Method for Forming a Vertical Hetero-stack and a Device Including a Vertical Hetero-stack

Abstract

Embodiments described herein include a method for forming a vertical hetero-stack and a device including a vertical hetero-stack. An example method is used to form a vertical hetero-stack of a first nanostructure and a second nanostructure arranged on an upper surface of the first nanostructure. The first nanostructure is formed by a first transition metal dichalcogenide, TMDC, material and the second nanostructure is formed by a second TMDC material. The example method includes providing the first nanostructure on a substrate. The method also includes forming a reactive layer of molecules on the first nanostructure along a periphery of the upper surface. The method further includes forming the second nanostructure by a vapor deposition process. The second TMDC material nucleates on the reactive layer of molecules along the periphery and grows laterally therefrom to form the second nanostructure on the upper surface.

Claims

1. A method for forming a vertical hetero-stack of a first nanostructure and a second nanostructure arranged on an upper surface of the first nanostructure, wherein the first nanostructure is formed by a first transition metal dichalcogenide, TMDC, material and the second nanostructure is formed by a second TMDC material, the method comprising: providing the first nanostructure on a substrate, wherein the upper surface of the first nanostructure is formed by a basal plane of the first TMDC material; forming a reactive layer of molecules on the first nanostructure along a periphery of the upper surface; and forming the second nanostructure by a vapor deposition process, wherein the second TMDC material nucleates on the reactive layer of molecules along the periphery and grows laterally therefrom to form the second nanostructure on the upper surface.

2. The method according to claim 1, wherein the second nanostructure is formed directly on the upper surface of the first nanostructure.

3. The method according to claim 1, further comprising, prior to forming the second nanostructure, forming a dielectric layer on the substrate adjacent to the first nanostructure by a dielectric layer deposition process, wherein the dielectric layer is formed with a thickness corresponding to a thickness of the first nanostructure.

4. The method according to claim 1, wherein each molecule of the reactive layer of molecules comprises: a head group bonding to the first nanostructure; and a tail group forming a reactive site for a precursor of the vapor deposition process.

5. The method according to claim 4, wherein the reactive layer of molecules is formed by a self-assembled monolayer of molecules.

6. The method according to claim 4, wherein each molecule of the reactive layer of molecules comprises: a thiol head group or a selenol head group; and a thiol tail group, a hydroxy tail group, or a carboxyl tail group.

7. The method according to claim 3, further comprising: prior to forming the dielectric layer on the substrate adjacent to the first nanostructure, forming a process layer of molecules on the first nanostructure along the periphery of the upper surface, wherein each molecule of the process layer of molecules comprises: a head group bonding to the first nanostructure; and a tail group that is inert with respect to the dielectric layer deposition process, and subsequent to forming the dielectric layer, removing the process layer, wherein a trench is formed between the dielectric layer and the first nanostructure along the periphery of the upper surface; and forming the reactive layer of molecules in the trench.

8. The method according to claim 7, wherein a length of the molecules of the process layer of molecules is greater than a length of the molecules of the reactive layer of molecules.

9. The method according to claim 3, further comprising: prior to forming the dielectric layer on the substrate adjacent to the first nanostructure, forming a process layer of molecules on the first nanostructure along the periphery of the upper surface, wherein each molecule of the process layer of molecules comprises a head group bonding to the first nanostructure; and a tail group that is inert with respect to the dielectric layer deposition process, and subsequent to forming the dielectric layer, converting the process layer into the reactive layer of molecules by activating the tail group of the molecules of the process layer with respect to a precursor of the vapor deposition process.

10. The method according to claim 1, further comprising: forming a mask on the first nanostructure, wherein the mask covers a first portion of the first nanostructure; and exposing a second portion of the first nanostructure, wherein during the deposition process the mask prevents formation of the second nanostructure on the upper surface of the first portion of the first nanostructure.

11. The method according to claim 10, wherein the reactive layer of molecules is formed along an entire portion of the periphery of the upper surface being exposed by the mask.

12. The method according to claim 10, wherein the second TMDC material, during the vapor deposition process, is grown laterally to form: a first portion of the second nanostructure overlapping the second portion of the first nanostructure; and a second portion of the second nanostructure protruding beyond the periphery of the upper surface of the second portion of the first nanostructure.

13. The method according to claim 1, further comprising: forming a gate stack on an upper surface of the second nanostructure above a region of overlap between the second nanostructure and the first nanostructure; forming a source or drain electrode in contact with the first portion of the first nanostructure; or forming a source or drain electrode in contact with the second nanostructure.

14. The method according to claim 1, further comprising: forming a nanostructure of a sacrificial material on the substrate; and forming the first nanostructure on the substrate by a first deposition process during which a feature of the sacrificial material is removed from the substrate by forming a volatile reaction product with a precursor of the first deposition process, wherein the sacrificial material is replaced by the first TMDC material, wherein the first TMDC material is selectively deposited on surface portions of the substrate to form the first nanostructure of the first TMDC material, and wherein the surface portions were covered by the feature of the sacrificial material.

