Chemical mechanical polishing (CMP) composition comprising a protein

Abstract

Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium.

Claims

1. A chemical mechanical polishing (CMP) composition, comprising: (A) inorganic particles, organic particles, or a mixture or a composite thereof, (B) 0.05 wt % of hydrophobin or of a protein comprising at least one hydrophobin unit, and (C) an aqueous medium, wherein a pH value of the CMP composition is from 5 to 9.

2. The CMP composition according to claim 1, wherein (B) is hydrophobin.

3. The CMP composition according to claim 1, wherein the particles (A) are ceria particles.

4. The CMP composition according to claim 1, wherein the mean particle size of the particles (A) is from 50 nm to 300 nm, as determined by dynamic light scattering techniques.

5. The CMP composition according to claim 1, further comprising: (H) a sugar compound.

6. The CMP composition according to claim 5, wherein the sugar compound (H) is at least one selected from the group consisting of mono-, di-, tri-, tetra-, penta-, oligo- and polysaccharides, and oxidized monosaccharides.

7. The CMP composition according to claim 5, wherein the sugar compound (H) is at least one selected from the group consisting of glucose, galactose, saccharose, sucralose, and stereoisomers thereof.

8. A process for the manufacture of manufacturing a semiconductor device, the process comprising: chemical mechanical polishing a substrate in the presence of the CMP composition of claim 1.

9. A substrate suitable for use in the semiconductor industry prepared by the method of claim 8.

10. The substrate suitable for use in the semiconductor industry according to claim 9, wherein the substrate comprises silicon dioxide, and silicon nitride, or polysilicon.

11. The CMP composition according to claim 1 further comprising at least of (D) a corrosion inhibitor, (E) an oxidizing agent, (F) a complexing agent, and (G) a biocide.

12. The CMP composition according to claim 1, which comprises from 0.05% to 2% of (A), based on the total of the CMP composition.

13. The CMP composition according to claim 11, optionally comprising at least one of: (D) from 0.3% to 2.5%, (E) from 0.5% to 5%, (F) from 0.5% to 5%, and (G) from 0.001% to 0.05%, based on the total of the CMP composition.

14. The CMP composition according to claim 1 wherein the particles (A) are at least one selected from the group consisting of alumina, ceria, copper oxide, iron oxide, nickel oxide, manganese oxide, silica, silicon nitride, silicon carbide, tin oxide, titania, titanium carbide, tungsten oxide, yttrium oxide, zirconia, polystyrenes, polyesters, alkyl resins, polyurethanes, polylactones, polycarbonates, poylacrylates, polymethacrylates, polyethers, poly(N-alkylacrylamide)s, poly(methyl vinyl ether)s, copolymers comprising at least one of vinylaromatic compound, acrylates, methacrylates, maleic anhydride acrylamides, methacrylamides, acrylic acid, or methacrylic acid as monomeric units, and a mixture or a composite thereof.

15. The CMP composition according to claim 1, wherein the (A) particles comprise ceria particles, and the pH value is from 6 to 8.

16. The CMP composition according to claim 1, wherein the pH value is 7.0.

Description

EXAMPLES AND COMPARATIVE EXAMPLES

(1) The general procedure for the CMP experiments is described below.

(2) Standard CMP Process for 200 mm SiO.sub.2 Wafers:

(3) Strasbaugh nSpire (Model 6EC), ViPRR floating retaining ring Carrier; down pressure: 2.0 psi (138 mbar); back side pressure: 0.5 psi (34.5 mbar); retaining ring pressure: 2.5 psi (172 mbar); polishing table/carrier speed: 95/86 rpm; slurry flow rate: 200 ml/min; polishing time: 60 s; pad conditioning: in situ, 4.0 lbs (18 N); polishing pad: IC1000 A2 on Suba 4 stacked pad, xy k or k grooved (R&H); backing film: Strasbaugh, DF200 (136 holes); conditioning disk: 3M S60;

(4) The pad is conditioned by three sweeps, before a new type of slurry is used for CMP.

(5) The slurry is stirred in the local supply station.

(6) Standard analysis procedure for (semi) transparent blanket wafers:

(7) The removal is determined by optical film thickness measurement using Filmmetrics F50. 49 points diameter scans (5 mm edge exclusion) are measured pre and post CMP for each wafer. For each point on the wafer that was measured with F50 the film thickness loss is calculated from the difference of the film thickness pre and post CMP The average of the resulting data from the 49 point diameter scans gives the total removal, the standard deviation gives the (non-) uniformity.

(8) For the removal rate the quotient of the total material removal and the time of the main polishing step is used.

(9) Standard Films Used for CMP Experiments: SiO.sub.2 films: PE TEOS; Si.sub.3N.sub.4 films: PE CVD or LPCVD Poly Si films: doped;

(10) Standard Procedure for Slurry Preparation:

(11) pH is adjusted by adding of aqueous ammonia solution (0.1%) or HNO.sub.3 (0.1%) to the slurry. The pH value is measured with a pH combination electrode (Schott, blue line 22 pH).

(12) Inorganic Particles (A) Used in the Examples

(13) Colloidal ceria particles (Rhodia HC60) having a mean primary particle size of 60 nm (as determined using BET surface area measurements) and having a mean secondary particle size (d50 value) of 99 nm (as determined using dynamic light scattering techniques via a Horiba instrument) were used.

(14) Hydrophobin was provided by BASF SE.

(15) TABLE-US-00001 TABLE 1 CMP compositions of example 1 and of the comparative example V1, their pH values as well as their MRR (material removal rate) and selectivity data in the CMP process using these compositions, wherein the aqueous medium (C) is de-ionized water (wt. % = percent by weight; PolySi = polysilicon) MRR TEOS- MRR SiO.sub.2 TEOS- MRR MRR MRR blanket; SiO.sub.2 PECVD LPCVD PolySi MRR blanket; Si.sub.3N.sub.4; Si.sub.3N.sub.4; doped; per MRR MRR MRR MRR Formulation of the pH weight per F50 per F50 per F50 per F50 Example composition [ ] [Å/min] [Å/min] [Å/min] [Å/min] [Å/min] Comparative 0.5 wt. % 5.5 5529 5259 257 494 367 Example V1 colloidal ceria particles (Rhodia HC60) Example 1 0.5 wt. % 7 4088 3489 21 27 38 colloidal ceria particles (Rhodia HC60) + 0.05 wt. % Hydrophobin

(16) These examples of the CMP compositions of the invention improve the polishing performance.