PHOTONIC INTEGRATED TUNABLE MULTI-WAVELENGTH TRANSMITTER CIRCUIT
20170331558 · 2017-11-16
Inventors
- António Luís JESUS TEIXEIRA (Ílhavo, PT)
- Ana Cristina MAIA TAVARES (Moldes, PT)
- Ana Patricia SILVA LOPES (Viseu, PT)
- Cláudio Emanuel RODRIGUES (Aveiro, PT)
Cpc classification
H01S5/141
ELECTRICITY
H01S5/0085
ELECTRICITY
H01S3/0085
ELECTRICITY
H01S5/4062
ELECTRICITY
International classification
H01S3/00
ELECTRICITY
H01S3/13
ELECTRICITY
H01S3/08
ELECTRICITY
Abstract
The present invention provides a photonic integrated circuit, system, apparatus and method which can be used as an optical transmitter in a system, for example in a telecommunication system. According to the various embodiments of the invention, the circuit includes several optical devices, wherein some are passive and others have gain, which constructed and connected with the specific characteristics, leads to a multi-wavelength transmitter with tunable operation band.
Claims
1-37. (canceled)
38. A photonic integrated circuit comprising: A substrate; a plurality of reflectors provided in the substrate, disposed at the end of each laser cavity; a plurality of band-pass filters provided in the substrate, connected to the reflectors above mentioned, configured to operate in a certain band each of them; a plurality of band selectors provided in the substrate, each one connected to each of the above mentioned filters, which works as a enable or disable of the respective band; a power combiner provided in the substrate, which aggregates all of the above in one optical path; a multi-band filter provided in the substrate, with one input where is connected the output of the above mentioned power combiner, and a multiplicity of outputs; a multiplicity of amplifiers provided in the substrate, each one connected to one output of the above mentioned multi-band filter; a multiplicity of power splitters provided in the substrate with the input of each one connected to each amplifier, and two outputs each; a multiplicity of reflectors provided in the substrate, connected to one of the outputs of each of the above mentioned power splitter, and which mark the end of the laser cavity.
39. The photonic integrated circuit of claim 38, wherein each of the plurality of reflectors comprises a multimode interferometer reflector (MIR) or an optically reflective surface or each of the plurality of band-pass filters comprises an arrayed waveguide grating (AWG), or a Bragg grating, or a ring resonator or each band selector comprises an optical switch, or a semiconductor optical amplifier (SOA), or an erbium-doped amplifier or each multi-band filter comprises an arrayed waveguide grating (AWG) or each amplifier comprises a semiconductor optical amplifier (SOA), or an erbium-doped amplifier.
40. The photonic integrated circuit of claim 38, wherein each power combiner comprises a multi-mode interferometer (MMI) or wherein each power splitter comprises a multi-mode interferometer (MMI).
41. The photonic integrated circuit of claim 38, further comprising a multiplicity of modulators provided in the substrate, connected to the second output of the mentioned power splitter, preferably: additionally comprising a multiplexer provided in the substrate with a multiplicity of inputs, where the output of all the modulators mentioned before is connected, and with one output or wherein each modulator comprises a Mach-Zehnder modulator.
42. The photonic integrated circuit of claim 38, further comprising an electronic control unit, which monitors, through a plurality of photodetectors, the optical signal which is deliver to the modulators mentioned in claim 38, and enables or disables the band selectors also mentioned in claim 38, allowing the selection of the operation band, preferably wherein each photodetector comprises a PIN photodiode or an avalanche photodiode (APD).
43. A photonic integrated circuit comprising: a substrate; a plurality of reflectors provided in the substrate, disposed at the end of the laser cavity; a plurality of band-pass filters provided in the substrate, connected to the reflectors above mentioned, configured to operate in a certain band each of them; a plurality of band selectors provided in the substrate connected to each of the above mentioned band-pass filters, which works as a enable or disable of the respective band; a power combiner and splitter provided in the substrate, which aggregates all of the above in several optical paths; a multiplicity of amplifiers provided in the substrate, each one connected to one of the outputs of the above mentioned power combiner; a multiplicity of power splitters provided in the substrate with the input of each one connected to each amplifier, and two outputs each; a multi-band filter provided in the substrate, with a multiplicity of inputs where are connected one of the outputs of all of the above mentioned power splitters, and with one output; a reflector provided in the substrate, connected to the output of the above mentioned multi-band filter, and which mark the end of the laser cavity.
