.sup.3, 400 nm) in the order mentioned from the top to the bottom. The peak current density of the RTD 10 is 18 mA/m.sup.2 and the peak-to-valley current ratio is 2.

[0053] The varactor diode 40 is configured with three layers of p+InGaAs (110.sup.20 cm.sup.3, 100 nm)/nInGaAs (610.sup.16 cm.sup.3, 400 nm)/n+InGaAs (510.sup.19 cm.sup.3, 100 nm) in the order mentioned from the top to the bottom. Applying a reverse voltage (direction in which a potential of n+InGaAs decreases with respect to p+InGaAs) results in a depletion layer spreading in the middle nInGaAs, thereby allowing the capacitance to be variable due to the voltage. The doping concentration of the varactor diode 40 in the above descriptions refers to the above nInGaAs layer. Since the doping concentration of p+InGaAs is high, a depletion layer spreads only within nInGaAs. The RTD 10 has an area of 1.1 m.sup.2, the varactor diode 40 has an area of 6 m.sup.2, and the slot antenna 20 has a length of 20 m and a width of 4 m.

[0054] Each of feed lines (upper electrodes 32 and 35) is provided to each of the RTD 10 and the varactor diode 40 across the slot antenna 20 and a metal/insulator/metal (MIM) capacitor to be open with a direct current and to short-circuit in the terahertz is thereby formed. That is, in the RTD 10, an insulator 33 formed by SiO.sub.2 or the like and other substances is disposed between the upper electrode 32 and the lower electrode. In varactor diode 40, an insulator 34 formed by SiO.sub.2 and other substances is disposed between the upper electrode 35 and the lower electrode. This structure allows the RTD 10 and the varactor diode 40 to be separately applied with a direct voltage. The MIM capacitor short-circuits in the terahertz frequency range, thereby confining an electromagnetic field within the slot antenna 20 to form a resonator. In order to suppress a parasitic oscillation due to a negative resistance of the RTD 10 and an external power source circuit, a resistor 33A formed by an n-type semiconductor is disposed between the upper electrode 32 and the MIM capacitor on the RTD 10 side. This resistor 33A is connected in parallel to the RTD 10 and thus the negative resistance is cancelled out when the oscillator is observed from the external power source circuit and the negative resistance becomes invisible to the external circuit. Therefore, unnecessary parasitic oscillation attributable to the external circuit can be suppressed.

[0055] An equivalent circuit of the terahertz oscillator of the present invention is as illustrated in FIG. 6 with a bias disregarded. The varactor diode 40 is represented by a variable capacitance Cv and a variable series resistance Rv as illustrated in FIG. 7. Applying a voltage results in spreading of the depletion layer and thus the variable capacitance Cv becomes smaller. The series resistance RI-Vs a resistance in the nInGaAs layer that remains without turning into the depletion layer and thus decreases when the voltage is applied thereto. This series resistance Rv and the variable capacitance Cv in series connection can be converted into parallel connection of a conductance Gv and a capacitance Cv as shown in FIG. 8. An admittance Y here is represented by the middle expression of the following Formula 3.

[0056] Further, in an oscillation frequency range, since the value CvRv in the denominator is small, the expression able to be simplified as in the right side. Here, in the equivalent circuit in parallel connection in FIG. 8, the conductance GI-Vs expressed as in the following Formula 4. The differential negative conductance G.sub.RTD of the RTD 10 cancels out an antenna loss G.sub.ant and a loss Gv due to resistance part of the varactor diode 40, thereby resulting in oscillation. Then, at a point where the admittance Y of the entire circuit becomes zero, an oscillation frequency f.sub.OSC is determined. The oscillation frequency f.sub.OSC has conditions for initiation of oscillation as expressed by the following Formula 5 where the inductance of the antenna 20 is denoted as L.sub.ant, the capacitance of the antenna is denoted as C.sub.ant, the capacitance of the RTD 10 is denoted as C.sub.RTD, and the capacitance of the varactor diode 40 is denoted as Cv. The oscillation frequency f.sub.OSC is expressed by the following Formula 6.

