POWER MODULE

Abstract

A power module (10) having a leadframe (20), a power semiconductor (30) arranged on the leadframe (20), a base plate (40) for dispersing heat generated by the power semiconductor (30) and a potting compound (50) surrounding the leadframe (20) and the power semiconductor (30), that physically connects the power semiconductor (30) and/or the leadframe (20) to the base plate (40).

Claims

1. A power module having a leadframe, a power semiconductor arranged on the leadframe, a base plate for dispersing heat generated by the power semiconductor, and a potting compound surrounding the leadframe and the power semiconductor, that physically connects the power semiconductor and/or the leadframe to the base plate.

2. The power module according to claim 1, wherein the potting compound is an inorganic compound.

3. The power module according to claim 1, wherein the potting compound is cement.

4. The power module according to claim 1, wherein the potting compound exhibits a thermal coefficient of expansion of 5 to 10 ppm/K.

5. The power module according to claim 1, wherein the potting compound exhibits a layer arranged between the leadframe and the base plate.

6. The power module according to claim 1, wherein the potting compound exhibits a layer 20 to 200 μm thick between the leadframe and the base plate.

7. The power module according to claim 1, wherein the base plate is designed as a heatsink.

8. A method for manufacturing a power module having a leadframe, a power semiconductor, and a base plate, having the following steps connecting the power semiconductor to the leadframe, and potting the power semiconductor connected to the leadframe with a potting compound while at the same time physically connecting the base plate to the potting compound.

9. The method according to claim 8, wherein a layer of potting compound having a layer thickness of 20 to 200 μm is designed between the leadframe and the base plate.

10. The method according to claim 8, wherein the potting compound is an inorganic compound.

11. The method according to claim 8, wherein the potting compound is cement.

12. The method according to claim 8, wherein the potting compound exhibits a thermal coefficient of expansion of 5 to 10 ppm/K.

13. The power module according to claim 2, wherein the potting compound is cement.

14. The power module according to claim 2, wherein the potting compound exhibits a thermal coefficient of expansion of 5 to 10 ppm/K.

15. The power module according to claim 3, wherein the potting compound exhibits a thermal coefficient of expansion of 5 to 10 ppm/K.

16. The power module according to claim 2, wherein the potting compound exhibits a layer arranged between the leadframe and the base plate.

17. The power module according to claim 3, wherein the potting compound exhibits a layer arranged between the leadframe and the base plate.

18. The power module according to claim 4, wherein the potting compound exhibits a layer arranged between the leadframe and the base plate.

19. The power module according claim 2, wherein the potting compound exhibits a layer 20 to 200 μm thick between the leadframe and the base plate.

20. The power module according claim 3, wherein the potting compound exhibits a layer 20 to 200 μm thick between the leadframe and the base plate.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Using exemplary embodiments of the invention that are of particularly preferable design, that are illustrated in the drawings, the invention is explained in more detail. In the drawings:

[0030] FIG. 1 shows a schematic sectional view of a power module according to the invention; and

[0031] FIG. 2 shows a flow chart for illustrating the sequence of the inventive method.

DETAILED DESCRIPTION

[0032] FIG. 1 shows a schematic cross section through a power module according to the invention of particularly preferable design. The power module 10 exhibits a leadframe 20 and a power semiconductor 30 arranged on the leadframe 20. It is obvious that also a plurality of power semiconductors and other electronic components can be arranged on the leadframe 20.

[0033] The leadframe 20 and the power semiconductor 30 are surrounded by a preferable inorganic potting compound 50. The potting compound 50 exhibits a function of mechanically protecting and electrically insulating the power semiconductor 30 arranged on the leadframe 20. Over and above this, the potting compound 50 effects a physical connection between the leadframe 20 and the base plate 40, so that the potting of the leadframe 20 and the power semiconductor 30 and physically connecting the base plate 40 to the potting compound 50 can be accomplished in one process step.

[0034] The connection of the power semiconductor 30 to the leadframe 20 may be achieved by a number of known techniques. These may include soldering, brazing or sintering. The potting compound 50 acts not only as a means of encapsulation (thus sealing the semiconductor from the outside environment), but also as an adhesive (fixing in a permanent manner the structure comprising the power semiconductor 30 and leadframe 20 to the base plate 40).

[0035] For this purpose—as FIG. 2 shows in a flow chart of the process steps required for this purpose—in a first step 100 at first the leadframe 20 is connected to the power semiconductor 30. In a second step 110, the power semiconductor 30 connected to the leadframe 20 is surrounded with the potting compound 50 while simultaneously physically connecting a base plate 40 to the potting compound 50.

[0036] It can, for example, be envisaged here that the base plate 40 is inserted into a mould and the mould is filled with the potting compound 50. The leadframe 20 supporting the power semiconductor 30 is then lowered into the liquid potting compound 50 while maintaining a predetermined distance from the base plate. After (completely) curing the potting compound 50, the finished power module 10 can be removed from the mould.

[0037] As an alternative, the base plate 40 can be inserted into a mould, the leadframe 20 supporting the power semiconductor 30 then being arranged above the base plate 40 while maintaining a predetermined distance and being immobilised in this position. A flowable potting compound 50 is only then transferred into the mould and flows around the leadframe 20 supporting the power semiconductor 30. After (complete) curing of the potting compound 50, the leadframe 20 supporting the power semiconductor 30 is then completely surrounded by the potting compound 50, the base plate 40 is also physically connected to the potting compound 50.

[0038] Finally it can also be envisioned to envelope the leadframe 20 supporting the power semiconductor 30 completely with the potting compound 50 for example by immersion and to bring it into contact with a base plate 40 prior to (complete) curing. To this end, for example a leadframe 20 immersed into the potting compound 50 could be lowered on a base plate 40 for the purpose of curing the potting compound 50. During curing of the potting compound 50, the potting compound 50 will connect itself—like an adhesive—to the base plate 40 so that the potting compound 50 physically connects the power semiconductor 30 and/or the leadframe 20 to the base plate 40.

[0039] While the present disclosure has been illustrated and described with respect to a particular embodiment thereof, it should be appreciated by those of ordinary skill in the art that various modifications to this disclosure may be made without departing from the spirit and scope of the present disclosure.