Manufacturing method and structure of oxide semiconductor TFT substrate

Abstract

The present invention provides a manufacturing method and a structure of an oxide semiconductor TFT substrate, in which an oxide conductor layer is used to define a channel of an oxide semiconductor TFT substrate. Since the oxide conductor layer is relatively thin and compared to the known techniques, the width of the channel can be made smaller and the width of the channel can be controlled precisely, the difficult of the manufacturing process of the oxide semiconductor TFT substrate can be reduced and the performance of the oxide semiconductor TFT substrate can be enhanced and the yield rate of manufacture can be increased. In a structure of an oxide semiconductor TFT substrate manufactured with the present invention, since the oxide conductor layer and the oxide semiconductor layer are similar in structural composition, excellent ohmic contact can be formed; the oxide conductor does not cause metal ion contamination in the oxide semiconductor layer; and the oxide conductor layer is transparent so as to help increase aperture ratio.

Claims

1. A manufacturing method of an oxide semiconductor thin-film transistor (TFT) substrate, comprising the following steps: Step 1: providing a substrate and depositing and patternizing an oxide conductor layer on the substrate to form an oxide conductor layer having a channel; Step 2: depositing and patternizing an oxide semiconductor layer on the oxide conductor layer to form an oxide semiconductor layer; Step 3: depositing a first insulation layer on the oxide semiconductor layer; Step 4: depositing and patternizing a first metal layer on the first insulation layer to form a gate terminal; Step 5: depositing a second insulation layer on the gate terminal; Step 6: subjecting the first insulation layer and the second insulation layer simultaneously to a patternization operation to form vias; and Step 7: forming a source terminal and a drain terminal on the second insulation layer.

2. The manufacturing method of an oxide semiconductor TFT substrate as claimed in claim 1, wherein an operation of Step 7 comprises: depositing and patternizing a second metal layer on the second insulation layer, where the second metal layer fills up the vias and is electrically connected to the oxide semiconductor layer to form the drain terminal and the source terminal.

3. The manufacturing method of an oxide semiconductor TFT substrate as claimed in claim 1, wherein an operation of Step 7 comprises: Step 71: depositing and patternizing a second metal layer on the second insulation layer, where the second metal layer fills up the via and is electrically connected to the oxide semiconductor layer to form the drain terminal; and Step 72: depositing and patternizing a second oxide conductor layer on the second insulation layer, where the second oxide conductor layer fills up the via and is electrically connected to the oxide semiconductor layer to form the source terminal.

4. The manufacturing method of an oxide semiconductor TFT substrate as claimed in claim 1, wherein the substrate is a glass substrate and the patternizing operation is achieved with yellow light and etching processes.

5. The manufacturing method of an oxide semiconductor TFT substrate as claimed in claim 1, wherein the oxide conductor layer is indium tin oxide (ITO) or indium zinc oxide (IZO) and the oxide conductor layer has a thickness less than a thickness of the drain terminal.

6. The manufacturing method of an oxide semiconductor TFT substrate as claimed in claim 3, wherein the source terminal is ITO or IZO.

7. The manufacturing method of an oxide semiconductor TFT substrate as claimed in claim 1, wherein the source terminal also functions as a pixel electrode and the oxide semiconductor layer is indium gallium zinc oxide (IGZO).

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The technical solution, as well as other beneficial advantages, of the present invention will be apparent from the following detailed description of embodiments of the present invention, with reference to the attached drawing. In the drawing:

(2) FIG. 1 is a cross-sectional view showing a structure of a conventional oxide semiconductor thin-film transistor (TFT) substrate;

(3) FIG. 2 is a cross-sectional view showing a structure of another conventional oxide semiconductor TFT substrate;

(4) FIG. 3 is a cross-sectional view showing a structure of a further conventional oxide semiconductor TFT substrate;

(5) FIG. 4 is a flow chart illustrating a manufacturing method of an oxide semiconductor TFT substrate according to the present invention;

(6) FIG. 5 is a cross-sectional view showing a structure of an oxide semiconductor TFT substrate according to a first embodiment of the present invention; and

(7) FIG. 6 is a cross-sectional view showing a structure of an oxide semiconductor TFT substrate according to a second embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

(8) To further expound the technical solution adopted in the present invention and the advantages thereof, a detailed description is given to a preferred embodiment of the present invention and the attached drawings.

