Heat dissipation solution for advanced chip packages
09653378 ยท 2017-05-16
Assignee
Inventors
Cpc classification
H01L2224/73204
ELECTRICITY
H01L2924/00012
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2224/73204
ELECTRICITY
H01L2224/16225
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2924/00012
ELECTRICITY
H01L2224/32225
ELECTRICITY
H01L2224/16225
ELECTRICITY
H01L2224/32225
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L2924/00
ELECTRICITY
International classification
Abstract
A solution for dissipating heat generated from high power chip packages, e.g., a fcBGA package, wbBGA package, 2.5D/3D TSV package, PoP, etc. The heat dissipation system may include a high power chip package including a high power chip. A micro-jet may be attached to the high power chip. A micro-pump may be in fluidic communication with the micro-jet. A heat exchanger may be in fluidic communication with the micro-pump. The high power chip package is assembled on the same PCB with the micro-pump and the heat exchanger.
Claims
1. A heat dissipation system for a high power chip package, comprising: a high power chip having a heat flux of over 350 W/cm.sup.2 or having hot spots of more than 10 kW/cm.sup.2; a built-in micro-jet disposed in the high power chip package and attached to the high power chip, the built-in micro-jet having a micro-jet chamber defined by a top wall, a bottom wall, and at least one sidewall, and a separator disposed in a middle of the micro-jet chamber dividing the micro-jet chamber into an upper chamber and a lower chamber, the bottom wall of the built-in micro-jet is attached to a surface of the high power chip by one selected from a group of a direct attachment of the bottom wall of the built-in micro-jet to the surface of the high power chip and a die attach material disposed between the high power chip and the bottom wall of the built-in micro-jet; a plurality of via holes disposed in the separator, wherein the plurality of via holes is arranged in an array; a mold compound encapsulating the high power chip and contacting at least a portion of the built-in micro-jet; a pump in fluidic communication with the built-in micro-jet; a heat exchanger in fluidic communication with the pump; and a coolant flowing through the built-in micro-jet, the pump, and the heat exchanger.
2. The heat dissipation system of claim 1, wherein the high power chip package is selected from a group consisting of a fcBGA package, a wbBGA package, a 2.5D/3D TSV package, and a PoP.
3. The heat dissipation system of claim 1, further comprising an inlet of the micro-jet chamber and an outlet of the micro jet chamber.
4. The heat dissipation system of claim 3, wherein the coolant flows from the pump through the inlet of the micro-jet chamber into the upper chamber of the micro-jet chamber.
5. The heat dissipation system of claim 3, wherein the coolant flows from the lower chamber of the micro-jet chamber through the outlet of the micro-jet chamber to the heat exchanger.
6. The heat dissipation system of claim 1, wherein the high power chip package, the pump, and the heat exchanger are disposed on a single PCB.
7. The heat dissipation system of claim 1, wherein the mold compound encapsulates the built-in micro-jet.
8. The heat dissipation system of claim 1, wherein at least a portion of a surface of the built-in micro-jet is exposed by the mold compound.
9. The heat dissipation system of claim 1, wherein the high power chip is disposed on an organic substrate of the high power chip package.
10. The heat dissipation system of claim 1, wherein the coolant absorbs heat generated by the high power chip through one selected from the group of the direct attachment bottom wall of the micro-jet chamber to the surface of the high power chip and the die attach material disposed between the high power chip and the bottom wall of the built-in micro-jet.
11. The heat dissipation system of claim 1, wherein the plurality of via holes disposed in the separator of the micro-jet chamber are configured to distribute the coolant evenly on the portion of the micro-jet chamber contacting the surface of the high power chip.
12. The heat dissipation system of claim 1, wherein the array of via holes is selected from a group of an 88 array, a 1010 array, and a 2020 array.
13. The heat dissipation system of claim 1, wherein the plurality of via holes are cylindrical, and wherein a diameter of each of the plurality of via holes is 50 micrometers.
14. The heat dissipation system of claim 1, wherein the separator is copper.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION
(13) Embodiments of the invention provide a solution for dissipating heat generated by the high power chip in a fcBGA package, a wbBGA package, a 2.5D/3D TSV package, a PoP, etc.
(14) Referring to
(15) Referring to
(16) Referring to
(17) During operation, in the heat dissipation structure, deionized water or liquid metal may be used as a micro jet coolant. Suitable liquid metals include gallium and its alloys, for their advantageous properties of low melting points, high thermal conductivity, non-flammable and non-toxic activities, low vapor pressure, high boiling point, etc. The coolant may be introduced into the micro-jet chamber 112 through the inlet 110 by the driving force of micro-pump 113. The micro-jet chamber 112 may include the separator 108, to help ensure temperature uniformity of the high power chip 105, avoid creation of a local hotspot, and increase the reliability of high power chip 105. The via holes 109 defined by the separator 108 may be cylindrical.
(18) The coolant may spray on the internal wall of micro-jet 106 through via holes array on the separator 108, and absorb the heat generated by high power chip 105. Subsequently, the coolant may flow to the heat exchanger 114 through the outlet 111, and transfer the heat to the ambient through the heat exchanger 114. Then, induced by the driving force of the micro-pump 113, the coolant may flow back to the micro-jet 106.
