EXTERNAL SUBSTRATE SYSTEM ROTATION IN A SEMICONDUCTOR PROCESSING SYSTEM
20230162999 ยท 2023-05-25
Inventors
- Tuan Anh Nguyen (San Jose, CA, US)
- Amit Kumar Bansal (Milpitas, CA)
- Juan Carlos Rocha-Alvarez (San Carlos, CA)
Cpc classification
H01L21/68742
ELECTRICITY
H01L21/67184
ELECTRICITY
H01L22/12
ELECTRICITY
International classification
H01L21/67
ELECTRICITY
H01L21/02
ELECTRICITY
H01L21/687
ELECTRICITY
Abstract
A method and apparatus for processing a semiconductor is disclosed herein. In one embodiment, a processing system for semiconductor processing is disclosed. The processing chamber includes two transfer chambers, a processing chamber, and a rotation module. The processing chamber is coupled to the transfer chamber. The rotation module is positioned between the transfer chambers. The rotation module is configured to rotate the substrate. The transfer chambers are configured to transfer the substrate between the processing chamber and the transfer chamber. In another embodiment, a method for processing a substrate on the apparatus is disclosed herein.
Claims
1. A method for processing a substrate, the method comprising: positioning a substrate in a first orientation in a processing chamber; performing a first process on the substrate in the processing chamber when the substrate is in the first orientation; transferring the substrate in the first orientation from the processing chamber to a rotation module; rotating the substrate a first predefined amount in the rotation module; transferring the substrate from the rotation module to the processing chamber to position the substrate in a second orientation that is different than the first orientation, wherein a difference between the second orientation and the first orientation is related to the first predefined amount of rotation of the substrate in the rotation module; and performing a second process on the substrate in the processing chamber when the substrate is in the second orientation.
2. The method of claim 1, wherein the first process is a same process as the second process.
3. The method of claim 1, wherein measurements from a rotation sensor are used to control a rotation of a substrate support in the rotation module and cause the substrate to rotate the first predefined amount in the rotation module.
4. The method of claim 1, further comprising: transferring the substrate in the second orientation from the processing chamber to the rotation module; and performing uniformity measurements on the substrate in the rotation module after transferring the substrate in the second orientation from the processing chamber to the rotation module.
5. The method of claim 4, wherein the uniformity measurements are performed using an ellipsometer.
6. The method of claim 1, further comprising: transferring the substrate in the second orientation from the processing chamber to the rotation module; rotating the substrate a second predefined amount in the rotation module; transferring the substrate from the rotation module to the processing chamber to position the substrate in a third orientation that is different than the second orientation, wherein a difference between the third orientation and the second orientation is related to the second predefined amount of rotation of the substrate in the rotation module; and performing a third process on the substrate in the processing chamber when the substrate is in the third orientation.
7. The method of claim 6, wherein the third process is a same process as the first process and the second process.
8. The method of claim 6, wherein the third orientation is different than the first orientation.
9. The method of claim 1, wherein the first process and the second process are each a deposition process.
10. A method for processing a substrate, the method comprising: positioning a substrate in a first orientation in a first processing chamber; performing a first process on the substrate in the first processing chamber when the substrate is in the first orientation; transferring the substrate in the first orientation from the first processing chamber to a rotation module; rotating the substrate a first predefined amount in the rotation module; transferring the substrate from the rotation module to a second processing chamber to position the substrate in a second orientation that is different than the first orientation, wherein a difference between the second orientation and the first orientation is related to the first predefined amount of rotation of the substrate in the rotation module; and performing a second process on the substrate in the second processing chamber when the substrate is in the second orientation.
11. The method of claim 10, wherein the first process is a same process as the second process.
12. The method of claim 10, wherein measurements from a rotation sensor are used to control a rotation of a substrate support in the rotation module and cause the substrate to rotate the first predefined amount in the rotation module.
