POWER SEMICONDUCTOR MODULE

Abstract

A power semiconductor module includes a metal bottom plate, an insulating heat dissipation material layer, a chip, a binding plate, silica gel, and an outer housing, where the binding plate includes a copper plate and a copper strap. The copper plate is connected to the copper strap through welding, and the binding plate is configured to connect circuits of various components. The metal bottom plate is connected to the insulating heat dissipation material layer through tin soldering, the chip is connected to the insulating heat dissipation material layer through tin soldering, the chip is connected to the copper strap, and the copper strap is connected to the insulating heat dissipation material layer. The module can resolve the prior-art problem of mechanical stress generated on the chip in the case of a temperature change when a relatively thick copper frame is applied to the packaging of the power semiconductor module.

Claims

1. A power semiconductor module, comprising a metal bottom plate, an insulating heat dissipation material layer, a chip, a binding plate, silica gel, and an outer housing, wherein the binding plate comprises a copper plate and a copper strap, the copper plate is connected to the copper strap through welding, the binding plate is configured to connect circuits of various components, the metal bottom plate is connected to the insulating heat dissipation material layer through a tin soldering, the chip is connected to the insulating heat dissipation material layer through the tin soldering, the chip is connected to the copper strap, and the copper strap is connected to the insulating heat dissipation material layer.

2. The power semiconductor module according to claim 1, wherein the outer housing is connected to the metal bottom plate by using a dispensing process.

3. The power semiconductor module according to claim 1, wherein the silica gel fills the outer housing to prevent corrosion and moisture, protect an internal circuit, and isolate internal components with a high voltage.

4. The power semiconductor module according to claim 1, wherein the copper plate is connected to the copper strap through a laser welding and a ultrasonic welding.

5. The power semiconductor module according to claim 4, wherein the chip is connected to the copper strap through a welding or a sintering, and the copper strap is connected to the insulating heat dissipation material layer through the welding or the sintering.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0011] FIG. 1 is a schematic diagram of an overall structure of a power semiconductor module according to an embodiment of the present disclosure;

[0012] FIG. 2 is a schematic diagram of an overall structure of a power semiconductor module with a copper frame;

[0013] FIG. 3 is a schematic diagram of a power semiconductor module with a copper frame;

[0014] FIG. 4 is a first schematic diagram of a partial structure of a power semiconductor module according to an embodiment of the present disclosure;

[0015] FIG. 5 is a first schematic structural diagram of a binding plate according to an embodiment of the present disclosure;

[0016] FIG. 6 is a second schematic structural diagram of a binding plate according to an embodiment of the present disclosure;

[0017] FIG. 7 is a second schematic diagram of a partial structure of a power semiconductor module according to an embodiment of the present disclosure; and

[0018] FIG. 8 is a schematic structural diagram of a power semiconductor module according to Embodiment 4 of the present disclosure.

[0019] Reference numerals: 1: metal bottom plate; 2: insulating heat dissipation material layer; 3: chip; 4: binding plate; 5: silica gel; 6: outer housing; 7: copper plate; 8: copper strap.

DETAILED DESCRIPTION OF THE EMBODIMENTS

[0020] To make the objective, technical solutions, and advantages of the present disclosure clear, the present disclosure will be further described in detail below by referring to the accompanying drawings and specific embodiments.

Embodiment 1

[0021] As shown in FIG. 1, FIG. 4, and FIG. 5, the present disclosure provides a power semiconductor module, including metal bottom plate 1, insulating heat dissipation material layer 2, chip 3, binding plate 4, silica gel 5, and outer housing 6. The binding plate 4 includes copper plate 7 and copper strap 8. The copper plate 7 is connected to the copper strap 8 through welding, and the binding plate 4 is configured to connect circuits of various components. The metal bottom plate 1 is connected to the insulating heat dissipation material layer 2 through tin soldering. The chip 3 is connected to the insulating heat dissipation material layer 2 through tin soldering. The chip 3 is also connected to the copper strap 8, and the copper strap 8 is connected to the insulating heat dissipation material layer 2.

[0022] Further, the outer housing 6 is connected to the metal bottom plate 1 by using a dispensing process.

[0023] Further, the silica gel 5 fills the outer housing 6 to prevent corrosion and moisture, protect an internal circuit, and isolate internal components with a high voltage.

[0024] Further, the copper plate 7 is connected to the copper strap 8 through laser welding and ultrasonic welding.

[0025] Further, the chip 3 is connected to the copper strap 8 through welding or sintering, and the copper strap 8 is connected to the insulating heat dissipation material layer 2 through welding or sintering.

[0026] The thickness of the copper plate 7 ranges from 1 mm to 2 mm, and the thickness of the copper strap 8 ranges from 0.3 mm to 0.8 mm.

Embodiment 2

[0027] As shown in FIG. 1 and FIG. 6, the present disclosure provides a power semiconductor module, including metal bottom plate 1, insulating heat dissipation material layer 2, chip 3, binding plate 4, silica gel 5, and outer housing 6, where the binding plate 4 includes copper plate 7 and copper strap 8. The copper plate 7 is connected to the copper strap 8 through welding. The binding plate 4 is configured to connect circuits of various components. The metal bottom plate 1 is connected to the insulating heat dissipation material layer 2 through tin soldering. The chip 3 is connected to the insulating heat dissipation material layer 2 through tin soldering and, the chip 3 is connected to the copper strap 8, and the copper strap 8 is connected to the insulating heat dissipation material layer 2.