(19) Referring to
(20) Referring to
(21) During operation, in the heat dissipation structure, deionized water or liquid metal (e.g., gallium and its alloys) may be used as a micro-jet coolant. The coolant may be introduced into the micro-jet chamber 212 through the inlet 210 by the driving force of micro-pump 213. The micro-jet chamber 212 may contain the separator 208 to ensure the temperature uniformity of the high power chip 204, avoid the local hotspot, and increase the reliability of the high power chip 204.
(22) The coolant may spray on the internal wall of micro jet 206 through via holes array on the separator 208, and absorb the heat generated by high power chip 204. Subsequently, the coolant may flow to the heat exchanger 214 through the outlet 211, and transfer the heat to the ambient through heat exchanger 214. Then, induced by the driving force of the micro-pump 213, the coolant may flow back to the micro jet 206.
(23) Referring to
(24) Layer 306 may be an interposer or an active chip. In general, an interposer 306 is a stress buffer used to connect chips disposed on the interposer or to redistribute the bumps of the chips.
(25) In embodiments in which layer 306 is an interposer, the TSV package 300 may be a 2.5D TSV package. If layer 306 is an active chip, the TSV package 300 may be a 3D package. Many TSVs 307 may be disposed in the interposer or active chip 306.
(26) The interposer or active chip 306 may include a back redistribution layer (RDL) 305 and a front RDL 309.
(27) An insulator layer 308 may be formed on the front RDL layer 309.
(28) High power chips 312 and 326 may be soldered onto the interposer or active chip 306 with micro-bump 310. The high power chip 312 may be a logic chip, and the high power chip 326 may be a memory chip. An upper underfill layer 311 may be used to fill gaps between the high power chip 312 and the interposer or active chip 306. An upper underfill layer 311 may also be used to fill gaps between the high power chip 326 and the interposer or active chip 306. The interposer or active chip 306 may be soldered onto the organic substrate 302 with copper pillar bump 303. A lower underfill layer 304 may be used to fill gaps between the organic substrate 302 and the interposer or active chip 306.
(29) The micro-jet 313 may be attached to top surfaces of the high power chips 312 and 326 by TIMs with high thermal conductivity. An inlet 318 of the micro-jet 313 may be connected with a micro-pump 320 through pipe 323. An outlet 317 of the micro jet 313 may be connected with a heat exchanger 321 by pipe 324. The micro-pump 320 may be connected with the heat exchanger 321 by pipe 325. The micro-jet 313 may be covered by mold compound 314. Alternatively, the top surfaces of the micro-jet 313 may be exposed on the outside of the 2.5D/3D TSV package 300.
(30) Referring to
(31) During operation, deionized water or liquid metal (e.g., gallium and its alloys) may be used as a micro-jet coolant. The coolant may be introduced into the micro-jet chamber 319 through the inlet 318 by the driving force of micro-pump 320. To ensure the temperature uniformity of the high power chips 312 and 326, avoid creation of a local hotspot, and raise the reliability of high power chips 312 and 326, micro jet 313 may contain a separator 315. The separator 315 may define an array of via holes 316.
(32) The coolant may spray on the wall of micro jet 313 through the separator 315, and absorb the heat generated by the high power chips 312 and 326. Subsequently, the coolant may flow to the heat exchanger 321 through the outlet 317, and transfer the heat to the ambient through heat exchanger 321. Then, induced by the driving force of the micro-pump 320, the coolant may flow back to the micro-jet 313.
(33) Referring to
(34) An inlet 410 of the micro jet 403 may be connected with a micro-pump 418 by pipe 421. Two outlets 411 of the micro jet 403 may be connected with a heat exchanger 419 through pipe 423. The micro-pump 418 may be connected with the heat exchanger 419 by pipe 422. The high power chip 405 is attached to the micro jet 403 through die attach 404. The die attach 404 may be a high thermal conductivity material, such as a diamond film. The high power chip 405 may be wire-bonded to the organic substrate 401 with, e.g., metal, such as gold or copper wire 406. The chip may be encased by mold compound 407.
(35) The top package of the PoP may be connected to the bottom package with BGA support ball 413. A memory chip 416 may be wire-bonded to an organic substrate 414 with, e.g., metal, such as gold or copper wire 415. Mold compound 417 may encase the memory chip 416.
(36) Referring to
(37) During operation, deionized water or liquid metal (e.g., gallium and its alloys) may be used as a micro-jet coolant. The coolant may be introduced into the micro-jet chamber 412 through the inlet 410 by the driving force of micro-pump 418. To ensure the temperature uniformity of the high power chip 405, avoid creating a local hotspot, and raise the reliability of high power chip 405, micro-jet chamber 403 may contain the separator 408.
(38) The coolant sprays on the wall of micro-jet cavity 412 through via holes array on the separator 408, and absorbs heat generated by the high power chip 405. Subsequently, the coolant flows to the heat exchanger 419 through the outlet 411, and transfers the heat to the ambient through heat exchanger 419. Then, induced by the driving force of the micro-pump 418, the coolant flows back to the micro jet 403.
(39) Those skilled in the art will readily appreciate that all parameters listed herein are meant to be exemplary and actual parameters depend upon the specific application for which the methods and materials of the present invention are used. It is, therefore, to be understood that the foregoing embodiments are presented by way of example only and that, within the scope of the appended claims and equivalents thereto, the invention may be practiced otherwise than as specifically described.