15. A device including a vertical hetero-stack of a first TMDC material and a second TMDC material, the device comprising: a first nanostructure of the first TMDC material, wherein an upper surface of the first nanostructure is formed by a basal plane of the first TMDC material; a layer of molecules arranged on at least one side surface of the first nanostructure and extending along a periphery of the upper surface; and a second nanostructure of the second TMDC material arranged on the upper surface of the first nanostructure, wherein the second nanostructure is displaced in relation to the first nanostructure to expose a first portion of the first nanostructure and to overlap a second portion of the first nanostructure, wherein a first portion of the second nanostructure is arranged to overlap the second portion of the first nanostructure, and wherein a second portion of the second nanostructure is arranged to protrude beyond the periphery of the upper surface of the first nanostructure.

16. The device according to claim 15, further comprising: a substrate; and a dielectric layer arranged on the substrate in a region adjacent to the first nanostructure, wherein the dielectric layer has a thickness corresponding to a thickness of the first nanostructure.

17. A vertical hetero-stack of a first nanostructure and a second nanostructure arranged on an upper surface of the first nanostructure, wherein the first nanostructure is formed by a first transition metal dichalcogenide, TMDC, material and the second nanostructure is formed by a second TMDC material, wherein the vertical hetero-stack is formed by a process that comprises: providing the first nanostructure on a substrate, wherein the upper surface of the first nanostructure is formed by a basal plane of the first TMDC material; forming a reactive layer of molecules on the first nanostructure along a periphery of the upper surface; and forming the second nanostructure by a vapor deposition process, wherein the second TMDC material nucleates on the reactive layer of molecules along the periphery and grows laterally therefrom to form the second nanostructure on the upper surface.

18. The vertical hetero-stack of claim 17, wherein the second nanostructure is formed directly on the upper surface of the first nanostructure.

19. The vertical hetero-stack of claim 17, wherein each molecule of the reactive layer of molecules comprises: a head group bonding to the first nanostructure; and a tail group forming a reactive site for a precursor of the vapor deposition process.

20. The vertical hetero-stack of claim 19, wherein the reactive layer of molecules is formed by a self-assembled monolayer of molecules.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0126] The above, as well as additional features , will be better understood through the following illustrative and non-limiting detailed description of example embodiments, with reference to the appended drawings. In the drawings, like reference numerals will be used for like elements unless stated otherwise.

[0127] FIG. 1A schematically illustrates a portion of a method for forming a vertical hetero-stack, according to example embodiments.

[0128] FIG. 1B schematically illustrates a portion of a method for forming a hetero-stack, according to example embodiments.

[0129] FIG. 1C schematically illustrates a portion of a method for forming a hetero-stack, according to example embodiments.

[0130] FIG. 1D schematically illustrates a portion of a method for forming a hetero-stack, according to example embodiments.

[0131] FIG. 1E schematically illustrates a portion of a method for forming a hetero-stack, according to example embodiments.

[0132] FIG. 1F schematically illustrates a portion of a method for forming a hetero-stack, according to example embodiments.

[0133] FIG. 1G schematically illustrates a portion of a method for forming a hetero-stack, according to example embodiments.

[0134] FIG. 1H schematically illustrates a portion of a method for forming a hetero-stack, according to example embodiments.

[0135] FIG. 1I schematically illustrates a portion of a method for forming a hetero-stack, according to example embodiments.

[0136] FIG. 1J schematically illustrates a portion of a method for forming a hetero-stack, according to example embodiments.

[0137] FIG. 1K schematically illustrates a portion of a method for forming a hetero-stack, according to example embodiments.

[0138] FIG. 1L schematically illustrates a portion of a method for forming a hetero-stack, according to example embodiments.

[0139] FIG. 1M schematically illustrates a portion of a method for forming a hetero-stack, according to example embodiments.

[0140] FIG. 1N schematically illustrates a portion of a method for forming a hetero-stack, according to example embodiments.

[0141] FIG. 1O schematically illustrates a portion of a method for forming a hetero-stack, according to example embodiments.

[0142] FIG. 1P schematically illustrates a portion of a method for forming a hetero-stack, according to example embodiments.

[0143] FIG. 2A schematically illustrates a portion of a method for providing a first nanostructure, according to example embodiments.

[0144] FIG. 2B schematically illustrates a portion of a method for providing a first nanostructure, according to example embodiments.

[0145] FIG. 2C schematically illustrates a portion of a method for providing a first nanostructure, according to example embodiments.

DETAILED DESCRIPTION

[0146] A method for forming a vertical hetero-stack of a first TMDC material and a second TMDC material will now be described with reference to FIGS. 1A through 1P.

[0147] FIGS. 1A, 1C, 1E, 1G 1I, 1K, 1M, 1O are top-views of a substrate 110. FIGS. 1B, 1D, 1F, 1H, 1J, 1L, 1N, 1P each shows a cross-sectional view along the substrate 110 as indicated by the line A-A in FIG. 1A. FIGS. 1A-1P show only portions of the substrate 110 and the substrate 110 may extend horizontally/laterally beyond the illustrated portions.

