Semiconductor device having overlapped via apertures

Abstract

Disclosed is a semiconductor device having overlapped via apertures formed in an encapsulant to outwardly expose solder balls. When different types of semiconductor devices are electrically connected to the solder balls through the overlapped via apertures, flux or solder paste is unlikely to contact sidewall portions of the overlapped via apertures. Therefore, different types of semiconductor devices can be mounted with improved efficiency.

Claims

1. An assembly comprising: a substrate comprising a first surface; a semiconductor die coupled to the first surface of the substrate; an encapsulant covering the first surface of the substrate and at least a first surface of the semiconductor die, the encapsulant comprising: a first encapsulant surface facing the substrate; and a second encapsulant surface opposite the first encapsulant surface; a plurality of solder balls coupled to the first surface of the substrate; and a plurality of overlapped via apertures in the encapsulant, each of which exposing a respective one of the plurality of solder balls, wherein the encapsulant comprises a central protrusion completely surrounded by the overlapped via apertures.

2. The assembly of claim 1, wherein the central protrusion comprises a plurality of vertices, each of which pointing between two adjacent ones of the solder balls.

3. The assembly of claim 2, wherein each of the plurality of vertices is located at a point of intersection between two adjacent sides of the plurality of sides of the central protrusion and a top end of the central protrusion.

4. The assembly of claim 1, wherein each pair of the overlapped via apertures are separated by a sidewall portion of the encapsulant that extends directly between the central protrusion and a second central protrusion that is identical to the central protrusion, the sidewall portion having a height different from a height of the central protrusion.

5. The assembly of claim 4, wherein directly between respective centers of the central protrusion and the second central protrusion, the height of the sidewall portion dips toward the substrate.

6. The assembly of claim 1, wherein second encapsulant surface is separated from the first encapsulant surface by an encapsulant thickness, and the central protrusion comprises a protrusion thickness equal to the encapsulant thickness.

7. An assembly comprising: a substrate comprising a first surface; a semiconductor die coupled to the first surface of the substrate; an encapsulant covering the first surface of the substrate and at least a first surface of the semiconductor die, the encapsulant comprising: a first encapsulant surface facing the substrate; and a second encapsulant surface opposite the first encapsulant surface and separated from the first encapsulant surface by an encapsulant thickness; a plurality of solder balls coupled to the first surface of the substrate; and a plurality of overlapped via apertures in the encapsulant, each of which exposing a respective one of the plurality of solder balls, wherein the encapsulant comprises a central protrusion completely surrounded by the overlapped via apertures and having a protrusion thickness equal to the encapsulant thickness, the central protrusion comprising: a plurality of sides, each of which facing a respective one of the solder balls; and a plurality of vertices, each of which pointing between two adjacent ones of the solder balls.

8. The assembly of claim 7, wherein each of the plurality of vertices is located at a point of intersection between two adjacent sides of the plurality of sides of the central protrusion and a top end of the central protrusion.

9. The assembly of claim 7, wherein each pair of the overlapped via apertures are separated by a sidewall portion of the encapsulant that extends directly between the central protrusion and a second central protrusion that is identical to the central protrusion, the sidewall portion having a height different from a height of the central protrusion.

10. The assembly of claim 9, wherein directly between respective centers of the central protrusion and the second central protrusion, the height of the sidewall portion dips toward the substrate.

11. The assembly of claim 7, wherein the central protrusion comprises a flat surface facing away from the substrate.

12. The assembly of claim 11, wherein the flat surface of the central protrusion facing away from the substrate is co-planar with the second encapsulant surface.

13. An assembly comprising: a substrate comprising a first surface; a semiconductor die coupled to the first surface of the substrate; an encapsulant covering the first surface of the substrate and at least a first surface of the semiconductor die, the encapsulant comprising: a first encapsulant surface facing the substrate; and a second encapsulant surface opposite the first encapsulant surface; a plurality of solder balls coupled to the first surface of the substrate; and a plurality of overlapped via apertures in the encapsulant, each of which exposing a respective one of the plurality of solder balls, wherein the encapsulant comprises a central protrusion completely surrounded by the overlapped via apertures, the central protrusion comprising: a plurality of sides, each of which facing a respective one of the solder balls; and a plurality of vertices, each of which pointing between two adjacent ones of the solder balls.

14. The assembly of claim 13, wherein each of the plurality of sides of the central protrusion is curved inward toward a center of the central protrusion.

15. The assembly of claim 13, wherein each of the plurality of vertices is located at a point of intersection between two adjacent sides of the plurality of sides of the central protrusion and a top surface of the central protrusion, where the top surface of the central protrusion is coplanar with the second encapsulant surface.