[0028] Further, the outer housing 6 is connected to the metal bottom plate 1 by using a dispensing process.

[0029] Further, the silica gel 5 fills the outer housing 6 to prevent corrosion and moisture, protect an internal circuit, and isolate internal components with a high voltage.

[0030] Further, the copper plate 7 is connected to the copper strap 8 through laser welding and ultrasonic welding.

[0031] Further, the chip 3 is connected to the copper strap 8 through welding or sintering, and the copper strap 8 is connected to the insulating heat dissipation material layer 2 through welding or sintering.

[0032] The thickness of the copper plate 7 ranges from 1 mm to 2 mm, and the thickness of the copper strap 8 ranges from 0.5 mm to 1 mm.

[0033] A contact surface between the copper strap 8 and the chip 3 is ground to eliminate a deviation, thereby increasing the contact area between the copper strap 8 and the chip 3. In addition, the thickness of the copper strap 8 on the contact surface between the copper strap 8 and the chip 3 is further reduced to reduce mechanical stress when the copper strap 8 is combined with the chip 3, thereby further improving reliability.

Embodiment 3

[0034] As shown in FIG. 1 and FIG. 7, the present disclosure provides a power semiconductor module, including metal bottom plate 1, insulating heat dissipation material layer 2, chip 3, binding plate 4, silica gel 5, and outer housing 6, where the binding plate 4 includes copper plate 7 and copper strap 8. The copper plate 7 is connected to the copper strap 8 through welding, and the binding plate 4 is configured to connect circuits of various components. The metal bottom plate 1 is connected to the insulating heat dissipation material layer 2 through tin soldering, the chip 3 is connected to the insulating heat dissipation material layer 2 through tin soldering, the chip 3 is connected to the copper strap 8, and the copper strap 8 is connected to the insulating heat dissipation material layer 2.

[0035] Further, the outer housing 6 is connected to the metal bottom plate 1 by using a dispensing process.

[0036] Further, the silica gel 5 fills the outer housing 6 to prevent corrosion and moisture, protect an internal circuit, and isolate internal components with a high voltage.

[0037] Further, the copper plate 7 is connected to the copper strap 8 through laser welding and ultrasonic welding.

[0038] Further, the chip 3 is connected to the copper strap 8 through welding or sintering, and the copper strap 8 is connected to the insulating heat dissipation material layer 2 through welding or sintering.

[0039] The thickness of the copper plate 7 ranges from 1 mm to 2 mm, and the thickness of the copper strap 8 ranges from 0.3 mm to 0.8 mm.

[0040] The copper plate 7 and a main electrode terminal form an integrated structure.

[0041] In FIG. 4, the copper plate 7 is separated from an electrode terminal for connecting an external circuit, which generates additional resistance and parasitic inductance. In this embodiment, the copper plate 7 and the main electrode terminal form the integrated structure, thereby further reducing the resistance and parasitic inductance.

Embodiment 4

[0042] As shown in FIG. 8, the present disclosure provides a power semiconductor module, including metal bottom plate 1, insulating heat dissipation material layer 2, chip 3, and binding plate 4. The binding plate 4 includes copper plate 7 and copper strap 8, and the copper plate 7 is connected to the copper strap 8 through welding. The binding plate 4 is configured to connect circuits of various components. The metal bottom plate 1 is connected to the insulating heat dissipation material layer 2 through tin soldering, the chip 3 is connected to the insulating heat dissipation material layer 2 through tin soldering, the chip 3 is connected to the copper strap 8, and the copper strap 8 is connected to the insulating heat dissipation material layer 2.

[0043] Further, the copper plate 7 is connected to the copper strap 8 through laser welding and ultrasonic welding.

[0044] Further, the chip 3 is connected to the copper strap 8 through welding or sintering, and the copper strap 8 is connected to the insulating heat dissipation material layer 2 through welding or sintering.

[0045] The thickness of the copper plate 7 ranges from 1 mm to 2 mm, and the thickness of the copper strap 8 ranges from 0.3 mm to 0.8 mm.

[0046] The semiconductor module is plastically packaged using a resin material. Based on the shape and parameter design needs, a special die is used to fill the resin into the semiconductor module. The chip 3, the insulating heat dissipation material layer 2, and the binding plate 4 of the semiconductor module are packaged and fixed, for example, 5 and 6 in FIG. 1 are replaced by an integrated resin material. This integrated plastic packaging method does not require silica gel or an outer housing, thereby simplifying the production process and achieving higher production efficiency and higher product reliability.

[0047] In conclusion, in the power semiconductor module in the present disclosure, the copper strap in contact with the chip generates small mechanical stress on the chip when a temperature change occurs on the copper strap so it does not break or damage the chip. Most of the current of the circuit passes through the relatively thick copper plate, which greatly reduces turn-on resistance and parasitic inductance. In addition, the position deviation of the chip can be compensated for by adjusting the position of the copper strap, thus lowering the requirement for a positioning process. This simplifies the processing technology and improves the yield of the product.

[0048] The above description describes merely preferred embodiments of the present disclosure and is not intended to limit the present disclosure, and various changes and modifications of the present disclosure may be made by those skilled in the art. Any modification, equivalent substitution, and improvement made within the spirit and principle of the present disclosure should fall within the protection scope of the claims of the present disclosure.