Method for Producing a Plurality of Semiconductor Chips and Semiconductor Chip

Abstract

A method for producing a plurality of semiconductor chips and a semiconductor chip are disclosed. The method includes applying a mask material on a growth surface of a growth substrate, wherein the growth surface includes sapphire, patterning the mask material into a multiply-connected mask layer by introducing openings into the mask material, wherein the growth surface is exposed at the bottom of at least some of the openings, applying a semiconductor layer sequence on the mask layer and on the growth surface and singulating at least the semiconductor layer sequence into the plurality of semiconductor chips, wherein each semiconductor chip includes lateral dimensions and the lateral dimensions are large compared to an average distance of the openings to the nearest opening.

Claims

1-13. (canceled)

14. A method for producing a plurality of semiconductor chips, the method comprising: applying a mask material on a growth surface of a growth substrate, wherein the growth surface comprises sapphire; patterning the mask material into a multiply-connected mask layer by introducing openings into the mask material, wherein the growth surface is exposed at a bottom of at least some of the openings; applying a semiconductor layer sequence on the mask layer and on the growth surface; and singulating at least the semiconductor layer sequence into the plurality of semiconductor chips, wherein each semiconductor chip comprises lateral dimensions and the lateral dimensions are large compared to an average distance of the openings to a nearest opening.

15. The method according to claim 14, wherein the semiconductor layer sequence, the mask layer and the growth substrate are severed multiple times during singulation.

16. The method according to claim 14, wherein the mask layer is at least partially removed prior to or after the singulation.

17. The method according to claim 14, wherein the growth substrate is removed from the semiconductor layer sequence prior to or after singulation.

18. The method according to claim 14, wherein the mask material contains a silicon oxide or consists of silicon oxide.

19. The method according to claim 14, wherein a distance between nearest openings is between at least 0.5 μm and at most 15 μm for at least some openings.

20. The method according to claim 14, wherein the openings are arranged at lattice points of a regular lattice within the bounds of manufacturing tolerances.

21. The method according to claim 14, wherein a maximum lateral opening dimension is between at least 0.3 μm and at most 2.0 μm for at least some of the openings.

22. The method according to claim 14, wherein a thickness of the mask layer is between at least 0.2 μm and 10 μm at most.

23. The method according to claim 14, wherein the semiconductor layer sequence is completely formed over the mask layer.

24. A semiconductor chip comprising: a growth substrate having a growth surface, wherein the growth surface comprises sapphire; a multiply-connected mask layer comprising openings, the openings completely penetrate the mask layer; and a semiconductor layer sequence, which, in regions of the openings, is at least in places in direct contact with the growth surface and at least in places in direct contact with the mask layer, wherein the semiconductor layer sequence completely disposed over the mask layer, and wherein the mask layer comprises a light-transmissive material, which comprises an optical refractive index for light which is smaller than a refractive index of the growth substrate and which is smaller than a refractive index of the semiconductor layer sequence.

25. The semiconductor chip according to claim 24, wherein the semiconductor layer sequence includes an active region configured to generate of light.

26. The semiconductor chip according to claim 24, wherein the mask layer includes four or more openings.

27. A method for producing a plurality of semiconductor chips, the method comprising: applying a mask material on a growth surface of a growth substrate, wherein the growth surface comprises sapphire; patterning the mask material into a multiply-connected mask layer by introducing openings into the mask material, wherein the growth surface is exposed at a bottom of at least some of the openings; applying a semiconductor layer sequence on the mask layer and on the growth surface; and singulating at least the semiconductor layer sequence into a plurality of semiconductor chips, wherein each semiconductor chip comprises lateral dimensions and the lateral dimensions are large compared to an average distance of the openings to a nearest opening, wherein a distance between nearest openings is between at least 0.5 μm and 15 μm at most for at least some openings.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Hereinafter, the method described herein as well as the semiconductor chip described herein will be explained in greater detail by means of exemplary embodiments in conjunction with the associated figures.

