RESIDUAL GAS ANALYSER, AND EUV LITHOGRAPHY SYSTEM HAVING A RESIDUAL GAS ANALYSER

Abstract

A residual gas analyser (40) for analysis of a residual gas (30), in particular a residual gas in an EUV lithography system (1), includes an inlet system (41) for admission of the residual gas from a vacuum environment (27a) into the residual gas analyser, and a mass analyser (43) having a detector (44) for detecting ionized constituents (30a) of the residual gas. The residual gas analyser includes an ion transfer device (42) for transferring the ionized constituents of the residual gas to the mass analyser, the ion transfer device having an ion filtering device (45) configured for filtering at least one ionic constituent (30a) of the residual gas. Also disclosed is an EUV lithography system, in particular an EUV lithography apparatus, which includes at least one residual gas analyser configured as indicated above for analysing a residual gas in a vacuum environment of the EUV lithography system.

Claims

1. A residual gas analyser for analysis of a residual gas, comprising: an inlet system comprising an ion transfer device and configured to admit the residual gas from a vacuum environment into the residual gas analyser, and a mass analyser comprising a detector configured to detect ionized constituents of the residual gas, wherein: the ion transfer device is configured to transfer the ionized constituents of the residual gas to the mass analyser, and the ion transfer device comprises an ion filtering device configured to filter at least one ionic constituent of the ionic constituents of the residual gas.

2. The residual gas analyser as claimed in claim 1, in which the ion filter device is configured as a notch filter.

3. The residual gas analyser as claimed in claim 1, in which the ion filter device is configured as an RF-only quadrupole, an RF-only hexapole or an RF-only octopole.

4. The residual gas analyser as claimed in claim 1, in which the mass analyser is configured as a time-of-flight analyser.

5. The residual gas analyser as claimed in claim 1, in which the detector is selected from the group consisting essentially of secondary electron multipliers and microchannel plates.

6. The residual gas analyser as claimed in claim 1, in which the mass analyser further comprises an ion supply device at an outlet end of the inlet system, wherein the ion supply device is configured to supply further ionized constituents of the residual gas that have not been filtered by the ion filter device to the detector.

7. The residual gas analyser as claimed in claim 1, further comprising: at least one ionizing device configured to ionize neutral constituents of the residual gas.

8. The residual gas analyser as claimed in claim 7, in which the ionizing device is disposed at an inlet end of the inlet system.

9. The residual gas analyser as claimed in claim 7, in which the ionizing device comprises ion optics for transferring the ionized constituents of the residual gas formed in the vacuum environment.

10. The residual gas analyser as claimed in claim 7, in which the ionizing device is selected from the group consisting essentially of an electron ionization device and a high-frequency plasma ionization device.

11. An extreme ultraviolet (EUV) lithography system, arranged in a vacuum environment and comprising: at least one residual gas analyser as claimed in claim 1 and arranged for analysis of a residual gas in the vacuum environment of the EUV lithography system.

12. The EUV lithography system as claimed in claim 11, further comprising: at least one optical element configured and arranged to reflect EUV radiation, wherein an inlet end of the inlet system of the residual gas analyser is disposed at a distance of less than 5 cm from a reflective surface of the optical element.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Working examples are shown in the schematic drawing and are elucidated in the description that follows. The figures show:

[0033] FIG. 1 a schematic diagram of an EUV lithography apparatus with an inlet system of a residual gas analyser for analysis of the residual gas, and

[0034] FIGS. 2A, 2B schematic diagrams of exemplary residual gas analysers in accordance with FIG. 1, in particular residual gas analysers with ion transfer devices equipped with ionizing devices disposed either at an inlet end (FIG. 2A) or at an outlet end (FIG. 2B) of the ion transfer devices.

DETAILED DESCRIPTION

[0035] In the description of the drawings that follows, identical reference signs are used for components that are the same or analogous, or have the same or the analogous function.

[0036] FIG. 1 shows a schematic of the construction of an optical arrangement for EUV lithography in the form of an EUV lithography apparatus 1, specifically of a so-called wafer scanner. The EUV lithography apparatus 1 comprises an EUV light source 2 for generating EUV radiation, which has a high energy density in the EUV wavelength range below 50 nanometers, in particular between about 5 nanometers and about 15 nanometers. The EUV light source 2 can be configured for example in the form of a plasma light source for generating a laser-induced plasma. The EUV lithography apparatus 1 shown in FIG. 1 is designed for an operating wavelength of the EUV radiation of 13.5 nm. However, it is also possible for the EUV lithography apparatus 1 to be configured for a different operating wavelength in the EUV wavelength range, such as 6.8 nm, for example.

[0037] The EUV lithography apparatus 1 furthermore comprises a collector mirror 3 in order to focus the EUV radiation of the EUV light source 2 to form an illumination beam 4 and thereby to increase the energy density further. The illumination beam 4 provides the illumination of a structured object M with an illumination system 10, which in the present example has five reflective optical elements 12 to 16 (mirrors).

