MICROWAVE ANNEAL TO IMPROVE CVD METAL GAP-FILL AND THROUGHPUT

Abstract

An integrated circuit is fabricated by chemical vapor deposition or atomic layer deposition of a metal film to metal film.

Claims

1. A method of forming metal conductors in an integrated circuit, comprising: forming an underlayer and forming a trench in said underlayer; depositing a metal film on said underlayer of a film thickness corresponding to a depth of said trench by performing a single deposition operation; and annealing said metal film with microwave radiation, wherein said microwave radiation is absorbed by said metal film to heat said metal film to a temperature sufficient to cause a resistivity of said metal film to decrease after the annealing and not cause the said metal film to melt.

2. The method of claim 1 wherein said annealing comprises increasing grain size in said metal film to at least nearly a width dimension of said trench.

3. The method of claim 1 wherein said annealing comprises reducing resistivity of said metal film to less than about 30 microOhm-cm.

4. The method of claim 1 wherein said film thickness equals said depth of said trench.

5. The method of claim 1 wherein said depositing a metal film on said underlayer comprises performing a chemical vapor deposition (CVD) operation.

6. The method of claim 5 wherein said CVD operation comprises exposing said metal film to an organic gas precursor of cobalt.

7. The method of claim 6 wherein said CVD operation comprises exposing said metal film to hydrogen.

8. The method of claim 1 wherein said microwave annealing heats said metal film to over 400 degrees C.

9. The method of claim 1 further comprising heating or cooling said underlayer through a workpiece support during said microwave annealing.

10. The method of claim 1 further comprising cooling said underlayer through a workpiece support during said microwave annealing.

11. The method of claim 7 further comprising cooling said underlayer to a temperature less than 400 degrees C. through a workpiece support during said microwave annealing.

12. A method of forming metal conductor, comprising: depositing a metal film on a substrate layer by performing a single deposition operation; and annealing said metal film with microwave radiation, wherein said microwave radiation is absorbed by said metal film to heat said metal film to a temperature sufficient to cause a resistivity of said metal film to decrease after the annealing and not cause the said metal film to melt.

13. The method of claim 12 wherein said annealing comprises reducing resistivity of said metal film to less than about 30 microOhm-cm.

14. The method of claim 12 wherein said depositing a metal film on said substrate layer comprises performing a chemical vapor deposition (CVD) operation.

15. The method of claim 14 wherein said CVD operation comprises exposing said metal film to an organic gas precursor of cobalt.

16. The method of claim 15 wherein said CVD operation comprises exposing said metal film to hydrogen.

17. The method of claim 12 wherein said microwave annealing heats said metal film to over 400 degrees C.

18. The method of claim 12 further comprising heating or cooling said underlayer through a workpiece support during said microwave annealing.

19. The method of claim 12 further comprising cooling said underlayer to a temperature less than 400 degrees C. through a workpiece support during said microwave annealing.

20. A method of forming metal conductors in an integrated circuit, comprising: forming an underlayer; depositing a metal film on said underlayer by performing atomic layer deposition; and annealing said metal film with microwave radiation, wherein said microwave radiation is absorbed by said metal film to heat said metal film to a temperature sufficient to cause a resistivity of said metal film to decrease after the annealing and not cause the said metal film to melt.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0024] So that the manner in which the above recited embodiments of the invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.

[0025] FIG. 1 is a block flow diagram of a process in accordance with one embodiment.

[0026] FIG. 2 is a simplified cross-sectional view of a structure formed in the process of FIG. 1.

[0027] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. The drawings in the figures are all schematic and not to scale.

DETAILED DESCRIPTION

[0028] According to one embodiment, microwave anneal is performed to replace the cyclic plasma treatments and thermal annealing required in conventional processes. This change dramatically improves the production throughput by a factor of 2-5, while providing low resistivity interconnects meeting or exceeding the performance of conventionally fabricated interconnects. The microwave anneal efficiently drives out film impurities in the metal film and boosts gap fill performance. This eliminates the need for deposition of successive thin layers of metal. Instead, a single CVD or ALD process is performed in which the final thickness is deposited in a single operation. The microwave anneal thoroughly removes imperfections in the metal layer quickly. Unlike the conventional pedestal heating, where the annealing energy was absorbed through bulk heating, microwave anneal takes advantage of the responsiveness of deposited CVD metals to heating by microwaves to grow grains while purifying the deposited metal film.