16. The assembly of claim 13, wherein each of the plurality of vertices is located at a point of intersection between two adjacent sides of the plurality of sides of the central protrusion and a top end of the central protrusion.

17. The assembly of claim 13, wherein each pair of the overlapped via apertures are separated by a sidewall portion of the encapsulant that extends directly between the central protrusion and a second central protrusion identical to the central protrusion, the sidewall portion having a height different from a height of the central protrusion.

18. The assembly of claim 17, wherein directly between respective centers of the central protrusion and the second central protrusion, the height of the sidewall portion dips toward the substrate.

19. The assembly of claim 13, wherein the central protrusion comprises a flat surface facing away from the substrate.

20. The assembly of claim 19, wherein the flat surface of the central protrusion facing away from the substrate is co-planar with the second encapsulant surface.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1A is a cross-sectional view of a semiconductor device according to an embodiment;

(2) FIG. 1B is an enlarged cross-sectional view of a portion 1B of the semiconductor device of FIG. 1A;

(3) FIG. 2A is a top plan view of the semiconductor device of FIG. 1A according to an embodiment;

(4) FIG. 2B is an enlarged top plan view of a portion 2B of the semiconductor package of FIG. 2A;

(5) FIG. 3 is a cross-sectional view of a package-on-package using the semiconductor device according to an embodiment;

(6) FIGS. 4A, 4B, 4C, 4D are cross-sectional views illustrating a method of manufacturing a semiconductor device according to another embodiment; and

(7) FIG. 5 is a cross-sectional view illustrating a state in which the semiconductor device of FIG. 1A is connected to another semiconductor device according to another embodiment.

(8) Common reference numerals are used throughout the drawings and the detailed description to indicate the same or similar elements.

DETAILED DESCRIPTION

(9) As an overview and in accordance with one embodiment, referring to FIGS. 1A, 1B, 2A, 2B, a semiconductor device 100 includes overlapped via apertures 151 formed in an encapsulant 150 to outwardly expose solder balls 140. Referring now to FIG. 5, when different types of semiconductor devices 201 are electrically connected to the solder balls 140 through the overlapped via apertures 151, flux or solder paste 203 is unlikely to contact sidewall portions 151b of the overlapped via apertures 151. Therefore, different types of semiconductor devices 201 can be mounted with improved efficiency.

(10) Now in more detail, FIG. 1A is a cross-sectional view of a semiconductor device 100 according to an embodiment. FIG. 1B is an enlarged cross-sectional view of a portion 1B of the semiconductor device 100 of FIG. 1A.

(11) As illustrated in FIGS. 1A and 1B, the semiconductor device 100, sometimes called an assembly, includes a printed circuit board 110, a semiconductor die 120, a plurality of conductive bumps 130, a plurality of first solder balls 140, an encapsulant 150, and a plurality of second solder balls 160.

(12) The printed circuit board 110, sometimes called a substrate, includes an insulation layer 111, a first circuit pattern 112, a first solder mask 113, a second circuit pattern 114, a second solder mask 115, and conductive vias 116. The insulation layer 111 has a substantially planar first surface 111a, and a substantially planar second surface 111b opposite to the first surface 111a. In addition, the insulation layer 111 may be made of a rigid or flexible material, but is not limited thereto.

(13) The first circuit pattern 112 is formed on the first surface 111a of the insulation layer 111, and may be generally formed of a copper pattern. The first solder mask 113 covers the first circuit pattern 112 and the first surface 111a around the first circuit pattern 112. However, the first solder mask 113 is not formed on a predetermined area, e.g., on bond fingers and/or terminals, of the first circuit pattern 112 requiring an electrical connection. For example, the first solder mask 113 is not formed at an area of the first circuit pattern 112, where the conductive bumps 130 and the first solder balls 140 are connected to the first circuit pattern 112, which will later be described.

(14) The second circuit pattern 114 is formed on the second surface 111b of the insulation layer 111, and is generally formed of a copper pattern. The second solder mask 115 covers the second circuit pattern 114 and the second surface 111b around the second circuit pattern 114. However, the second solder mask 115 is not formed at a predetermined area, e.g., terminals, of the second circuit pattern 114 requiring an electrical connection. For example, the second solder mask 115 is not formed at an area, e.g., terminals, of the second circuit pattern 114 connected to the second solder balls 160, which will later be described.

(15) The semiconductor die 120 is positioned on the printed circuit board 110. In addition, the semiconductor die 120 includes a plurality of bond pads 121 that face toward the printed circuit board 110. The semiconductor die 120 may be a general memory semiconductor, a logic semiconductor, or the like, but is not limited thereto. A width of the semiconductor die 120 is generally smaller than the width of the printed circuit board 110.