[0038] The structured object M can be for example a reflective photomask, which has reflective and non-reflective, or at least less reflective, regions for producing at least one structure on the object M. Alternatively, the structured object M can be a plurality of micro-mirrors, which are arranged in a one-dimensional or multi-dimensional arrangement and which are selectively movable about at least one axis, in order to set the angle of incidence of the EUV radiation on the respective mirror.

[0039] The structured object M reflects part of the illumination beam 4 and shapes a projection beam path 5, which carries the information about the structure of the structured object M and is radiated into a projection lens 20, which generates an image of the structured object M or of a respective partial region thereof on a substrate W. The substrate W, for example a wafer, comprises a semiconductor material, for example silicon, and is disposed on a mounting, which is also referred to as a wafer stage WS.

[0040] In the present example, the projection lens 20 has six reflective optical elements 21 to 26 (mirrors) in order to generate an image of the structure that is present at the structured object M on the wafer W. The number of mirrors in a projection lens 20 typically lies between four and eight; however, only two mirrors can also be used, if appropriate.

[0041] In addition to the reflective optical elements 3, 12 to 16, 21 to 26, the EUV lithography apparatus 1 also comprises non-optical components, which can be for example carrying structures for the reflective optical elements 3, 12 to 16, 21 to 26, sensors, actuators, etc.

[0042] The reflective optical elements 12 to 16 of the illumination system 10 and the reflective optical elements 21 to 26 of the projection lens 20 are arranged in a vacuum environment. In this case, a respective optical element 3, 12 to 16, 21 to 26 is typically arranged in a dedicated vacuum chamber, also referred to as “mini-environment”. By way of example, FIG. 1 shows such a vacuum chamber 27, in which the fourth reflective optical element 24 of the projection system 20 is disposed. The projection beam path 5 enters at a first opening from a further vacuum chamber (not shown) into the vacuum chamber 27 having the fourth optical element 24, and exits at a second opening in the direction of a further vacuum chamber in which the fifth optical element 25 of the projection system 20 is disposed. It will be apparent that it is also possible for two or more of the optical elements 12 to 16 and 21 to 26 to be disposed in a respective (common) vacuum chamber. The entire EUV lithography apparatus 1 shown in FIG. 1 is additionally surrounded by a housing (not shown), which is likewise a vacuum chamber.

[0043] The optical element 24 disposed in the vacuum chamber 27 has a substrate 28 composed of titanium-doped quartz glass, to which has been applied a reflective multilayer coating 29 optimized for the reflection of EUV radiation 5 at the operating wavelength λ.sub.B of 13.5 nm. The multilayer coating 29 for this purpose has alternating layers of molybdenum and silicon. At the operating wavelength λ.sub.B of 13.5 nm, the silicon layers have a higher real part of the refractive index than the molybdenum layers. Depending on the exact value of the operating wavelength λ.sub.B, other material combinations, for example molybdenum and beryllium, ruthenium and beryllium, or lanthanum and B.sub.4C, are likewise possible. In order to protect the multilayer coating 29, a protective layer of ruthenium is applied to it. The surface 29a of the reflective multilayer coating 29, more specifically the protective layer, is exposed to a vacuum environment 27a formed in an interior of the vacuum chamber 27.

[0044] Exposed regions of the surface 29a of the optical element 24 are exposed here to a residual gas 30 within the vacuum chamber 27. Constituents of the residual gas 30 are typically molecular hydrogen (H.sub.2), molecular oxygen (O.sub.2), nitrogen (N.sub.2), water (H.sub.2O), noble gases, e.g. Ar, He, etc. The molecular hydrogen H.sub.2 serves as purge gas and is supplied to the vacuum chamber 27 or vacuum environment 27a in a controlled manner via a gas feed (not shown). The molecular hydrogen H.sub.2 in the vacuum environment 27 has a comparatively high partial pressure in the order of magnitude of 10.sup.-2 mbar.

[0045] The interaction with the EUV radiation 4, 5 in the EUV lithography apparatus 1, specifically the interaction with the hydrogen H.sub.2, generates a plasma in the vacuum chamber 27, with formation of ionic plasma species (H.sup.+) or free-radical plasma species (H) inter alia. The hydrogen plasma serves to remove contamination in the form of hydrocarbons from the surface 29a of the reflective optical element 24. However, the hydrogen plasma also leads to unwanted reduction reactions on non-optical components disposed in the vacuum environment 27a, which can form volatile hydrides with the hydrogen plasma. This is the case, for example, for components that contain silicon, in which case the reaction with the hydrogen plasma forms gaseous silane (SiH.sub.4) inter alia. Silane (SiH.sub.4) is a critical contaminant for the surface 29a of the reflective optical element 24, since this contamination, in the case of reaction with the material of the surface 29a, e.g. Ru, forms a chemical compound that can be removed from the surface 29a only with great difficulty, if at all, which reduces the lifetime of the optical element 24.