[0148] According to the method a first nanostructure 120 is provided on the substrate 110. The first nanostructure is formed by a first TMDC material. As illustrated, a further first nanostructure 121 may be provided on the substrate 110. In the following, reference will only be made to the first nanostructure 120 however the following description applies correspondingly also to the first nanostructure 121. It may further be noted that more than the two first nanostructures 120, 121 may be provided on the substrate 110. Each such first nanostructure may be formed by the first TMDC material and be used to form a respective hetero-stack in accordance with the following method.

[0149] As shown in FIG. 1B the substrate 110 may include a stack of sub-layers which in a bottom-up direction includes a substrate sub-layer 112 and a buffer sub-layer 114. The substrate 110 may further be arranged on a (not shown) handling wafer. In that the case the substrate sub-layer 112 may be arranged between the handling wafer and the buffer sub-layer 114.

[0150] The substrate sub-layer 112 may be formed by a semiconductor-including material. The substrate sub-layer 112 may be a silicon-based (Si) sub-layer such as a silicon on insulator (SOI) substrate. The substrate sub-layer 112 may also be a gallium arsenide (GaAs) substrate, a gallium arsenide phosphide (GaAsPh) substrate, an indium gallium arsenide (InGaAs) substrate, a silicon germanium (SiGe) substrate, a silicon on glass substrate, a silicon on sapphire substrate, or a germanium on insulator substrate.

[0151] The buffer sub-layer 114 may be formed by a layer of a dielectric material. The buffer sub-layer 114 may be formed by a silicon oxide such as SiO.sub.2. The buffer sub-layer 114 may also be formed by a high-K dielectric material such as Al.sub.2O.sub.3, Si.sub.3N.sub.4, HfO.sub.2, or ZrO.sub.2.

[0152] The first nanostructure 120 is provided on a main surface of the substrate 110. For the illustrated substrate 110, the main surface is formed by the upper surface 114a of the buffer sub-layer 114. More generally, the main surface may be formed by the upper surface of the uppermost layer or sub-layer of the substrate.

[0153] The first nanostructure 120 presents an elongated shape. The first nanostructure 120 may be referred to as a lateral or horizontal nanowire. The first nanostructure 120 may be formed by one monolayer or a stack of a few monolayers of the first TMDC material. The first nanostructure 120 may present a width dimension and a thickness dimension (or equivalently a height dimension) of a few to tens of nanometers.

[0154] The first nanostructure 120 has an upper surface 122. The first nanostructure 120 is provided on the substrate 110 such that the upper surface 122 is formed by a basal plane of the first TMDC material.

[0155] The first nanostructure 120 further presents the side surfaces 124, 125. The side surfaces 124, 125 form respective end surfaces of the first nanostructure 120. The first nanostructure 120 further presents side surfaces 126, 127 extending along the first nanostructure 120 on opposite sides thereof. The side surfaces 124, 125, 126, 127 are formed by the crystal edges of the one or more monolayers of the first TMDC material forming the first nanostructure 120.

[0156] In FIG. 1C and FIG. 1D, a mask 130 has been formed on the first nanostructure 120. The mask 130 is formed to cover a first portion of the first nanostructure 120. The mask 130 covers the region of the upper surface 122 on the first portion of the first nanostructure 120. The mask 130 may also cover the regions of the side surfaces 124, 126, 127 on the first portion of the first nanostructure 120. The mask 130 exposes the region of the upper surface 122 on the second portion of the first nanostructure 120. The mask 130 also exposes the regions of the side surfaces 125, 126, 127 on the second portion of the first nanostructure 120.

[0157] As will be further described below, the mask 130 may be used for controlling a dimension of the overlap between the first nanostructure 120 and a second nanostructure 150. In the drawings, the mask 130 is shown to cover the first nanostructure 120 along roughly half the longitudinal dimension of the first nanostructure 120. However, the mask 130 may also be defined to cover a greater or smaller part of the first nanostructure 120.

[0158] The mask 130 may be formed by depositing a masking layer on the substrate 110 and the first nanostructure 120. The mask 130 may be defined by patterning the masking layer using a conventional lithography and etching process to remove the masking layer from the second portion of the first nanostructure 120 while keeping the masking layer on the first portion of the first nanostructure 120.

[0159] The mask 130 may be formed by SiO.sub.2. The masking layer may be formed by depositing a layer of SiO.sub.2 on a buffer sub-layer 114 of a high-K dielectric. The SiO.sub.2 may be deposited in a plasma enhanced CVD process. The undesired portions of the SiO.sub.2 masking layer may subsequently be selectively removed from the substrate 110 and the first nanostructure 120 using an HF-based etchant.

[0160] In FIG. 1C and FIG. 1D, the first nanostructures 120, 121 are masked by a same mask 130. However, it is equally possible to mask different first nanostructures with separate masks.

[0161] Following forming of the mask 130, a reactive layer 128 is formed on the first nanostructure 120 (FIG. 1E and FIG. 1F). The reactive layer 128 is formed on the regions of the side surfaces 125, 126, 127 exposed by the mask 130. The reactive layer 128 is thus formed along the exposed part of the periphery of the upper surface 122. The exposed part of the periphery of the upper surface 122 is formed by the outer edges of the exposed region of the upper surface 122. As shown, the reactive layer 128 may be formed to be coextensive with the entire exposed periphery of the upper surface 122. As illustrated in FIG. 1F, an upper edge portion of the reactive layer 128 is formed to be flush with the upper surface 122.