[00001]$\begin{array}{cc}Y=\frac{{\left(.Math..Math.C_V\right)}^2.Math.R_V}{1+{\left(C_V.Math.R_V\right)}^2}+j.Math..Math.\frac{C_V}{1+{\left(.Math..Math.C_V.Math.R_V\right)}^2}={\left(.Math..Math.C_V\right)}^2.Math.R_V+j.Math..Math..Math..Math.C_V& \left[\mathrm{Formula}.Math..Math.3\right]\end{array}$
G.sub.V=(C.sub.V).sup.2R.sub.V[Formula 4]

G.sub.RTDG.sub.ant+Gv[Formula 5]

[00002]$\begin{array}{cc}{f}_{\mathrm{osc}}=\frac{1}{2.Math..Math.\sqrt{L_{\mathrm{ant}}\left(C_V+C_{\mathrm{ant}}+C_{\mathrm{RTD}}\right)}}& \left[\mathrm{Formula}.Math..Math.6\right]\end{array}$

[0057] As shown in FIG. 7, since the capacitance Cv of the depletion layer varies based on the changing of the bias voltage to the varactor diode 40, the oscillation frequency f.sub.OSC is also variable. Generally, if the doping concentration decrease, then the withstand voltage increases and a variable width of the capacitance becomes large. With a low doping concentration, however, the resistance Rv increases and thus the conductance Gv also increases, letting the start condition for the oscillation of the Formula 5 be unlikely to be satisfied. Therefore, there is an optimum value for the doping concentration.

[0058] FIG. 9 is a diagram illustrating an exemplary layer structure of a varactor integrated-RTD oscillator. The varactor diode 40 is configured with three layers of p+InGaAs (110.sup.20 cm.sup.3, 100 nm)/nInGaAs (610.sup.16 cm.sup.3, 400 nm)/n+InGaAs (510.sup.19 cm.sup.3, 100 nm) in the order mentioned from the top to the bottom. Applying a reverse voltage (direction in which a potential of n+InGaAs decreases with respect to p+InGaAs) results in the depletion layer spreading in the middle nInGaAs, thereby allowing the capacitance to be variable according to the voltage. Since the doping concentration of p+InGaAs is high, the depletion layer spreads only within nInGaAs. The RTD 10 employs a double-barrier structure formed with layers of n+InGaAs (510.sup.19 cm.sup.3, 100 nm)/spacer InGaAs (undoped, 12 nm)/barrier AlAs (undoped, 0.9 nm)/well InGaAs (undoped, 3 nm)/barrier AlAs (undoped, 0.9 nm)/spacer InAlGaAs (undoped, 2 nm)/n-InAlGaAs (310.sup.18 cm.sup.3, 25 nm)/n+InGaAs (510.sup.19 cm.sup.3, 400 nm) in the order mentioned from the top to the bottom. The peak current density of the RTD 10 is 18 mA/m.sup.2 and the peak-to-valley current ratio is 2.

[0059] Variations in the oscillation spectrum with respect to the varactor diode voltage are shown in FIG. 10. Dependency of the oscillation frequency on the varactor diode voltage is shown in FIG. 11. Fixing an applied voltage to the RTD 10 approximately at 1 V and changing the bias voltage from 0.5 V to 4.0 V allows for obtaining a sweeping width of 70 GHz from 620 GHz to 690 GHz as shown in FIGS. 0.10 and 11. With a varactor area of 6 m.sup.2, this substantially corresponds with a theoretical value. An area of the RTD 10 is 1.1 m.sup.2. Using a varactor diode having a large area (16 m.sup.2) allows for enlargement of the sweeping width. FIG. 12 shows a relation between the oscillation frequency and the output power. As the oscillation frequency increases, the output power also increases.

[0060] Next, the dependency on the varactor doping concentration will be described.