[0029] The microwave energy heats the deposited metal film to a higher temperature than the bulk silicon or the underlying layers of the integrated circuit components. Therefore, the process raises the deposited metal film to a higher temperature (e.g., 500-800 degrees Celsius) than the bulk silicon or underlying layers, while leaving the underlying layers (e.g., the bulk silicon) at or below the temperature limit (e.g., 400 degrees C.) of the thermal budget. The higher temperature of the deposited metal film reduces the time needed to perform the microwave anneal operation (e.g., down to 30 second in some cases).

[0030] Referring to FIG. 1, one embodiment of the process begins with formation of an underlayer onto which metal is to be deposited (block 100 of FIG. 1). As shown in FIG. 2, the underlayer may be an insulating layer 200 on a workpiece 201 supported on a workpiece support 202 in a reactor chamber. A conductor-receiving feature such as an elongate trench 203 is formed in the insulating layer 200. The trench 203 may have a depth D of (for example) 80 nm and a width W of (for example) 20 nm.

[0031] The process of FIG. 1 continues with deposition of a metal film, e.g., a cobalt film by chemical vapor deposition (block 102 of FIG. 1). As shown in FIG. 2, the deposited metal film 204 has a thickness which is at least nearly equal to the depth D of the trench 203 and fills (or nearly fills) the trench 203. The metal film 204 in the trench 203 may serve as an interconnect conductor. Only a single CVD operation is needed to form the metal film 204. The CVD operation may be performed by immersing the workpiece 201 in a process gas including a precursor of the metal to be deposited. Hydrogen gas may be included in the process gas.

[0032] The process of FIG. 1 further continues with microwave annealing of the metal film 204 (block 104 of FIG. 1), which can reduce resistivity to about 20-30 microOhm-cm in the metal film 204. In one embodiment, the microwave power is set to a level at which the metal film 204 is heated to a temperature of over 400 degrees C., while heating the bulk of the workpiece up to but not exceeding 400 degrees C.

[0033] In the cobalt CVD process of block 102, suitable cobalt precursors for forming cobalt-containing materials {e.g., metallic cobalt or cobalt alloys) by CVD processes described herein include but are not limited to the following: cobalt carbonyl complexes, cobalt amidinates compounds, cobaltocene compounds, cobalt dienyl complexes, cobalt nitrosyl complexes, derivatives thereof, complexes thereof, plasmas thereof, or combinations thereof. The organic components of the cobalt precursor gases are impurities in the metal film and are removed by the microwave anneal operation.

[0034] In one embodiment, the process of FIG. 1 may further include heating or cooling the workpiece 201 through the workpiece support 202 (block 106 of FIG. 1) simultaneously with the microwave anneal operation of block 104.

[0035] Process conditions may be as follows: Hydrogen based gas-phase ambient with 5-100% H2 diluted by inert gas, pressure range of 100-700 Torr, microwave power in a range of 1-20 kW, at a microwave frequency of 1-20 GHz. The microwave power can be pulsed with 100-10 kHz pulse frequency with various duty cycles.

[0036] Process conditions may be limited in some cases as follows: microwave power in a range of 1-8 kW; workpiece height within elevation range of the lift servo; workpiece cooled through the workpiece support to a desired temperature (e.g., at or below 400 degrees C.); pressure in a range of 200-700 Torr; hydrogen gas flow mixed with inert gas during CVD operation and during microwave anneal in a range of 10%-100% hydrogen.

[0037] The foregoing process including microwave anneal has demonstrated equivalent CVD cobalt sheet resistance (as an indicator of film purity and grain growth) equivalent to that of conventionally treated and annealed film, but with a factor of 2-5 throughput improvement. By tuning microwave process regimes, complete gap-fill and damage-free processing can be achieved. The process of metal CVD deposition and microwave anneal can be broadly used to heal seams, voids, and increase grain sizes for lower resistivity for gap-fill in CVD metals.

[0038] The foregoing process may be altered by performing atomic layer deposition instead of chemical vapor deposition.

Advantages:

[0039] Microwave anneal is performed to replace the cyclic plasma treatments and thermal annealing required in conventional processes. This change dramatically improves the production through-put by a factor of 2-5, while providing low resistivity interconnects meeting the performance of conventionally fabricated interconnects. The microwave anneal efficiently drives out film impurities in the metal film and boosts gap fill performance. This eliminates the need for deposition of successive thin layers of metal. Instead, a single CVD or ALD process is performed in which the final thickness is deposited in a single operation.

[0040] While the foregoing is directed to embodiments of the invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.