[0162] The reactive layer 128 may be formed by a layer of molecules. The reactive layer 128 may be formed as a self-assembled monolayer of molecules (SAM), wherein the reactive layer 128 may form on the first nanostructure by chemisorptions of the head group on the first nanostructure 120, in particular on the side surfaces 125, 126, 127 thereof.

[0163] Each molecule of the reactive layer 128 may consist of a head group X, a spacer group or backbone group R and a tail group Y. The molecules may accordingly be generally described by the chemical formula X—R—Y. R may denote a carbon backbone or carbon chain. The carbon backbone or chain may comprise straight or cyclic sub-groups which may include saturated and/or unsaturated hydrogen carbons. The carbon backbone or chain may be interrupted by, i.e. include, one or more heteroatoms.

[0164] The head group X is selected to bind to the side surfaces 125, 126, 127 formed by the crystal edges of the first TMDC material. Since the upper surface 122 of the first nanostructure 120 is formed by a basal plane of the first TMDC material the head group will not bind to the upper surface 122. The head group may further be selected to not form bonds with the mask 130 or the substrate 110 (i.e. the buffer sub-layer 114).

[0165] The tail group Y is selected to form a reactive site for a precursor of the deposition process of the second TMDC material which is to be described below. The tail groups of the reactive layer 128 form the outer surfaces of the reactive layer 128 (i.e. the surfaces facing away from the first nanostructure 120).

[0166] A SAM of X—R—Y molecules may be formed on the first nanostructure 120 by submerging the substrate with the first nanostructure 120 formed thereon in a solution of X—R—Y diluted in an organic solvent (e.g. ethanol) for a duration sufficient for allowing formation of a SAM covering the (exposed regions of) side surfaces 125, 126, 127 of the first nanostructure 120. However, it is also possible to form a SAM on the first nanostructure 120 by vapor phase deposition.

[0167] Each molecule of the reactive layer 128 may include a thiol head group and a thiol tail group, wherein each molecule may be described by the chemical formula HS—R—SH. Each molecule may alternatively include a thiol head group and a hydroxy or carboxyl tail group, wherein each molecule may be described by the chemical formula HS—R—OH or HS—R—C(O)OH. Each molecule may alternatively include a selenol head group instead of the thiol head group.

[0168] The reactive layer 128 may be formed by, prior to forming the dielectric layer 140 as described below, forming an “intermediate” layer or “process” layer of molecules on the first nanostructure 120 along the periphery of the upper surface 122. The process layer may be formed as a SAM of molecules, each molecule including a head group bonding to the first TMDC material and a tail group being inert with respect to the dielectric layer deposition process. Subsequent to forming the dielectric layer 140, the process layer may be converted into the reactive layer 128 by activating the tail group of the molecules of the process layer with respect to a precursor of the deposition process of the second TMDC material.

[0169] A process layer of molecules including a thiol head group, a backbone and a cyano-alkane tail group (HS—R—CN) may be converted to a reactive layer 128 of molecules including a thiol head group, a backbone and a hydroxyl tail group (HS—R—OH) or carboxyl tail group (HS—R—C(O)OH). A —CN tail group may be converted into an —OH tail group or a —C(O)OH tail group by hydrolysis using acid or base catalysis. A —CN tail group may also be converted into an —C(O)OH tail group by heat treatment or by UV treatment (for instance using a wavelength of 254 nm). Each molecule may alternatively include a selenol head group instead of the thiol head group.

[0170] Alternatively the method may comprise, prior to forming the dielectric layer 140 as described below, forming a “sacrificial” layer or “process” layer of molecules on the first nanostructure 120 along the periphery of the upper surface 122. The process layer may be formed as a (SAM) layer of molecules, each molecule including a head group bonding to the first TMDC material and a tail group being inert with respect to the dielectric layer deposition process. Subsequent to forming the dielectric layer 140, the process layer may be removed wherein a trench is formed between the dielectric layer 140 and the first nanostructure 120, along the periphery of the upper surface 122. The reactive layer 128 may thereafter be formed on the first nanostructure 120 in the trench.

[0171] A process layer may be formed by HS—R—Y, wherein Y represents a hydrophobic tail group. The tail group may be a hydrocarbon. A hydrocarbon tail group may be selected as an alkane tail group (for instance —CH.sub.3) or as a cycloalkane tail group (for instance —C.sub.6H.sub.5). The tail group may be an organofluorine. An organofluorine tail group may be selected as an trifluoromethyl tail group. A tail group may be selected as a cyano-alkane tail group. Each molecule may alternatively include a selenol head group instead of the thiol head group.

[0172] A process layer of for instance HS—R—CH.sub.3, HS—R—C.sub.6H.sub.5, HS—R—CF.sub.3 or HS—R—CN may be removed by a plasma-based etch process. The etch process may for instance include subjecting the process layer to an H.sub.2 plasma. A process layer may also be removed by heating the process layer to a temperature sufficient for causing desorption of the molecules. A reactive layer 128 of HS—R—SH may thereafter be formed in the trench.