(16) The conductive bumps 130 are formed between the printed circuit board 110 and the semiconductor die 120 to electrically connect the printed circuit board 110 and the semiconductor die 120 to each other. That is to say, the conductive bumps 130 electrically connect the bond pad 121 of the semiconductor die 120 to the first circuit pattern 112, e.g., bond fingers thereof, of the printed circuit board 110. The conductive bumps 130 may be made of any one selected from gold (Au), silver (Ag), solder, and equivalents thereof, but are not limited thereto.

(17) The first solder balls 140 are electrically connected to the first circuit pattern 112, e.g., terminals thereof, of the printed circuit board 110. That is to say, the first solder balls 140 are electrically connected to the first circuit pattern 112 formed at the outer periphery of the semiconductor die 120. In addition, the first solder balls 140 may be made of any one selected from tin-lead (Sn—Pb), tin-lead-silver (Sn—Pb—Ag), tin-lead-bismuth (Sn—Pb—Bi), tin-copper (Sn—Cu), tin-silver (Sn—Ag), tin-bismuth (Sn—Bi), tin-silver-copper (Sn—Ag—Cu), tin-silver-bismuth (Sn—Ag—Bi), tin-zinc (Sn—Zn), and equivalents thereof, but are not limited thereto.

(18) The encapsulant 150 covers the semiconductor die 120 mounted on the printed circuit board 110 and the conductive bumps 130, thereby, protecting the same from the outside environments. The encapsulant 150 also covers lower regions of the first solder balls 140.

(19) Meanwhile, overlapped via apertures 151 are formed in the encapsulant 150 to allow the plurality of first solder balls 140 to be exposed outwardly together. In an exemplary embodiment, the overlapped via apertures 151 formed in the encapsulant 150 expose the plurality of first solder balls 140 upwardly together.

(20) In more detail, the overlapped via aperture 151 is defined by a bottom portion 151a of the encapsulant 150. Accordingly, the overlapped via aperture 151 is sometimes said to have a bottom portion 151a. The bottom portion 151a covers the first solder ball 140 and is generally shaped as an annulus.

(21) The overlapped via aperture 151 is further defined by a sidewall portion 151b of the encapsulant 150. Accordingly, the overlapped via aperture 151 is sometimes said to have a sidewall portion 151b. The sidewall portion 151b is separated from the plurality of first solder balls 140 and upwardly extends from the bottom portion 151a to a top portion 150f of the encapsulant 150. A first protrusion 151e of the encapsulant 150 is formed substantially in the middle of (between) adjacent bottom portions 151a and protrudes upwards from the bottom portions 151a.

(22) The bottom portions 151a are formed to be substantially planar and cover lower portions of the first solder balls 140, as described above. In addition, the sidewall portions 151b are formed at an angle in a range of approximately 70° to approximately 90° with respect to the bottom portions 151a and are spaced a predetermined distance apart from the first solder balls 140. In addition, the first protrusion 151e is formed at the center between each of the bottom portion 151a and/or the center between each of the plurality of first solder balls 140.

(23) A thickness of the first protrusion 151e is smaller than that of the encapsulant 150. In practice, the thickness of the first protrusion 151e may be smaller than a diameter of the first solder balls 140. In one embodiment, the height of a top end 151g of the first protrusion 151e above the printed circuit board 110 may be lower than the height of the center of the first solder balls 140 above the printed circuit board 110.

(24) However, in other embodiments, the height of the top end 151g of the first protrusion 151e above the printed circuit board 110 may be lower than, equal to, or greater than, the height of the first solder balls 140 above the printed circuit board 110. Generally, the greater the overlap between overlapped via aperture 151, the lower the height of top end 151g of the first protrusion 151e above the printed circuit board 110.

(25) A width of the overlapped via aperture 151 is greater than a pitch between the first solder balls 140. The pitch is the center to center spacing between adjacent first solder balls 140. The width of the overlapped via apertures 151 is greater than the pitch of the first solder balls 140 such the overlapped via apertures 151 overlap each other. A second protrusion 152 is formed inward of the first protrusions 151e, which will further be described below.

(26) The second solder balls 160 are electrically connected to the second circuit pattern 114 of the printed circuit board 110. The second solder balls 160 are to be later mounted on an external device (not shown) such as a larger circuit board. Therefore, the second solder balls 160 practically electrically connect the semiconductor device 100 to the external device while mechanically fixing the semiconductor device 100 to the external device.