(9) Referring to FIGS. 4 and 5, a manufacturing method of an oxide semiconductor TFT substrate according to a first embodiment of the present invention comprises the following steps:

(10) Step 1: providing a substrate 1 and depositing and patternizing an oxide conductor layer on the substrate 1 to form an oxide conductor layer 5 having a channel 51.

(11) Preferably, the substrate 1 is a glass substrate.

(12) The oxide conductor layer 5 is ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). Preferably, the oxide conductor layer 5 is ITO.

(13) Step 2: depositing and patternizing an oxide semiconductor layer on the oxide conductor layer 5 to form an oxide semiconductor layer 6.

(14) Preferably, the oxide semiconductor layer 6 is IGZO (Indium Gallium Zinc Oxide). The oxide semiconductor layer 6 fills up the channel 51.

(15) Step 3: depositing a first insulation layer 3 on the oxide semiconductor layer 6.

(16) Step 4: depositing and patternizing a first metal layer on the first insulation layer 3 to form a gate terminal 2.

(17) Step 5: depositing a second insulation layer 31 on the gate terminal 2.

(18) The second insulation layer 31 completely covers the first insulation layer 3.

(19) Step 6: subjecting the first insulation layer 3 and the second insulation layer 31 simultaneously to a patternization operation to form vias 32, 33.

(20) Step 7: depositing and patternizing a second metal layer on the second insulation layer 31, where the second metal layer fills up the vias 32, 33 and is electrically connected to the oxide semiconductor layer 6 to form a drain terminal 4 and a source terminal 52.

(21) The oxide conductor layer 5 has a thickness less than a thickness of the drain terminal 4. The patternizing operation is achieved with yellow light and etching processes.

(22) As shown in FIG. 5, based on the manufacturing method of the first embodiment described above, the present invention also provides a structure of an oxide semiconductor TFT substrate, which comprises: a substrate 1, an oxide conductor layer 5 formed on the substrate 1, an oxide semiconductor layer 6 formed on the oxide conductor 5, a first insulation layer 3 and a second insulation layer 31 sequentially formed on the substrate 1 and the oxide semiconductor layer 6, a gate terminal 2 between the first insulation layer 3 and the second insulation layer 31, and a drain terminal 4 and a source terminal 52 formed on the second insulation layer 31 and electrically connected to the oxide semiconductor layer 6 through vias 32, 33.

(23) The oxide conductor layer 5 comprises a channel 51 formed therein and the oxide conductor layer 5 has a thickness less than a thickness of the drain terminal 4. The oxide conductor layer 5 is ITO or IZO. Preferably, the oxide conductor layer 5 is ITO.

(24) The substrate 1 is a glass substrate. The drain terminal 4 and the source terminal 52 are both metal. The oxide semiconductor layer 6 is IGZO.

(25) Referring to FIGS. 4 and 6, a manufacturing method of an oxide semiconductor TFT substrate according to a second embodiment of the present invention comprises the following steps:

(26) Step 1: providing a substrate 1 and depositing and patternizing a first oxide conductor layer on the substrate 1 to form an oxide conductor layer 5 having a channel 51.

(27) Preferably, the substrate 1 is a glass substrate.

(28) The oxide conductor layer 5 is ITO or IZO. Preferably, the oxide conductor layer 5 is ITO.

(29) Step 2: depositing and patternizing an oxide semiconductor layer on the oxide conductor layer 5 to form an oxide semiconductor layer 6.

(30) Preferably, the oxide semiconductor layer 6 is IGZO. The oxide semiconductor layer 6 fills up the channel 51.

