A method for manufacturing a quantum electronic circuit includes etching a semiconducting layer so as to obtain: a plurality of pillars; and a qubit layer; oxidising the flank of each pillar; forming coupling rows and coupling columns; and depositing separation layers leaving a contact surface protrude from each pillar.

A semiconductor device includes a first and a second switching element, a first and a second conductive member, and a capacitor. The first switching element has a first element obverse surface and a first element reverse surface facing away from each other in a first direction. The second switching element has a second element obverse surface and a second element reverse surface facing away from each other in the first direction. The first and second conductive members are spaced apart in a second direction orthogonal to the first direction. The capacitor has a first and a second connection terminal. The first and second switching elements are connected in series, forming a bridge. The first and second connection terminals are electrically connected to opposite ends of the bridge. The capacitor and the first switching element are on the first conductive member, the second switching element on the second conductive member.

To suppress a leakage current caused by a gate of a tunnel field effect transistor included in a silicon spin quantum bit device, the silicon spin quantum bit device is provided including a tunnel field effect transistor having a gate, a source, and a drain, a quantum gate operation mechanism for spin control, which is provided under the tunnel field effect transistor, and an inter-qubit coupler for coupling a channel of the tunnel field effect transistor with a channel of a tunnel field effect transistor included in another quantum bit device. Further, the gate is made wider in width than the channel and is partly formed on the inter-qubit coupler.

A device for shielding at least one component from thermal radiation, the device comprising at least a first substrate with a first surface and a second surface and a second substrate with a first surface and second surface, the first surface of the second substrate being arranged to at least partially face the second surface of the first substrate. The device additionally comprises at least a first component arranged on the first surface of the second substrate or the second surface of the first substrate and a shielding arrangement comprising a plurality of shielding elements-comprising electrically conductive material, the shielding elements being configured to essentially surround at least the first component to provide a shielded area within which the first component is located, wherein electromagnetic radiation having wavelength longer than a selected first wavelength is essentially prevented from reaching the shielded area.

Engineered quantum processing elements are disclosed. The engineered quantum processing element includes a dopant dot embedded in a semiconductor substrate. A dielectric material forms an interface with the semiconductor substrate. The dopant dot includes a plurality of dopant atoms and one or more electrons/holes confined within the dopant dot. The geometrical configuration of the plurality of dopant atoms with respect to the semiconductor substrate is engineered to achieve optimal linear hyperfine Stark coefficients. Further, aspects of the present disclosure are directed to methods of fabricating such engineered quantum processing elements.

An electronic device includes a pair of depletion gates, an accumulation gate, and a conductive resonator. The depletion gates are spaced apart from each other. The accumulation gate is over the depletion gates. The conductive resonator is over the depletion gates and the accumulation gate. The conductive resonator includes a first portion, a second portion, and a third portion. The first portion and the second portion are on opposite sides of the accumulation gate. The third portion interconnects the first and second portions of the conductive resonator and across the depletion gates. A bottom surface of the first portion of the conductive resonator is lower than a bottom surface of the accumulation gate.

A novel and useful system and method of quantum stochastic rounding using silicon based quantum dot arrays. Unitary noise is derived from a probability of detecting a particle within a quantum dot comprising position based charge qubits with two time independent basis states |0> and |1>. A two level electron tunneling device generates quantum noise and includes a reservoir of particles, a quantum dot, and a barrier used to control tunneling between the reservoir and the quantum dot. A detector outputs a digital stream corresponding to the probability of a particle being detected. Controlling the bias applied to the barrier controls the probability of detection. The probability density function (PDF) of the output unitary noise is controlled to correspond to a desired probability. Unitary noise is used to perform stochastic rounding by controlling the bias applied to the barrier according to a remainder of numbers to be rounded.

The invention provides a spin qubit-type semiconductor device capable of achieving both high-speed spin manipulation and high integration, and an integrated circuit for the spin qubit-type semiconductor device. The spin qubit-type semiconductor device includes a body comprised of at least one of a semiconductor layer itself formed with a quantum dot and a structural portion arranged around the semiconductor layer, a gate electrode arranged at a position on the semiconductor layer, which faces the quantum dot, at least one micro magnet wholly or partly embedded in the body so that a first position condition in which the micro magnet is at a position near the quantum dot, a second position condition in which the position of a lower end of the micro magnet is located below the gate electrode, and a third position condition in which when viewed from above the body, the micro magnet is arranged at a position having no rotational symmetry with the quantum dot as the center of rotation are satisfied, and a static magnetic field applying unit capable of applying a static magnetic field to the quantum dot and the micro magnet.

An electronic component includes a semiconductor substrate having a first major surface and a second major surface opposing the first major surface. The electronic component further includes an electronic circuit integrated into the semiconductor substrate and a mirror arranged over the semiconductor substrate, at least a portion of the mirror being inclined with respect to the first major surface of the semiconductor substrate. The electronic component further includes at least one electrical contact configured to provide an electrical coupling between the electronic circuit and at least one electrode of an ion trap.

A structure for cooling a component of a quantum device by circulating a given current between a first contact element with the component and a second contact element with the component, the first contact element comprising at least one given superconducting metal material, in particular at a given temperature less than 2K, and being in contact by a first end with a first semiconductor portion of said component so as to form with the first semiconductor portion at least one cooling tunnel junction.