[0061] FIG. 13 illustrates exemplary variations in the oscillation frequency with respect to the bias voltage applied to the varactor diode. The frequency varies according to the bias voltage as well as the doping concentration. The breakdown voltage (V) with respect to the doping concentration (cm.sup.3) and the maximum thickness of the depletion layer (nm) are as shown in the following Table 1. The conductivity (S/m), the maximum resistance value (m), and the frequency-sweep range (GHz) are as shown in the following Table 2.

TABLE-US-00001 TABLE 1 MAXIMUM THICKNESS OF CONCENTRATION BREAKDOWN DEPLETION (cm.sup.3) VOLTAGE (V) LAYER (nm) 3 10.sup.16 12 800 6 10.sup.16 7 400 1 10.sup.17 5 300

TABLE-US-00002 TABLE 2 MAXIMUM CONDUCTIVITY RESISTANCE FREQUENCY SWEEP (S/m) VALUE (m) RANGE (GHz) 3800 210 1070-1150 7700 50 930-1100 13000 20 900-1030

[0062] FIG. 14 is a characteristic diagram showing the dependency on the RTD mesa area. The oscillation frequency varies according to the size of the RTD mesa area. When the RTD mesa area is small, the oscillator can oscillate from high frequencies but with a narrow frequency-sweep range since the differential negative conductance is small. On the other hand, when the RTD mesa area is large the RTD capacitance is also large and thus the maximum oscillation frequency is small. Therefore, there is an RTD mesa area where the frequency-sweep range, which is a difference between the maximum oscillation frequency and the lower limit frequency, is maximized. The possible maximum sweep range that the RTD oscillator having an antenna length of 20 m and a varactor mesa area of 16 m.sup.2 may have is 240 GHz from 500 GHz to 740 GHz with an RTD mesa area of 1.3 m.sup.2.

[0063] FIG. 15 is a characteristic diagram showing the dependency on the RTD area of the frequency-sweep range with respect to the antenna length. The frequency range varies according to the antenna length but a width of variation range has no significant difference. Shortening the antenna length allows for reducing the inductance L.sub.ant and the capacitance C.sub.ant of the slot antenna 20 and thus oscillation at a high frequency is enabled. However, the lower limit frequency also increases at the same time. On the other hand, extending the antenna length increases the inductance L.sub.ant and the capacitance C.sub.ant and thus the maximum oscillation frequency decreases. However, the lower limit frequency also decreases at the same time. As the antenna length is short the RTD mesa area capable of oscillating increases. This is because a shorter antenna length results in an increased antenna loss and thus a large differential negative conductance is required in order to satisfy the oscillation conditions.

[0064] FIGS. 14 and 15 are characteristic diagrams having the same form but with different central frequency in variable frequency ranges due to differences in the antenna length. FIG. 15 is a diagram illustrating variations in variable ranges when the mesa area is fixed to 1.1 m.sup.2. Therefore, although the type of characteristic is the same, FIG. 14 illustrates the characteristic with a fixed antenna and varying mesa areas while FIG. 15 illustrates the characteristic with a fixed mesa and varying antenna lengths.

[0065] FIG. 16 illustrates the dependency on the varactor mesa area. Shrinkage of the varactor mesa area results in an increase in the variable width at high frequencies. Since the variable width of the varactor capacitance is scaled by the area, the frequency-sweep range varies. Since the varactor capacitance decreases due to the shrinkage of the varactor mesa area, oscillation at a high frequency is enabled. However, the maximum value of the capacitance decreases and thus the lower limit frequency also increases at the same time. On the other hand, when the varactor mesa area is large the varactor capacitance increases and the maximum oscillation frequency decreases. However, the maximum value of the capacitance increases and thus oscillation enabled even at low frequencies.

[0066] For the frequency-sweeping at the high frequency, it is only required that the RTD mesa area be small, the antenna length be short, and the varactor mesa area be small. For the frequency-sweeping at the low frequency, it is only required that the RTD mesa area be large, the antenna length be long, and the varactor mesa area be large.

