Polymer-coated high-index waveguide for acoustic sensing
11619543 · 2023-04-04
Assignee
Inventors
- Amir Rozental (Haifa, IL)
- Resmi Ravi Kumar (Haifa, IL)
- Shai Tsesses (Nesher, IL)
- Assaf Grinberg (Binyamina, IL)
Cpc classification
A61B5/0095
HUMAN NECESSITIES
G02F1/11
PHYSICS
A61B5/0084
HUMAN NECESSITIES
International classification
G01H9/00
PHYSICS
A61B5/00
HUMAN NECESSITIES
G02F1/01
PHYSICS
Abstract
Apparatus is provided including an acoustic sensor (50) having an optical waveguide (20). The optical waveguide (20) includes a waveguide core (202) having a waveguide core refractive index and a waveguide core photo-elastic coefficient, and an over-cladding layer (204) coupled to the waveguide core (202) and including an optically transparent polymer having an over-cladding refractive index and an over-cladding photo-elastic coefficient. The waveguide core refractive index is greater than the over-cladding refractive index, and the over-cladding photo-elastic coefficient is greater than the waveguide core photo-elastic coefficient. Other applications are also described.
Claims
1. Apparatus comprising: an acoustic sensor comprising an optical waveguide, the optical waveguide comprising: a waveguide core having a waveguide core refractive index and a waveguide core photo-elastic coefficient; an over-cladding layer coupled to the waveguide core and comprising an optically transparent polymer having an over-cladding refractive index and an over-cladding photo-elastic coefficient; wherein the waveguide core refractive index is greater than the over-cladding refractive index, and a magnitude of the over-cladding photo-elastic coefficient is greater than a magnitude of the waveguide core photo-elastic coefficient.
2. The apparatus according to claim 1, wherein the over-cladding layer comprises a bisbenzocyclobutene (BCB) over-cladding layer.
3. The apparatus according to claim 1, wherein the waveguide core refractive index is at least 1.7.
4. The apparatus according to claim 1, wherein a maximum magnitude of the photo-elastic coefficient of the waveguide core is 20 TPa.sup.−1.
5. The apparatus according to claim 1, wherein the over-cladding refractive index is lower than 1.7.
6. The apparatus according to claim 1, wherein the over-cladding photo-elastic coefficient is at least four times greater than the waveguide core photo-elastic coefficient.
7. The apparatus according to claim 1, wherein the optically transparent polymer of the over-cladding has a Young Modulus of under 10 (E) GPa.
8. The apparatus according to claim 1, wherein the waveguide core comprises silicon.
9. The apparatus according to claim 1, further comprising a light source arranged such that an optical signal generated by the light source and directed at the optical waveguide is modulated due to an acoustic wave impinging upon the optical waveguide.
10. The apparatus according to claim 9, wherein the light source comprises a laser configured to generate a laser beam.
11. The apparatus according to claim 9, wherein the signal generated by the light source is modulate in phase.
12. The apparatus according to claim 9, wherein the signal generated by the light source is modulate in amplitude.
13. The apparatus according to claim 1, wherein the optical waveguide comprises one or more optical resonators.
14. The apparatus according to claim 13, wherein the optical waveguide is the resonator.
15. The apparatus according to claim 13, wherein the one or more optical resonators are selected from the group consisting of: π phase-shifted Bragg grating (π-BG), Fabry-Perot cavity, and optical-ring resonator.
16. A system comprising: an optical waveguide comprising: a waveguide core having a waveguide core refractive index and a waveguide core photo-elastic coefficient; an over-cladding layer coupled to the waveguide core and comprising an optically transparent polymer having an over-cladding refractive index lower than the waveguide core refractive index, and a magnitude of the over-cladding photo-elastic coefficient greater than a magnitude of the waveguide core photo-elastic coefficient; an interferometer configured to generate, from a laser source, a laser beam directed at the optical waveguide such that the laser beam propagates through the optical waveguide, thereby modulating the laser beam by an acoustic wave impinging upon the optical waveguide.
17. The system according to claim 16, wherein the interferometer is further configured to measure the modulation when the optical waveguide is being impinged by the acoustic wave, to calculate shifts in a spectral response of the optical waveguide based on the measuring, the shifts being indicative of a waveform of the acoustic wave.