(31) Step 3: depositing a first insulation layer 3 on the oxide semiconductor layer 6.

(32) Step 4: depositing and patternizing a first metal layer on the first insulation layer 3 to form a gate terminal 2.

(33) Step 5: depositing a second insulation layer 31 on the gate terminal 2.

(34) The second insulation layer 31 completely covers the first insulation layer 3.

(35) Step 6: subjecting the first insulation layer 3 and the second insulation layer 31 simultaneously to a patternization operation to form vias 32, 33.

(36) Step 7: depositing and patternizing a second metal layer on the second insulation layer 31, where the second metal layer fills up the via 32 and is electrically connected to the oxide semiconductor layer 6 to form a drain terminal 4.

(37) Step 8: depositing and patternizing a second oxide conductor layer on the second insulation layer 31, where the second oxide conductor layer fills up the via 33 and is electrically connected to the oxide semiconductor layer 6 to form a source terminal 52.

(38) The oxide conductor layer 5 has a thickness less than a thickness of the drain terminal 4. The patternizing operation is achieved with yellow light and etching processes.

(39) As shown in FIG. 6, based on the manufacturing method of the second embodiment described above, the present invention also provides a structure of an oxide semiconductor TFT substrate, which comprises: a substrate 1, an oxide conductor layer 5 formed on the substrate 1, an oxide semiconductor layer 6 formed on the oxide conductor 5, a first insulation layer 3 and a second insulation layer 31 sequentially formed on the substrate 1 and the oxide semiconductor layer 6, a gate terminal 2 between the first insulation layer 3 and the second insulation layer 31, a drain terminal 4 formed on the second insulation layer 31 and electrically connected to the oxide semiconductor layer 6 through a via 32, and a source terminal 52 formed on the second insulation layer 31 and electrically connected to the oxide semiconductor layer 6 through a via 33.

(40) The oxide conductor layer 5 comprises a channel 51 formed therein. The oxide conductor layer 5 and the source terminal 52 are both oxide conductor. The oxide conductor is ITO or IZO and preferably, the oxide conductor is ITO. The oxide conductor layer 5 has a thickness less than a thickness of the drain terminal 4.

(41) The substrate 1 is a glass substrate. The drain terminal 4 is metal. The oxide semiconductor layer 6 is IGZO.

(42) It is noted here that the oxide semiconductor layer used in the manufacturing method of an oxide semiconductor TFT substrate according to the present invention can be replaced with other semiconductors, such as a-Si (Amorphous Silicon), poly-Si (Poly-silicon) semiconductor, and organic semiconductors. Further, the structure of the oxide semiconductor TFT substrate according to the present invention is applicable to LCDs, OLEDs, and EPDs and is also applicable to the field of active display devices, such as non-flexible or flexible display devices. Further, display devices of large, medium, and small sizes can all use the structure of the oxide semiconductor TFT substrate according to the present invention.

(43) In summary, the present invention provides a manufacturing method and a structure of an oxide semiconductor TFT substrate, in which an oxide conductor layer is used to define a channel of an oxide semiconductor TFT substrate. Since the oxide conductor layer is relatively thin and compared to the known techniques, the width of the channel can be made smaller and the width of the channel can be controlled precisely, the difficult of the manufacturing process of the oxide semiconductor TFT substrate can be reduced and the performance of the oxide semiconductor TFT substrate can be enhanced and the yield rate of manufacture can be increased. In a structure of an oxide semiconductor TFT substrate manufactured with the present invention, since the oxide conductor layer and the oxide semiconductor layer are similar in structural composition, excellent ohmic contact can be formed; the oxide conductor does not cause metal ion contamination in the oxide semiconductor layer; and the oxide conductor layer is transparent so as to help increase aperture ratio.

(44) Based on the description given above, those having ordinary skills of the art may easily contemplate various changes and modifications of the technical solution and technical ideas of the present invention and all these changes and modifications are considered within the protection scope of right for the present invention.