CHIP PACKAGE AND MANUFACTURING METHOD THEREOF
20170012081 ยท 2017-01-12
Inventors
- Chia-Lun SHEN (Taoyuan City, TW)
- Yi-Ming CHANG (Taoyuan City, TW)
- Hsiao-Lan YEH (Tainan City, TW)
- Yen-Shih HO (Kaohsiung City, TW)
Cpc classification
H01L2224/17135
ELECTRICITY
H01L2224/06132
ELECTRICITY
H01L2224/0401
ELECTRICITY
H01L21/78
ELECTRICITY
H01L2224/1403
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2224/1703
ELECTRICITY
H01L2224/14179
ELECTRICITY
H01L2224/81191
ELECTRICITY
H01L2225/06568
ELECTRICITY
H01L2225/06513
ELECTRICITY
H01L2224/06131
ELECTRICITY
H01L2224/14132
ELECTRICITY
H01L2224/13023
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2225/06517
ELECTRICITY
H01L2224/11005
ELECTRICITY
H01L2224/94
ELECTRICITY
H01L2224/16225
ELECTRICITY
H01L2224/0603
ELECTRICITY
H01L2224/06135
ELECTRICITY
H01L2225/06524
ELECTRICITY
H01L24/94
ELECTRICITY
H01L2224/94
ELECTRICITY
International classification
H01L25/065
ELECTRICITY
Abstract
A manufacturing method of a chip package includes the following steps. A patterned solder paste layer is printed on a patterned conductive layer of a wafer. Plural solder balls are disposed on the solder paste layer that is on a first portion of the conductive layer. A reflow process is performed on the solder balls and the solder paste layer. A flux layer converted from a surface of the solder paste layer is cleaned.
Claims
1. A manufacturing method of a chip package, the manufacturing method comprising: (a) printing a patterned solder paste layer on a patterned conductive layer of a wafer; (b) disposing a plurality of solder balls on the solder paste layer that is on a first portion of the conductive layer; (c) performing a reflow process on the solder balls and the solder paste layer; and (d) cleaning a flux layer that is converted from a surface of the solder paste layer.
2. The manufacturing method of claim 1, wherein step (a) and step (b) are performed in a printer.
3. The manufacturing method of claim 2, wherein step (b) comprises: assembling a stencil having a plurality of openings in the printer, wherein the openings are aligned with the solder paste layer that is on the first portion of the conductive layer.
4. The manufacturing method of claim 3, wherein step (b) further comprises: placing the solder balls on the stencil to respectively roll into the openings of the stencil, such that the solder balls are located on the solder paste layer that is on the first portion of the conductive layer.
5. The manufacturing method of claim 3, wherein the openings of the stencil are formed by electroforming.
6. The manufacturing method of claim 1, wherein the solder balls and the solder paste layer that is on the first portion of the conductive layer form a plurality of conductive balls after step (c), and two centers of the two adjacent conductive balls are separated at a distance from 550 m to 600 m.
7. The manufacturing method of claim 6, wherein a height of each of the conductive balls is in a range from 300 m to 400 m.
8. The manufacturing method of claim 1, wherein no solder ball is located on a second portion of the conductive layer, and the solder paste layer on the second portion of the conductive layer forms a plurality of conductive balls after step (c), and two centers of the two adjacent conductive balls are separated at a distance from 200 m to 250 m.
9. The manufacturing method of claim 8, wherein a height of each of the conductive balls is in a range from 10 m to 100 m.
10. The manufacturing method of claim 1, wherein step (c) are performed in an infrared reflow furnace.
11. The manufacturing method of claim 1, further comprising: cutting the wafer to form the chip package.
12. A chip package, comprising: a first chip, wherein a surface of the first chip has a patterned conductive layer; a patterned solder paste layer located on the conductive layer; and a plurality of solder balls located on the solder paste layer that is on a first portion of the conductive layer, wherein no solder ball is located on the solder paste layer that is on a second portion of the conductive layer; after a reflow process, the solder balls and the solder paste layer that is on the first portion of the conductive layer form a plurality of first conductive balls, and the solder paste layer on the second portion of the conductive layer forms a plurality of second conductive balls.