18. The system according to claim 16, wherein the optical waveguide comprises one or more optical resonators.
19. Apparatus comprising: an acoustic sensor comprising an optical waveguide, the optical waveguide comprising: a waveguide core having a waveguide core refractive index and a waveguide core photo-elastic coefficient; an over-cladding layer coupled to the waveguide core and comprising an optically transparent polymer having an over-cladding refractive index and an over-cladding photo-elastic coefficient; wherein the waveguide core refractive index is greater than the over-cladding refractive index, and the over-cladding young modulus is at least one order of magnitude smaller than the waveguide core young modulus.
20. The Apparatus of claim 19, wherein the optically transparent polymer of the over-cladding has a Young Modulus of under 10 (E) GPa.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) Exemplary embodiments are illustrated in referenced figures. Dimensions of components and features shown in the figures are generally chosen for convenience and clarity of presentation and are not necessarily shown to scale. The figures are listed below.
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
DETAILED DESCRIPTION OF APPLICATIONS
(10) Some aspects of the present invention provide an acoustic sensor configured for detection of acoustic waves by detecting the stress and strain it induces in an optical sensing element. The optical detection is typically based on a photo-elastic effect, where stress or strain in optical components of the acoustic sensor lead to changes in a refractive index of the optical components. These changes are indicative of the acoustic waves impinging upon the acoustic sensor, thereby allowing optical-based detection of the acoustic waves.
(11) In some aspects of the present invention, the acoustic sensor comprises an ultrasound detector, e.g., an interferometric ultrasound detector. For some aspects, the ultrasound detector is configured for detection of ultrasound waves in a frequency of above 100 KHZ. The ultrasound detector is typically shaped, sized and oriented for ultrasound detection with medical applications. For example, intravascular photoacoustic imaging where both miniaturization and high sensitivity are desired, and/or in magnetoacoustics, where immunity to electromagnetic interference (EMI) is needed.
(12) Some aspects of the present invention are directed to high-resolution ultrasound imaging, e.g. as part of a scanning device or an array of such detectors. This can be used to increase the resolution of medical imaging and non-destructive ultrasound testing. In particular, imaging catheters and endoscope can use the acoustic sensor provided herein in accordance with some aspects of the present invention, to increase the number of detectors employed and a frequency thereof, thus enabling imaging at a higher resolution. Some aspects of the present invention are especially suitable for hybrid ultrasound imaging techniques (e.g., optoacoustic and magnetoacoustic imaging), where it could increase resolution and consequently increase widespread use.
(13) In some aspects of the present invention, the acoustic sensor comprises an optical waveguide comprising a waveguide core and a waveguide cladding coupled to, and embedding, the waveguide core.
(14) In some aspects, the waveguide core has a waveguide core refractive index and a waveguide core photo-elastic coefficient. Typically, the waveguide core refractive index is a high refractive index of at least 1.7, and the waveguide core photo-elastic coefficient is a low photo-elastic coefficient of maximum 20 TPa.sup.−1. For some applications, the waveguide core comprises a silicon waveguide core characterized by a high refractive index of 3.48. The high refractive index of silicon generally allows for miniaturization of the waveguide and consequently of the acoustic sensor. In contrast to the high refractive index of the silicon waveguide core, the silicon waveguide core is further characterized by low photo-elastic coefficients of −17.13 TPa.sup.−1 and 5.51 TPa.sup.−1. The low photo-elastic coefficients may impair conversion of the acoustic signal impinging upon the acoustic sensor into an optical signal, thereby limiting sensitivity of the acoustic sensor.
(15) In accordance with some aspects of the present invention, the above-mentioned drawbacks of the waveguide core are overcome by embedding the waveguide core in an over-cladding comprising a transparent polymer. Typically, the transparent polymer of the over-cladding is characterized by a relatively low refractive index of a maximum of 1.7, and a high photo-elastic coefficient of at least 30 TPa.sup.−1. Typically, the high photo-elastic coefficient of the over-cladding allows for a high degree of deformation of the over-cladding by the acoustic wave impinging on the acoustic sensor, thereby increasing sensitivity of the acoustic sensor and compensating for the low sensitivity of the waveguide core. In some aspects, the over-cladding comprises a Benzocyclobutene (BCB), which is characterized by a refractive index of 1.54 and photo-elastic coefficients of 99 TPa-1 and 31 TPa-.sup.1. In accordance with some aspects of the present invention, the inventors show herein that a Benzocyclobutene (BCB) over-cladding improve the capabilities of silicon-photonics waveguide for ultrasound detection in terms of sensitivity and susceptibility to acoustic reverberations and SAWs.