[0173] To facilitate deposition of the reactive layer 128 in the trench, the chain length of the R backbone of the molecules of the reactive layer 128 may be selected to be shorter than the chain length of the R backbone of the molecules of the process layer. For instance, for the process layer an alkyl backbone of a chain length between C4 and C18 may be used whereas for the reactive layer 128 an alkyl backbone of a chain length less than the chain length of the process layer may be used.

[0174] In FIG. 1G and FIG. 1H, a dielectric layer 140 is formed on the substrate 110. The dielectric layer 140 is formed on a region of the substrate 110 adjacent to the second portion of the first nanostructure 120. The dielectric layer 140 is formed with a thickness such that an upper surface of the dielectric layer 140 becomes flush with (or at least substantially flush with) the upper surface 122 of the first nanostructure 120.

[0175] The dielectric layer 140 may be formed by a selective area deposition process. The selective area deposition may be achieved by depositing a high-K dielectric on a dielectric buffer sub-layer 114 in an ALD process using H.sub.2O as a precursor. The high-K dielectric may be Al.sub.2O.sub.3, ZrO.sub.2 or HfO.sub.2.

[0176] For instance an Al.sub.2O.sub.3 dielectric layer 140 may be selectively deposited on an Al.sub.2O.sub.3 buffer sub-layer 114 by ALD using the precursors trimethylaluminum (TMA) and H.sub.2O at a substrate temperature in the range 100-300° C. (e.g. by controlling the temperature of the susceptor of the reactor and/or by controlling the ambient reactor temperature). As another example an HfO.sub.2 dielectric layer 140 may be selectively deposited on an HfO.sub.2 buffer sub-layer 114 by ALD using the HfCl.sub.4 and H.sub.2O at a substrate temperature in the range 100-300° C. In both these examples a duration of the purging between the ALD pulses may be sufficiently long to limit physisorption of the precursors by the first TMDC material.

[0177] With reference to FIGS. 1I through 1L, a second nanostructure 150 of a second TMDC material is being formed on the first nanostructure 120. More specifically, the second nanostructure 150 is formed on the second portion of the first nanostructure 120, i.e. the portion of the first nanostructure 120 exposed by the mask 130.

[0178] The second TMDC material may be deposited by a CVD process or an ALD process including a transition metal-including precursor and a chalcogenide-including precursor.

[0179] Initially, during the deposition process, one of the precursors may react with the reactive layer 128 such that the metal element and/or the chalcogenide element forms a bond with the reactive layer 128 and hence is deposited on the reactive layer 128 along the periphery of the upper surface 122. More specifically, the metal element and/or the chalcogenide element may form a bond with the reactive tail group of the molecules of the reactive layer 128 at the periphery of the upper surface 122. Due to the comparably lower reactivity of the basal plane of the first TMDC material the deposition may be controlled with relative ease such that the precursor is prevented from reacting with the basal plane of the first TMDC material but allowed to react with the tail groups. The precursors may subsequently react with metal elements and/or the chalcogenide elements bonded to the tail groups wherein the second TMDC material may nucleate on the reactive layer 128. Thereby, a “seed structure” of the second TMDC material may gradually form along the periphery of the upper surface 122.

[0180] From the second TMDC material nucleated along the periphery of the upper surface 122 (i.e. the “seed structure”), the second TMDC material may grow laterally by the precursors reacting with the crystal edges of the deposited second TMDC material. Due to the comparably lower reactivity of the basal plane of the first TMDC material and the second TMDC material the deposition may be controlled with relative ease such that the second TMDC material is prevented from nucleating directly on the basal plane of the first TMDC material or the basal plane of the already deposited second TMDC material, but allowed to grow on only the edges of the already deposited second TMDC material. Thereby single monolayer growth of the second TMDC material may be achieved.

[0181] The deposition process may be continued until a desired coverage of the upper surface 122 by the second TMDC material has been obtained. FIG. 1K and FIG. 1L illustrate a state wherein the second TMDC material has been grown such that the second nanostructure 150 has been formed to completely cover the upper surface 122 on the exposed (i.e. by the mask 130) second portion of the first nanostructure 120. The mask 130 prevents the second TMDC material from being deposited on the masked first portion of the first nanostructure 120.

[0182] During the deposition process, the dielectric layer 140 prevents the vertical outer surface portions of the reactive layer 128 (e.g. formed by tail groups) covered by or submerged in the dielectric layer 140 to be exposed to, and hence react with, the precursors. By forming the dielectric layer 140 to be flush with the upper surface 122 of the first nanostructure 120, lateral (outward) growth of the second TMDC material from the vertical outer surface portions of the reactive layer 128 at the level below the upper surface 122 may thereby be prevented.

[0183] The lateral growth of the second TMDC material is schematically indicated by the arrows in FIG. 1I and FIG. 1J. As shown, the lateral growth may occur inwardly along the upper surface 122, and outwardly beyond the periphery of the upper surface 122 and the reactive layer 128. Thereby, the second nanostructure 150 is grown laterally to form a first portion overlapping the second portion of the first nanostructure 120 and to form a second portion, protruding above the dielectric layer 140. The second portion of the first nanostructure 120 and the first portion of the second nanostructure 150 thus form an overlapping region 160 of the hetero-stack.