44. The photonic integrated circuit of claim 43, wherein each of the plurality of reflectors comprises a multimode interferometer reflector (MIR) or an optically reflective surface or each of the plurality of band-pass filters comprises an arrayed waveguide grating (AWG), or a Bragg grating, or a ring resonator or each of the plurality of band selectors comprises an optical switch, or a semiconductor optical amplifier (SOA), or an erbium-doped amplifier or each amplifier comprises a semiconductor optical amplifier (SOA), or an erbium-doped amplifier or each multi-band filter comprises an arrayed waveguide grating (AWG).
45. The photonic integrated circuit of claim 43, wherein each power combiner and splitter comprises a multi-mode interferometer (MMI) or wherein each power splitter comprises a multi-mode interferometer (MMI).
46. The photonic integrated circuit of claim 43, further comprising a multiplicity of modulators provided in the substrate, connected to the second output of the mentioned power splitter, preferably: additionally comprising a multiplexer provided in the substrate with a multiplicity of inputs, where the output of all the modulators mentioned before is connected, and with one output, or each modulator comprising a Mach-Zehnder modulator.
47. The photonic integrated circuit of claim 43, further comprising an electronic control unit, which monitors, through a plurality of photodetectors, the optical signal which is deliver to the modulators mentioned in claim 43, and enables or disables the band selectors also mentioned in claim 6, allowing the selection of the operation band, preferably each photodetector comprising a PIN photodiode or an avalanche photodiode (APD).
48. A photonic integrated circuit comprising: a substrate; a plurality of reflectors provided in the substrate, disposed at the end of the laser cavity; a plurality of band-pass filters provided in the substrate, each one connected to each of the above mentioned reflectors, configured to operate in a certain band each of them; a plurality of band selectors provided in the substrate, each one connected to each of the above mentioned band-pass filters; a power combiner provided in the substrate, with a plurality of inputs, and with two outputs; a multi-band filter provided in the substrate, with one input and with a multiplicity of outputs where are connected; a multiplicity of amplifiers provided in the substrate, each one connected to one of the outputs of the above mentioned multi-band filter; a multiplicity of reflectors provided in the substrate, connected to the above mentioned amplifiers, and which mark the end of the laser cavity.
49. The photonic integrated circuit of claim 48, wherein each of the plurality of reflectors comprises a multimode interferometer reflector (MIR) or an optically reflective surface or each of the plurality of band pass filters comprises an arrayed waveguide grating (AWG), or a Bragg grating, or a ring resonator or each of the plurality of band selectors comprises an optical switch, or a semiconductor optical amplifier (SOA), or an erbium-doped amplifier or each multi-band filter comprises an arrayed waveguide grating (AWG) or each amplifier comprises a semiconductor optical amplifier (SOA), or an erbium-doped amplifier.
50. The photonic integrated circuit of claim 48, wherein the power combiner comprises a multi-mode interferometer (MMI).
51. The photonic integrated circuit of claim 48, further comprising a modulator provided in the substrate, connected to the second output of the mentioned power combiner, preferably the modulator comprising a Mach-Zehnder modulator.
52. The photonic integrated circuit of claim 48, further comprising and electronic control unit, which monitors, through a plurality of photodetectors, the optical signal before entering the multi-band filter also mentioned in claim 48, and enable/disables the band selectors also mentioned in claim 48, allowing the selection of the operation band, preferably each photodetector comprising a PIN photodiode or an avalanche photodiode (APD).
Description
DESCRIPTION OF THE DRAWINGS
[0010]
[0011]
[0012]
[0013]
[0014]
DETAILED DESCRIPTION OF THE INVENTION
[0015] The following detailed description has references to the figures. Parts which are common in different figures have been refereed to using the same numbers. Also, the following detailed description does not limit the disclosure.
[0016] The present invention provides a photonic integrated system, apparatus, method and circuit which works as a multi-wavelength transmitter with tunable band. According to the embodiments of the invention, a plurality of laser sources are provided in the substrate; each of them generates a plurality of copies, and, with the enabling of a filter, it is possible to choose a specific operating band. The plurality of tunable lasers comprises a plurality of band-pass filters, which are connected to a reflector/reflective surface, on one side, and a plurality of optical switches/amplifiers, on the other side. The signal provided by the latter is aggregated in a power combiner, and then routed to a de-multiplexer, which has a single input and multiple outputs. Each output is connected to an amplifier, that is followed by a power splitter 1×2; one of its outputs is connected to a reflector/reflective surface, and the other one is the exit of the laser cavity. The generated light at the each laser cavity output can be sent to modulator. The output of each modulator is connected to an optical multiplexer, which aggregates the channels that are then transmitted to a fiber that can be coupled to the photonic integrated circuit.