(16) For some aspects of the present invention, a light source, e.g., a laser, is directed at the optical waveguide and a reference optical signal from the laser interferes with the signal emanating from the waveguide. As an acoustic wave (e.g., an ultrasound wave) is incident upon the optical waveguide, it modifies a geometry and optical properties of the waveguide, such that the signal at its output acquires a modulation in its phase, resulting in a different intensity of the interference with the reference optical signal. This modulation is indicative of the acoustic wave impinging upon the waveguide such that the acoustic waveform can be detected.
(17) In accordance with some aspects of the present invention the apparatus further comprises an interferometer for use with the optical waveguide. The interferometer is configured to generate, from the laser source, a laser beam directed at the optical waveguide such that the laser beam propagates through the optical waveguide, thereby modulating the laser beam by the acoustic wave impinging upon the optical waveguide. This modulation is indicative of the acoustic wave impinging upon the waveguide such that the acoustic waveform can be detected.
(18) In accordance with some aspects of the present invention, the optical waveguide further comprises and/or is coupled to (e.g., CROW), one or more optical resonators configured to exhibit and optical resonance at one or more wavelength. For light propagating in the waveguide at the resonance wavelength, localization is obtained to the parts of the waveguide in which the resonator was fabricated or coupled to. Accordingly, the use of the resonators typically facilitates miniaturization of the acoustic sensor and enhances sensitivity. For some applications, the one or more optical resonators are selected from the group consisting of: π phase-shifted Bragg grating (π-BG), Fabry-Perot cavity, and optical-ring resonator.
(19) In accordance with some aspects of the present invention, a method for detection of acoustic waves is provided comprising directing a laser beam at the optical waveguide when the optical waveguide is impinged by an acoustic wave, to cause the laser beam to propagate through the optical waveguide such that the laser beam is modulated. Accordance to some aspects of the present invention, the waveguide comprises a high refractive index waveguide core (e.g., a silicon core) embedded in a transparent polymer over-cladding. Shifts in a spectral response of the optical waveguide based on measuring the modulation are calculated. These shifts are typically indicative of a waveform of the acoustic wave, thereby enabling detecting the acoustic waves.
(20) Reference is now made to
(21) For some applications, waveguide 20 comprises a waveguide core 202 comprising silicon and an over-cladding 204 comprising Benzocyclobutene (BCB). It is noted that the silicon waveguide core and/or the BCB over-cladding are shown by way of illustration and not limitation. Waveguide core 202 may comprise any other optical material characterized by a relatively high refractive index and a relatively low photo-elastic coefficient. Similarly, over-cladding 204 may comprise any other suitable transparent polymer. Optionally but not necessarily, waveguide 20 additionally comprises a silica under-cladding 206 which is typically a substrate on which the waveguide core is fabricated. Optionally but not necessarily, waveguide 20 comprises an additional silicon substrate 208.
(22) Waveguide core 202 of waveguide 20 is typically characterized by a high refractive index and a low photo-elastic coefficient, and over-cladding 204 is typically characterized by a low refractive index, a high photo-elastic coefficient, and a Young Modulus of under 10 (E) GPa, e.g., under 5 GPa.
(23) In particular, the refractive index of waveguide core 202 is greater than the refractive index of over-cladding 204, and the photo-elastic coefficient of over-cladding 204 is greater (e.g., 4 times greater) than the photo-elastic coefficient of waveguide core 202. The following Table 1 shows optical, mechanical, acoustical, and photo-elastic properties of Silicon (Si), Silica (SiO2), and Benzocyclobutene (BCB):
(24) TABLE-US-00001 Property Si SiO.sub.2 BCB Refractive index (n) 3.48 1.44 1.54 Young Modulus (E) GPa 130 76.7 2.9 Poisson Ratio (v) 0.27 0.19 0.34 Density (ρ) Kg/m.sup.3 2328 2200 1050 Acoustic impedance (W) Kgm.sup.−2s.sup.−1 19.5 × 10.sup.6 13.6 × 10.sup.6 2.17 × 10.sup.6 Photo-elastic constant (C1) TPa.sup.−1 −17.13 1.17 99 Photo-elastic constant (C2) TPa.sup.−1 5.51 3.73 31
(25) For the purpose of experiments conducted in accordance with some applications of the present invention, waveguide 20 was fabricated having a silicon core and a BCB over-cladding. In some cases, waveguide 20 was compared to other waveguides also having a silicon core but lacking the BCB over-cladding. The term “silicon waveguide” used herein generally refers to a waveguide comprising a silicon core.