[0184] The dielectric layer 140 may accommodate for the height difference between the upper surface of the substrate 110 and the upper surface 122 of the first nanostructure and accordingly support the protruding second portion of the second nanostructure 150.

[0185] In FIGS. 1I-1L the second TMDC material is shown to grow perpendicular to the periphery of the upper surface 122, to form a rectangular second nanostructure 150. However in practice, the second nanostructure 150 may deviate from a perfect rectangular shape. The final shape of the second nanostructure 150 may depend inter alia on the dimensions, the shape and/or the crystal structure of the first nanostructure 120 and also on the crystal structure of the second TMDC material. The latter factor may bear increasing weight as the lateral dimensions of the first nanostructure 120 are reduced.

[0186] Various combinations of the first and the second TMDC material are possible. The first TMDC material may be anyone of: WS.sub.2, WSe.sub.2, WTe.sub.2, MoS.sub.2, MoSe.sub.2, MoTe.sub.2, HfS.sub.2, HfSe.sub.2, Hffe.sub.2, ZrS.sub.2, ZrSe.sub.2, or ZrTe.sub.2.

[0187] The second feature 150 may be formed by growing WS.sub.2 on the first nanostructure 120 from the vapor phase precursors WF.sub.6 and H.sub.2S.

[0188] WS.sub.2 may be grown in an ALD or CVD process. The CVD process may be pulsed or continuous. The deposition process may be performed at a temperature in the range of 250-450° C. (e.g. by controlling the temperature of the susceptor of the reactor and/or by controlling the ambient reactor temperature). To limit the nucleation density during the initial stage of the deposition process, the precursors may be introduced at a relatively low rate, e.g. 4 mTorr WF.sub.6, 60 mTorr H.sub.2S, a H.sub.2S/WF.sub.6 ratio in the range 0.5 to 100, at a reactor pressure of 2 Torr and a temperature of 450° C. Following initial nucleation on the reactive layer 128 the partial pressures of the precursors may be increased.

[0189] WS.sub.2 may also be grown in an ALD or CVD process including the precursors W(CO).sub.6 and H.sub.2S or (C.sub.2H.sub.5).sub.2S at a temperature of about 550° C.

[0190] A second feature 150 of WSe.sub.2 may be grown in an ALD or CVD process including the precursors WF.sub.6 and H.sub.2Se, or the precursors WCl.sub.4, WCl.sub.5, WCl.sub.6, or WO.sub.2Cl.sub.2 and H.sub.2Se.

[0191] A second feature 150 of WTe.sub.2 may be grown in an ALD or CVD process including the precursors WF.sub.6 and H.sub.2Te, or the precursors WCl.sub.4, WCl.sub.5, WCl.sub.6, or WO.sub.2Cl.sub.2 and H.sub.2Te.

[0192] In some embodiments, a co-reagent in the example CVD and ALD processes, e.g. H.sub.2 (i.e. in molecular form), may also be introduced.

[0193] A second feature 150 may alternatively be formed by growing MoS.sub.2 on the first nanostructure 120 from the vapor phase precursors MoCl.sub.5 and H.sub.2S at a temperature in the range of 500-900° C.

[0194] MoS.sub.2 may also be grown in a CVD process including the precursors Mo(CO).sub.6 and H.sub.2S or (C.sub.2H.sub.5).sub.2S at a temperature in the range of 350-550° C.

[0195] A second feature 150 of MoSe.sub.2 may be grown in an ALD or CVD process including the precursors MoCl.sub.3, MoCl.sub.4, or MoCl.sub.5 and H.sub.2Se.

[0196] A second feature 150 of MoTe.sub.2 may be grown in an ALD or CVD process including the precursors MoCl.sub.3, MoCl.sub.4, or MoCl.sub.5 and H.sub.2Te.

[0197] More generally, a lateral single monolayer growth of these TMDC materials may be achieved by controlling the temperature (e.g. the reactor susceptor temperature and/or the ambient reactor temperature), and/or the partial pressure of the transition metal source precursor, and/or the partial pressure of the chalcogenide precursor, and/or the partial pressure of co-reagents of the deposition process. For instance, by limiting the partial pressure(s) to obtain a comparably low deposition rate the precursor(s) may initially react with the reactive layer 128 (and not the upper surface 122 of the first nanostructure 120) and subsequently with the crystal edges of the deposited second TMDC material (and not with the basal plane formed by the second TMDC material). Partial pressures/deposition rates of the precursors and process temperatures may be determined by trial-and-error by performing deposition at different deposition rates and monitoring whether growth occurs on the basal plane of the second TMDC material.

[0198] After the second nanostructure 150 has been formed, the mask 130 may be removed by etching. A mask 130 of SiO.sub.2 may be removed using an HF-based etchant. FIG. 1M and FIG. 1N illustrates the process at a stage subsequent to the removal of the mask 130. A device 100 including the hetero-stack of the first nanostructure 120 of the first TMDC material and the second nanostructure 150 of the second TMDC material has been formed. The first portion of the first nanostructure 120 previously covered by the mask 130, and the protruding second portion of the second nanostructure 120 form protruding portions of the hetero-stack, on opposite sides of the overlapping region 160.

