Disclosed in the present application are a camera module, and a photosensitive assembly and a manufacturing method therefor. The photosensitive assembly comprises a circuit board, a photosensitive chip electrically connected to the circuit board, and a shaping member provided on the circuit board. A lower surface of the photosensitive chip is attached to the shaping member to form an accommodating space with the shaping member and the circuit board. The accommodating space is configured so that the photosensitive chip is bent downward during a process of assembling the photosensitive assembly. In this way, the photosensitive chip is bent into a shape adapted to the actual focal plane during the assembly process, so as to improve the imaging quality.

An image sensor includes different first and second focus pixels in a substrate; a first adjacent pixel in the substrate and adjacent to the first focus pixel in a positive first direction, a pixel being absent between the first focus pixel and the first adjacent pixel; a first micro-lens covering the first adjacent pixel; a second adjacent pixel in the substrate and adjacent to the second focus pixel in a positive first direction, a pixel being absent between the second focus pixel and the second adjacent pixel; and a second micro-lens covering the second adjacent pixel, and an area of the first micro-lens being different from an area of the second micro-lens.

A fingerprint sensor includes: a light sensing layer including a light sensing element; and an optical layer including a plurality of light transmitting areas, a light blocking area, a light transmitting member disposed in the plurality of light transmitting areas, a light blocking member disposed in the light blocking area, and a planarization member disposed on the light blocking member, wherein the light blocking area surrounds the plurality of light transmitting areas, wherein the light transmitting member includes a first organic material, wherein the light blocking member includes a second organic material, and wherein the planarization member includes a third organic material and a positive-type photosensitive material.

A semiconductor package is disclosed. The package includes a package substrate having top and bottom major package substrate surfaces, the top major package surface including a die region. A die having first and second major die surfaces is attached onto the die region. The second major die surface is attached to the die region. The first major die surface includes a sensor region and a cover adhesive region surrounding the sensor region. The package also includes applying a cover adhesive to the cover adhesive region on the first major die surface. A protective cover with first and second major cover surfaces and side surfaces is attached to the die using the cover adhesive. The second major cover surface contacts the cover adhesive. The protective cover covers the sensor region. The protective cover includes a recessed structure on the second major cover surface. The recessed structure is located above die bond pads on the die to create an elevated space over peak portions of wire bonds on the die bond pads. An encapsulant is disposed on the package substrate to cover exposed portions of the package substrate, die and bond wires and side surfaces of the protective cover, while leaving the first major cover surface exposed.

An image sensor includes a first substrate including a focus pixel region and pixel regions around the focus pixel region, each of the focus pixel region and the pixel regions including at least one photoelectric conversion region, color filters provided on the focus pixel region and the pixel regions, respectively, and on a first surface of the first substrate, and micro lenses provided on the color filters, respectively. The micro lenses include an auto-focus lens on the focus pixel region, a first micro lens adjacent to the auto-focus lens, and a standard micro lens spaced apart from the auto-focus lens.

The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a semiconductor substrate having sidewalls that form one or more trenches. The one or more trenches are disposed along opposing sides of a photodiode and vertically extend from an upper surface of the semiconductor substrate to within the semiconductor substrate. A doped region is arranged along the upper surface of the semiconductor substrate and along opposing sides of the photodiode. A first dielectric lines the sidewalls of the semiconductor substrate and the upper surface of the semiconductor substrate. A second dielectric lines sidewalls and an upper surface of the first dielectric. The doped region has a width laterally between a side of the photodiode and a side of the first dielectric. The width of the doped region varies at different heights along the side of the photodiode.

A photodetector device includes a photodetector array comprising an array of photodetectors and a plurality of metal structures arranged between photodetectors of the array of photodetectors, wherein the plurality of metal structures are arranged in a first pattern; and a transparent substrate comprising a plurality of diffusion structures being patterned according to a second pattern that matches the first pattern. Each diffusion structure of the plurality of diffusion structures is configured to redirect light that is incident thereon. Additionally, the transparent substrate and the photodetector array are coupled together such that the first pattern is aligned with the second pattern and the plurality of diffusion structures covers the plurality of metal structures.

The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensor die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer.

An imaging device according to an embodiment of the present disclosure includes a photoelectric conversion section provided in a semiconductor substrate, a charge holding section that is provided as being laminated over the photoelectric conversion section in a thickness direction of the semiconductor substrate and holds a charge photoelectrically converted by the photoelectric conversion section, a horizontal light shielding film that is provided between the photoelectric conversion section and the charge holding section and extends in an in-plane direction of the semiconductor substrate, and a plurality of vertical gate electrodes that passes through an identical opening provided in the horizontal light shielding film and extends to the photoelectric conversion section in the thickness direction of the semiconductor substrate.

An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.