(26) Fabrication of the Silicon Waveguides (e.g., as Illustrated in
(27) Fabrication of the silicon waveguides was performed at the foundry of IMEC (Leuven, Belgium) using the SOI multi-project wafer services of ePIXfab. The fabrication was performed on 200 mm SOI wafers with deep ultraviolet at the wavelength of 193 nm and inductively coupled plasma reactive ion etching. Two types of wafers were provided, in which the same silicon structures were produced. In both wafers, the silicon substrate had a thickness of 700 μm. In the first wafer, the silicon core was buried in a silica cladding In accordance with some application of the present invention, in the second wafer, used to produce the structure shown in
(28) In both wafers, 2 mm long silicon waveguides were produced with fiber-to-chip grating couplers on both ends. Polarization maintaining (PM) fibers were coupled to the waveguides where the orientation of the fiber with respect to the grating coupler determined whether the TE or TM mode would be launched. In total, 4 fiber-coupled chips were produced for the discussed options of polarization (TE or TM) and over-cladding material (silica, or, as in accordance with applications of the present invention, a BCB over-cladding).
(29) It is to be appreciated that with regard to fabrication of the silicon waveguides described hereinabove, numerical values are provided by way of illustration and not limitation. Typically, but not necessarily, each value shown is an example selected from a range of values that is within 20% of the value shown. Similarly, although certain steps are described with a high level of specificity, a person of ordinary skill in the art will appreciate that other steps may be performed, mutatis mutandis.
(30) Reference is still made to
(31) As noted above, in accordance with some applications of the present invention, experiments were conducted using waveguide guide 20 as modeled in
(32)
(33) whereas the reflection is given by
(34)
To calculate the strain in the device layer, which is the sum of the waves propagating in the y and −y directions, one needs to account for the multiple reflections between the different interfaces, e.g., for all the multiple reflections between the different interfaces. The analysis, provided in in equations A1-A4 below, shows that in the waveguide with the absence of the BCB over-cladding, the normal stress in the SiO2 over-cladding layer is equal to 1.86σ.sub.in, where σ.sub.in is the y component of the stress of the incident wave. In accordance with some application of the present invention, for waveguide 20 (
Expressions for σ.sub.y in the SiO.sub.2 and BCB layers of the silicon waveguides were calculated. In the analysis, it was assumed that the widths of the silica and BCB layers are considerably smaller than the acoustic wavelength, enabling calculating the effect of multiple reflections without accounting for the phase accumulated by the acoustic waves. For simplicity, notations “t.sub.a.fwdarw.b” and “r.sub.a.fwdarw.b” were used to respectively denote the transmission and reflection from layer a to layer b, where the expressions for the transmission and reflection coefficients are given in Eqs. 1 and 2. For waveguide 20, the normal stress in the SiO.sub.2 layer is given by
(35)
Substituting the expressions in Eqs. 1 and 2 in Eq. A1, the following was obtained:
(36)
Interestingly, the expression in Eq. A2 represents the transmission from water to silicon that would have been obtained if no SiO2 layer were present. In waveguide 20, the normal stress in the SiO2 and BCB layers is given by the following expression:
(37)
Substituting the again expressions in Eqs. 1 and 2, Eq. A3 may be written explicitly by
(38)
It is noted that the normal stress is identical in both the BCB and SiO.sub.2 layers since the derivation of Eqs. 1 and 2 was based on a continuous transition of the normal stress between layers.
Two connected metrics are frequently used to quantify the effect of mechanical perturbations on the optical properties of a waveguide. When the change is detected in optical phase (ϕ) in a waveguide of a given length due to uniform pressure (P), the phase sensitivity: Sϕ=dϕ/dP, is used. For applications in which a resonator is used, the normalized sensitivity is more appropriate: Sλ=dλres/(λres dP), where λres is the resonance wavelength and dλres is the shift in wavelength due to the perturbation. Sλ may be calculated by using the following equation:
(39)
where neff is the refractive index of guided mode and εz is the strain in the z direction. The relation between Sλ and Sϕ is given by
(40)
where λ is the incident light wavelength and L is the effective length of the sensor.