[0017] Moreover, the invention allows generating and transmitting several channels, in a plurality of different bands, such as G-, XG- and TWDM-PON.
[0018]
[0019] On its side, the de-multiplexer 115 separates each wavelength λ.sub.1, λ.sub.N within the selected band, that reaches the de-multiplexer 115 input through the optical path 121, and provides each of them at the corresponding de-multiplexer 115 output, following the paths 122-1, 122-n. Due to the reflectors at the beginning of the path 120-1, 120-m, and at the end of the path 122-1, 122-n, these paths are bidirectional. A portion of the resulting light of the amplifier 116-1, 116-n driving reaches the reflector 111A-1, 111A-n, where it is reflected back to the amplifier 116, 116-n. Here it is amplified and follows the optical path 121-120 in direction to reflector 111-1, 111-m. The signal is reflected back in direction to the amplifier 116-1, 116-n, being amplified and transmitted to reflector 111A-1, 111A-n, once again. Meanwhile, the portion of the signal, which reaches the power splitter 1×2 117-1, 117-n and is not forwarded to the reflector 111A-1, 111A-n, follows the optical path 123-1, 123-n, i.e., the laser output. The constant amplifications and reflections, together with the filtering and de-multiplexing, will provide the channel λ.sub.1, λ.sub.n at the optical path 123-1, 123-n. Since the photonic integrated circuit 10 comprises one amplifier 116-1, 116-n for each channel, the power of each one can be independently adjusted. This way, the channel, which may suffer a power decrease, e.g. due to filtering imperfections, can be amplified without affecting adjacent channels.
[0020] The photonic integrated circuit 10 is only an exemplary embodiment. Any change of this fundamental circuit is also covered, such as, the introduction of additional amplifiers/other elements or the elements location rearrangement.
[0021]
[0022] One of the mentioned sub-circuits is the first photonic integrated circuit 10 with a slight difference. Besides the essential elements depicted in
[0023] The other mentioned sub-circuit, which is incorporated in photonic integrated circuit 20, relates to the modulation of the tunable laser outputs 123-1, 123-n of the photonic integrated circuit 10. The modulator 118-1, 118-n is connected to the other power splitter 1×2 117A-1, 117A-n output. The former modulates the signal according to a desired constellation.
[0024] The modulated signal follows the optical path 123A-1, 123A-n in direction to the multiplexer N×1, which multiplexes the N arriving signals into a single one that is transmitted to optical path 124, the output of the tunable transmitter. Note that, in certain cases, a polarization rotator or a similar compensation element may be needed wherever in the circuit. In spite of this is not shown in
[0025] Moreover, the photodiode 210-1, 210-n can be introduced anywhere in the photonic integrated circuit 20. Instead of being introduced at the tunable laser output, the photodiode 210-1, 210-n can be placed, e.g., between the amplifier 116-1, 116-n and the power splitter 1×2 117-1, 117-n. The photonic integrated circuit 20 embodiment represented in
[0026] The photonic integrated circuit 20 is only an exemplary embodiment. Any change of this circuit is also covered, such as, the introduction of additional amplifiers/other elements or the elements location rearrangement.
[0027]
[0028] Comparatively to the photonic integrated circuit 20, the photonic integrated circuit 30 can be decomposed into the tunable laser cavity and the modulation sub-circuit. The former is similar to the photonic integrated circuit 10, except the de-multiplexer 1×N 115 location. In photonic integrated circuit 10, the de-multiplexer 1×N 115 is located between the power combiner M×1 114 and the amplifier 116-1, 116-n, while in photonic integrated circuit 30, this element (115) is introduced between the power splitter 1×2 117-1, 117-n and the reflectors 111A-1, 111A-n. Consequently, the power combiner M×1 114 has to be replaced by a similar element 230 with N outputs, rather than a single one. Note that this element (230) is not neglected in any case, even when the number of the bands M is equal to the number of channels N. The function of both power combiner 114 and 230 is to guaranty that the signal, which travels through any selected optical path 120-1, 120-n (by enabling the corresponding, herein called, band-selector 113-1, 113-m), reaches every amplifier 116-1, 116-n.