13. The chip package of claim 12, wherein two centers of the two adjacent first conductive balls are separated at a distance from 550 m to 600 m.
14. The chip package of claim 12, wherein a height of each of the first conductive balls is in a range from 300 m to 400 m.
15. The chip package of claim 12, wherein two centers of the two adjacent second conductive balls are separated at a distance from 200 m to 250 m.
16. The chip package of claim 12, wherein a height of each of the second conductive balls is in a range from 10 m to 100 m.
17. The chip package of claim 12, wherein the first conductive balls surround the second conductive balls.
18. The chip package of claim 12, wherein the chip package is disposed on a printed circuit board, such that the surface of the first chip is subject to supporting forces of the first and second conductive balls so as to be a curved surface, wherein the first conductive balls are located on an edge region of the curved surface, and the second conductive balls are located on a central region of the curved surface.
19. The chip package of claim 12, further comprising: a second chip stacked on the first chip and corresponding to the second conductive balls in position.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0014] The invention can be more fully understood by reading the following detailed description of the embodiments, with reference made to the accompanying drawings as follows:
[0015]
[0016]
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[0018]
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[0020]
[0021]
[0022]
DETAILED DESCRIPTION
[0023] Reference will now be made in detail to the present embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
[0024]
[0025] In the following description, the aforesaid steps in the manufacturing method will be explained.
[0026]
[0027]
[0028]
[0029] As a result, the solder balls 130 and the solder paste layer 120 that is on the first portion of the conductive layer 112a may form first conductive balls 130a that have larger sizes, and the solder paste layer 120 on the second portion of the conductive layer 112b may form second conductive balls 130b that have smaller sizes.
[0030] After the first conductive balls 130a and the second conductive balls 130b are formed, the flux layer converted from the surface of the solder paste layer 120 may be cleaned. For example, water may be used to clean the flux layer. Thereafter, the wafer 110 may be cut along line L-L to form the chip package 100 of
[0031] In the manufacturing method of the chip package of the present invention, since the solder paste layer 120 is printed on the entire conductive layer 112 (see
[0032] In addition, the solder paste layer 120 is made of a material including tin and flux. After a reflow process, tin may be solidified and centralized, such that the solder balls 130 and the solder paste layer 120 that is on the first portion of the conductive layer 112a may form the first conductive balls 130a that have a large size, and the solder paste layer 120 on the second portion of the conductive layer 112b may form the second conductive balls 130b that have a small size. In other words, the first and second conductive balls 130a, 130b having different sizes are formed through the material property of the solder paste layer 120 and through selecting positions for disposing the solder balls 130 in the manufacturing method of the chip package of the present invention.
[0033] It is to be noted that the connection relationships and the materials of the elements described above will not be repeated in the following description. In the following description, the structure and application of the chip package will be described.
[0034]
[0035] In the chip package 100 formed through the manufacturing method of the present invention, the two centers of the two adjacent first conductive balls 130a may be separated at a distance D1 from 550 m to 600 m, and the two centers of the two adjacent second conductive balls 130b may be separated at a distance D2 from 200 m to 250 m. The two adjacent first conductive balls 130a and the two adjacent second conductive balls 130b of the chip package 100 do not easily form a short circuit caused by bridge, which is a convenient factor for the requirements of chip miniaturization.
[0036] Moreover, the height H1 of each of the first conductive balls 130a may be in a range from 300 m to 400 m, and the height H2 of each of the second conductive balls 130b is in a range from 10 m to 100 m. Therefore, a height difference is formed between the first and second conductive balls 130a, 130b. The height difference may be utilized to change the shape of the chip package 100, such as the chip package 100 shown in
[0037]
[0038]
[0039] Although the present invention has been described in considerable detail with reference to certain embodiments thereof, other embodiments are possible. Therefore, the spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.
[0040] It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention covers modifications and variations of this invention provided they fall within the scope of the following claims.