To calculate Sλ due to a plane longitudinal acoustic wave that impinges on the chip perpendicularly, we use the below model in which εz, εx.fwdarw.0. The calculation of Sλ is performed by computing the change in neff of the guided mode due to deformation and change in the refractive index of the materials by the photo-elastic effect, given by the following equations:
(41)
where C.sub.1 and C.sub.2 are the photo-elastic constants and v is the Poisson ratio. The values of the optical, mechanical, and acoustic parameters of silicon, silica, and BCB are summarized above in Table 1. It is noted that for Si and SiO2, the optical parameters were measured at λ=1550 nm, whereas for BCB their values were obtained at λ=1536 nm. The calculation of Sλ via Eqs. (3) and (5) used a mode solver to find the perturbations to the effective refractive index. In accordance with some applications of the present invention, COMSOL Multiphysics was used and the analysis was conducted for waveguide 20 and for waveguide with the silica over-cladding and without the BCB over-cladding, for both the TE the TM modes. For the wavelength λ=1540 nm, the values obtained for the TM and TE modes were n.sub.eff=1.78 and n.sub.eff=2.46, respectively, for the silica over-cladding and n.sub.eff=1.84 and n.sub.eff=2.47, respectively, for the BCB over-cladding (waveguide 20,
(42) Reference is now made to
(43) Reference is now made to
(44) In the experimental setup, shown in
(45) Reference is now made to
(46) The phase modulation of the light guided in the four silicon-core waveguides was measured in two acoustic configurations. In the first configuration, the acoustic wave was focused in the z direction on the center of the waveguide, as illustrated in
(47) Reference is now made to
(48)
(49) To determine the origin of the differences in the responses of the different waveguides, the numerical simulations were repeated for S_λ with ε
_y=0 instead of Eq. 5.b, i.e. without accounting for the contribution of the core deformation to the overall sensitivity. R was defined as the ratio between S_λ of the reduced model with
ε
_y=0 to that of the full model of Eqs. 5.a-5.d. For TM polarization, R=2.4×10{circumflex over ( )}(−2) and R=1.27 for the SiO2- and BCB-coated waveguides, were obtained.
ε
_y=0), or alternatively that the effect of deformation acts in the opposite direction to the photo-elastic effect and reduces the overall response. For TE polarization, R=−0.57 and R=3.6 for the SiO2- and BCB-coated waveguides, were obtained. Again, in the BCB-coated waveguide (waveguide 20), R>1 was obtained typically due to the photo-elastic effect and waveguide deformation being in opposite directions. In the SiO2-coated waveguides, R<0 was obtained since the response for
ε
_y=0 had an opposite sign to that of the total response, indicating that the contribution of the waveguide deformation was larger in magnitude than of that of the photo-elastic effect and had an opposite sign.
(50) Reference is now made to
(51) In
(52) Since the initial bipolar signal measured with the silicon waveguides represent the average acoustic signal integrated over a length of 2 mm, the sensitivity Sλ of the BCB-coated waveguide 20 may be quantified using the hydrophone measurement. While the peak-to-peak pressure at the focus of the transducer was 1.3 MPa, the average signal over the 2 mm length was 0.26 MPa, leading to S_ϕ=0.31 rad MPa{circumflex over ( )}(−1) and S_ϕ=0.055 rad MPa{circumflex over ( )}(−1) for the BCB-coated TM and TE waveguides, respectively. Using Eq. 4 and accounting for the hydrophone calibration accuracy, one obtains S_λ=(21±3.2)×10{circumflex over ( )}(−6) MPa{circumflex over ( )}(−1) and S_λ=(2.7±0.41)×10{circumflex over ( )}(−6) MPa{circumflex over ( )}(−1) for the BCB-coated TM and TE waveguides, respectively.