[0046] The monitoring of the composition of the residual gas 30, or knowledge of the composition of the residual gas 30 in general, in particular the proportion of critical contaminants (e.g. SiH.sub.4), is thus of crucial importance for the operation of the EUV lithography apparatus 1. For characterization of the composition of the residual gas 30, in particular of the ionic or free-radical plasma species present therein, or of the critical contaminants, a residual gas analyser 40 is used, which is described in detail hereinafter with reference to FIGS. 2A and 2B.

[0047] The residual gas analyser 40 has an inlet system 41 having an inlet end 41a that has an opening to the inlet of the residual gas 30 present in the vacuum chamber 27. In order to very accurately characterize the composition of the residual gas 30 at the site of the reflective optical element 24, in particular at the surface 29a, the inlet end 41a or inlet opening is disposed at a distance A of less than 5 cm, in particular of less than 3 cm, away from the surface 29a, as shown schematically in FIG. 1.

[0048] The residual gas analyser 40 has a mass analyser 43 comprising a detector 44 for detection of ionized constituents 30a of the residual gas. The residual gas analyser 40 also has an ion transfer device 42 for transferring the ionized constituents 30a of the residual gas 30 to the mass analyser 43. The constituents of the residual gas 30 can be ionized directly in the vacuum environment 27a of the vacuum chamber 27 of the EUV lithography apparatus 1 via the action of the EUV radiation 4, 5. For ionization of neutral constituents 30b of the residual gas 30, the residual gas analyser 40 has an ionizing device 46, which, in the example shown in FIG. 2A, is disposed at the inlet end 41a of the inlet system 41. The ionizing device 46 is ideally transparent to the ionic constituents 30a of the residual gas 30 already formed in the vacuum environment 27a, meaning that it has no effect on the already ionized constituents 30a of the residual gas 30. This can be achieved in that the ionizing device 46 has ion optics for transfer of the ionic constituents 30a of the residual gas 30 formed in the vacuum environment 27a.

[0049] For admission of the ionized constituents 30a of the residual gas 30 into the residual gas analyser 40, the inlet system 41 has the ion transfer device 42, comprising a vacuum tube and ion optics disposed in the vacuum tube or multiple (cascaded) ion optics arranged in series in the vacuum tube. With the aid of the inlet system 41 having the ion transfer device 42, continuous supply of ionized constituents 30a of the residual gas 30 to the residual gas analyser 40 is possible, but the inlet system 41 may optionally also serve for pulsed supply of the ionized constituents 30a of the residual gas 30 to the residual gas analyser 40, and for that purpose have one or more controllable valves. The inlet system 41 encasing the ion transfer device 42, more specifically the vacuum tube, may have a comparatively long length of, for example, more than 30 cm.

[0050] The concentration or partial pressure of, for example, silane and other constituents of the residual gas 30 is generally much lower than that of molecular hydrogen (about 10.sup.-2 mbar) and may, for example, be in the order of magnitude of about 10.sup.-14 mbar. In order, in spite of this large dynamic range, to be able to detect even ultrasmall amounts of ionized constituents 30a of the residual gas 30, the ion transfer device 42 may be operated as a filter device, for which purpose it has an ion filter device 45 in the form of a quadrupole. For the filtering, the ion filter device 45 in the form of the quadrupole is operated in the RF-only mode of operation, in which only an AC voltage rather than a DC voltage is applied, extended by additional application of a further RF frequency that resonantly filters individual m/z ranges or a single m/z value.

[0051] The ion filter device in the form of the RF-only quadrupole 45 is utilized to specifically filter individual ionized constituents 30a of the residual gas 30, such that they do not enter the mass analyser 43. The filtered ionized constituent(s) 30a may have exactly one mass-to-charge ratio. The ion filter device 45 in this case serves as a notch filter, i.e. as a particularly narrowband type of band stop filter which filters only a narrow mass-to-charge range corresponding to a single ionized constituent 30a to be filtered in the residual gas 30, for example molecular hydrogen H.sub.2 or molecular nitrogen N.sub.2. For the filtering of a particular ionized constituent 30a of the residual gas 30, the alternating field applied to the RF-only quadrupole 45 may be suitably chosen or adjusted as described, for example, in US 5,672,870 cited at the outset. By suitable adjustment or variation of the alternating field, it is possible to determine which ionic constituent 30a of the residual gas 30 is filtered by the ion transfer device 42.