13. The method of claim 10, further comprising: transferring the substrate in the second orientation from the second processing chamber to the rotation module; and performing uniformity measurements on the substrate in the rotation module after transferring the substrate in the second orientation from the second processing chamber to the rotation module.
14. The method of claim 13, wherein the uniformity measurements are performed using an ellipsometer.
15. The method of claim 10, further comprising: transferring the substrate in the second orientation from the second processing chamber to the rotation module; rotating the substrate a second predefined amount in the rotation module; transferring the substrate from the rotation module to the first processing chamber, to the second processing chamber, or to a third processing chamber to position the substrate in a third orientation that is different than the second orientation, wherein a difference between the third orientation and the second orientation is related to the second predefined amount of rotation of the substrate in the rotation module; and performing a third process on the substrate when the substrate is in the third orientation in the corresponding first processing chamber, second processing chamber or third processing chamber.
16. The method of claim 15, wherein the third process is a same process as the first process and the second process.
17. The method of claim 15, wherein the third orientation is different than the first orientation.
18. The method of claim 10, wherein the first process and the second process are each a deposition process.
19. A method for processing a substrate, the method comprising: a) positioning a substrate in a first orientation in a processing chamber of one or more processing chambers; b) performing a first process on the substrate in the processing chamber during a first time period; c) transferring the substrate from the processing chamber to a rotation module after performing the first process; d) rotating the substrate a predefined amount in the rotation module; e) transferring the substrate from the rotation module to a processing chamber of one or more processing chambers during a next time period, wherein the substrate is in a different orientation in the processing chamber relative to one or previous orientations of the substrate in the one or more processing chambers; f) performing an additional process on the substrate in the processing chamber during the next time period; and g) transferring the substrate from the processing chamber to the rotation module after performing the additional process.
20. The method of claim 19, further comprising: h) performing a uniformity measurement on the substrate in the rotation module after performing the additional process; and i) repeating blocks d-h) until a satisfactory level of uniformity has been achieved.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.
[0011]
[0012]
[0013]
[0014]
[0015]
[0016]
[0017]
[0018] For clarity, identical reference numerals have been used, where applicable, to designate identical elements that are common between figures. Additionally, elements of one embodiment may be advantageously adapted for utilization in other embodiments described herein.
DETAILED DESCRIPTION
[0019]
[0020] The load lock chamber 110 couples the transfer chamber 104a to the factory interface 112. The load lock chamber 110 is selectively in fluid communication with transfer chamber 104a, such that a substrate may be transferred between the atmospheric environment of the factory interface 112 and the load lock chamber 110. Transfer chamber 104a includes a robot 114a. The robot 114a is configured to transfer the substrates into and out of chambers 106, 108. Transfer chamber 104b includes a robot 114b. The robot 114b is configured to transfer the substrates into and out of chambers 106, 108.
[0021] The processing chambers 108 are coupled to the transfer chambers 104a, 104b. In one embodiment, the processing chambers 108 may be a deposition chamber or a treatment chamber. Examples of suitable deposition chambers include, but are not limited to, a chemical vapor deposition (CVD) chamber, a spin-on coating chamber, a flowable CVD chamber, a physical vapor deposition (PVD) chamber, an atomic layer deposition (ALD) chamber, an epitaxial deposition chamber, and the like. Examples of treatment chambers include, but are not limited to, a thermal treatment chamber, an annealing chamber, a rapid thermal anneal chamber, a laser treatment chamber, an electron beam treatment chamber, a UV treatment chamber, an ion beam implantation chamber, an ion immersion implantation chamber, or the like. It is also contemplated that one or more of the processing chambers 108 may be another type of vacuum processing chamber.