(53) Reference is now made to
(54)
(55) Reference is now made to
(56) Reference is again made to
(57) For longitudinal waves, the enhancement in Sλ was approximately 4.82 for the TM mode and 1.4 for the TE mode. As shown, the effect of reflection and refraction in the cladding due to acoustic impedance mismatches, were taken into account. As shown, the effect of BCB on the propagation of the acoustic waves is negligible and the enhancement in Sλ may be solely attributed to the changes in the optical properties of the waveguides for a given value of σ_y (Eqs. 5.a-5.d) rather than to mechanical enhancement in σ_y due to acoustic propagation effects. As shown, both for polarizations, the sensitivity of the BCB-coated waveguides was mostly due to the photo-elastic effect, where the effect of the waveguide deformation was with an opposite sign and thus reduced the overall response. While in the TM waveguide, this reduction in sensitivity, calculated via 100%×(1−R{circumflex over ( )}(−1)), was relatively small and was equal to merely 21% (R=1.27), in the TE waveguide the reduction was much more significant and reached 72% (R=3.6), leading to a much weaker total response. The higher weight of the photo-elastic effect in the response of the BCB-coated TM waveguide may be explained by the spatial distribution of its mode (
(58) Although results shown herein relate to an acoustic wave with normal incidence, the angular dependence of the acoustic response was additionally experimentally studied by the inventors to evaluate the effect of SAWs. For SAWs, the use of a BCB over-cladding led to an order of magnitude reduction in the response of the TE mode, whereas for the TM mode the magnitude of the response did not change considerably. Nonetheless, because of its significant enhancement in sensitivity to longitudinal waves, the relative susceptibility of the TM mode to SAWs was also significantly reduced by the BCB coating.
(59) In all the measurements, the initial bipolar signal detected by the silicon waveguides was accompanied by acoustic reverberations, which may be explained by the impedance mismatch between the silicon substrate and its surrounding. Since the speed of sound in silicon is approximately 8400 m/s, the acoustic roundtrip in the 700 μm thick silicon substrate was 0.17 μs, comparable to the duration of the ultrasound burst, as measured by the hydrophone. Thus, the leading edge of the pulse directly detected by the waveguide experiences a delay of 0.17 μs before its echo from the back of the silicon substrate is detected again, overlapping with the trailing edge of the original pulse. Because of this overlap, the reverberations appear continuously in the measured signals, rather than at isolated time instances. In both the TE and TM waveguides, the use of BCB for the over-cladding reduced the effect of reverberations, where the weakest effect was obtained for the BCB-coated TM waveguides. Further reduction in the effect of the reverberation may be achieved by using an additional lossy backing layer with high acoustic impedance, similar to those used in piezoelectric transducers, or by locally thinning of the silicon substrate below the waveguides to a thickness that is considerably smaller than the acoustic wavelength.
(60) In terms of sensitivity, the S_λ achieved shown herein for the BCB-coated TM waveguide is approximately 50% higher than a value tested for a polystyrene micro-ring, 13.5×10
{circumflex over ( )}(−6) MPa{circumflex over ( )}(−1) (results not shown). It is note that that S_λ is a property of the waveguide and does not depend on the propagation length, enabling a valid comparison between waveguides used in different configurations.
(61) In accordance with some applications of the present invention, further enhancement in Sλ, beyond the one shown herein may be achieved by exposing more of the guided mode to the polymer over-cladding or using over-cladding materials with higher photo-elastic coefficients than those of BCB. While in principle one may use the water surrounding the chip as the over-cladding material by exposing the silicon core, this approach has several limitations. First, water and silicon are incompatible materials in terms of optical transparency. While silicon-photonics devices usually operate at telecom wavelengths owing to the opacity of silicon to visible light, the absorption coefficient of water exceeds 5 dB/cm for wavelengths above 1,200 nm and reaches 50 dB/cm at 1,550 nm, which hinders the production of high-Q resonators. Second, exposing the silicon core may limit clinical applications in which the sensor needs to be in contact with tissue or bodily fluids. Therefore, in some applications of the present invention, an over-cladding with materials characterized by a higher photo-elastic coefficients than that of BCB, is used.
(62) Reference is still made to
(63) A potential advantage in an acoustic sensor described herein is in that the in terms of fabrication simplicity, repeatability and low-cost compatible with mass production. This potential advantage stems from the fabrication process of a sensor as described herein, which is compatible with CMOS fabrication technology, which is the backbone of the mass production capabilities of the electronics industry
(64) It is to be noted that for some applications, techniques and apparatus described in the following publications are combined with techniques and apparatus described herein: Rosenthal et al. “Embedded ultrasound sensor in a silicon-on-insulator photonic platform” Appl. Phys. Lett. 104, 021116 (2014); and Ouyang et al. “Integrated photonics interferometric interrogator for a ring-resonator ultrasound sensor Vol. 27, Issue 16, pp. 23408-23421 (2019)
(65) It will be appreciated by persons skilled in the art that the present invention is not limited to what has been particularly shown and described hereinabove. Rather, the scope of the present invention includes both combinations and subcombinations of the various features described hereinabove, as well as variations and modifications thereof that are not in the prior art, which would occur to persons skilled in the art upon reading the foregoing description.