[0029] In spite of this modification, the operation principle described for photonic integrated circuit 10 remains unchanged. The tunable laser output signals are generated, mainly, due to the constant amplifications and reflections that the light experiences in the amplifier 116-1, 116-n and in the reflectors (or reflective surfaces) 111-1, 111-m, 111A-1, 111A-n, respectively. Similarly to the photonic integrated circuit 10, in the photonic integrated circuit 30, the tuning process is dictated by the combination of the band-pass filter 112-1, 112-m that has been selected and the de-multiplexer 1×M 115.
[0030] As it can be seen in
[0031] The modulation sub-circuit of photonic integrated circuit 30 does not differ from that of the photonic integrated circuit 20. It is composed by modulators 118-1, 118-n and a multiplexer N×1 119, which multiplexes the channels λ.sub.1, λ.sub.n that travels through the optical paths 123-1 to 123-n into the multi-wavelength transmitter output 124. The modulators are connected to one of the power splitter 1×2 117-1, 117-n outputs, in case of photodiodes 210-1, 210-n are not introduced at the tunable laser cavity output. In this case, the modulators are connected to one of the power splitter 1×2 117A-1, 117A-n outputs, as it was illustrated in the case of the photonic integrated circuit 20.
[0032] Note that, in certain cases, a polarization rotator or a similar compensation element may be needed wherever in the circuit. In spite of this is not shown in
[0033] Since the photonic integrated circuit 20 comprises one amplifier 116-1, 116-n for each channel λ.sub.1, λ.sub.n, the power of each one can be independently adjusted. Also, all channels λ.sub.1, λ.sub.n can convey different information, simultaneously, because they are modulated by independent modulators 118-1, 118-n. However, it is also possible to reduce the number of modulators 118-1, 118-n if the channels can transmit the same information or if only one amplifier 116-1, 116-n is active at a time. The reduction of the number of modulators 118-1, 118-n implies the introduction of a power combiner Q×1 between the power splitter 1×2 117A-1, 117A-n and the mentioned modulator 118-1, 118-n, being Q the number of channels that can be modulated by a common modulator 118. In addition, a power splitter 1×Q has to be introduced, between the modulator 118-1, 118-n and the multiplexer N×1 119, in this case. Q value fits between 0 and N. If Q=0, all the channels should carry different information and a modulator is required for each channel, which is exactly the embodiment represented in
[0034] The photonic integrated circuit 30 is only an exemplary embodiment. Any change of this circuit is also covered, such as, the introduction of additional amplifiers/other elements or the elements location rearrangement.
[0035]
[0036] Comparatively to the photonic integrated circuit 20, the photonic integrated circuit 40 can be decomposed into the tunable laser cavity and the modulation sub-circuit. The former is similar to the photonic integrated circuit 10, except the number and location of the laser cavity outputs 123-1, 123-n. In the photonic integrated circuit 40, the laser cavity output is only one, rather than N, as in the photonic integrated circuit 10. The number was reduced due to the localization change. In photonic integrated circuit 10, the optical path 123-1, 123-n is an extension of one of the power splitter 1×2 117-1, 117-n output, while in photonic integrated circuit 40, the optical path 123 is located between the de-multiplexer 1×N 115 and the power combiner 114, which has to be replace by a similar element 240, in photonic integrated circuit 40, with the same number of inputs but with two outputs.
[0037] In spite of this modification, the operation principle described for photonic integrated circuit 10 remains unchanged. The tunable laser output signal is generated, mainly, due to the constant amplifications and reflections that the light experiences in the amplifier 116-1, 116-n and in the reflectors (or reflective surfaces) 111-1, 111-m, 111A-1, 111A-n, respectively. Similarly to the photonic integrated circuit 10, in the photonic integrated circuit 40, the tuning process is dictated by the combination of the band-pass filter 112-1, 112-m that has been selected and the de-multiplexer 1×M 115.
[0038] As it can be seen in
[0039] The modulation sub-circuit of photonic integrated circuit 40 is composed by only one modulator 118, since there is only one output laser cavity. Thus, if all the gain regions 116-1, 116-n are driven simultaneously, all channels λ.sub.1, λ.sub.n will convey the same information.
[0040] Note that, in certain cases, a polarization rotator or a similar compensation element may be needed wherever in the circuit. In spite of this is not shown in
[0041] Since the photonic integrated circuit 40 comprises one amplifier 116-1, 116-n for each channel λ.sub.1, λ.sub.n, the power of each one can be independently adjusted.
[0042] The photonic integrated circuit 40 is only an exemplary embodiment. Any change of this circuit is also covered, such as, the introduction of additional amplifiers/other elements or the elements location rearrangement.