(27) FIG. 2A is a top plan view of the semiconductor device 100 of FIG. 1A according to an embodiment. FIG. 2B is an enlarged top plan view of a portion 2B of the semiconductor device 100 of FIG. 2A. As illustrated in FIGS. 2A and 2B, a plurality of overlapped via apertures 151 collectively shaped as a substantially square dual-stacked line are formed in the encapsulant 150. In addition, a plurality of first solder balls 140 are outwardly exposed together through the overlapped via apertures 151. In the illustrated embodiment, the overlapped via apertures 151 collectively have a substantially square, two lined shape.

(28) In alternative embodiments, however, overlapped via apertures 151 collectively have a substantially square shape of two or more lines, or have several disconnected overlapped via apertures. That is to say, the shapes of the overlapped via apertures 151 are not limited to that illustrated in the exemplary embodiment.

(29) The overlapped via apertures 151 outwardly exposing the plurality of first solder balls 140 together according to the illustrated embodiment will now be described in detail. Generally, each overlapped via aperture 151 is defined by an imaginary circle 155 in the plane of top portion 150f of encapsulant 150. The imaginary circles 155 of adjacent overlapped via apertures 151 overlap each other such that the sidewall portions 151b and sides 152a, which lie upon the imaginary circle 155, of the overlapped via apertures 151 are separated from one another.

(30) Where two imaginary circles 155 overlap each other, the first protrusion 151e is formed. At a central area defined by four imaginary circles 155, the second protrusion 152 is formed. The second protrusion 152 is a portion of the encapsulant 150 that was not removed during formation of overlapped via apertures 151, but is surrounded by the overlapped via apertures 151.

(31) The overlapped via apertures 151 have the sidewall portions 151b each having a substantially arc-shaped curve 151c partially corresponding to the circumference of each of the first solder balls 140. The arc-shaped curve 151c is a portion of the imaginary circle 155.

(32) The arc-shaped curves 151c and imaginary circles 155 overlap each other, forming overlapped areas 151d. Each of the first solder balls 140 is positioned within the arc-shaped curve 151c and imaginary circle 155. In addition, a predetermined area of the bottom portion 151a, extending from the first solder balls 140 to the sidewall portion 151b, is exposed.

(33) The first protrusion 151e is formed at the overlapped area 151d between one of the first solder balls 140 and the other adjacent to the one of the first solder balls 140, i.e., between adjacent solder balls 140. That is to say, the first protrusion 151e having a height smaller than the encapsulant 150 is formed in each of the overlapped areas 151d.

(34) A second protrusion 152, sometimes called a central protrusion 152, having a predetermined thickness is formed at the center of an area formed by, for example, four of the first solder balls 140. The thickness of the second protrusion 152 is the same as that of the encapsulant 150, i.e., a top end 152f of the second protrusion 152 is parallel to and coplanar with the top portion 150f of the encapsulant 150.

(35) The second protrusion 152 may be shaped of a diamond or rhombus having a plurality of sides 152a. In addition, centers of the respective sides 152a of the second protrusion 152 are recessed or bent, i.e., curved, toward of the center of the second protrusion 152. The center of the respective sides 152a of the second protrusion 152 face the center of the first solder balls 140 corresponding thereto. In addition, the second protrusion 152 has four vertices 152b, which face between the center of two, for example, of the first solder balls 140. Further, each of the vertices 152b of the second protrusion 152 faces the overlapped area 151d of the arc-shaped curve 151c and the first protrusion 151e formed in the overlapped area 151d.

(36) FIG. 3 is a cross-sectional view of a package-on-package 200 using the semiconductor device 100 according to an embodiment. As illustrated in FIG. 3, a semiconductor device 201 is mounted on the semiconductor device 100, thereby achieving the package-on-package 200, sometimes called an assembly. Here, the semiconductor device 201 different from the semiconductor device 100 may be a memory semiconductor, a logic semiconductor, and equivalents thereof, but is not limited thereto. In an exemplary embodiment, if the semiconductor device 100 is a memory semiconductor, the semiconductor device 201 may be a logic semiconductor.

(37) The semiconductor device 201 according to the illustrated embodiment may also include solder balls 202, which are electrically connected to first solder balls 140 through the exposed overlapped via apertures 151. In practice, the solder balls 202 and the first solder balls 140 of different types of the semiconductor devices 100 and 201 are reflown, followed by cooling, thereby being electrically connected to each other as integral solder columns 204.

(38) FIGS. 4A, 4B, 4C, 4D are cross-sectional views illustrating a method of manufacturing a semiconductor device according to another embodiment. As illustrated in FIG. 4A, the semiconductor die 120 is attached to the printed circuit board 110 using the conductive bumps 130. In addition, a plurality of first solder balls 140 are also attached to the printed circuit board 110.