[0067] FIG. 17 is a diagram illustrating exemplary variations in output with respect to the oscillation frequency. As the antenna length becomes longer and the RTD mesa area becomes larger, the output increases. Integrating, into a single chip, a plurality of oscillators having different antenna lengths, RTD mesa areas, and varactor areas and causing them to operate separately result in obtaining an oscillator having a wide sweeping width of frequency. The longer the antenna length is, the larger the radiation conductance is and thus the output is large. When the antenna length is the same, the larger the mesa area is the larger the differential negative conductance is and thus the output is large. Integrating, into a single chip, oscillators having different RTD mesa areas, antenna lengths, and varactor mesa areas and causing each of them to operate with a separate bias result in obtaining a wide sweeping width of frequency. For example, integrating five oscillators enables the frequency-sweeping for a range of 900 GHz from 100 GHz to 1.2 THz.

[0068] FIG. 18 to FIG. 21 are diagrams showing an example of a manufacturing process of the terahertz oscillator according to the present invention. First, a varactor diode electrode is vapor-deposited as illustrated in FIGS. 18A and 18B and then a varactor diode mesa is formed by wet etching using a sulfuric acid-based etchant. An n+InP layer below the varactor diode layer is not etched by the sulfuric acid-based etchant and thus wet etching automatically stops at this layer, thereby simplifying the production.

[0069] Next, an RTD electrode is vapor-deposited as illustrated in FIGS. 19A and 19B and then an RTD mesa is produced by wet etching using the sulfuric acid-based etchant. Thereafter, an upper electrode and a lower electrode are formed as illustrated in FIG. 20A and a slot antenna is also formed. Next, SiO.sub.2 is deposited entirely thereon by the CVD method. Then SiO.sub.2 is removed while SiO.sub.2 on the upper electrode, the lower electrode, the RTD, the VD, and a part that forms a resistor using n+InGaAS is allowed to remain as illustrated in FIG. 20B. With this as a mask, an element isolation process of etching an n+InGaAs layer remaining below those elements is performed. As a result of this, the configuration illustrated in FIG. 20C is obtained. The left side in FIG. 20C is a cross-sectional view of the RTD portion and the right side in FIG. 20C is a cross-sectional view of the VD portion. In the cross-sectional view of the RTD portion, the n+InGaAS layer between the upper electrode and the lower electrode forms the resistor connected in parallel to the RTD.

[0070] Thereafter, contact holes are formed at portions corresponding to top parts of the RTD and the VD and electrode pods of the upper electrode and the lower electrode as illustrated in FIG. 21A. Connecting the upper electrode with the RTD and the VD as illustrated in FIG. 21B results in obtaining the completed product illustrated in FIG. 21C. The left side in FIG. 21C is a cross-sectional view of the RTD portion and the right side in FIG. 21C is a cross-sectional view of the VD portion.

[0071] It should be noted that the RTD and the VD are arranged opposite each other in the aforementioned embodiments, however, the RTD and the VD may be arranged in parallel in the same direction as illustrated in FIG. 22.

[0072] The present invention is not limited the embodiments for implementing the aforementioned invention and may employ various configurations without departing from the principals of the present invention.

INDUSTRIAL APPLICABILITY

[0073] Using a fine device, of the present invention, capable of changing the frequency by a wide range allows for implementing a compact chip to measure absorption spectra of the substances in the terahertz frequency range. This can accelerate further progress in the field of chemistry and medicine. FIG. 23 shows an exemplary case where the present invention is utilized as a spectroscopic analysis chip. The spectroscopic analysis of a solution can be performed by irradiating the target solution placed on a dielectric film with THz waves from the terahertz oscillator capable of frequency-sweeping and detecting a penetrated output by the THz detector.

EXPLANATION OF REFERENCE NUMERALS

[0074] 1 resonant tunneling diode (RTD) [0075] 2 slot antenna [0076] 3 substrate [0077] 4 lower electrode [0078] 5 upper electrode [0079] 10 resonant tunneling diode (RTD) [0080] 20 slot antenna [0081] 40 varactor diode (VD)