[0047] Method steps of a method described herein are explained in greater detail in FIGS. 1A, 1B, 1C, 1D, 2A, 2B, 2C, 3A, 3B, 3C, 4A, 4B and 4C.

[0048] Method steps of methods described herein as well as exemplary embodiments of semiconductor chips described herein are explained in greater detail in FIGS. 5A, 5B, 5C, 6A, 6B, 6C, 6D, 6E, 6F.

[0049] Like, similar or equivalent elements are provided with the same reference numerals throughout the figures. The figures and the dimensional relationship between the elements illustrated in the figures are not drawn to scale. Individual elements may rather be illustrated with an exaggerated size for a better illustration and/or for a better understanding.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

[0050] FIGS. 1A to 1D show schematic sectional illustrations of method steps of exemplary embodiments of methods for producing a plurality of semiconductor chips described herein.

[0051] First, a growth substrate 1 is provided for the method. The growth substrate 1 comprises a growth surface 1a (see FIG. 1B), which is formed with sapphire. For example, the growth substrate consists of sapphire to that end.

[0052] On the growth surface 1a of the growth substrate is applied a mask material 2, which can be formed with an oxide or a nitride, for example. In the present exemplary embodiment, the mask material 2 consists of a silicon oxide.

[0053] In a further method step, FIG. 1B, openings 22 are generated in the mask material 2. This is also explained in a schematic plan view in conjunction with FIGS. 1C and 1D. In a plan view, the openings 22 are completely surrounded by the mask material, so that the mask layer 21 is formed in a multiply-connected manner. The openings 22 have the shape of a truncated pyramid or a truncated cone, for example. The growth substrate 1 is exposed at the bottom 23 of preferably each opening 22, so that the sapphire growth surface 1a is exposed there.

[0054] Different configurations of the openings 22 and thus the mask layer 21 are explained in greater detail in conjunction with the schematic plan views of FIGS. 2A, 2B and 2C. The cross-section shown in FIG. 1B corresponds to a cross-section along line R1 in FIG. 2A, for example.

[0055] As can be seen from FIG. 2A, the openings comprise a circular edge in a plan view, wherein the openings are arranged to be laterally spaced from one another at a distance A at the lattice points of a regular lattice. In other words, the openings 22 are separate regions, which do not comprise any connection amongst one another in a plan view. For example, the distance between directly neighboring openings A is at least 0.5 μm and 15 μm at the most. The opening dimensions B and E of the openings in lateral directions can be between at least 0.3 μm and 2 μm at the most, for example.

[0056] The schematic plan views of FIGS. 2B and 2C illustrate further possible shapes for the edge of the openings 22 in the plan view. For example, the edges can be designed to be oval or elliptical (see FIG. 2B) or in the shape of a regular polygon, e.g., a regular hexagon (see FIG. 3C).

[0057] The configuration of the openings, the position thereof and the distance of the openings amongst one another are to be understood to be within the bounds of manufacturing tolerances. In other words, deviations from the shapes ideally illustrated in the figures may occur due to the manufacturing method.

[0058] Different options for arranging the openings 22 are explained in greater detail by means of FIGS. 3A to 3C. For example, the openings may be arranged at lattice points of a hexagonal lattice (see FIG. 3A) or a cubic lattice (see FIG. 4B). Furthermore, the openings may be subject to another regular pattern regarding the arrangement thereof, the lattices being spanned along the lateral extension directions R1, R2 by translation.

[0059] A growth of semiconductor material 30 in the openings 22 of the mask layer 21 is explained in greater detail in conjunction with the schematic sectional illustrations of FIGS. 4A to 4C. The sapphire growth substrate is of the growth substrate 1 is exposed at the bottom 23 of the openings 22. The material of the mask layer 21, i.e., the mask material 23, is selected such that a growth of the semiconductor material 30 for forming the semiconductor layer sequence 3 preferably grows on the growth surface is compared to the mask material 21.