[0052] The ion transfer device 42, implemented by the ion filter device 45 with the filter function of a notch filter, may also be designed in another way, for example as an RF-only hexapole, as an RF-only 14ctupole, etc. What is important is that the ion transfer device 42 enables filtering of ionized constituents 30a of the residual gas 30 that have a high partial pressure, for example ionized hydrogen H.sup.+, etc., in order in this way to be able to determine the concentration of the remaining unfiltered ionized constituents 30a of the residual gas 30 with high accuracy.

[0053] In the examples shown in FIGS. 2A and 2B, the mass analyser 43 takes the form of a time-of-flight (TOF) analyser. A TOF analyser 43 has the advantage of high compactness or small design size, and a mass resolution up to m/Δm > 8000 with small measurement times. The TOF analyser 43 serves for time-of-flight measurement of the ionized constituents 30a of the residual gas 30, which are supplied to and detected by a detector 44 via an ion supply device 50 of the mass analyser 43 disposed at an outlet end 41b of the inlet system 41. The time of flight of the Ionized constituents 30a depends on their mass-to-charge ratio, which enables mass spectrometry analysis of the ionized constituents 30a of the residual gas 30. The ion supply device 50 of the mass analyser 43 in the form of the TOF analyser takes the form of a quadrupole in the example shown. The ion supply device 50 in the form of the quadrupole may optionally be operated as an additional ion filter device when it is operated in the RF-only mode of operation (see above).

[0054] The detector 44 in the examples shown in FIGS. 2A and 2B takes the form of cascaded microchannel plates. The detector 44 may alternatively take other forms, for example of a secondary electron multiplier. In the latter case, the detector 44 may have a separate conversion dynode, which may be advantageous particularly when a secondary electron multiplier is used in the form of a continuous dynode.

[0055] The electron ionization device 46 shown in FIGS. 2A and 2B, for ionization of the residual gas 30, has an electron source having a filament (glow wire), in order to generate an electron beam by virtue of the thermionic effect, which hits and ionizes the constituents of the residual gas 30 to be ionized. The electron ionization device 46 has an optimized source geometry which enables generation of a high pressure in the vessel of the electron ionization device 46 in which the ionization is effected. In order to increase the lifetime, it has been found to be favorable when the filament(s) that serve to generate the electron beam are disposed outside the source volume, since they can be pumped better in that position.

[0056] The residual gas analyser 40 shown in FIG. 2B differs from the residual gas analyser 40 shown in FIG. 2A in that ionization device 46 in the form of an electron ionization device 46 is disposed not at the inlet end 41a of the inlet system 41 but rather at the outlet end 41b of the inlet system 41 upstream of the ion transfer device 50 of the mass analyser 43. Nevertheless, the residual gas analyser 40 shown in FIG. 2B also has an inlet system 41 with an ion transfer device 42. It is possible via the ion transfer device 42 to supply the constituents 30a of the residual gas 30 that have been ionized by the EUV radiation 4, 5 to the residual gas analyser 40 or to the electron ionization device 46. Via the inlet system 41, neutral constituents 30b of the residual gas also reach and can be ionized by the electron ionization device 46.

[0057] In the example shown in FIG. 2B, the residual gas analyser 40 has an additional (optional) ionization device 47 disposed at the inlet end 41a of the inlet system 41. The additional ionization device 47 takes the form of a high-frequency plasma ionization device and serves to generate ionized constituents 30a of the residual gas 30 by the generation of a plasma. The use of different ionization devices 46, 47 may be advantageous in order to ionize different constituents of the residual gas 30: the plasma ionization device 47 typically enables “gentle” ionization in which there is only a small risk of fragmentation of the constituents of the residual gas 30 to be ionized. The plasma ionization device 47 may in particular serve to generate hydrogen-containing ions from the gas constituents of the residual gas 30, for example H.sup.+, H.sup.3+, N.sub.2H.sup.+, etc.

[0058] It will be apparent that - by contrast with what is shown in FIG. 2B - the residual gas analyser 40 may have only a single plasma ionization device 47, which may be disposed at the inlet end 41a of the inlet system 41 or at the outlet end 41b of the inlet system 41.

[0059] In the examples shown in FIGS. 2A and 2B, ion optics that are not shown in each case are disposed between the inlet system 41 and the ion supply device 50 or the electron ionization device 46, and between the ion supply device 50 and the detector 44. The electron ionization device 46, the ion supply device 50 and the detector 44 are accommodated in separate housing portions 49a-c of the residual gas analyser 40, and are pumped differentially with the aid of a vacuum pump device 48. In the example shown, the vacuum pump device 48 used is a turbomolecular pump, which takes the form of a so-called split flow pump and is configured to generate three different pressures in the three housing portions 49a-c.

[0060] With the aid of the residual gas analyser 40 described above, the demands on the analysis or the monitoring of a residual gas 30 in the EUV lithography apparatus 1 can be satisfied with regard to the construction space available and measurement time available, and in particular with regard to the large dynamic range required for analysing the residual gas.