[0199] As may be seen in FIG. 1N the reactive layer 128 is still present on the portions of the side surfaces 125, 126, 127 of the first nanostructure 120 which were not covered by the mask 130. In this state, the reactive layer 128 may be referred to as a spacer layer 128. By virtue of being bonded to the side surfaces 125, 126, 127 of the first nanostructure 120 the spacer layer 128 may still provide the function of passivating the crystal edges of the first nanostructure 120 as discussed above. An upper edge of the spacer layer 128 is flush with the upper surface of the first nanostructure 120. If the reactive layer/spacer layer 128 is formed by a monolayer of molecules, the tail groups of the molecules of the monolayer of molecules at the upper edge are bonded to the second nanostructure 150.

[0200] FIG. 1O and FIG. 1P illustrates the device 100 with a gate stack including a gate conductor 170 and a gate dielectric 172 formed above the overlapping region 160. The gate conductor 170 may be formed by a conducting layer of a metal or highly doped silicon, or by a stack of conducting layers. The gate dielectric 172 may be formed by an oxide layer such as SiO.sub.2. The gate dielectric 172 may also be formed by a high-K dielectric such as Al.sub.2O.sub.3, ZrO.sub.2, or HfO.sub.2.

[0201] An electrode 174 which may be used as a source/drain electrode in a device is formed in contact with the exposed end portion of the first nanostructure 120. Likewise, an electrode 176 which may be as a drain/source electrode is formed in contact with the protruding portion of the second nanostructure 120.

[0202] In use of the device 100, charge carriers may be enter/leave the first nanostructure 120 via the electrode 174. Charge carriers may tunnel between the first nanostructure 120 and the second nanostructure 150 via the interface in the overlapping region 160. Charge carriers may enter/leave the second nanostructure 120 via the electrode 176. The tunneling current may be controlled by controlling a voltage applied to the overlapping region 160b via the gate stack.

[0203] Different manners of providing the substrate 110 with the first nanostructure 120 are possible. The first nanostructure 120 may be formed in accordance with state of the art techniques including exfoliation from a bulk crystal of the first TMDC material and thereafter be arranged on the substrate 110 by a transfer process. The first nanostructure 120 may also be formed in accordance with start of the art techniques of growing, for instance by molecular beam epitaxy (MBE), a layer of the first TMDC material of a desired thickness on the substrate 110 and thereafter form the first nanostructure 120 by patterning of the layer of the first TMDC material.

[0204] A further method for forming the first nanostructure 120 will now be described with reference to FIGS. 2A through 2C. A sacrificial material layer 106 is formed on the buffer sub-layer 114 of the substrate 110. The sacrificial material layer 116 is patterned to form a nanostructure of the sacrificial material 118 which is shown in FIG. 2B. The feature 118 may be formed by patterning the sacrificial material layer 116 using a lithography and etching process. The nanostructure 118 is formed with dimensions corresponding to the desired dimensions of the finished first nanostructure 120.

[0205] Subsequent to the forming of the nanostructure 118, a deposition process is performed. The deposition process, which will be disclosed in greater detail below, includes subjecting the substrate 110 and the nanostructure 118 to one or more precursors, as schematically indicated by the reference sign P in FIG. 1B. It should be noted this deposition process is different from the deposition process used for depositing the second TMDC material described above. During the deposition process the nanostructure 118 of the sacrificial material is removed from the substrate 110 by forming a volatile reaction product with a precursor of the deposition process. Thereby, the nanostructure 118 of the sacrificial material is replaced by the first TMDC material which is selectively deposited on the surface portion of the substrate 100 which, prior to the deposition process P, was covered by the nanostructure 118 of the sacrificial material.

[0206] FIG. 2C shows the result of the deposition process P wherein the nanostructure 118 of the sacrificial material has been replaced by the nanostructure 118 of the first TMDC material.

[0207] The sacrificial material forming the nanostructure 118 includes a sacrificial element which acts as a co-reagent with a precursor of the deposition process P. The sacrificial element may function as a reducing agent in the reaction with the precursor. However depending on the type of sacrificial element and precursor it is in principle also possible that the sacrificial element functions as an oxidation agent with the precursor, or forms a co-reagent in a ligand exchange reaction.

[0208] Since the deposition process P is such that the formation of the first TMDC material on the substrate 110 involves a reaction between the sacrificial element and the precursor of the deposition process P becomes “self-limiting”. In other words, when the nanostructure 118 of the sacrificial material has been removed by reacting with the precursor the formation of the first nanostructure 120 will stop. As a result, the first nanostructure 110 may be formed with dimensions which substantially correspond with the original dimensions of the nanostructure 118. The dimensions of the nanostructure 118 may hence be “transferred” to the feature 110. For instance, a nanostructure 118 having a thickness of 1-10 monolayers of the sacrificial material may be used to form the first nanostructure 120 in the first TMDC material with a corresponding thickness.