(39) The semiconductor die 120 having the conductive bumps 130 attached thereto is placed on the printed circuit board 110, e.g., to bond fingers of the first circuit pattern 112, to then perform a general reflow process to attach the semiconductor die 120 to the printed circuit board 110. In addition, the first solder balls 140 are placed on the printed circuit board 110, e.g., on terminals of the first circuit pattern 112, using flux to then perform a general reflow process to attach the first solder balls 140 to the printed circuit board 110.

(40) Here, a die attaching process may first be performed and a solder ball attaching process may then be performed, and vice versa. Alternatively, the die attaching process and the solder ball attaching process may be performed at the same time.

(41) As illustrated in FIG. 4B, the semiconductor die 120, the conductive bumps 130 and the first solder balls 140 are encapsulated using the encapsulant 150. In an exemplary embodiment, the semiconductor device shown in FIG. 4A is positioned inside a mold and the encapsulant 150 in a liquid phase is injected into the mold. Subsequently, if the encapsulant 150 injected into the mold is cured, the encapsulated semiconductor device 100 is taken out from the mold. After the encapsulation, a curing process may further be performed.

(42) As illustrated in FIG. 4C, a predetermined area of the encapsulant 150 corresponding to the plurality of first solder balls 140 is removed by a laser beam, e.g., using laser-ablation, thereby forming the overlapped via apertures 151. Here, the laser beam is supplied to a predetermined area of the encapsulant 150 corresponding to one first solder ball 140.

(43) Additionally, a width or area of the encapsulant 150 removed by the laser beam is greater than that of the one first solder ball 140. Therefore, if the laser beam is supplied to four first solder balls 140, like in an exemplary embodiment, the planar overlapped via apertures 151 according to the illustrated embodiment may have a first protrusion 151e having a thickness smaller than that of the encapsulant 150, and a second protrusion 152 having a thickness equal to that of the encapsulant 150.

(44) The first protrusion 151e is formed at a boundary area between one of the four first solder balls 140 (and a first overlapped via aperture 151) and the other adjacent to the one first solder ball 140 (and an adjacent second overlapped via aperture 151). The second protrusion 152 is formed at a central area formed by, for example, four first solder balls 140 (and four adjacent overlapped via apertures 151).

(45) Here, the overlapped via apertures 151 formed by the laser beam includes a substantially planar bottom portion 151a formed around the solder balls 140, a sidewall portion 151b separated from the solder balls 140, and a side 152a also separated from the solder balls 140. In addition, the laser beam makes the bottom portion 151a remain on the printed circuit board 110 to a predetermined thickness, thereby allowing the first solder balls 140 to be tightly interlocked with the bottom portion 151a.

(46) As illustrated in FIG. 4D, a plurality of second solder balls 160 are attached to the printed circuit board 110, e.g., to terminals of the second circuit pattern 114. In an exemplary embodiment, the second solder balls 160 are placed on the printed circuit board 110 using flux to then perform a general reflow process to attach the second solder balls 160 to the printed circuit board 110. In practice, since the semiconductor device shown in FIG. 4D is processed upside down, the printed circuit board 110 and the second solder balls 160 are not separated from each other due to a gravitational action.

(47) FIG. 5 is a cross-sectional view illustrating a state in which the semiconductor device 100 of FIG. 1A is connected to another semiconductor device 201 according to another embodiment to form the package-on-package 200. As illustrated in FIG. 5, the semiconductor device 201 may be electrically connected to the semiconductor device 100 according to one embodiment. Here, commonly used flux 203 or solder paste may be used as a connection medium.

(48) In the illustrated embodiment, an overlapped via aperture 151 having a relatively large width or area is formed on the semiconductor device 100. Thus, when solder balls 202 of another semiconductor device 201 are temporarily attached onto the semiconductor device 100 using, for example, flux 203, the flux 203 is unlikely to touch sidewall portions 151b of the overlapped via apertures 151.

(49) Therefore, during a reflow process, the first solder balls 140 formed in the semiconductor device 100 and the solder balls 202 formed in another semiconductor device 201 are uniformly melted and cooled, so that the semiconductor device 201 is not tilted. Since the overlying semiconductor device 201 is not tilted, a good package-on-package 200 can be obtained.

(50) Although specific embodiments were described herein, the scope of the invention is not limited to those specific embodiments. Numerous variations, whether explicitly given in the specification or not, such as differences in structure, dimension, and use of material, are possible. The scope of the invention is at least as broad as given by the following claims.