[0022] The rotation module 106 is coupled to the transfer chambers 104a, 104b. The rotation module 106 separates transfer chamber 104a from transfer chamber 104b. The rotation module 106 allows for fluid communication between transfer chambers 104a, 104b, such that a substrate being transferred from 104a to 104b passes through the rotation module 106. The rotation module 106 is configured to rotate a substrate. The rotation module 106 is discussed in more detail in
[0023] Continuing to refer to
[0024] The processing system 100 is coupled to the controller 113 by a communication cable 120. The controller 113 is operable to control processing of a substrate within the processing system 100. The controller 113 includes a programmable central processing unit (CPU) 122 that is operable with a memory 124 and a mass storage device, an input control unit, and a display unit (not shown), such as power supplies, clocks, cache, input/output (I/O) circuits, and the like, coupled to the various components of the processing system 100 to facilitate control of the processes of processing a substrate. The controller 113 may also include hardware for monitoring the processing of a substrate through sensors (not shown) in the processing system 100.
[0025] To facilitate control of the processing system 100 and processing a substrate, the CPU 122 may be one of any form of general purpose computer processors for controlling the substrate process. The memory 124 is coupled to the CPU 122 and the memory 124 is non-transitory and may be one or more of readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk drive, hard disk, or any other form of digital storage, local or remote. Support circuits 126 are coupled to the CPU 122 for supporting the CPU 122 in a conventional manner. The process for processing a substrate is generally stored in the memory 124. The process for processing a substrate may also be stored and/or executed by a second CPU (not shown) that is remotely located from the hardware being controlled by the CPU 122.
[0026] The memory 124 is in the form of computer-readable storage media that contains instructions, that when executed by the CPU 122, facilitates the operation of processing a substrate in the processing system 100. The instructions in the memory 124 are in the form of a program product such as a program that implements the operation of processing a substrate. The program code may conform to any one of a number of different programming languages. In one example, the disclosure may be implemented as a program product stored in computer readable storage media for use with a computer system. The program(s) of the program product define functions of the embodiments. Illustrative computer-readable storage media include, but are not limited to: (i) non-writable storage media (e.g., read-only memory devices within a computer such as CD-ROM disks readable by a CD-ROM drive, flash memory, ROM chips or any tope of solid-state non-volatile semiconductor memory) on which information is permanently stored; and (ii) writing storage media (e.g. floppy disks within a diskette drive or hard-disk drive or any type of solid-state random-access semiconductor memory) on which alterable information is stored. Such computer-readable storage media, when carrying computer-readable instructions that direct the functions of the methods described herein, are embodiments of the present disclosure.
[0027]
[0028] The rotary actuator 218 may be a stepper motor, a servomotor, or the like. In one embodiment, the substrate support assembly 212 further includes a rotation sensor 223. The rotary actuator 218 is coupled to the shaft 216 of the substrate support assembly 212. The rotary actuator 218 may be configured to rotate the substrate support assembly 212. The rotation sensor 223 is coupled to the rotary actuator 218. The rotation sensor is configured to measure the rotation of the substrate support assembly 212. The rotation sensor 223 may be coupled to the controller (not shown) to provide real time feedback to the controller. In one embodiment, the rotation sensor 223 may be an encoder.
[0029] In one embodiment, the substrate support assembly 212 further includes a vertical actuator 220. The vertical actuator 220 is configured to move the shaft 216 vertically, in a z-direction, so that the platform 290 is raised and or lowered. In
[0030] A measurement device 228 is coupled to the ceiling 206 of the rotation module 106. In one embodiment, the measurement device 228 may be an ellipsometry device, configured to detect the dielectric properties of the film deposited on the substrate through a window 230 formed in the ceiling 206 of the chamber body 202. Dynamic metrology can provide a real-time feedback on the effectiveness of the rotation of the substrate on film property uniformity.
[0031] In the embodiment shown in
[0032]
[0033]
[0034] At block 404, the substrate is transferred from the first processing chamber 108 to a rotation module 106 by the robot 114a, as illustrated by
[0035]
[0036] Referring back to
[0037] Continuing to refer to
[0038] Processing of the substrate may proceed by repeating the method 400 described in
[0039]
[0040] The rotation module 606 is similar to the rotation module 106. Accordingly, like numerals have been used to designate like components described above with reference to
[0041]
[0042] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.