[0209] A buffer layer 114 formed by a layer of Al.sub.2O.sub.3, a layer of SiO.sub.2, a layer of Si.sub.3N.sub.4, may be inert to the precursors of the deposition process P and protect the underlying sub-layers.

[0210] The deposition process P may include exposing the substrate 100 with the nanostructure 118 formed thereon to a first precursor including a transition metal source/element and a second precursor including a chalcogen source/element.

[0211] The first precursor may include a compound of a transition metal element and a fluoride or chloride. The second precursor may include a compound of a chalcogen element and hydrogen H.sub.2. The sacrificial material may be formed by Si, Al, Ti, TiN, Hf, Sn, Zr, or Ta. Each of these materials have the ability to form a volatile reaction product with chloride- or fluoride-based precursors. The sacrificial material may be an amorphous or crystalline material. The deposition process may be a CVD process or an ALD process.

[0212] A first nanostructure 120 of WS.sub.2 may be formed by subjecting a nanostructure 118 formed by Si, Al, Ti, TiN, or Hf to a first precursor compound WF.sub.6 and a second precursor compound H.sub.2S. In the case of a sacrificial material formed by Si, the WS.sub.2 material is formed in a two-stage reaction process:

2 WF.sub.6.sup.(g)+3 Si.sup.(s)−>2 W.sup.(s)+3 SiF.sub.4.sup.(g)   (1)

W.sup.(s)+2 H.sub.2S.sup.(g)−>WS.sub.2.sup.(s)+2 H.sub.2.sup.(g)   (2)

[0213] The reaction process may be described in a corresponding manner in the case of a sacrificial material formed by Al, Ti, TiN, or Hf (i.e. by replacing the occurrences of Si in the reaction formulas with Al, Ti, TiN, or Hf). In any case the deposition may be performed at a temperature approximately falling in the range 400-450° C. (e.g. by controlling the susceptor temperature and/or the ambient reactor temperature). Prior to the deposition, the surface of the Si material may be H-passivated.

[0214] A first nanostructure 120 of WS.sub.2 may also be formed by subjecting a nanostructure 118 formed by Sn, Ti, Zr, Hf, Al, or Ta to a first precursor compound of WCl.sub.4, WCl.sub.5, WCl.sub.6, or WO.sub.2Cl.sub.2 and to a second precursor compound H.sub.2S.

[0215] A first nanostructure 120 of WSe.sub.2 may be formed by subjecting a nanostructure 118 formed by Si, Al, Ti, TiN, or Hf to a first precursor compound of WF.sub.6 and a second precursor compound of H.sub.2Se.

[0216] A first nanostructure 120 of WSe.sub.2 may also be formed by subjecting a nanostructure 118 formed by Sn, Ti, Zr, Hf, Al, or Ta to a first precursor compound of WCl.sub.4, WCl.sub.5, WCl.sub.6, or WO.sub.2Cl.sub.2 and a second precursor compound of H.sub.2Se.

[0217] A first nanostructure 120 of WTe.sub.2 may be formed by subjecting a nanostructure 118 formed by Si, Al, Ti, TiN, or Hf to a first precursor compound of WF.sub.6 and a second precursor compound of H.sub.2Te.

[0218] A first nanostructure 120 of WTe.sub.2 may also be formed by subjecting a nanostructure 118 formed by Sn, Ti, Zr, Hf, Al, or Ta to a first precursor compound of WCl.sub.4, WCl.sub.5, WCl.sub.6, or WO.sub.2Cl.sub.2 and a second precursor compound of H.sub.2Te.

[0219] A first nanostructure 120 of MoS.sub.2 may be formed by subjecting a nanostructure 118 formed by Sn, Ti, Zr, Hf, Al, or Ta to a first precursor compound of MoCl.sub.3, MoCl.sub.4, or MoCl.sub.5 and to a second precursor compound H.sub.2S.

[0220] A first nanostructure 120 of MoSe.sub.2 may be formed by subjecting a nanostructure 118 formed by Sn, Ti, Zr, Hf, Al, or Ta to a first precursor compound of MoCl.sub.3, MoCl.sub.4, or MoCl.sub.5 and to a second precursor compound H.sub.2Se.

[0221] A first nanostructure 120 of MoTe.sub.2 may be formed by subjecting a nanostructure 118 formed by Sn, Ti, Zr, Hf, Al, or Ta to a first precursor compound of MoCl.sub.3, MoCl.sub.4, or MoCl.sub.5 and to a second precursor compound H.sub.2Te.

[0222] In the above, methods and devices have been described mainly with reference to a limited number of examples. However, as is readily appreciated by a person skilled in the art, other examples than the ones disclosed above are equally possible within the scope of the disclosure, as defined by the appended claims. For instance, if a “staggered” hetero-stack not is desirable, the dielectric layer 140 may be formed with a thickness exceeding the level of the upper surface 122 of first nanostructure 120. Outward lateral growth of the second TMDC material may thereby be prevented while inward lateral growth may be allowed. Moreover, the mask 130 may even be omitted, wherein a vertical hetero-stack may be formed by laterally growing the second nanostructure 150 to completely cover the entire upper surface 122 of the first nanostructure 120.