The present invention relates to accessories. Specifically, the present invention relates to cleaning accessories such as jewelry that have small crevices, impressions, engravings, or other fine details that are difficult to reach and clean. Even more specifically, the present invention relates to polishing and drying the cleaned accessories by using an allotment of polishing compound and/or steam.

The present invention relates to accessories. Specifically, the present invention relates to cleaning accessories such as jewelry that have small crevices, impressions, engravings, or other fine details that are difficult to reach and clean. Even more specifically, the present invention relates to polishing and drying the cleaned accessories by using an allotment of polishing compound and/or steam.

A method for polishing a semiconductor substrate includes the following operations. A semiconductor substrate is received. An abrasive slurry having a first temperature is dispensed to a polishing surface of a polishing pad. The semiconductor substrate is polished. The abrasive slurry have a second temperature is dispensed to the polishing surface of the polishing pad during the polishing of the semiconductor substrate. The second temperature is different from the first temperature.

A method for polishing a semiconductor substrate includes the following operations. A semiconductor substrate is received. An abrasive slurry having a first temperature is dispensed to a polishing surface of a polishing pad. The semiconductor substrate is polished. The abrasive slurry have a second temperature is dispensed to the polishing surface of the polishing pad during the polishing of the semiconductor substrate. The second temperature is different from the first temperature.

A large-size synthetic quartz glass substrate has a diagonal length of at least 1,000 mm. Provided that an effective range is defined on the substrate surface, and the effective range is partitioned into a plurality of evaluation regions such that the evaluation regions partly overlap each other, a flatness in each evaluation region is up to 3 μm. From the quartz glass substrate having a high flatness and a minimal local gradient within the substrate surface, a large-size photomask is prepared.

A large-size synthetic quartz glass substrate has a diagonal length of at least 1,000 mm. Provided that an effective range is defined on the substrate surface, and the effective range is partitioned into a plurality of evaluation regions such that the evaluation regions partly overlap each other, a flatness in each evaluation region is up to 3 μm. From the quartz glass substrate having a high flatness and a minimal local gradient within the substrate surface, a large-size photomask is prepared.

A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.

A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.

An end effector for a robotic sanding system includes a sanding head including a sander configured to sand a surface of a workpiece. A motor is operatively coupled to the sander. The motor is configured to rotate the sander to sand the surface of the workpiece. The motor includes a first central longitudinal axis. A coupler is configured to removably secure the end effector to an attachment interface of an arm of the robotic sanding system. The coupler includes a second central longitudinal axis. The first central longitudinal axis is offset from the second central longitudinal axis. One or more sensors are coupled to the sanding head. The one or more sensors are configured to detect presence of a metal within the predefined range.

A workpiece has a device area and a peripheral area surrounding the device area on a front surface side thereof. A workpiece grinding method includes a groove forming step of performing grinding feed of a grinding unit while a spindle is rotated, and grinding a predetermined area on a back surface side of the workpiece, the predetermined area corresponding to the device area, in a state in which a chuck table holding the workpiece is not rotated, thereby forming a groove on the back surface side, a groove removing step of starting rotation of the chuck table while the spindle is kept rotating, thereby grinding side walls of the groove and removing the groove, and a recess forming step of performing grinding feed of the grinding unit while the spindle and the chuck table are rotated, thereby grinding the predetermined area and forming a recess and a ring-shaped reinforcement part.