By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included.

A device includes a substrate layer, a diamond layer, and a device layer. The device layer is patterned. The diamond layer is to conform to a pattern associated with the device layer.

A thin film transistor, an array substrate and manufacturing method thereof, and a display device are provided. The thin film transistor includes an active layer, a source electrode, a drain electrode, and a first gate electrode, the first gate electrode is shaped in a ring. The active layer includes a first portion, a second portion and a third portion for connecting the first portion and the second portion. The first portion and the second portion are disposed horizontally, and connected to the source electrode and the drain electrode, respectively. The third portion is disposed obliquely, and has a channel provided thereon. At least one part of the channel is located on an inner side of the first gate electrode. The thin film transistor can be used in a display device.

A method of manufacturing an SOI wafer, including (a) forming a thermal oxide film on an SOI layer of an SOI wafer by a heat treatment under an oxidizing gas atmosphere, (b) measuring thickness of the SOI layer after forming the thermal oxide film, (c) performing a batch cleaning, wherein an etching amount of SOI layer is adjusted depending on thickness of the SOI layer measured in step (b) such that thickness of the SOI layer is adjusted to be thicker than a target value after etching, (d) measuring thickness of the SOI layer after batch cleaning, (e) performing a single-wafer cleaning, wherein an etching amount of the SOI layer is adjusted depending on thickness of the SOI layer measured in step (d) such that thickness of the SOI layer is adjusted to be the target value after etching, and removing the thermal oxide film formed in step (a) before or after step (b).

The present invention provides a flexible substrate for packaging and a package. The flexible substrate for packaging includes a bendable region provided in a central region of the flexible substrate; chips provided at both sides of the bendable region and at both ends of the flexible substrate, respectively; and a wire provided to be connected between the chips and to pass through the bendable region. A portion of the wire corresponding to the bendable region is provided with an anti-stress structure, and the anti-stress structure is configured to release a tensile resistance and a compressive resistance when the bendable region is bent.

The present application provides an array substrate and a method for manufacturing the same, and a display device including the array substrate, the array substrate includes a substrate, and a gate drive circuit and a common electrode line arranged above the substrate, the gate drive circuit and the common electrode line are arranged adjacent to each other, and at least one groove is provided in the common electrode line. In the application, by forming the groove in the common electrode line, flow of the developing solution from the common electrode line to the gate drive circuit can be effectively suppressed, so as to solve the problem that the channel is broken in the thin film transistor of the gate drive circuit due to nonuniform distribution of the developing solution.

An array substrate is provided. The array substrate includes: a substrate; a LTPS TFT disposed above the substrate; a planarization layer covering the LTPS TFT; a via hole formed in the planarization layer, wherein the via hole reveals a drain electrode of the LTPS TFT; multiple common electrodes and receiving electrodes disposed separately on the planarization layer, wherein the multiple common electrode function as a driving electrode in a touch stage, and the multiple common electrodes which are disposed separately are connected with each other; a passivation layer which covers the multiple common electrodes and the multiple receiving electrodes and the planarization layer; and a pixel electrode disposed on the passivation layer, wherein, the pixel electrode is contacted with the drain electrode through the via hole. A manufacturing method for the array substrate is also provided. The present invention can reduce one manufacturing process and decrease production cost.

The present invention provides an array substrate and a manufacturing method thereof, a display panel and a display device, belongs to a field of black-matrix-less display technology, and can solve problems that a conductive reflecting structure in a display panel of prior art affects display effect and external visibility. The array substrate of the present invention comprises a conductive reflecting structure and metal particles provided above the conductive reflecting structure.

The present invention provides a manufacturing method and a structure of an oxide semiconductor TFT substrate, in which an oxide conductor layer is used to define a channel of an oxide semiconductor TFT substrate. Since the oxide conductor layer is relatively thin and compared to the known techniques, the width of the channel can be made smaller and the width of the channel can be controlled precisely, the difficult of the manufacturing process of the oxide semiconductor TFT substrate can be reduced and the performance of the oxide semiconductor TFT substrate can be enhanced and the yield rate of manufacture can be increased. In a structure of an oxide semiconductor TFT substrate manufactured with the present invention, since the oxide conductor layer and the oxide semiconductor layer are similar in structural composition, excellent ohmic contact can be formed; the oxide conductor does not cause metal ion contamination in the oxide semiconductor layer; and the oxide conductor layer is transparent so as to help increase aperture ratio.

A pixel structure, an array substrate and a display device. The pixel substrate comprises a first pixel electrode and a second pixel electrode arranged in a first direction, and a thin film transistor (TFT) disposed between the first pixel electrode and the second pixel electrode. The TFT includes a comb-shaped source, a comb-shaped first drain and a comb-shaped second drain; and a channel region of the TFT is defined by the comb-shaped source respectively and the comb-shaped first drain and the comb-shaped second drain. The channel region has a greater ratio of width to length, thus improving the driving capability of the TFT for driving the first pixel electrode and the second pixel electrode.