[0060] A seeding through the semiconductor material 30 is thus effected in the region of the openings 22 first, at the bottom surface 23 thereof on the growth surface 1a. Upon continuation of the growth, openings 22 are filled with the semiconductor material 30 starting from the growth surface is (see FIG. 4C). Upon a further continued growth, the gaps between the individual growth regions of the semiconductor material 30 are closed and the semiconductor regions coalesce into the semiconductor layer sequence.

[0061] This is illustrated in conjunction with FIGS. 5A and 5C, for example.

[0062] It is shown there that the semiconductor layer sequence 3 is completely formed over the mask layer 21 and is grown to be a closed semiconductor layer sequence above the mask layer, which may comprise an active region 3A for generating electromagnetic radiation, in particular light.

[0063] It is illustrated in conjunction with FIG. 5C that an application of contact elements 31 on the semiconductor layer sequence 3 can be effected after the singulation, the contact elements contacting the semiconductor chip on the p and n side. In this embodiment of the semiconductor chip, the sapphire-containing growth substrate 1 remains in the semiconductor chip. The distance A between directly neighboring openings 22 is small compared to the lateral extension or dimension L of the semiconductor chip. In other words, a plurality of openings 22, which are filled with the semiconductor material of the semiconductor layer sequence 3, is located in the semiconductor chip. The mask layer 21 is arranged between the semiconductor layer sequence 3 and the growth substrate.

[0064] Another exemplary embodiment of a method described herein is explained in greater detail in conjunction with the schematic sectional illustrations of FIGS. 6A, 6B, 6C, 6D, 6E, and 6F. Just as well, in this method, first a growth substrate 1 with a sapphire-containing growth surface 1a is provided, on which a mask layer 21 having openings 22, which completely penetrate the mask layer, is applied. It is possible in this exemplary embodiment that the mask 21 is formed with a radiation-non-transmissive metal oxide or semiconductor oxide, metal nitride or semiconductor nitride. For example, the mask layer may consist of a silicon oxide or a silicon nitride.

[0065] Subsequently, the semiconductor layer sequence is generated in the openings 22 first, and beyond these openings after that (FIG. 6B).

[0066] In a next method step, the semiconductor layer sequence can be fastened on a carrier 4 with its surface facing away from the growth substrate 1, where this carrier may be a carrier which is formed with an electrically conductive material such as copper, doped germanium or doped silicon. Furthermore, the carrier 4 may be a connection carrier, e.g., a circuit board.

[0067] FIG. 6D illustrates that this combination of carrier 4, semiconductor layer sequence 3, mask layer 21 and growth substrate 1 is introduced into an etching bath 5, which is filled with an etching liquid 51. The mask material 21 is selectively dissolved in the etching liquid 51, see FIG. 6E. Since the mask material does not remain in the finished semiconductor chip in this exemplary embodiment of the method described herein, the mask material can be selected with regard to its selective etchability toward the material of the semiconductor layer sequence 3 as well as toward the growth substrate 1.

[0068] FIG. 6F shows the finished semiconductor chip after singulation. Recesses 6 are located in the region of the mask layer 21 and the semiconductor layer sequence 3 comprises a pattern on its side facing away from the carrier 4, through which a probability for a total reflection at the outer surface of light generated in the semiconductor chip is reduced, for example, so that the probability for the light exit is increased overall. The shape of the openings 22 in the mask material 2 sets the shape of the pattern at the outer surface of the semiconductor layer sequence 3, so that the shape for these structures of the semiconductor layer sequence is possible by the selection of the shape of the openings.

[0069] The invention is not limited to the exemplary embodiments by the description thereof. The invention rather includes each new feature as well as each combination of features, which particularly includes each combination of features in the claims, even though this features or this combination per se is not explicitly indicated in the claims or exemplary embodiments.